Ee101 BJT 2 PDF

EE101: BJT circuits (Part 1)
M. B. Patil
mbpatil@ee.iitb.ac.in
www.ee.iitb.ac.in/~sequel
Department of Electrical Engineering

Indian Institute of Technology Bombay
M. B. Patil, IIT Bombay

BJT amplifier: basic operation
IC
VCC VCC
RC RC
IC
C Vo t
α IE 0 0.2 0.4 0.6 0.8
VBE
IB
VB VB
E IE
t

IC
VCC VCC
RC RC
IC
C Vo t
α IE 0 0.2 0.4 0.6 0.8
VBE
IB
VB VB
E IE
t
* In the active mode, IC changes exponentially with VBE .

IC
VCC VCC
RC RC
IC
C Vo t
α IE 0 0.2 0.4 0.6 0.8
VBE
IB
VB VB
E IE
t

* Vo = VCC − IC RC ⇒ the amplitude of Vo is simply IbC RC which can be made
much larger than the input voltage amplitude.

IC
VCC VCC
RC RC
IC
C Vo t
α IE 0 0.2 0.4 0.6 0.8
VBE
IB
VB VB
E IE
t

* Vo = VCC − IC RC ⇒ the amplitude of Vo is simply IbC RC which can be made
much larger than the input voltage amplitude.
* Note that both the input (VBE ) and output (Vo ) voltages have DC (“bias”)
components.
BJT amplifier biasing: why?
5
VCC
4
RC
Vo (Volts)
3
C Vo
RB 2
Vi B
1
E
0
0 1 2 3 4 5
Vi (Volts)
Consider a more realistic BJT amplifier circuit, with RB added to limit the base
current (and thus protect the transistor).

5
VCC
4
RC
Vo (Volts)
3
C Vo
RB 2
Vi B
1
E
0
0 1 2 3 4 5
Vi (Volts)
dVo
* The gain of the amplifier is given by .
dVi

5
VCC
4
RC
Vo (Volts)
3
C Vo
RB 2
Vi B
1
E
0
0 1 2 3 4 5
Vi (Volts)
dVo
dVi
* Since Vo is nearly constant for Vi < 0.7 V (due to cut-off) and Vi > 1.3 V (due
to saturation), the circuit will not work an an amplifier in this range.

5
VCC
4
RC
Vo (Volts)
3
C Vo
RB 2
Vi B
1
E
0
0 1 2 3 4 5
Vi (Volts)
dVo
dVi
* Since Vo is nearly constant for Vi < 0.7 V (due to cut-off) and Vi > 1.3 V (due
to saturation), the circuit will not work an an amplifier in this range.
* Further, to get a large swing in Vo without distortion, the DC bias of Vi should
be at the centre of the amplifying region, i.e., Vi ≈ 1 V .

AB C
5
VCC
4
RC
3
C Vo
Vo
RB 2
Vi B
1
E
0
0 1 2 3 4 5
Vi
0.80 1.05 1.35

A B C
0.78 1.03 1.33
0.76 1.01 1.31

Vi
0.74 0.99 1.29
0.72 0.97 1.27
0.70 0.95 1.25

5.00 3.40 0.65
4.90 3.20 0.55
4.80 3.00 0.45

Vo
4.70 2.80 0.35
4.60 2.60 0.25
4.50 2.40 0.15

0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1
t (msec) t (msec) t (msec)
(SEQUEL file: ee101 bjt amp1.sqproj) M. B. Patil, IIT Bombay

BJT amplifier
5
VCC
4
RC
Vo (Volts)
3
C Vo
RB 2
Vi B
1
E
0
0 1 2 3 4 5
Vi (Volts)
* The key challenges in realizing this amplifier in practice are

BJT amplifier
5
VCC
4
RC
Vo (Volts)
3
C Vo
RB 2
Vi B
1
E
0
0 1 2 3 4 5
Vi (Volts)

- adjusting the input DC bias to ensure that the BJT remains in the linear
(active) region with a certain bias value of IC .

