UNISONIC TECHNOLOGIES CO.

, LTD
50N06 MOSFET

50 Amps, 60 Volts
N-CHANNEL POWER MOSFET
1

DESCRIPTION TO-220
The UTC 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt. 1
It is mainly suitable electronic ballast, and low power switching
mode power appliances. TO-220F

FEATURES
*Pb-free plating product number: 50N06L
* RDS(ON) = 23mΩ@VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability

SYMBOL
2.Drain

1.Gate

3.Source

ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Normal Lead Free Plating 1 2 3
50N06-TA3-T 50N06L-x-TA3-T TO-220 G D S Tube
50N06-TF3-T 50N06L-x-TF3-T TO-220F G D S Tube

50N06L-TA3-T
(1)Packing Type (1) T: Tube

(2)Package Type (2) TA3: TO-220, TF3: TO-220F

(3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn

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50N06 MOSFET

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
TC = 25℃ 50 A
Continuous Drain Current ID
TC = 100℃ 35 A
Drain Current Pulsed (Note 1) IDM 200 A
Single Pulsed Avalanche Energy (Note 2) EAS 480 mJ
Repetitive Avalanche Energy (Note 1) EAR 13 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 7 V/ns
Total Power Dissipation (TC = 25℃) 130 W
PD
Derating Factor above 25℃ 0.9 W/℃
Operation Junction Temperature TJ -55 ~ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL MIN TYP MAX UNIT
Thermal Resistance, Junction-to-Case θJC 1.15 °C/W
Thermal Resistance, Case-to-Sink θCS 0.5 °C/W
Thermal Resistance, Junction-to-Ambient θJA 62.5 °C/W

ELECTRICAL CHARACTERISTICS TC = 25℃ unless otherwise specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 60 V
Breakdown Voltage Temperature ID = 250 µA,
△BVDSS/△TJ 0.07 V/℃
Coefficient Referenced to 25℃
VDS = 60 V, VGS = 0 V µA
Drain-Source Leakage Current IDSS 1
VDS = 48 V, TC = 125℃ µA
Gate-Source Leakage Current VGS = 20V, VDS = 0 V 100 nA
IGSS
Gate-Source Leakage Reverse VGS = -20V, VDS = 0 V -100 nA
On Characteristics
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 µA 2.0 4.0 V
Static Drain-Source On-State
RDS(ON) VGS = 10 V, ID = 25 A 18 23 mΩ
Resistance
Dynamic Characteristics
Input Capacitance CISS 900 1220 pF
VGS = 0 V, VDS = 25 V
Output Capacitance COSS 430 550 pF
f = 1MHz
Reverse Transfer Capacitance CRSS 80 100 pF
Dynamic Characteristics
Turn-On Delay Time tD(ON) 40 60 ns
Rise Time tR VDD = 30V, ID =25 A, 100 200 ns
Turn-Off Delay Time tD(OFF) RG = 50Ω (Note 4, 5) 90 180 ns
Fall Time tF 80 160 ns
Total Gate Charge QG 30 40 nC
VDS = 48V, VGS = 10 V
Gate-Source Charge QGS 9.6 nC
ID = 50A, (Note 4, 5)
Gate-Drain Charge (Miller Charge) QGD 10 nC

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50N06 MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltage VSD IS = 50A, VGS = 0 V 1.5 V
Integral Reverse p-n Junction Diode in the
Continuous Source Current IS MOSFET 50
D

A
Pulsed Source Current ISM G 200

Reverse Recovery Time tRR IS = 50A, VGS = 0 V 54 ns

Reverse Recovery Charge QRR dIF / dt = 100 A/µs 81 µC
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=5.6mH, IAS=50A, VDD=25V, RG=0Ω, Starting TJ=25℃
3. ISD≤50A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%
5. Essentially independent of operating temperature.

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50N06 MOSFET
TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

-
+

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * I SD controlled by pulse period
VGS * D.U.T.-Device Under Test
as D.U.T.

