Middle Technical University Electronics Lab.

Electrical Engineering Technical College 2nd Stage

Electrical Power Technical Engineering Dept. Mohammed D. Altamemi

Experiment 16
The EMOSFET p-channel characteristics

16-1 Object:

In this experiment we will study enhancement type MOSFET p-channel

characteristics.

16-2 Theory:

There are two types of EMOSFET transistors the n-channel and p-channel, each
one of them has some of special characteristics and operation modes as follow:

Figure (16-1) shows a MOSFET of the enhancement type of p channel. the

substrate extends to the silicon oxide; physically, a p channel between the source and
the drain is no longer available.

Figure (16-1) internal structure of EMOSFET p- channel

When VGS=0, the power supply VDD tries to force the passage of the free
electrons from the source to the drain, but the substrate type n only has a few holes
thermally produced in the conduction band. So the current between source and drain
is zero, for this reason the MOSFET of the enhancement type is also called not
normally conducting or normally turned off MOSFET.
When the graduator voltage is negative, it induces positive charges in the
substrate type n. this mean it can attract enough positive holes to form a thin layer of
holes between source and drain.
When the voltage in the graduator is negative enough, all the space close to the
silicon oxide are filled, so the holes begin to flow from the source to the drain. The
effect is equivalent to creating a thin layer of type p next to the silicon oxide, this
layer of holes is called inverse layer type p.
16-2-1 Threshold Voltage:
The minimal voltage VGS created by the inverse layer type p is called threshold
voltage VGS(th) when VGS is less then VGS(th), no current flows the source to the drain.
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi

VGS(th) can vary from a value of less than 1V to one greater than 5V depending
on the particular device that is being use.
16-2-2 Drain Curves:
Figure (16-2) shows a family of drain curves for enhancement type MOSFET p
channel. The lowest curve is the curve of VGS(th) when VGS is less than VGS(th), the
drain current is extremely small. When VGS is bigger than VGS(th) a considerable
current flows, whose value depends on VGS.

Figure (16-2): a- internal structure, b- ID-VGS characteristics, c- ID-VDS

characteristics of of EMOSFET P channel

16-2-3 Transconductance Curve:

Figure (16-3b) shows the transconductance curve. The curve is parabolic or of
quadratic law. In the vertex of the parabola is in VGS(th).

16-2-4 Diagrammatical symbol:

The diagrammatical symbol of the figure (16-3) has the line of the channel
dotted to indicate the normal condition of no conducting. The arrow points outward.
In a MOSFET of enhancement type with channel p, all the voltages and currents are
opposite to that of the MOSFET of the enhancement type with channel n.

Figure (16-3) electrical symbol of EMOSFET p- channel

Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi

16-3 Procedures:

The study of p channel EMOSFET transistor is totally analogous to that of n

channel.

1. Carry out the assembly shown in figure (16-4).

Figure (16-4) circuit of EMOSFET P-channel

2. Measure the voltage between the gate and the source with a voltmeter and select
little by little the values table (16-1), measure the current IDS.

Table (16-1)
VGS (V) IDS(mA)
0
-1.2
-3.72
-4.2
-7.2

3. Controlling the voltage that is supplied to the transistor through the gate using the
voltmeter of circuit 1, fill in the table (16-2), where P is the power dissipated by
the transistor. In the last column write the values for the maximum consumption.
Table (16-2)
IDS (mA) IG (mA) VGS (V) P (mW)
0
-3.55µ
-12

4. Carry out the assembly of figure (16-5).

5. Check how the luminous intensity varies when frequency and width of the pulse
are changed. Notice how it must have a high frequency for a blinking effect not to
be noticed, and that in this case the pulse width determines the current consumed.
Middle Technical University Electronics Lab.
Electrical Engineering Technical College 2nd Stage
Electrical Power Technical Engineering Dept. Mohammed D. Altamemi

Figure (16-5) connection of EMOSFET P channel with function generator

6. Select a frequency of (fi = 1 kHz, Vp = 10 V) with the voltmeter vary the width of
the pulse and fill in table (16-3).

Table (12-6)
Positive fraction Voltage in the Current in the load Power in the load
of the pulse load (V) (mA) (W)
0.2
0.4
0.6
0.8
1

16-4 Discussion:

1. Draw the ID-VGS characteristics of result in table (16-1).

2. What is the deference between n-channel and p-channel of EMOSFET.