PD - 97562

PDP TRENCH IGBT IRG7IC28UPbF

Features Key Parameters
l Advanced Trench IGBT Technology
VCE min 600 V
l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 40A 1.70 V
circuits in PDP applications
TM)
IRP max @ TC= 25°C c 225 A
l Low VCE(on) and Energy per Pulse (E PULSE
TJ max 150 °C
for improved panel efficiency
l High repetitive peak current capability

l Lead Free package

C

E
G
C
G

E TO-220AB
n-channel Full-Pak

G C E
Gate Collector Emitter

Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.

Absolute Maximum Ratings

Parameter Max. Units
VGE Gate-to-Emitter Voltage ±30 V
IC @ TC = 25°C Continuous Collector Current, VGE @ 15V 25 A
IC @ TC = 100°C Continuous Collector, VGE @ 15V 12
IRP @ TC = 25°C Repetitive Peak Current c 225
PD @TC = 25°C Power Dissipation 40 W
PD @TC = 100°C Power Dissipation 16
Linear Derating Factor 0.32 W/°C
TJ Operating Junction and -40 to + 150 °C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw x x
10lb in (1.1N m) N
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Cased ––– 3.1 °C/W
RθJA Junction-to-Ambient d ––– 65

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVCES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, ICE = 1.0mA
V(BR)ECS Emitter-to-Collector Breakdown Voltage e 15 ––– ––– V VGE = 0V, ICE = 1.0A
∆ΒVCES/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.57 ––– V/°C Reference to 25°C, ICE = 1.0mA
––– 1.25 ––– VGE = 15V, ICE = 12A e
––– 1.42 ––– VGE = 15V, ICE = 24A e
1.70 1.95 V VGE = 15V, ICE = 40A e
= 70A e
VCE(on) Static Collector-to-Emitter Voltage
––– 1.96 ––– VGE = 15V, ICE
––– 2.97 ––– VGE = 15V, ICE = 160A e
––– 1.75 ––– VGE = 15V, ICE = 40A, TJ = 150°C e
VGE(th) Gate Threshold Voltage 2.2 ––– 4.7 V VCE = VGE, ICE = 250µA
∆VGE(th)/∆TJ Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C
ICES Collector-to-Emitter Leakage Current ––– 0.5 20 VCE = 600V, VGE = 0V
––– 30 ––– µA VCE = 600V, VGE = 0V, TJ = 100°C
––– 90 VCE = 600V, VGE = 0V, TJ = 125°C
––– 305 ––– VCE = 600V, VGE = 0V, TJ = 150°C
IGES Gate-to-Emitter Forward Leakage ––– ––– 100 nA VGE = 30V
Gate-to-Emitter Reverse Leakage ––– ––– -100 VGE = -30V
gfe Forward Transconductance ––– 55 ––– S VCE = 25V, ICE = 40A
Qg Total Gate Charge ––– 70 ––– nC VCE = 400V, IC = 40A, VGE = 15V e
Qgc Gate-to-Collector Charge ––– 25 –––
td(on) Turn-On delay time ––– 30 ––– IC = 40A, VCC = 400V
tr Rise time ––– 35 ––– ns RG = 22Ω, L=100µH
td(off) Turn-Off delay time ––– 260 ––– TJ = 25°C
tf Fall time ––– 145 –––
td(on) Turn-On delay time ––– 25 ––– IC = 40A, VCC = 400V
tr Rise time ––– 40 ––– ns RG = 22Ω, L=100µH
td(off) Turn-Off delay time ––– 280 ––– TJ = 150°C
tf Fall time ––– 320 –––
tst Shoot Through Blocking Time 100 ––– ––– ns VCC = 240V, VGE = 15V, RG= 5.1Ω
L = 220nH, C= 0.40µF, VGE = 15V
––– 770 –––
EPULSE Energy per Pulse µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
––– 930 –––
VCC = 240V, RG= 5.1Ω, TJ = 100°C
Class H1C (2000V)
Human Body Model
(Per JEDEC standard JESD22-A114)
ESD
Class M4 (425V)
Machine Model
(Per EIA/JEDEC standard EIA/JESD22-A115)
Cies Input Capacitance ––– 1880 ––– VGE = 0V
Coes Output Capacitance ––– 75 ––– pF VCE = 30V
Cres Reverse Transfer Capacitance ––– 45 ––– ƒ = 1.0MHz
LC Internal Collector Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance ––– 7.5 ––– from package
and center of die contact
Notes:
 Half sine wave with duty cycle <= 0.02, ton=1.0µsec.
‚ Rθ is measured at TJ of approximately 90°C.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.