BJT amplifier
5
VCC
4
RC
Vo (Volts)
3
C Vo
RB 2
Vi B
1
E
0
0 1 2 3 4 5
Vi (Volts)

- mixing the input DC bias with the signal voltage.

BJT amplifier
5
VCC
4
RC
Vo (Volts)
3
C Vo
RB 2
Vi B
1
E
0
0 1 2 3 4 5
Vi (Volts)

- mixing the input DC bias with the signal voltage.
* The first issue is addressed by using a suitable biasing scheme, and the second
by using “coupling” capacitors.

BJT amplifier: a simple biasing scheme
15 V VCC
RB RC
1k
“Biasing” an amplifier ⇒ selection of component values for a certain DC value of IC

(i.e., when no signal is applied).

15 V VCC
RB RC
1k

Equivalently, we may bias an amplifier for a certain DC value of VCE , since IC and
VCE are related: VCE + IC RC = VCC .

15 V VCC
RB RC
1k

As an example, for RC = 1 k, β = 100, let us calculate RB which will give

IC = 3.3 mA, assuming the BJT to be operating in the active mode.

15 V VCC
RB RC
1k


IC 3.3 mA VCC − VBE
IB = = = 33 µA =
β 100 RB

15 V VCC
RB RC
1k


IC 3.3 mA VCC − VBE
IB = = = 33 µA =
β 100 RB
14.3 V
→ RB = = 430 kΩ .
33 µA

BJT amplifier: a simple biasing scheme (continued)
15 V VCC
RB RC
1k
With RB = 430 k, we expect IC = 3.3 mA, assuming β = 100.

15 V VCC
RB RC
1k
However, in practice, there is a substantial variation in the β value (even for the same
transistor type). The manufacturer may specify the nominal value of β as 100, but the
actual value may be 150, for example.

15 V VCC
RB RC
1k
With β = 150, the actual IC is,

VCC − VBE (15 − 0.7) V
IC = β × = 150 × = 5 mA ,
RB 430 k
which is significantly different than the intended value, 3.3 mA.

15 V VCC
RB RC
1k
With β = 150, the actual IC is,

VCC − VBE (15 − 0.7) V
IC = β × = 150 × = 5 mA ,
RB 430 k
which is significantly different than the intended value, 3.3 mA.
⇒ need a biasing scheme which is not so sensitive to β.

BJT amplifier: improved biasing scheme
10 V VCC
RC
R1 3.6 k
10 k IC
IB
IE
R2
RE
2.2 k
1k
10 V VCC
RC RC
R1 3.6 k
10 k IC IC
R1
IB IB
VCC
IE IE
R2 VCC R2
RE RE
2.2 k
1k
10 V VCC
RC RC RC
R1 3.6 k
10 k IC IC IC
R1
IB IB RTh IB
VCC VCC
IE IE IE
R2 VCC R2 VTh
RE RE RE
2.2 k
1k

10 V VCC
RC RC RC
R1 3.6 k
10 k IC IC IC
R1
IB IB RTh IB
VCC VCC
IE IE IE
R2 VCC R2 VTh
RE RE RE
2.2 k
1k
R2 2.2 k
VTh = VCC = × 10 V = 1.8 V , RTh = R1 k R2 = 1.8 k
R1 + R2 10 k + 2.2 k

10 V VCC
RC RC RC
R1 3.6 k
10 k IC IC IC
R1
IB IB RTh IB
VCC VCC
IE IE IE
R2 VCC R2 VTh
RE RE RE
2.2 k
1k
R2 2.2 k
R1 + R2 10 k + 2.2 k
Assuming the BJT to be in the active mode,
KCL: VTh = RTh IB + VBE + RE IE = RTh IB + VBE + (β + 1) IB RE

