(KAJ) Kurdistan Academicians Journal, 2004, 3(1) Part A

2004 ) 1 (3

The effects of the thickness on the optical

constants of CdSe thin films

Mariwan A. Rasheed
Department of Physics, College of Science, Sulaimani University.Kurdistan Reign
Iraq.

Abstract
Cadmium Selinide (CdSe) thin films have been deposited on clean glass substrates
using vacuum thermal evaporation technique. The optical constants namely refractive
index – n , extinction coefficient – k, and dielectric constants – ε1 and ε2 for four
thicknesses of 346, 472, 621,and 957nm of CdSe films were studied at a substrate
temperature 373K and annealed under a high vacuum at 473K. The extinction
coefficient and the imaginary part of the dielectric constant decrease as the thickness
increase in certain range of wavelengths.

Keywords: CdSe, thin films, Optical constants, refractive index, extinction coefficient, dielectric
constants.

Introduction center.However semiconductor

The semiconductor compounds are
formed from the combination of two or
more elements. The most common
compound semiconductors are those
formed by the elements of groups
compounds are an important group of
materials, used in a wide variety of
optoelectronic devices including detectors,
displays, photovoltaics[1][2][3], and
transistors , therefore semiconductors are
[4]

symmetrical in respect to the IV group, now of increasing importance in modern

which is the group of Si, namely, the II-VI
(cadmium and zinc chalcogenides), and
III-V compounds (gallium and indium
arsenides and antimonides). The
combination in II-VI compounds gives
average four valence electron per atom ,
which is a situation conductive to the
formation of tetrahedral lattice sites
provided that there is tendency toward
sharing the electrons between atoms. In a
compound AB tetrahedral lattice site is the
one in which each atom A is surrounding
symmetrically by four nearest neighboring
B atoms. For this to occur, the B atoms
must sit on the corners of the tetrahedron
with the A atom at its geometrical
technology .
CdS and CdSe are highly sensitive to
visible light, both semiconductors display
peculiar features of photoconductivity[5].
Thermal evaporation,[6] sputtering,glow-
discharge deposition and chemical
deposition techniques have been used for
preparing thin films of II-VI compound
semiconductors successfully [7][8 ] .
CdSe films have been studied in
different thicknesses as well as at a
various substrate temperatures. Elizalde et
al prepared CdSe films of thickness (0.3–
0.5µm)[9]. Nesheva et al found high optical
sensitivity of annealed CdSe films of
thickness (0.02µm) prepared in room

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(KAJ) Kurdistan Academicians Journal, 2004, 3(1) Part A
2004 ) 1 (3

temperature [10]. Nair et al observed the relation [5]:

high sensitivity for the annealed films of λ 1λ 2
thickness(0.1–0.5µm) prepared by d=
chemical deposition at (297-323 K ) [11].
2(n 1 λ 1 − n 2 λ 2 ) ………
Shaalan studied the optical constants of …(2) where n1 and n2 are the refractive
CdSe films and found that the films have indices of the two adjacent maxima (or
the photoresponse in the visible and minima) at the wavelength λ1 and λ2
infrared regions [12]. respectively. These calculations give the
The envelope technique for the optical films under investigation to have
transmission spectrum which has been thickness of 346,472,621,and 957nm.
used successfully for determining optical In the present work, the rate of
constants for many thin film evaporation was 30mg/min. Films with
semiconductors[13-16] will be used to thickness 346, 472, 621 and 957nm were
determine n, k, and ε for Cdse thin films deposited on glass substrates having a
prepared in this work. fixed temperature of 373K. After
deposition the films were annealed at
Experimental method 473K under a vacuum for 20 minutes.
Determination of thicknesses (d) A cupper constantant thermocouple was
used to measure the substrate temperature
Pure CdSe thin films were prepared .
by a technique of thermal evaporation. A
vacuum of about 5×10-6 mbar obtained by Determination of the optical
using (Edward E 306A) coating system. constants
The required weight of CdSe bulk was
charged into a molybdenum boat which is The swanepoel equations were used for
fixed between the two electrodes inside calculating the refractive index (n) for
the chamber . film prepared in this work as follows:
A balance of type (Sartorion LA–230 1
P)was used to the bulk weight.  1
2
The estimated thickness (d) was found n( λ ) =  N + ( N 2 − 2 2
S ) 
 
