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Semiconductor Diodes
© Modified by Yuttapong Jiraraksopakun
ENE, KMUTT 2009
Semiconductors, Insulators, Conductors
Electronic Devices and Circuit Theory, 10/e 2 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Semiconductor Materials
Materials commonly used in the development of
semiconductor devices:
• Silicon (Si)
• Germanium (Ge)
• Gallium Arsenide (GaAs)
Electronic Devices and Circuit Theory, 10/e 3 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Conduction in Semiconductors
Electronic Devices and Circuit Theory, 10/e 4 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Doping
The electrical characteristics of silicon and germanium are improved
by adding materials in a process called doping.
n-type
p-type
Electronic Devices and Circuit Theory, 10/e 5 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Majority and Minority Carriers
Two currents through a diode:
Majority Carriers
Minority Carriers
Electronic Devices and Circuit Theory, 10/e 6 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
p-n Junctions
Electronic Devices and Circuit Theory, 10/e 7 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
p-n Junctions
At the p-n junction, the excess
conduction-band electrons on the
n-type side are attracted to the
valence-band holes on the p-type
side.
Electronic Devices and Circuit Theory, 10/e 8 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Diodes
Electronic Devices and Circuit Theory, 10/e 9 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Diode Operating Conditions
• No bias
• Forward bias
• Reverse bias
Electronic Devices and Circuit Theory, 10/e 10 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Diode Operating Conditions
No Bias
• No external voltage is applied: VD = 0 V
• No current is flowing: ID = 0 A
• Only a modest depletion region exists
Electronic Devices and Circuit Theory, 10/e 11 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Diode Operating Conditions
Reverse Bias
External voltage is applied across the p-n junction in
the opposite polarity of the p- and n-type materials.
Electronic Devices and Circuit Theory, 10/e 12 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Diode Operating Conditions
Forward Bias
External voltage is applied across the p-n junction in
the same polarity as the p- and n-type materials.
Electronic Devices and Circuit Theory, 10/e 13 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Diode Characteristics
Conduction Region Non-Conduction Region
• The voltage across the diode is 0 V • All of the voltage is across the diode
• The current is infinite • The current is 0 A
• The forward resistance is defined as • The reverse resistance is defined as
RF = VF / IF RR = VR / IR
• The diode acts like a short • The diode acts like open
Electronic Devices and Circuit Theory, 10/e 14 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Actual Diode Characteristics
I D = I S eVD ( nVT
−1 )
kT
VT =
q
Electronic Devices and Circuit Theory, 10/e 15 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Zener Region
The Zener region is in the diode’s
reverse-bias region.
At some point the reverse bias voltage
is so large the diode breaks down and
the reverse current increases
dramatically.
Electronic Devices and Circuit Theory, 10/e 16 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Forward Bias Voltage
The point at which the diode changes from no-bias condition
to forward-bias condition occurs when the electrons and
holes are given sufficient energy to cross the p-n junction.
This energy comes from the external voltage applied across
the diode.
Electronic Devices and Circuit Theory, 10/e 17 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Temperature Effects
Electronic Devices and Circuit Theory, 10/e 18 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
IDEAL VERSUS PRATICAL
Electronic Devices and Circuit Theory, 10/e 19 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Resistance Levels
Semiconductors react differently to DC and AC currents.
• DC (static) resistance
• AC (dynamic) resistance
• Average AC resistance
Electronic Devices and Circuit Theory, 10/e 20 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
DC (Static) Resistance
VD
RD =
ID
Electronic Devices and Circuit Theory, 10/e 21 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
AC (Dynamic) Resistance
In the forward bias region:
26 mV
rd′ = + rB
ID
Electronic Devices and Circuit Theory, 10/e 22 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Average AC Resistance
ΔVd
rav = pt. to pt.
ΔI d
AC resistance can be
calculated using the current
and voltage values for two
points on the diode
characteristic curve.
Electronic Devices and Circuit Theory, 10/e 23 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Diode Equivalent Circuit
Electronic Devices and Circuit Theory, 10/e 24 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Diode Capacitance
In reverse bias, the depletion layer is very large. The diode’s strong positive and
negative polarities create capacitance, CT. The amount of capacitance depends
on the reverse voltage applied.
Electronic Devices and Circuit Theory, 10/e 25 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Reverse Recovery Time (trr)
Electronic Devices and Circuit Theory, 10/e 26 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Diode Specification Sheets
Data about a diode is presented uniformly for many different diodes.
This makes cross-matching of diodes for replacement or design
easier.
1. Forward Voltage (VF) at a specified current and temperature
2. Maximum forward current (IF) at a specified temperature
3. Reverse saturation current (IR) at a specified voltage and
temperature
4. Reverse voltage rating, PIV or PRV or V(BR), at a specified
temperature
5. Maximum power dissipation at a specified temperature
6. Capacitance levels
7. Reverse recovery time, trr
8. Operating temperature range
Electronic Devices and Circuit Theory, 10/e 27 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Diode Symbol and Packaging
Electronic Devices and Circuit Theory, 10/e 28 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Other Types of Diodes
Zener diode
Light-emitting diode
Diode arrays
Electronic Devices and Circuit Theory, 10/e 29 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Zener Diode
Electronic Devices and Circuit Theory, 10/e 30 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Light-Emitting Diode (LED)
Electronic Devices and Circuit Theory, 10/e 31 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Diode Arrays
Multiple diodes can be
packaged together in an
integrated circuit (IC).
Common Anode
A variety of combinations
exist. Common Cathode
Electronic Devices and Circuit Theory, 10/e 32 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Homework
Section 1.8
- 25, 27, 32
Section 1.15
- 51
Section 1.16
- 55
Electronic Devices and Circuit Theory, 10/e 33 Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.