10 V VCC
RC RC RC
R1 3.6 k
10 k IC IC IC
R1
IB IB RTh IB
VCC VCC
IE IE IE
R2 VCC R2 VTh
RE RE RE
2.2 k
1k
R2 2.2 k
R1 + R2 10 k + 2.2 k
VTh − VBE β (VTh − VBE )
→ IB = , IC = β IB = .
RTh + (β + 1) RE RTh + (β + 1) RE

10 V VCC
RC RC RC
R1 3.6 k
10 k IC IC IC
R1
IB IB RTh IB
VCC VCC
IE IE IE
R2 VCC R2 VTh
RE RE RE
2.2 k
1k
R2 2.2 k
R1 + R2 10 k + 2.2 k
→ IB = , IC = β IB = .
RTh + (β + 1) RE RTh + (β + 1) RE
For β = 100, IC =1.07 mA.

10 V VCC
RC RC RC
R1 3.6 k
10 k IC IC IC
R1
IB IB RTh IB
VCC VCC
IE IE IE
R2 VCC R2 VTh
RE RE RE
2.2 k
1k
R2 2.2 k
R1 + R2 10 k + 2.2 k
→ IB = , IC = β IB = .
RTh + (β + 1) RE RTh + (β + 1) RE
For β = 100, IC =1.07 mA.
For β = 200, IC =1.085 mA.

BJT amplifier: improved biasing scheme (continued)
10 V VCC
RC
R1 3.6 k
10 k IC
6V
1.8 V
IB
1.1 V
IE
R2
RE
2.2 k 1k
With IC = 1.1 mA, the various DC (“bias”) voltages are,

10 V VCC
RC
R1 3.6 k
10 k IC
6V
1.8 V
IB
1.1 V
IE
R2
RE
2.2 k 1k
VE = IE RE ≈ 1.1 mA × 1 k = 1.1 V ,

10 V VCC
RC
R1 3.6 k
10 k IC
6V
1.8 V
IB
1.1 V
IE
R2
RE
2.2 k 1k
VE = IE RE ≈ 1.1 mA × 1 k = 1.1 V ,
VB = VE + VBE ≈ 1.1 V + 0.7 V = 1.8 V ,

10 V VCC
RC
R1 3.6 k
10 k IC
6V
1.8 V
IB
1.1 V
IE
R2
RE
2.2 k 1k
VE = IE RE ≈ 1.1 mA × 1 k = 1.1 V ,
VB = VE + VBE ≈ 1.1 V + 0.7 V = 1.8 V ,
VC = VCC − IC RC = 10 V − 1.1 mA × 3.6 k ≈ 6 V ,

10 V VCC
RC
R1 3.6 k
10 k IC
6V
1.8 V
IB
1.1 V
IE
R2
RE
2.2 k 1k
VE = IE RE ≈ 1.1 mA × 1 k = 1.1 V ,
VB = VE + VBE ≈ 1.1 V + 0.7 V = 1.8 V ,
VC = VCC − IC RC = 10 V − 1.1 mA × 3.6 k ≈ 6 V ,
VCE = VC − VE = 6 − 1.1 = 4.9 V .

10 V VCC
RC
R1 3.6 k
10 k IC
IB
IE
R2
RE
2.2 k 1k
A quick estimate of the bias values can be obtained by ignoring IB (which is fair if β is
large). In that case,

10 V VCC
RC
R1 3.6 k
10 k IC
IB
IE
R2
RE
2.2 k 1k
R2 2.2 k
VB = VCC = × 10 V = 1.8 V .
R1 + R2 10 k + 2.2 k

10 V VCC
RC
R1 3.6 k
10 k IC
IB
IE
R2
RE
2.2 k 1k
R2 2.2 k
VB = VCC = × 10 V = 1.8 V .
R1 + R2 10 k + 2.2 k
VE = VB − VBE ≈ 1.8 V − 0.7 V = 1.1 V .

