Middle Technical University Electronics Lab.

Electrical Engineering Technical College 2nd Stage

Electrical Power Technical Engineering Dept. Mohammed D. Altamemi

Experiment 15
The EMOSFET n-channel characteristics

15-1 Object:

In this experiment we will study enhancement type MOSFET n-channel

characteristics.

15-2 Theory:

There are two types of MOSFET transistors the depletion type and enhancement
type, each one of them has some of special characteristics and operation modes as
follow:

15-2-1 Enhancement MOSFET:

If the internal structure of a MOSFET of n channel is changed, a new type of
MOSFET can be obtained, able to conduct only in the enhancement mode.
15-2-2 Formation of The Inverse Layer:
Figure (15-1) shows a MOSFET of the enhancement type of n channel. the
substrate extends to the silicon oxide; physically, a n channel between the source and
the drain is no longer available.

Figure (15-1) the enhancement type channel n MOSFET

When VGS=0, the power supply VDD tries to force the passage of the free
electrons from the source to the drain, but the substrate type p only has a few
electrons thermally produced in the conduction band. So the current between source
and drain is zero, for this reason the MOSFET of the enhancement type is also called
not normally conducting or normally turned off MOSFET.
When the graduator voltage is positive, it induces negative charges in the
substrate type p. this mean it can attract enough free electrons to form a thin layer of
electrons between source and drain.
When the voltage in the graduator is positive enough, all the space close to the
silicon oxide are filled, so the free electrons begin to flow from the source to the

MD
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi

drain. The effect is equivalent to creating a thin layer of type n next to the silicon
oxide, this layer of free electrons is called inverse layer type n.
15-2-3 Threshold Voltage:
The minimal voltage VGS created by the inverse layer type n is called threshold
voltage VGS(th) when VGS is less then VGS(th), no current flows the source to the drain.
VGS(th) can vary from a value of less than 1V to one greater than 5V depending
on the particular device that is being use.
15-2-4 Drain Curves:
Figure (15-2) shows a family of drain curves for enhancement type channel n
MOSFET, together with load line curve for source configuration circuit. The lowest
curve is the curve of VGS(th) when VGS is less than VGS(th), the drain current is
extremely small. When VGS is bigger than VGS(th) a considerable current flows, whose
value depends on VGS.

Figure (15-2) ID-VDS characteristics of the EMOSFET n channel

15-2-5 Transconductance Curve:

Figure (15-3) shows the transconductance curve. The curve is parabolic or of
quadratic law. In the vertex of the parabola is in VGS(th).

Figure (15-3) ID-VGS characteristics of the E MOSFET type n channel

15-2-6 Diagrammatical symbol:

The diagrammatical symbol of the figure (15-4) has the line of the channel
dotted to indicate the normal condition of no conducting. The arrow points to the
inverse layer type n.

MD
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi

There is also a MOSFET of the enhancement or widening of channel p. The

diagrammatical symbol is similar, except that the arrow points outward. In a
MOSFET of enhancement type with channel p, all the voltages and currents are
opposite to that of the MOSFET of the enhancement type with channel n.

Figure (15-4) symbol of the E MOSFET type n channel and p channel

15-2-7 Maximum Voltage Graduator Source:

The MOSFET of the depletion and enhancement type has a thin layer of
insulating silicon oxide, since the insulating layer is very thin, it is easy to destroy it
for many reasons as follow:
1. if an excessive graduator- source voltage applied.
2. If the MOSFET inserting in a circuit when power supply is connected.
3. The transient voltage caused by inductive can exceed nominal voltage VGS(max).
4. When pick up a MOSFET with the hand can induce a static charge exceeds the
nominal voltage VGS(max)
Some MOSFET are protected with an internal zener diode that is connected between
the graduator and source. The zener voltage is less than the nominal voltage V GS(max).
therefore, the zener diode is destroyed before any damage is done to the thin
insulating layer.

15-3 Procedures:
Figure (15-5) is a MOSFET transistor n channel with an input resistance of
1KΩ and two zener diode of 15V between gate and source that protect it from too
high voltages.

Figure (15-5) EMOSFET n channel

MD
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi

1. Carry out the circuit assembly shown in figure (15-5).

2. With a voltmeter measure the voltage between gate and source and select little by
little the values from table (15-1) and then measure the current IDS and make a
note of it.
Table (15-1)
VGS (V) IDS(mA)
1.8
2
2.28
2.4
2.64
3
3.2

3. Use potentiometer and feed the gate of MOSFET, and use a voltmeter to measure
VDS in parallel with transistor, and then fill in the table (15-2),where P is the
power dissipated by the transistor.
Table (15-2)
IDS(mA) IG(mA) VDS(V) P (mW)
0
0.664
4.4
11.3
12

An easy way to control the MOSFET gate, is to sent a train of modulated in width
so that the superior voltage of the pulse will be capable of making the transistor
to conduct totally.
4. In the practice model, function generator with a square wave, the frequency can
be modulated, the width of the positive part. (use oscilloscope to see this waves)
5. Carry out the assembly in figure (15-6), check how the luminous intensity varies
when varying the frequency and the width of the pulses. Notice how it must have
a high frequency so as not to observe a blink effect and that, in this case, the
pulse width determines the current consumed.
6. Select a frequency of 1 KHz with vary, little by little, the width of the pulse; and
fill in table (15-3).

Table (15-3)
Positive fraction Voltage in the Current in the load Power in the load
of the pulse load (V) (mA) (W)
0.2
0.4
0.6
0.8
1

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Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi

Figure (15-6) connection of function generator with the circuit

15-4 Discussions:

1. Find the threshold voltage for the transistor used in experiment in table (15.1).
2. Why do not need for a ammeter to measure current in gate.
3. In table (15.2) find where is maximum power dissipated in transistor.
4. In table (15.3) find where is maximum power dissipated in load

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