according to the equation;   …
m ….(3)
d= 2 where
2πR ρ …………….(1)
 1 1  (S 2 + 1)
N = 2S −  +
where (m) is the mass of the bulk, R is  Tm TM  2
the distance between the molybdenum …...(4)
boat and the substrate, and (ρ) is the and
density of the bulk.  1 
1
S= +  2 − 1 
The thicknesses of the films were TS  TS  ………
controlled by the mass quantity method as ….(5)
mentioned in equation 1. These
thicknesses can be calculated through the

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(KAJ) Kurdistan Academicians Journal, 2004, 3(1) Part A
2004 ) 1 (3

TM and Tm are the transmission maximum the real and imaginary parts of the
and minimum respectively on the dielectric constant respectively.
envelope at a certain wavelength. S and TS at σ = 0 , k becomes zero ,we get:
are the refractive index and transmittance n2 = ε 1 ………….….(14)
of the clean substrate respectively. Substituting the value of (α) of eq.(7) in
eq.(6) then the relation between k, λ, and
The extinction coefficient k can be
d can evaluate as:
determined by using the relation
λ x
αλ k= [ −log ( )]
k= 4π d
4π ………
…(6) or
where α is the absorption coefficient λ d
k= log ( )
which can be written as: 4π x ……….(15)
x From eqs.(10 & 11) and neglecting the (-)
α = − log( ) ive sign in solving k a new relation will
d …………
be obtained as :
…(7) (x) is the absorbance and will be 2
obtained from the relation: - ε1 + ε
k = 2

( )
1
2
Em Em 2 2
− (n − 1) (n − S ) 2 4 2 2 ………………(16)
x= Then from eqs.(15 &16) a relation can be
(n − 1) 3 (n − S 2 ) ... obtained for calculating ε as;
...(8)where:
λ2 d
 8n S  ε =[ log 2 ( ) + ε 1 ]1 2
( )( )
2
Em =   − n2 − 1 n2 − S3
 8π
2
x
 Tm  …..
..…(9) (17)
For calculating the dielectric constant
the following relations were obtained Results and discussion
from the electromagnetic theory: The optimized optical constants of
CdSe films were calculated using
ε = ε1 − iε 2 …. transmittance spectra, as shown in
Fig.(1).All spectra reveal very
(10)
n 2 − k 2 = ε1 pronounced interference effects or photon
energies below the fundamental
…………(11)
2 nk = ε 2 absorption edge. Such behavior of the
………….(12) spectra is evidence of thickness
σ uniformity of the films, otherwise the
2nk = interference fringes would have been
wε o … ……..
destroyed, resulting in smooth
transmission curves ..[5]
(13) Where (σ) is the electrical
Fig.(2) shows the observed and
conductivity and (εo) is the dielectric calculated transmission spectra of CdSe
constant of a free space, (ε1)and (ε2) are films as a function of wavelength along

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 (KAJ) Kurdistan Academicians Journal, 2004, 3(1) Part A
2004 ) 1 (3