10 V VCC
RC
R1 3.6 k
10 k IC
IB
IE
R2
RE
2.2 k 1k
R2 2.2 k
VB = VCC = × 10 V = 1.8 V .
R1 + R2 10 k + 2.2 k
VE = VB − VBE ≈ 1.8 V − 0.7 V = 1.1 V .
VE 1.1 V
IE = = = 1.1 mA.
RE 1k

10 V VCC
RC
R1 3.6 k
10 k IC
IB
IE
R2
RE
2.2 k 1k
R2 2.2 k
VB = VCC = × 10 V = 1.8 V .
R1 + R2 10 k + 2.2 k
VE = VB − VBE ≈ 1.8 V − 0.7 V = 1.1 V .
VE 1.1 V
IE = = = 1.1 mA.
RE 1k
IC = α IE ≈ IE = 1.1 mA.

10 V VCC
RC
R1 3.6 k
10 k IC
IB
IE
R2
RE
2.2 k 1k
R2 2.2 k
VB = VCC = × 10 V = 1.8 V .
R1 + R2 10 k + 2.2 k
VE = VB − VBE ≈ 1.8 V − 0.7 V = 1.1 V .
VE 1.1 V
IE = = = 1.1 mA.
RE 1k
IC = α IE ≈ IE = 1.1 mA.
VCE = VCC − IC RC − IE RE = 10 V − (3.6 k × 1.1 mA) − (1 k × 1.1 mA) ≈ 5 V .

Adding signal to bias
VCC
RC
R1
vB
R2
RE
VCC
RC
R1
vB
R2
RE
* As we have seen earlier, the input signal vs (t) = V̂ sin ωt (for example) needs to
be mixed with the desired bias value VB so that the net voltage at the base is
vB (t) = VB + V̂ sin ωt.
VCC
RC
R1
vB
CB
vs R2
RE
* This can be achieved by using a coupling capacitor CB .
VCC
RC
R1
vB
CB
vs R2
RE
* This can be achieved by using a coupling capacitor CB .
* Let us take a simple circuit to illustrate how a coupling capacitor works.

Coupling capacitor: example
vC
R2
A
i1 i2
C i3
vs (t) R1 V0 (DC)
Let vA be the instantaneous node voltage at A. KCL gives,

dvC vA vA − V0
−i1 + i3 + i2 = 0 → −C + + = 0.
dt R1 R2

vC
R2
A
i1 i2
C i3
vs (t) R1 V0 (DC)

dvC vA vA − V0
−i1 + i3 + i2 = 0 → −C + + = 0.
dt R1 R2
d(vs − vA ) vA vA − V0
−C + + = 0. (1)
dt R1 R2

vC
R2
A
i1 i2
C i3
vs (t) R1 V0 (DC)

dvC vA vA − V0
−i1 + i3 + i2 = 0 → −C + + = 0.
dt R1 R2
−C + + = 0. (1)
dt R1 R2
Let vA = VA + va (t), where VA = constant (DC).

vC
R2
A
i1 i2
C i3
vs (t) R1 V0 (DC)

dvC vA vA − V0
−i1 + i3 + i2 = 0 → −C + + = 0.
dt R1 R2
−C + + = 0. (1)
dt R1 R2
In sinusoidal steady state, Eq. (1) can be split into two equations, one with only DC
terms and the other with only sinusoidal terms.

vC
R2
A
i1 i2
C i3
vs (t) R1 V0 (DC)

dvC vA vA − V0
−i1 + i3 + i2 = 0 → −C + + = 0.
dt R1 R2
−C + + = 0. (1)
dt R1 R2
In sinusoidal steady state, Eq. (1) can be split into two equations, one with only DC
terms and the other with only sinusoidal terms.
d(−VA ) VA VA − V0 d(vs − va ) va va
−C + + = 0, and −C + + = 0.
dt R1 R2 dt R1 R2

