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jp
SANKEN ELECTRIC
DKG1020 Aug. 2011

Features Package
・Low on-state resistance TO252
・Built-in gate protection diode
・SMD PKG

Applications
・DC / DC converter
・Switching Key Specifications
・V(BR)DSS =100V (ID=100uA)
Internal Equivalent Circuit ・R DS(ON)=52 mΩ max. (VGS=10V, ID=10A)
・R DS(ON)=59 mΩ max. (VGS=4.5V, ID=10A)
Ｄ(2)

Ｇ(1)

Ｓ(3)

Absolute maximum ratings

(Ta=25°C)
Characteristic Symbol Rating Unit

Drain to Source Voltage VDSS 100 V

Gate to Source Voltage VGSS ±20 V

Continuous Drain Current ID ±20 A

Maximum Power Dissipation PD 40 (Tc= 25°C) W

Single Pulse Avalanche Energy EAS *1 62. 5 mJ

Channel Temperature Tch 150 °C

Storage Temperature Tstg -55 t o + 150 °C

Maximum Drain to Source dv/dt dv/dt 1*1 0. 6 V/ns

Peak diode recovery dv/dt dv/dt 2*2 5 V/ns

Peak diode recovery di/dt di/dt*2 100 A/μs

*1 VDD=14V, L=1mH, IL=11A, unclamped, See Fig.1

*2 IsD=20A, See Fig.2

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
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SANKEN ELECTRIC
DKG1020 Aug. 2011

Electrical characteristics
(Ta=25°C)
Limits
Characteristic Symbol Test Conditions Unit
MIN TYP MAX

Drain to Source breakdown Voltage V(BR)DSS ID=100μA,VGS=0V 100 V

Gate to Source Leakage Current IGSS VGS=±20V ±10 μA

Drain to Source Leakage Current IDSS VDS=100V, VGS=0V 100 μA

Gate Threshold Voltage VTH VDS=10V, ID=1mA 1.5 2.0 2.5 V

Forward Transconductance Re(yfs) VDS=10V, IDD=10A 9.0 S

ID=10A, VGS=10V 41 52
Static Drain to Source On-Resistance RDS(ON) mΩ
ID=10A, VGS=4.5V 45 59

Input Capacitance Ciss 2200

VDS=10V
Output Capacitance Coss VGS=0V 210 pF
f=1MHz
Reverse Transfer Capacitance Crss 11 0

Turn-On Delay Time td(on) 40

ID=10A, VDD=50V 140

Rise Time tr
RG=20Ω, RL=5Ω
ns
VGS=10V
Turn-Off Delay Time td(off) 280
See Fig.3

Fall Time tf 340

Total Gate Charge Qg 47

VDD=50V
Gate to Source Charge Qgs VGS=10V 8 nC
ID=20V
Gate to Source Charge Qgd 7

Source-Drain Diode Forward Voltage VSD ISD=20A,VGS=0V 0.9 1.2 V

Source-Drain Diode Reverse Recovery Time trr 50 ns

ISD =20A
ｄi/dt=100A/μs
Source-Drain Diode Reverse Recovery Time Qrr 60 nC

Tharmal Resistance Junction to Case Rth(ch-c) 3.125 °C/W

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD. Page 2
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SANKEN ELECTRIC
DKG1020 Aug. 2011

Characteristic Curves (Tc=25°C)

ID - VDS characteristics (typical) ID - VGS characteristics (typical)

VDS=10V
4.5V
20 20
VGS=10V 3.5V
3.0V

15 15
ID (A)

ID (A)
10 10
Tc=-125℃
75℃
25℃
5 5
-30℃

0 0
0 0.5 1 1.5 0 1 2 3 4 5
VDS （V) VGS （V)

RDS(ON) - Tc characteristics (typical) RDS(ON) - ID characteristics (typical)

ID=10A
100 60

VGS=4.5V
80

40
VGS=4.5V
60
RDS(ON) (mΩ)

RDS(ON) (mΩ)

10V
40
20
10V
20

0 0

-75 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20

Tc (℃)
ID (A)

VDS - VGS characteristics (typical) Re(yfs) - ID characteristics (typical)

VDS=10V
1.5 1000

1 100
VDS (V)

ID=20A
Re(yfs) (S)

Tc=-30℃
0.5 10A 10 25℃
75℃
5A 125℃

0 1
0 5 10 15 20 1 10 100
VGS (V) ID （A)

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD. Page 3
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SANKEN ELECTRIC
DKG1020 Aug. 2011

Characteristic Curves (Tc=25°C)

Capacitance - VDS characteristics

VGS=0V IDR - VSD characteristics (typical)
(typical) f=1MHz

10000 20

Ciss
15
1000
Capa (pF)

IDR (A)
Tc=125℃
10
75℃
Coss 25℃
100
-30℃
Crss 5

10
0
0 10 20 30 40 50
VDS (V) 0 0.5 1 1.5
VSD （V)

TRANSIENT THERMAL RESISTANCE - PULSE WIDTH Single Pulse

10

1
rth(ch-c) (℃/W)

0.1

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
PW (sec)

PD-Tc characteristics SAFE OPARATING AREA

Tc=25℃
Single Pulse
50 100

40 With infinite heatsink

PT=100us
10 PT=1ms
30
ID (A)
ＰＤ (W)

20
1

10

0 0.1
0 50 100 150 1 10 100 1000
Tc (℃)
VDS (V)

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
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SANKEN ELECTRIC
DKG1020 Aug. 2011
Fig.1 Unclamped Inductive Test Method

1 V(BR)DSS
EAS= ･L･ILP2・
2 V(BR)DSS - VDD

(a) Test Circuit (b) Waveforms

Fig.2 Diode Reverse Recovery Time Test Method

ISD

trr
di/dt

IRM VDD

dv/dt 2

V GS

0V VSD

(a) Test Circuit (b) Waveforms

Fig.3 Switching Time Test Method

90%

VGS

10%

90%

VDS

10%

td(on) tr td(off) tf

Duty cycle≤1% ton toff

(a) Test Circuit (b) Waveforms

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
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SANKEN ELECTRIC
DKG1020 Aug. 2011

Outline
TO252

Pin assignment
(1) Gate
(2) Drain
(3) Source

Weight Approx.0.33g

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD. Page 6