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 IRG7IC28UPbF
200 200

175 175

150 150
VGE = 18V
VGE = 18V
125 125 VGE = 15V
VGE = 15V
ICE (A)

ICE (A)
VGE = 12V
100 VGE = 12V 100
VGE = 10V
VGE = 10V
75 75 VGE = 8.0V
VGE = 8.0V
VGE = 6.0V
VGE = 6.0V
50 50

25 25

0 0
0 2 4 6 8 10 0 2 4 6 8 10

VCE (V) VCE (V)

Fig 1. Typical Output Characteristics @ 25°C Fig 2. Typical Output Characteristics @ 75°C
200 200

175 175

150 150
VGE = 18V VGE = 18V
125 VGE = 15V 125 VGE = 15V
ICE (A)

ICE (A)

VGE = 12V VGE = 12V

100 100
VGE = 10V VGE = 10V
75 VGE = 8.0V 75 VGE = 8.0V
VGE = 6.0V VGE = 6.0V
50 50

25 25

0 0
0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14

VCE (V) VCE (V)

Fig 3. Typical Output Characteristics @ 125°C Fig 4. Typical Output Characteristics @ 150°C

200 2.0
IC = 20A
VCE, Voltage Collector-to-Emitter (V)
ICE, Collector-to-Emitter Current (A)

175
T J = 25°C
150 T J = 150°C 1.8

125

100 1.6 T J = 25°C

T J = 150°C
75

50 1.4

25

0 1.2
2 4 6 8 10 0 5 10 15 20
VGE, Gate-to-Emitter Voltage (V) VGE, Voltage Gate-to-Emitter (V)

Fig 5. Typical Transfer Characteristics Fig 6. VCE(ON) vs. Gate Voltage

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25 250

20 200

Repetitive Peak Current (A)

15 150
IC (A)

10 100

ton= 2µs
5 50 Duty cycle <= 0.05
Half Sine Wave

0 0
25 50 75 100 125 150 25 50 75 100 125 150
Case Temperature (°C)
T C (°C)
Fig 7. Maximum Collector Current vs. Case Temperature Fig 8. Typical Repetitive Peak Current vs. Case Temperature
950 950
V CC = 240V L = 220nH
900 900
L = 220nH C = 0.4µF
850 100°C 850
C = variable
Energy per Pulse (µJ)
Energy per Pulse (µJ)

800 800 100°C

750 750

700 700
650 25°C 650
25°C
600 600

550 550

500 500

450 450
160 170 180 190 200 210 220 230 240 200 205 210 215 220 225 230 235 240

IC, Peak Collector Current (A) VCE, Collector-to-Emitter Voltage (V)

Fig 9. Typical EPULSE vs. Collector Current Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage

1100 1000
V CC = 240V Tc = 25°C
C= 0.4µF Tj = 150°C
1000 L = 220nH
Single Pulse
t = 1µs half sine
900
Energy per Pulse (µJ)

100
10µsec
800 C= 0.3µF
100µsec
IC (A)

700
1msec
10
600
C= 0.2µF

500

400 1
20 40 60 80 100 120 140 160 1.0 10 100 1000
TJ, Temperature (ºC) VCE (V)

Fig 11. EPULSE vs. Temperature Fig 12. Forrward Bias Safe Operating Area
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 IRG7IC28UPbF
100000 16
VGS = 0V, f = 1 MHZ
IC = 40A
C ies = C ge + C gd, C ce SHORTED
14
C res = C gc

VGE, Gate-to-Emitter Voltage (V)

C oes = C ce + C gc
10000 12 VCES = 120V
VCES = 300V
Capacitance (pF)

10
Cies VCES = 400V
1000 8

100 4
Coes
2
Cres
10 0
0 100 200 300 400 500 0 10 20 30 40 50 60 70 80
VCE, Collector-toEmitter-Voltage(V) Q G, Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
6000

5000

EOFF
4000
Energy (µJ)

3000

2000
EON
1000

0
0 10 20 30 40 50 60 70 80 90

IC (A)
Fig. 15 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 250µH; VCE = 400V, RG = 22Ω; VGE = 15V
10

D = 0.50
Thermal Response ( Z thJC )

1
0.20
0.10
0.05
0.1 R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.02 τJ 0.19973 0.000268
τC
0.01 τJ τ
τ1 τ2
0.38341 0.002261
τ1 τ3 τ4
τ2 τ3 τ4 1.17794 0.154543
0.01 Ci= τi/Ri 1.36892 2.511
Ci i/Ri

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 16. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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A
RG C PULSE A
DRIVER

VCC PULSE B

B
Ipulse
RG
DUT
tST

Fig 16a. tst and EPULSE Test Circuit Fig 16b. tst Test Waveforms

VCE
Energy
L
IC Current VCC
DUT
0
1K

Fig 16c. EPULSE Test Waveforms Fig. 17 - Gate Charge Circuit (turn-off)

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TO-220AB Full-Pak Package Outline
Dimensions are shown in millimeters (inches)

TO-220AB Full-Pak Part Marking Information

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TO-220AB Full-Pak package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
The specifications set forth in this data sheet are the sole and
exclusive specifications applicable to the identified product,
and no specifications or features are implied whether by
industry custom, sampling or otherwise. We qualify our
products in accordance with our internal practices and
procedures, which by their nature do not include qualification
to all possible or even all widely used applications. Without
limitation, we have not qualified our product for medical use or Data and specifications subject to change without notice.
applications involving hi-reliability applications. Customers This product has been designed for the Industrial market.
are encouraged to and responsible for qualifying product to Qualification Standards can be found on IR’s Web site.
their own use and their own application environments,
especially where particular features are critical to operational
performance or safety. Please contact your IR representative if
you have specific design or use requirements or for further
information.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2010
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