Coupling capacitor: example (continued)
dVA
Since = 0 (VA being constant), we get
vC dt
R2
A
VA VA − V0
i1 i2 + = 0, and
C i3 R1 R2
vs (t) R1 V0 (DC)
1 1 d(vs − va )

va + =C .
R1 R2 dt

dVA
vC dt
R2
A
VA VA − V0
i1 i2 + = 0, and
C i3 R1 R2
vs (t) R1 V0 (DC)
1 1 d(vs − va )

va + =C .
R1 R2 dt
In other words, the original circuit can be thought of as

vC
A R2 A R2 A R2
i1 i2
C i3 C
vs (t) R1 V0 R1 V0 AND vs (t) R1
(DC circuit) (AC circuit)

dVA
vC dt
R2
A
VA VA − V0
i1 i2 + = 0, and
C i3 R1 R2
vs (t) R1 V0 (DC)
1 1 d(vs − va )

va + =C .
R1 R2 dt
In other words, the original circuit can be thought of as

vC
A R2 A R2 A R2
i1 i2
C i3 C
vs (t) R1 V0 R1 V0 AND vs (t) R1
(DC circuit) (AC circuit)
We can get VA from the first circuit, va (t) from the second, and then combine them
to get the actual vA (t): vA (t) = VA + va (t)
Capacitors in an amplifier circuit
* Split the original circuit into two circuits:

- DC circuit: replace each capacitor with an open circuit, each AC voltage
source with a short circuit.
- AC circuit: replace each DC voltage source with a short circuit.


* Analyse the two circuits separately.


* Combine the results of the two circuits to obtain the net instantaneous voltages
and currents.


* Combine the results of the two circuits to obtain the net instantaneous voltages
and currents.
* The procedure described above also applies to a nonlinear circuit such as a BJT
amplifier IF the “small-signal approximation” is satisfied. We will soon see what
that means.

Common-emitter amplifier
coupling
RC capacitor
R1
coupling
capacitor
CC
VCC
CB
RL
vs R2 load
RE
resistor
CE
bypass
capacitor
coupling
RC capacitor RC
R1 R1
coupling
capacitor
CC
VCC
VCC
CB
RL
vs R2 load R2
RE RE
resistor
CE
bypass DC circuit
capacitor
coupling
RC RC RC
capacitor
R1 R1 R1
coupling
capacitor
CC CC
VCC AND
VCC
CB CB
RL
RL
vs R2 load R2 vs R2
RE RE RE
resistor
CE CE
bypass DC circuit AC circuit

capacitor
coupling
RC RC RC
capacitor
R1 R1 R1
coupling
capacitor
CC CC
VCC AND
VCC
CB CB
RL
RL
vs R2 load R2 vs R2
RE RE RE
resistor
CE CE

capacitor
* The coupling capacitors ensure that the singal source and the load resistor do
not affect the DC bias of the amplifier. (We will see the purpose of CE a little
later.)
coupling
RC RC RC
capacitor
R1 R1 R1
coupling
capacitor
CC CC
VCC AND
VCC
CB CB
RL
RL
vs R2 load R2 vs R2
RE RE RE
resistor
CE CE

capacitor
* The coupling capacitors ensure that the singal source and the load resistor do
not affect the DC bias of the amplifier. (We will see the purpose of CE a little
later.)
* This enables us to bias the amplifier without worrying about what load it is
going to drive.

Common-emitter amplifier: AC circuit
RC
R1
CC
CB
RL
vs R2
RE
CE
RC
R1
CC
CB
RL
vs R2
RE
CE
* The coupling and bypass capacitors are “large” (typically, a few µF ), and at
frequencies of interest, their impedance is small.
For example, for C = 10 µF , f = 1 kHz,
1
ZC = = 16 Ω,
2π × 103 × 10 × 10−6
which is much smaller than typical values of R1 , R2 , RC , RE (a few kΩ).
⇒ CB , CC , CE can be replaced by short circuits at the frequencies of interest.
RC RC
R1 R1
CC
CB
RL RL
vs R2 R2
RE vs
CE
1
ZC = = 16 Ω,
2π × 103 × 10 × 10−6
RC RC
R1 R1
CC
CB
RL RL
vs R2 R2
RE vs
CE
1
ZC = = 16 Ω,
2π × 103 × 10 × 10−6
* The circuit can be re-drawn in a more friendly format.
RC RC
R1 R1
CC
CB
RL RL RC RL
vs R2 R2 vs R1 R2
RE vs
CE
1
ZC = = 16 Ω,
2π × 103 × 10 × 10−6
RC RC
R1 R1
CC
CB
RL RL RC RL
vs R2 R2 vs R1 R2
RE vs
CE
1
ZC = = 16 Ω,
2π × 103 × 10 × 10−6
* We now need to figure out the AC description of a BJT.

