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DSEC 60-06A

DSEC 60-06B

HiPerFREDTM Epitaxial Diode IFAV = 2x 30 A


with common cathode and soft recovery VRRM = 600 V
trr = 30/35 ns

VRSM VRRM Type TO-247 AD

V V
A
600 600 DSEC 60-06A A C A C C (TAB)
600 600 DSEC 60-06B A

A = Anode, C = Cathode, TAB = Cathode


Both Versions
Symbol Conditions Maximum Ratings
IFRMS 70 A
IFAVM rect., d = 0.5; TC (Vers. A) = 135°C 30 A
TC (Vers. B) = 125°C
Features
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 250 A ●
International standard package
EAS TVJ = 25°C; non-repetitive 0.2 mJ ●
Planar passivated chips
IAS = 1.3 A; L = 180 µH ●
Very short recovery time

Extremely low switching losses
IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A ●
Low IRM-values
TVJ -55...+175 °C ●
Soft recovery behaviour
TVJM 175 °C ●
Epoxy meets UL 94V-0
Tstg -55...+150 °C
Ptot TC = 25°C 165 W
Applications
Md mounting torque 0.8...1.2 Nm

Antiparallel diode for high frequency
Weight typical 6 g
switching devices

Antisaturation diode

Snubber diode
Symbol Conditions Characteristic max. Values ●
Free wheeling diode in converters
Vers. A Vers. B
and motor control circuits
IR ① TVJ = 25°C VR = VRRM 250 250 mA ●
Rectifiers in switch mode power
TVJ = 150°C VR = VRRM 1 2 mA supplies (SMPS)

Inductive heating
VF ② IF = 30 A; TVJ = 150°C 1.25 1.56 V ●
Uninterruptible power supplies (UPS)
TVJ = 25°C 1.60 2.51 V ●
Ultrasonic cleaners and welders
RthJC 0.9 0.9 K/W
RthCH 0.25 0.25 K/W
Advantages
trr IF = 1 A; -di/dt = 200 A/ms; typ. 35 typ. 30 ns
VR = 30 V; TVJ = 25°C ●
Avalanche voltage rated for reliable
IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms typ. 6 typ. 4 A operation
TVJ = 100°C ●
Soft reverse recovery for low
EMI/RFI

Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 ms, Duty Cycle < 2.0 % Dimensions see outlines.pdf

Data according to IEC 60747 and per diode unless otherwise specified

IXYS reserves the right to change limits, test conditions and dimensions.
008

© 2000 IXYS All rights reserved 1-3


DSEC 60-06A

70 3000 50
T = 100°C T = 100°C
A nC VVJ = 300V A VVJ = 300V
R R
60 2500
40
Qr IRM
IF= 60A
IF 50
2000 IF= 30A
TVJ=150°C IF= 15A
IF= 60A 30
40
IF= 30A
TVJ=100°C 1500 IF= 15A
30
20
1000
20
TVJ=25°C 10
10 500

0 0 0
0.0 0.5 1.0 1.5 V2.0 100 A/ms 1000 0 200 400 600 A/ ms 1000
800
VF -diF/dt -diF/dt
Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr Fig. 3 Peak reverse current IRM
versus -diF/dt versus -diF/dt

2.0 130 20 1.2


TVJ= 100°C
ns
VR = 300V V µs
120 VFR
VFR tfr tfr
1.5 trr 15 0.9
Kf 110 IF= 60A
IF= 30A
IF= 15A
1.0 100 10 0.6
I RM

90
0.5 5 0.3
Qr 80 TVJ= 100°C
IF = 30A
0.0 70 0 0.0
0 40 80 120 °C 160 0 200 400 600 ms 1000
800
A/ 0 200 400 600 A/ ms 1000
800
TVJ -diF/dt diF/dt
Fig. 4 Dynamic parameters Qr, IRM Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr
versus TVJ versus diF/dt

1 Constants for ZthJC calculation:


K/W i Rthi (K/W) ti (s)
1 0.465 0.0052
0.1 2 0.179 0.0003
ZthJC 3 0.256 0.0396

0.01

DSEP30-06A DSEC60-06A
0.001
0.00001 0.0001 0.001 0.01 0.1 s 1
t
Fig. 7 Transient thermal resistance junction to case
008

NOTE: Fig. 2 to Fig. 6 shows typical values

© 2000 IXYS All rights reserved 2-3


DSEC 60-06B

60 1000 30
A TVJ= 100°C TVJ= 100°C
nC VR = 300V A VR = 300V
50 25
800 IF= 60A
Qr IF= 60A IRM
IF IF= 30A IF= 30A
40 IF= 15A 20 IF= 15A
TVJ=150°C 600
30 15
TVJ=100°C
400
20 10
TVJ=25°C
200
10 5

0 0 0
0 1 2 3 V 100 A/ms 1000 0 200 400 600 A/ ms 1000
800
VF -diF/dt -diF/dt
Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr Fig. 3 Peak reverse current IRM
versus -diF/dt versus -diF/dt

2.0 90 20 1.00
TVJ= 100°C TVJ= 100°C
VR = 300V IF = 30A
V µs
ns VFR tfr
V FR
1.5 trr 15 0.75
Kf 80 tfr

IF= 60A
1.0 IF= 30A 10 0.50
I RM IF= 15A

70
0.5 5 0.25
Qr

0.0 60 0 0.00
0 40 80 120 °C 160 0 200 400 600 ms 1000
800
A/ 0 200 400 600 A/ ms 1000
800
TVJ -diF/dt diF/dt

Fig. 4 Dynamic parameters Qr, IRM Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr
versus TVJ versus diF/dt

1
Constants for ZthJC calculation:
K/W
i Rthi (K/W) ti (s)
1 0.465 0.0052
0.1
2 0.179 0.0003
ZthJC
3 0.256 0.0396

0.01

DSEC 60-06B
0.001
0.00001 0.0001 0.001 0.01 0.1 s 1
t

Fig. 7 Transient thermal resistance junction to case


008

NOTE: Fig. 2 to Fig. 6 shows typical values

© 2000 IXYS All rights reserved 3-3

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