with the envelope of TM and Tm for all ε1, ε2) respectively on the thickness for
films investigated. However, this method different values of λ for CdSe films.
has been used successfully for calculating From the figures it is clear also that for
refractive index, extinction coefficient, as different values of thickness the decrease
well as the dielectric constants of thin in n leads to the decrease in ε for each
1
films[5][13][15].
Fig.(3) shows that the wavelength wavelength . The increase in k leads to an
dependent of refractive index for various increase in ε2 for each value of
thicknesses of CdSe films. wavelength .
Fig.(4) shows the extinction coefficient It is obvious that decrease in n leads to
of the films as a function of wavelength decreasing ε1 for each values of λ.
for the thicknesses mentioned above. It is As shown in fig.(7) for wavelengths less
shown from the figure that the extinction than 1000 nm the refractive indices
coefficients are increasing with increasing increase with increasing the thickness for
the wavelength in the range of (750– the samples 346,472 and 621 nm. And
1100nm). This figure also indicates that, also the real part of dielectric constant
the extinction coefficient depends on increases with increasing the thickness for
thickness. It can be seen from the figure the same samples for wave lengths less
that for a thicker film the coefficient is than 1000 nm. But the thickness 957 nm is
smaller than that for the thinner one. A more photo responsible for wavelengths
higher wavelengths region are produce more than 1000 nm .
smaller values of k and then Conclusion
consequently increases the radiation
transparency.
1-The envelope technique for the optical
Fig.(5) shows the real part of the dielectric
transmissions successfully applicable for
constant (ε1) for films having different measuring optical constants in CdSe films
thicknesses. prepared by thermal evaporation
The imaginary part of the dielectric technique
constant for the wave length 2-The optical constants found for CdSe
ranges (750-1100nm) for the films at thin film found to be sensitive to is
different thicknesses are shown in fig.(6). thickness.
This figure shows that the imaginary part 3-The wavelength depend on these
of dielectric constant decreases with constants are more sensitive in the lower
increasing thickness of the films. wave length than that for the higher.
As shown in figures (3 & 5), the decrease
in (n) leads to the decrease in ε1 Acknowledgement
according to (eq. 14). But the increase in k The author sincerely thanks Dr. Najeeb
leads to an increase in ε2 according to Toma, in the Physics Department, College
(eq.12) as shown in figures(4 & 6). of Science, Salahaddin University for his
Figures (7, 8, 9 , and 10) explain the keen interest in the progress of this work
dependence of the optical constants (n , k, as well as offering necessary facilities.
2

Fig.(1): The transmission spectra at different thicknesses (d) of CdSe filmsAt

substrate temperatures(373 K) annealed to (473 K) under vaccum:
a. 346nm b. 472nm c. 621 nm d. 957nm

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(KAJ) Kurdistan Academicians Journal, 2004, 3(1) Part A

2004 ) 1 (3

0.9
T sample 2
0.8

0.7
0.6
0.5
0.4
0.3

0.2

0.1
0
400 500 600 700 800 900 1000 1100 1200

0.9
T
0.8 sam ple3
0.7

0.6
0.5

0.4

0.3

0.2

0.1
0
400 600 800 1000 1200

0.9
T
0.8 sam ple 1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400 600 800 1000 1200

0.8
T
sam ple 4
0.7

0.6

0.5

0.4

0.3

0.2

0.1

0
400 600 800 1000 1200 1400

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(KAJ) Kurdistan Academicians Journal, 2004, 3(1) Part A
2004 ) 1 (3

0.9
TM sam ple 2
0.8 Tm
0.7 T

0.6

0.5

0.4

0.3

0.2

0.1

0
500 600 700 800 900 1000 1100 1200

0.9
0.8 TM sam ple 4
0.7 Tm
0.6 T

0.5
0.4
0.3
0.2
0.1
0
500 700 900 1100 1300

0.9
TM sam ple 1
0.8
Tm
0.7 T
0.6

0.5

0.4

0.3

0.2

0.1

0
500 600 700 800 900 1000 1100 1200

0.9
0.8 TM sam ple 3

0.7 Tm
T
0.6
0.5
0.4
0.3
0.2
0.1
0
500 600 700 800 900 1000 1100 1200

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(KAJ) Kurdistan Academicians Journal, 2004, 3(1) Part A
2004 ) 1 (3