C
iC 1.1 Vm = 10 mV
iB Vm = 5 mV
B Vm = 2 mV
iC (mA)
0.9
vBE iE
E
0.7
vBE (t) = V0 + Vm sin ωt
V0 = 0.65 V, f = 1 kHz 0.5

0 0.2 0.4 0.6 0.8 1
t (msec)

C
iC 1.1 Vm = 10 mV
iB Vm = 5 mV
B Vm = 2 mV
iC (mA)
0.9
vBE iE
E
0.7
V0 = 0.65 V, f = 1 kHz 0.5

0 0.2 0.4 0.6 0.8 1
t (msec)
* As the vBE amplitude increases, the shape of iC (t) deviates from a sinusoid
→ distortion.

C
iC 1.1 Vm = 10 mV
iB Vm = 5 mV
B Vm = 2 mV
iC (mA)
0.9
vBE iE
E
0.7
V0 = 0.65 V, f = 1 kHz 0.5

0 0.2 0.4 0.6 0.8 1
t (msec)
* As the vBE amplitude increases, the shape of iC (t) deviates from a sinusoid
→ distortion.
* If vbe (t), i.e., the time-varying part of vBE , is kept small, iC varies linearly
with vBE . How small? Let us look at this in more detail.

BJT: small-signal model
iC
C
α iE
iC
iB iB
B
vBE iE vBE
E iE
Let vBE (t) = VBE + vbe (t) (bias+signal), and iC (t) = IC + ic (t).

iC
C
α iE
iC
iB iB
B
vBE iE vBE
E iE
vBE (t)

Assuming active mode, iC (t) = α iE (t) = α IES exp −1 .
VT

iC
C
α iE
iC
iB iB
B
vBE iE vBE
E iE
vBE (t)

VT
vBE (t)

Since the B-E junction is forward-biased, exp 1, and we get
VT
vBE (t) VBE + vbe (t)

iC (t) = α IES exp = α IES exp
VT VT
vbe (t)

VBE
= α IES exp × exp
VT VT

iC
C
α iE
iC
iB iB
B
vBE iE vBE
E iE
vBE (t)

VT
vBE (t)

Since the B-E junction is forward-biased, exp 1, and we get
VT
vBE (t) VBE + vbe (t)

iC (t) = α IES exp = α IES exp
VT VT
vbe (t)

VBE
= α IES exp × exp
VT VT
If vbe (t) = 0, iC (t) = IC (the bias value of iC ), i.e.,
vbe (t)

VBE
IC = α IES exp ⇒ iC (t) = IC exp .
VT VT
iC
C
α iE
iC
iB iB
B
vBE iE vBE
E iE
vbe (t)

1 + x + x 2 + · · · , x = vbe (t)/VT .

iC (t) = IC exp = IC
VT

iC
C
α iE
iC
iB iB
B
vBE iE vBE
E iE
vbe (t)

1 + x + x 2 + · · · , x = vbe (t)/VT .

VT
If x is small, i.e., if the amplitude of vbe (t) is small compared to the thermal voltage VT , we get
vbe (t)

iC (t) = IC 1 + .
VT

iC
C
α iE
iC
iB iB
B
vBE iE vBE
E iE
vbe (t)

1 + x + x 2 + · · · , x = vbe (t)/VT .

