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PD - 94008A

IRFP250N
HEXFET® Power MOSFET
l Advanced Process Technology D
l Dynamic dv/dt Rating VDSS = 200V
l 175°C Operating Temperature
l Fast Switching RDS(on) = 0.075Ω
l Fully Avalanche Rated G
l Ease of Paralleling ID = 30A
l Simple Drive Requirements S

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where


higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC

Absolute Maximum Ratings


Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, V GS @ 10V 30
ID @ TC = 100°C Continuous Drain Current, V GS @ 10V 21 A
IDM Pulsed Drain Current  120
PD @TC = 25°C Power Dissipation 214 W
Linear Derating Factor 1.4 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 315 mJ
IAR Avalanche Current 30 A
EAR Repetitive Avalanche Energy 21 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 8.6 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.7
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40
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10/7/04
IRFP250N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, I D = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.075 Ω VGS = 10V, ID = 18A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 17 ––– ––– S VDS = 50V, ID = 18A „
––– ––– 25 VDS = 200V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 123 ID = 18A
Qgs Gate-to-Source Charge ––– ––– 21 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 57 VGS = 10V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 14 ––– VDD = 100V
tr Rise Time ––– 43 ––– ID = 18A
ns
td(off) Turn-Off Delay Time ––– 41 ––– RG = 3.9Ω
tf Fall Time ––– 33 ––– RD = 5.5Ω, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 2159 ––– VGS = 0V


Coss Output Capacitance ––– 315 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 83 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics


Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 30
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 120


(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, I S = 18A, VGS = 0V „
trr Reverse Recovery Time ––– 186 279 ns TJ = 25°C, I F = 18A
Qrr Reverse Recovery Charge ––– 1.3 2.0 µC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ ISD ≤ 18A, di/dt ≤ 374A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. (See Fig. 11) TJ ≤ 175°C
‚ Starting TJ = 25°C, L = 1.9mH „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 18A. (See Figure 12)

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IRFP250N
1000 1000 VGS
VGS
TOP 15V TOP 15V
10V 10V

I D , Drain-to-Source Current (A)


I D , Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
100 5.5V 5.5V
5.0V 100 5.0V
BOTTOM 4.5V BOTTOM 4.5V

10

10
4.5V
1 4.5V

1
0.1

20µs PULSE WIDTH 20µs PULSE WIDTH


TJ = 25 °C TJ = 175 °C
0.01 0.1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.5
RDS(on) , Drain-to-Source On Resistance

ID = 30A
I D , Drain-to-Source Current (A)

3.0

100
2.5
TJ = 175° C
(Normalized)

2.0
10
1.5
TJ = 25 ° C
1.0
1

0.5
V DS = 50V
20µs PULSE WIDTH VGS = 10V
0.1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance


Vs. Temperature

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IRFP250N
5000 16
VGS = 0V, f = 1 MHZ ID = 18A
V DS= 160V
Ciss = Cgs + Cgd, Cds SHORTED

VGS , Gate-to-Source Voltage (V)


V DS= 100V
Crss = Cgd V DS= 40V
4000
Coss = Cds + Cgd
12
C, Capacitance(pF)

3000
Ciss
8

2000
Coss

4
1000
Crss

0 0
0 20 40 60 80 100
1 10 100 1000
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.


Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

ID , Drain Current (A)

100

TJ = 175 ° C 100
10us

10

100us
TJ = 25 ° C 10
1
1ms
TC = 25 °C
TJ = 175 °C 10ms
V GS = 0 V Single Pulse
0.1 1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area


Forward Voltage

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IRFP250N
RD
35 VDS
35
VGS
30 D.U.T.
30 RG
+
V
ID , Drain Current (A)

- DD
ID , Drain Current (A)

25
25
10V
20 Pulse Width ≤ 1 µs
20 Duty Factor ≤ 0.1 %

15
15 Fig 10a. Switching Time Test Circuit
10
10 VDS
90%
5
5

0
0 25 50 75 100 125 150 175
25 50 T 75
, Case100 125
Temperature (150
° C) 175 10%
TC C
, Case Temperature ( ° C) VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
1
Thermal Response(Z thJC )

D = 0.50

0.20

0.1
0.10
PDM
0.05
t1
0.02 SINGLE PULSE
(THERMAL RESPONSE) t2
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP250N

EAS , Single Pulse Avalanche Energy (mJ)


800
15V
ID
TOP 7.3A
13A
BOTTOM 18A
L DRIVER 600
VDS

RG D.U.T +
- VDD 400
IAS A
20V
tp 0.01Ω

Fig 12a. Unclamped Inductive Test Circuit 200

V(BR)DSS
tp 0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( ° C)

Fig 12c. Maximum Avalanche Energy


Vs. Drain Current

I AS

Fig 12b. Unclamped Inductive Waveforms


Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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IRFP250N
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations


D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive


P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS


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IRFP250N
TO-247AC Package Outline Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information


EXAMPLE: T HIS IS AN IRFPE30
WITH AS SEMBLY PART NUMBER
LOT CODE 5657 INTERNATIONAL
AS S EMBLED ON WW 35, 2000 RECTIFIER IRFPE30

IN THE AS SEMBLY LINE "H" LOGO 035H


56 57
Note: "P" in assembly line DATE CODE
position indicates "Lead-Free" AS S EMBLY YEAR 0 = 2000
LOT CODE WEEK 35
LINE H

Data and specifications subject to change without notice.


This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
8 www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/

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