Fig.(2): The observed and calculated transmission spectra of CdSe films as a

function of wavelength (λ) for different thicknesses (d):
a. 346nm b. 472nm c. 621nm d. 957nm

Fig.(3):Refractive index of CdSe films as a function of λ at different

thicknesses

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(KAJ) Kurdistan Academicians Journal, 2004, 3(1) Part A
2004 ) 1 (3

Fig.(3): Refractive index of CdSe films as a function of λ at different

Fig.(4): Extinction coefficient of CdSe films as a function of wavelength

20
E11
E12
E13
E14

15

10

5
700 750 800 850 900 950 1000 1050 1100 1150
Wave length(nm)

8
between (n) and (d) of CdSe films at different wavelengths
Fig.(8): The relation between (1) and (d) of CdSe films at different wavelength
k

(KAJ) Kurdistan Academicians Journal, 2004, 3(1) Part A

2004 ) 1 (3

Fig.(5): Real part of dielectric constant ε 1 of CdSe films at different thicknesses.

0.25
E21
E22
E23
0. 2 E24

0.15

0. 1

0.05

0
700 750 800 850 900 950 1000 1050 1100 1150
Wave  length(nm)
3

2.9

2.8

2.7

2.6
1100 nm 1075 nm
1050 nm 1025 nm
2.5 1000 nm 975 nm
950 nm 925 nm
900 nm 850 nm
2.4

2.3
250 350 450 550 650 750 850 950 1050

8.5

8
0.056

7.5
0.25
0.049
1100 nm 1075 nm
7 1050 nm 1025 nm 1100 nm 1075 nm
0.042 1000 nm 975 nm 0.2 1050 nm 1025 nm
6.5
950 nmnm
1100 9251075
nm nm 1000 nm 975 nm
0.035 900 nm 850 nm 950 nm 925 nm
6 1050 nm 1025 nm
0.15 900 nm 850 nm
0.028 1000 nm 975 nm
5.5
950 nm 925 nm
0.021 5 900 nm 850 nm 0.1

0.014 4.5
200 300 400 500 600 700 800 900 1000 1100 1200
0.05
0.007

0 0
200 300 400 500 600 700 800 900 1000 200 400 600 800 1000

9
 d (nm)
n between (k) and (d) of CdSe films at different wavelengths

(KAJ) Kurdistan Academicians Journal, 2004, 3(1) Part A

2004 ) 1 (3

References
n between (1)[1] Soriaga
and (d) M.
of , Stickney J., Bottomley
CdSe films L., and Kim
at different Y., "Thin films preparation-
wavelengths
characterization , application", 2002, Kluwer academic, Plenum publisher,
New York,96.
[2] Cassgnol E. , "Semiconductors",1966, Physics and electronics , Philips
Technical Library, Netherlands.
[3] Ray B., "II-VI Compounds", 1969, pergamom press.
[4] Weimer p.,Phy. Thinfilms,2, 1964,147.
[5] Soliman L. and Ibraheem A., Fizika , 1997,A6,4,181-189.
[6] Rentzsch .R and Bergek H.,"Thin solid film",1976, V.37, 235-239.
[7] Chopra K., "Thin film Phenomena" , 1969, Mc Graw-Hill, Inc.
[8] Elliott S. , "Physics of amorphous materials",1990, 2nd edition, Copublished in
the United States, With John Wiely And Sons Inc.
[9] Elizalde E. and Rueda F. ,"Solar energy materials",1986, 13,407 – 418 .
[10] Nesheva D. , Aroora D. , Ionov R., "Journal of the electrochem. Soc." , 1993,
V. 140, ; P. 2987-97.
[11] Nair M., Zingora P. , "journal of Appl, phys",1993 , 74, 2987-2294.
[12] Shaalan M., Muller R. , "Solar cells",1990, . 28,; ISS.3 ; P. 185.
[13] Swanepoel R. , "J. Phys. Instrum." , 1983, 19-6, Printed in Great Britain.
[14] Rassam N. , "Structure, electrical and optical transport properties of
evaporated CdSe1-xTex thin films",2000, Ph.D. thesis, Baghdad university,
College of education, (Ibn Al-haitham), Physics department,.
[15] Makadsi M., Suhail M. and Rassam B. , "Iraqi journal of science",1997,38,
1.
[16] Ahmad A. , " Some investigations on thermally evaporated CdS thin films",