VT
vbe (t)

iC (t) = IC 1 + .
VT
We can now see that, for |vbe (t)| VT , the relationship between iC (t) and vbe (t) is linear, as we
have observed previously.

iC
C
α iE
iC
iB iB
B
vBE iE vBE
E iE
vbe (t)

1 + x + x 2 + · · · , x = vbe (t)/VT .

VT
vbe (t)

iC (t) = IC 1 + .
VT
We can now see that, for |vbe (t)| VT , the relationship between iC (t) and vbe (t) is linear, as we
have observed previously.
vbe (t)

IC
iC (t) = IC + ic (t) = IC 1 + ⇒ ic (t) = vbe (t)
VT VT

iC
C
α iE
iC B C
iB iB
B
rπ
gm vbe
vBE iE vBE
E iE E
IC
The relationship, ic (t) = vbe (t) can be represented by a VCCS, ic (t) = gm vbe (t),
VT
where gm = IC /VT .

iC
C
α iE
iC B C
iB iB
B
rπ
gm vbe
vBE iE vBE
E iE E
IC
VT
where gm = IC /VT .
For the base current, we have,
1
iB (t) = IB + ib (t) = [IC + ic (t)]
β
1 1
→ ib (t) = ic (t) = gm vbe (t) → vbe (t) = (β/gm ) ib (t).
β β

iC
C
α iE
iC B C
iB iB
B
rπ
gm vbe
vBE iE vBE
E iE E
IC
VT
where gm = IC /VT .
1
iB (t) = IB + ib (t) = [IC + ic (t)]
β
1 1
β β
The above relationship is represented by a resistance, rπ = β/gm , connected between
B and E.

iC
C
α iE
iC B C
iB iB
B
rπ
gm vbe
vBE iE vBE
E iE E
IC
VT
where gm = IC /VT .
1
iB (t) = IB + ib (t) = [IC + ic (t)]
β
1 1
β β
The above relationship is represented by a resistance, rπ = β/gm , connected between
B and E.
The resulting model is called the π-model for small-signal description of a BJT.

iC
C
α iE
iC B C
iB iB
B
rπ
gm vbe
vBE iE vBE
E iE E
* The transconductance gm depends on the biasing of the BJT, since

gm = IC /VT . For IC = 1 mA, VT ≈ 25 mV (room temperature),
gm = 1 mA/25 mV = 40 mf.

iC
C
α iE
iC B C
iB iB
B
rπ
gm vbe
vBE iE vBE
E iE E

gm = 1 mA/25 mV = 40 mf.
* rπ also depends on IC , since rπ = β/gm = β VT /IC . For IC = 1 mA,
VT ≈ 25 mV , β = 100, rπ = 2.5 kΩ.

iC
C
α iE
iC B C
iB iB
B
rπ
gm vbe
vBE iE vBE
E iE E

gm = 1 mA/25 mV = 40 mf.
* rπ also depends on IC , since rπ = β/gm = β VT /IC . For IC = 1 mA,
VT ≈ 25 mV , β = 100, rπ = 2.5 kΩ.
* Note that the small-signal model is valid only for small vbe (compared to VT ), as
we have seen earlier.

C
iC B C
iB
B rπ
gm vbe
vBE iE
E E
* In the above model, note that ic is independent of vce .

1
C
iC B C
IC (mA)
iB
B rπ
gm vbe
vBE iE
E E
0
0 1 2 3 4 5
VCE (V)

* In practice, ic does depend on vce because of the Early effect, and
dIC
≈ constant = 1/ro , where ro is called the output resistance.
dVCE
1
C
iC B C
IC (mA)
iB
B rπ
gm vbe
vBE iE
E E
0
0 1 2 3 4 5
VCE (V)

dIC
dVCE
* A more accurate model includes ro as well.
1
C
iC B C B C
IC (mA)
iB
B rπ rπ ro
gm vbe gm vbe
vBE iE
E E E
0
0 1 2 3 4 5
VCE (V)

dIC
dVCE
* A more accurate model includes ro as well.

