Advanced Power

Electronics Corp. AP9402GYT-HF-3

N-channel Enhancement-mode Power MOSFET

Simple Drive Requirement

D
Good Thermal Performance BV DSS 30V
Low On-resistance R DS(ON) 18mΩ
G
RoHS-compliant, halogen-free ID 11.5A
S

Description D
D
Advanced Power MOSFETs from APEC provide the designer with D
D
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.

The PMPAK®3x3 package is specially designed for DC-DC converter S

applications, with a small foot print that offers a backside heat sink S
S
and a low package profile. G PMPAK®3x3

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
3
ID at TA=25°C Continuous Drain Current 11.5 A
3
ID at TA=70°C Continuous Drain Current 9.4 A
1
IDM Pulsed Drain Current 40 A
PD at TA=25°C Total Power Dissipation 3.57 W
TSTG Storage Temperature Range -55 to 150 °C
TJ Operating Junction Temperature Range -55 to 150 °C

Thermal Data

Symbol Parameter Value Units

3
Rthj-c Maximum Thermal Resistance, Junction-case 6 °C/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 35 °C/W

Ordering Information
AP9402GYT-HF-3TR RoHS-compliant halogen-free PMPAK®3x3, shipped on tape
and reel (3000pcs/reel)

®
PMPAK is a registered trademark of Advanced Power Electronics Corp.

©2010 Advanced Power Electronics Corp. USA 201009214-3 1/5

www.a-powerusa.com
 Advanced Power
Electronics Corp. AP9402GYT-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A - 14 18 mΩ
VGS=4.5V, ID=8A - 25 30 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.5 3 V
gfs Forward Transconductance VDS=10V, ID=10A - 23 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA

IGSS Gate-Source Leakage VGS=±20V, VDS=0V - - ±100 nA

2
Qg Total Gate Charge ID=10A - 6.5 10.4 nC
Qgs Gate-Source Charge VDS=15V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.5 - nC
2
td(on) Turn-on Delay Time VDS=15V - 7 - ns
tr Rise Time ID=1A - 6 - ns
td(off) Turn-off Delay Time RG=3.3Ω , VGS=10V - 17 - ns
tf Fall Time - 4 - ns
Ciss Input Capacitance VGS=0V - 510 820 pF
Coss Output Capacitance VDS=15V - 110 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF
Rg Gate Resistance f=1.0MHz - 1.4 2.2 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=2.9A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=10A, VGS=0V, - 18 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC

Notes:
1.Pulse width limited by maximum junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 85°C at steady state.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

©2010 Advanced Power Electronics Corp. USA 2/5

www.a-powerusa.com
 Advanced Power
Electronics Corp. AP9402GYT-HF-3
Typical Electrical Characteristics
60 50

o 10V
T A =25 C T A = 150 o C 10V
7.0V 7.0V
50
6.0V 40 6.0V
5.0V 5.0V
ID , Drain Current (A)

ID , Drain Current (A)

40

30 V G = 4.0V
V G = 4.0V
30

20

20

10
10

0 0
0 2 4 6 8 0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

40 1.8

ID=8A I D =10A
T A =25°C V G =10V
1.6
Normalized RDS(ON)

30 1.4
RDS(ON) (mΩ )

1.2

20 1.0

0.8

10 0.6
2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C)o

Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance

vs. Junction Temperature
10 1.4

8 1.2
Normalized VGS(th) (V)
IS(A)

6 1.0

o o
T j =150 C T j =25 C
4 0.8

2 0.6

0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150

o
V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.

Reverse Diode Junction Temperature

©2010 Advanced Power Electronics Corp. USA 3/5

www.a-powerusa.com
 Advanced Power
Electronics Corp. AP9402GYT-HF-3
Typical Electrical Characteristics (cont.)
800
f=1.0MHz
10

I D = 10 A
V DS =15V
VGS , Gate to Source Voltage (V)

8
600

C iss

C (pF)
6

400

200

2
C oss
C rss
0 0
0 2 4 6 8 10 12 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthja)

Duty factor=0.5
Operation in this area
limited by RDS(ON)
10

100us 0.2

1ms
ID (A)

0.1 0.1
1

10ms
PDM
100ms 0.05

t
1s 0.02 T
0.1
0.01 Duty factor = t/T
T A =25 C o DC Peak Tj = PDM x Rthja + T a
Rthia=85 °C/W
Single Pulse Single Pulse

0.01 0.01
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V

QGS QGD
10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveforms Fig 12. Gate Charge Waveform

©2010 Advanced Power Electronics Corp. USA 4/5

www.a-powerusa.com
 Advanced Power
Electronics Corp. AP9402GYT-HF-3
Package Dimensions: PMPAK®3x3

A
B
e SYMBOLS Millimeters
c1 MIN NOM MAX
A 2.95 3.00 3.05
B 2.35 2.40 2.45
c2 e 0.65 (ref.)
C
b2 0.30 0.35 0.40
C 2.95 3.00 3.05
c1 0.37 0.42 0.47
c3 c2 1.65 1.70 1.75
c3 0.37 0.42 0.47
b2
D 0.80 0.85 0.95
d1 0.00 - 0.05
E 0.178 0.203 0.228

1. All dimensions are in millimeters.

D d1 2. Dimensions do not include mold protrusions.

Marking Information:

Product: AP9402

9402GYT Package code:

GYT = RoHS-compliant halogen-free PMPAK®3x3
YWWSSS Date Code (YWWSSS)
Y: Last Digit Of The Year
WW: Work week
SSS: Lot code sequence

©2010 Advanced Power Electronics Corp. USA 5/5

www.a-powerusa.com