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‫‪(KAJ) Kurdistan Academicians Journal,‬‬ ‫‪2004, 3(1) Part A‬‬
‫‪2004‬‬ ‫‪) 1 (3‬‬

‫‪2003,M.Sc.‬‬ ‫‪Thesis,University of Salahaddin, Erbil,.‬‬

‫كاريطةرى ئةستورى لة سةر جيَطيرةكانى رِووناكى‬

‫تويذالَةكانى‬ ‫)‪(CdSe‬‬
‫مريوان احمد رشيد‬
‫وي سليماني ‪ /‬هةريمي كوردستان ‪ -‬عيَراق‬
‫َ‬ ‫‪/‬زانك‬ ‫زانست‬ ‫فيزيا ‪/‬كوليَجي‬

‫ثوختة‬

‫كادميؤم سيلينايد بة ئةستوورى جيا جيا لة سةر ضةند شووشةيةكى خاويَن‬

‫نيشيَنرا بة هؤى تةكنيكى طةرمية بةهةلَم بوون لة بؤشايدا‪.‬جيَطيرةكانى‬
‫رِووناكى) هاوكؤلَكةى شكاندنةوة ‪,‬هاوكؤلَكةى دامركاندنةوةو هةردوو‬
‫نةطؤرِى نةطةياندن( بؤ ضوار ئةستوورى)‪ (nm 346,472,621,957‬لة)‪(CdSe‬‬
‫تويذينةوةي لة سةر كرا لة ثلةى طةرمى‬
‫َ‬
‫)‪ (K 373‬كة ثاش ئةو ثلة طةرمية لة )‪ (473K‬بة طةرمى هيَلرايةوة لة‬
‫بؤشايدا ‪ .‬هاوكؤلكةى دامركانةوةو بةشة خةيالَيةكةى نةطؤرِى نةطةياندن‬
‫كةميان كرد بة زيادبوونى ئةستوورى لة مةوداى ديارى كراوى ضةند دريَذة‬
‫شةثؤليَكدا‪.‬‬

‫تاثير السمك على الثوابت البصرية لغشية ) ‪(CdSe‬‬

‫مريوان احمد رشيد‬
‫فيزياء ‪/‬كلية العلوم ‪/‬جامعة السليمانية‪/‬اقليم كردستان‪-‬العراق‬

‫الخلصة‬
‫رسب كادميوم سيلينايد بأسماك مختلفة على ارضيات نظيفة من الزجاج‬
‫بإستخدام تقنية التبخير الحرارى فى الفراغ ‪ .‬تمت دراسة الثوابت البصرية )‬
‫معامل النكسار ‪ ,‬معامل الخمود ‪ ,‬وثابتى العزل ( لربعة اسماك مختلفة )‬
‫‪ (nm 346,472,621,957‬من)‪ (CdSe‬عند درجة حرارة )‪ (K 373‬للغشية والتى‬
‫لدنت الى )‪ . (K 473‬ووجدت نقصان كل من معامل الخمود والجزء الخيالى‬
‫من ثابت العزل عند زيادة سمك الغشية فى مديات معينة من الطوال‬

‫‪11‬‬
(KAJ) Kurdistan Academicians Journal, 2004, 3(1) Part A
2004 ) 1 (3

. ‫الموجية‬

Received .‫دا‬11/3/2004 ‫ وثةسةندكرا لة‬14/12/2003 ‫وةرطيرا لة‬

.14/12/2003Accapaad 11/3/2004

12