C rb Cµ
iC B C
iB
B rπ ro
Cπ
gm vbe
iE
E E
* A few other components are required to make the small-signal model complete:
rb : base spreading resistance
Cπ : base charging capacitance + B-E junction capacitance
Cµ : B-C junction capacitance

C rb Cµ
iC B C
iB
B rπ ro
Cπ
gm vbe
iE
E E
* The capacitances are typically in the pF range. At low frequencies, 1/ωC is
large, and the capacitances can be replaced by open circuits.

C rb Cµ
iC B C
iB
B rπ ro
Cπ
gm vbe
iE
E E
* The capacitances are typically in the pF range. At low frequencies, 1/ωC is
large, and the capacitances can be replaced by open circuits.
* Note that the small-signal models we have described are valid in the active
region only.

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EE101: BJT circuits (Part 1)

Department of Electrical Engineering

M. B. Patil, IIT Bombay

M. B. Patil, IIT Bombay

* In the active mode, IC changes exponentially with VBE .

M. B. Patil, IIT Bombay

* In the active mode, IC changes exponentially with VBE .

M. B. Patil, IIT Bombay

* In the active mode, IC changes exponentially with VBE .

M. B. Patil, IIT Bombay

M. B. Patil, IIT Bombay

M. B. Patil, IIT Bombay

M. B. Patil, IIT Bombay

0.80 1.05 1.35

0.76 1.01 1.31

0.74 0.99 1.29

0.72 0.97 1.27

0.70 0.95 1.25

4.90 3.20 0.55

4.80 3.00 0.45

4.70 2.80 0.35

4.60 2.60 0.25

4.50 2.40 0.15

(SEQUEL file: ee101 bjt amp1.sqproj) M. B. Patil, IIT Bombay

* The key challenges in realizing this amplifier in practice are

M. B. Patil, IIT Bombay

* The key challenges in realizing this amplifier in practice are

M. B. Patil, IIT Bombay

* The key challenges in realizing this amplifier in practice are

M. B. Patil, IIT Bombay

* The key challenges in realizing this amplifier in practice are

M. B. Patil, IIT Bombay

“Biasing” an amplifier ⇒ selection of component values for a certain DC value of IC

M. B. Patil, IIT Bombay

“Biasing” an amplifier ⇒ selection of component values for a certain DC value of IC

M. B. Patil, IIT Bombay

“Biasing” an amplifier ⇒ selection of component values for a certain DC value of IC

As an example, for RC = 1 k, β = 100, let us calculate RB which will give

M. B. Patil, IIT Bombay

“Biasing” an amplifier ⇒ selection of component values for a certain DC value of IC

As an example, for RC = 1 k, β = 100, let us calculate RB which will give

M. B. Patil, IIT Bombay

“Biasing” an amplifier ⇒ selection of component values for a certain DC value of IC

As an example, for RC = 1 k, β = 100, let us calculate RB which will give

M. B. Patil, IIT Bombay

With RB = 430 k, we expect IC = 3.3 mA, assuming β = 100.

M. B. Patil, IIT Bombay

With RB = 430 k, we expect IC = 3.3 mA, assuming β = 100.

M. B. Patil, IIT Bombay

With RB = 430 k, we expect IC = 3.3 mA, assuming β = 100.

With β = 150, the actual IC is,

M. B. Patil, IIT Bombay

With RB = 430 k, we expect IC = 3.3 mA, assuming β = 100.

With β = 150, the actual IC is,

⇒ need a biasing scheme which is not so sensitive to β.

M. B. Patil, IIT Bombay

M. B. Patil, IIT Bombay

M. B. Patil, IIT Bombay

M. B. Patil, IIT Bombay

M. B. Patil, IIT Bombay

M. B. Patil, IIT Bombay

M. B. Patil, IIT Bombay

With IC = 1.1 mA, the various DC (“bias”) voltages are,