Bicol State College of Applied Sciences and Technology

City of Naga
College of Engineering and Architecture

Electronics Circuits Analysis and Design

BJT AMPLIFIER

Kristle Irene Mae B. Albino

BS ECE - 3B

Engr. Bennyvic Joyce Esguerra

Instructor

August 30, 2017

Design a BJT Amplifier having the following specifications:

Vcc=12V

ẞ=200

Zi= 10kΩ

RL=1kΩ

ro= ∞Ω

fc≥1kHz
Choosing the values of R1, R2, RE, and RC.

Rc=RL; To maximize the power delivered to the load.

Rc=1kΩ
𝑅𝑐 ||𝑅𝐿
𝑨𝒗 = −
𝑟𝑒

1𝑘Ω||1𝑘Ω
−𝟔 = −
𝑟𝑒

re=83.333Ω

𝒁𝒊 = 𝑅1 ||𝑅2 ||𝛽𝑟𝑒

10000Ω = 𝑅𝐵 ||(200)(83.333Ω)
RB=25kΩ

RB=𝑅1 ||𝑅2

R1=150kΩ

25kΩ=150kΩ||R2

R2=30kΩ
26𝑚𝑉 26𝑚𝑉
𝑰𝑬 = =
𝑟𝑒 83.333Ω

=0.312mA

IC=ẞIB

0.312mA=(200)(IB)

IB=1.56𝜇𝐴
𝑅2 30𝑘𝛺
𝑬𝑻𝑯 = 𝑉𝐶𝐶 ( ) = 12𝑉 ( )
𝑅1 ||𝑅2 150𝑘𝛺 + 30𝑘𝛺

= 𝟐𝑽

2V – (1.56𝜇𝐴)(25kΩ)-0.7V-(0.312mA)(RE)=0

RE=4.042kΩ
 BJT Amplifier Circuit Design

Computations:

DC Analysis
𝑹𝑻𝑯 = 𝑅1 ||𝑅2 = 150𝑘𝛺||30𝑘𝛺

= 𝟐𝟓𝒌𝜴

𝑅2 30𝑘𝛺
𝑬𝑻𝑯 = 𝑉𝐶𝐶 ( ) = 12𝑉 ( )
𝑅1 ||𝑅2 150𝑘𝛺 + 30𝑘𝛺

= 𝟐𝑽

𝐸𝑇𝐻 − 𝑉𝐵𝐸 2𝑉 − 0.7𝑉

𝑰𝑩 = =
𝑅𝑇𝐻 + (𝛽 + 1)(𝑅𝐸 ) 25𝑘𝛺 + (200 + 1)(4.042𝑘𝛺)

= 𝟏. 𝟓𝟓𝟐𝝁𝑨

𝑰𝑬 = 𝐼𝐵 (𝛽 + 1) = (1.552𝜇𝐴)(200 + 1)

= 𝟎. 𝟑𝟏𝟐𝒎𝑨
 AC Analysis
26𝑚𝑉 26𝑚𝑉
𝒓𝒆 = =
𝐼𝐸 0.312𝑚𝐴
𝒓𝒆 = 𝟖𝟑. 𝟑𝟑𝟑𝜴

𝒁𝒊 = 𝑅1 ||𝑅2 ||𝛽𝑟𝑒 = 150𝑘𝛺||30𝑘𝛺||(200)(83.333𝛺)

𝑹𝒊 = 𝟏𝟎𝒌𝜴

1 1
𝒇𝑳𝑺 = =
2𝜋𝑅𝑖 𝐶𝑠 2𝜋(10𝑘𝛺)(0.1𝜇𝐹)

𝒇𝑳𝑺 = 𝟏𝟓𝟗. 𝟏𝟓𝟓𝑯𝒛

𝑹𝒐 = 𝑅𝐶 ||𝑟𝑜 ||𝑅𝐿 = 1𝑘𝛺||∞||1𝑘𝛺

= 500𝛺

1 1
𝒇𝑳𝑪 = =
2𝜋(𝑅𝑜 + 𝑅𝐿 )𝐶𝐶 2𝜋(500𝛺 + 1𝑘𝛺)(1𝜇𝐹)

𝒇𝑳𝑪 = 𝟏𝟎𝟔. 𝟏𝟎𝟑𝑯𝒛

𝑅1 ||𝑅2 150𝑘𝛺|30𝑘𝛺
𝑹𝒆 = 𝑅𝐸 ||( + 𝑟𝑒 ) = 4.042𝑘𝛺|| ( + 83.333𝛺)
𝛽 200

= 𝟏𝟗𝟖. 𝟎𝟕𝟐𝜴

1 1
𝒇𝑳𝑬 = =
2𝜋𝑅𝑒 𝐶𝐸 2𝜋(198.072𝛺)(0.5𝜇𝐹)

𝒇𝑳𝑬 = 𝟏. 𝟔𝟎𝟕𝒌𝑯𝒛

𝒇𝑪 = 𝟏. 𝟔𝟎𝟕𝒌𝑯𝒛

𝑅𝑐 ||𝑅𝐿 1𝑘𝛺||1𝑘𝛺
𝑨𝒗 = − =−
𝑟𝑒 83.333𝛺

𝑨𝒗 = −𝟔
 𝑽𝑪 = 𝑉𝑐𝑐 − 𝐼𝑐 𝑅𝑐 = 12𝑉 − (0.312𝑚𝐴)(1𝑘𝛺)

= 11.688V

𝑽𝑬 = 𝐼𝐸 𝑅𝐸 = (0.312𝑚𝐴)(4.042𝑘𝛺)

=1.261V

𝑽𝑩 = 0.7 + 𝐼𝐸 𝑅𝐸 = 0.7 + (0.312𝑚𝐴)(4.042𝑘𝛺)

=1.961V

𝑽𝒐 = 𝐴𝑉 𝑉𝑖𝑛 = (−6𝑉)(10000𝛺)(1.552𝜇𝐴)

=-0.093V
Frequency Response