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

I FM, Body Diode Forward Current

ISD
(D.U.T.) di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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50N06 MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

RL
VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V D.U.T. t D(ON ) tD (OFF)
Pulse Width ≤ 1μs tR tF
Duty Factor ≤0.1%

Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

Same Type
50kΩ as D.U.T.
QG
12V 10V
0.2μF 0.3μF
VDS
QGS QGD
VGS

DUT
VG
1mA

Charge

Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform

L
VDS

BVDSS

RG
VDD

10V D.U.T.
tp IAS
tp Time

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

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50N06 MOSFET

TYPICAL CHARACTERISTICS

On-State Characteristics Transfer Characteristics

V GS
Top: 15V
102 10 V 102
8 V
7 V
Drain Current, ID (A)

Drain Current, ID (A)

6 V
5 .5V

℃
5V

1 50
Bottorm : 4.5V

101 4.5V 10 1

℃
25
Note:
1. VDS=50V
2. 250µs Pulse Test
100 100
10-1 10 0 101 2 3 4 5 6 7 8 9 10
Drain-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V)

On-Resistance Variation vs. Drain Current On State Current vs. Allowable Case
Drain-Source On-Resistance, RDS(ON) (mΩ)

and Gate Voltage Temperature

2.5
102
Reverse Drain Current, ISD (A)

2.0

1.5 150℃

10 1 25℃
1.0 VGS=10V

V GS=20V *Note:
0.5
1. VGS=0V
2. 250µs Test
0.0 10 0
0 20 40 60 80 100 120 140160180 200 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain Current, I D (A) Source-Drain Voltage, VSD (V)

Capacitance Characteristics
Gate Charge Characteristics
(Non-Repetitive)
3000 12
CISS=CGS +CGD (C DS=shorted)
Gate-to-Source Voltage, VGS (V)

COSS =C DS+C GD
2500 CRSS =CGD 10 VDS=30V
C ISS
Capacitance (pF)

2000 8

*Note:
1500 6
1. VGS=0V
VDS=48V
COSS 2. f = 1MHz
1000 4

500 2 *Note: ID=50A

CRSS
0 0
5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40 45
Drain-Source Voltage, VDC (V) Total Gate Charge, QG (nC)

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50N06 MOSFET
TYPICAL CHARACTERISTICS(Cont.)

Breakdown Voltage Variation vs. Junction On-Resistance Variation vs.

Temperature Junction Temperature

Drain-Source On-Resistance, RDS(ON),

1.2 3.0
Drain-Source Breakdown Voltage,

2.5
1.1
BVDSS(Normalized)

2.0

(Normalized)
1.0 1.5

*Note: 1.0
0.9 1. VGS=0V *Note:
2. ID=250µA 0.5 1. VGS=10V
2. I D=25A
0.8 0.0
-100 -50 0 50 100 150 200 -50 0 50 100 150
Junction Temperature, T J (℃) Junction Temperature, T J (℃)

Maximum Drain Current vs. Case Temperature

Maximum Safe Operating
3
10 Operation in This 50
Area by RDS (on)
100µs 40
Drain Current , ID,(A)

Drain Current, ID (A)

2
10
1ms
30
10ms
1
10
10ms
20
0
*Note:
10 1. T =25℃
c 10
2. T J=150℃
-1 3. Single Pulse
10 0
10
1
10
0
10
1
10
2
25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Case Temperature, T C (℃)

Transient Thermal
Response Curve
Thermal Response, ZθJC (t)

100 D=0.5

0.2
0.1
0.05
10-1
0.02
*Note:
1. ZθJ C (t ) = 1.42℃/W Max.
0.01 2. Duty Factor , D=t1/ t2
3. TJ -TC =PDM×ZθJ C (t)
Single pulse
-2
10 -5 0
10 10 -4 10-3 10-2 10-1 10 101
Square Wave Pulse Duration, t1 (sec)

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50N06 MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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