Recent Developments in Nonlinear Network Design:

Overview of Integrated Nonlinear Microwave and

Millimeter-Wave Circuits Workshop

Adalbert Beyer
Gerhard-Mercator-University Duisburg, Department of Electrical Engineering and Communications,
Bismarckstrasse 81, D-47057 Duisburg, Germany; e-mail: a.beyer@uni-duisburg.de
Received 15 June 2001; Accepted 19 October 2001

ABSTRACT: In the 1960s and 1970s the design of microwave networks containing nonlinear
elements often consisted of trial and error routines. The required circuit performance was
then achieved iteratively. With the knowledge of the physical property of the materials at
microwave frequencies and its influence on active devices used in microwave networks, it is
possible to reduce the time required to analyze new nonlinear circuits for microwave purposes.
Advanced tools are necessary, which can analyze the network very quickly for a short
development time. The basic requirements are a fast and accurate nonlinear measurement
system and descriptions that match the real counterpart. This article shows the development
of the nonlinear microwave network design for the last decade as a reflection of the workshop
entitled Integrated Nonlinear Microwave and Millimeterwave Circuits. © 2002 Wiley Period-
icals, Inc. Int J RF and Microwave CAE 12: 388 – 417, 2002. Published online in Wiley InterScience
(www.interscience.wiley.com). DOI 10.1002/mmce.10041

Keywords: nonlinear network design; nonlinear models for active devices; electrothermal design;
microwave mixers; nonlinear network measurement systems

I. INTRODUCTION ment of nonlinear network design, in order to attain

Network design together with field theory form the
foundation for all of the microwave and millimeter-
wave circuits that render possible the great advances
achieved by these fields. It is important to mention,
however, that network theory is only a part of theory
of electromagnetism in general. During the last de-
cades, the network formulation and solution of many
microwave and millimeter-wave field problems has
progressed so rapidly that it should be considered as
one of the most important parts of microwave theory
and techniques.
Increasing demand for wireless and mobile com-
munications systems [1, 2] has stimulated endeavors
in the area of network theory, especially the develop-
Correspondence to: e-mail: a.beyer@uni-duisburg.de
small-size local oscillators, mixers, and power ampli-
fiers operating with high quality technical parameters
at the frequency bands that are required. Enormous
advances within the monolithic integration techniques
in conjunction with the field effect transistor (FET)
and heterojunction bipolar transistor (HBT) technol-
ogies allow the fabrication of all transceiver elements
on the same chip, hence offering an overall reduction
in system chip size.
At the end of the 1980s the Microwave Society
was under tremendous pressure because of fulfilling
the requirements of all microwave systems, especially
regarding the right price [3–5]. At that time, the
research and development had arrived at the threshold
of a new age: new qualities were looked for in the
capabilities of the nonlinear network design, fabrica-
tion, and measurement procedures. Several institutes
and meetings discussed the possibilities for further

© 2002 Wiley Periodicals, Inc.

388

developments in performance, physical, and reliabil-
ity characteristics. In Germany the Gerhard-Mercator-
University Duisburg created an international platform
on which designers and developers could present their
viewpoints and ideas. This was a biennial workshop
entitled Integrated Nonlinear Microwave and Milli-
meterwave Circuits (INMMC), and it took place be-
tween 1990 and 1998.
The goal of this contribution is to outline the scope
of the technical review of the workshop mentioned
above. In order to show the topics treated in talks and
articles of the workshop, Section II presents a general
overview for the introduction of several techniques
and nonlinear circuit types. In Sections III–V, selected
articles dealing with the modeling of active micro-
wave devices, mixers, and multipliers and with non-
linear measurement techniques are intensively dis-
cussed.
II. OVERVIEW OF NONLINEAR
NETWORK DESIGN
In general, one of the subsets of microwave and
millimeter-wave theory and techniques forms network
theory, and it shows two main features that combine
to distinguish it from the more general discipline:
1. microwave network theory applies to structures
for which the dimensions are on the order of the
wavelength and
2. the primary applications are to problems involv-
ing guided waves and passive and active net-
work elements.
A very important corollary aspect is that the mi-
crowave network can be subdivided in terms of ap-
propriate transmission lines to represent guiding re-
gions and of lumped or distributed network elements
to represent the effects of geometrical or electrical
discontinuities. Furthermore, these transmission lines
can show dispersive behavior and the active network
elements are regularly nonlinear, having electrother-
mal interactions, so that the design or even the anal-
ysis of these networks is quite pretentious [6, 7].
In this section, the authors intention is to give a
short insight into several aspects of nonlinear network
design, which were presented during the workshop.
A. Nonlinear Microwave and Millimeter-
Wave Network Analysis
Three principal possibilities have been established for
analyzing nonlinear networks:
Overview of INMMC Workshop 389
1. time-domain methods,
2. frequency-domain procedures, and
3. mixed-domain techniques,
where classical network or field formulations may be
applied for the description of the problems.
Time-Domain Methods. These methods treat the net-
work entirely in the time domain, which means the
integration of the nonlinear differential equation will
be performed in this domain. Time-domain circuit
analysis has become a fundamental part of digital and
analog network design. There are two different ways
for describing the nonlinear networks: local descrip-
tion and global solution. The local description is
based on an interactive updating of the local nonlin-
earities, which are distributed within the structure
under study, using a mesh structure. A global solution
is yielded, if the nonlinear integrodifferential equa-
tions of the network are solved directly. At first, these
equations are discretized and thereafter numerically
integrated. A very robust and efficient example is the
SPICE tool using the associate discrete model.
Early contributors to the workshop were Sobhy et
al. [8]; until 1990, they described a number of impor-
tant developments in the area of global solutions like
parallel processing, real time simulation, multiport
analysis, and chaotic behavior in the simulation of
microwave networks using this technique. Other au-
thors also presented new aspects on this topic [9 –11].
Frequency-Domain Procedures. The mathematical
foundations of these techniques are quite old; never-
theless, the last two decades and the development of
the computer capabilities associated with it rendered
possible their powerful inclusion in nonlinear network
design. In 1990 Rizzoli and colleagues [12] presented
a review of available methods for the analysis and
design of microwave oscillators using frequency-do-
main techniques. Several other important contribu-
tions to this topic were also revealed [13–16].
Mixed-Domain Techniques. These techniques for
nonlinear network design and mixer design were es-
tablished. Several kinds of these techniques were fur-
ther developed, enabling the treatment of multitone
excitation and reducing the necessary time consump-
tion. Especially, the sophisticated harmonic balance
(HB) method became extremely popular. These pro-
cedures subdivide the circuit into linear and nonlinear
parts, whereby the first part is the frequency and the
second is the time domain [17–19].
Additionally, numerous contributions dealt with
the problem of nonlinear network analysis. For in-
390 Beyer
stance, a full wave approach [20], the chaotic phe-
nomena in microwave networks [21], a rigorous
method for determining the stability of any N-node
network [22], an analytic approach for optimum non-
linear circuits [23], and multiple space mapping to
align electromagnetic (EM) and empirical models of
coupled interconnects [24] were intensively investi-
gated.
B. Modeling of Nonlinear Devices
The quality of the tools used for nonlinear network
design is strongly dependent on the nonlinear device
models, which are embedded in these simulators [3,
4]. The consequence of this is that in the past decades
enormous efforts were put forth to create new and
powerful models. There are now numerous well-es-
tablished device descriptions, which may be subdi-
vided into three main classes:
1. physics-based models,
2. small-signal equivalent circuit models, and
3. black-box modeling techniques.
Physics-Based Models. Physics-based models try to
describe the active devices in such a way that the
material, geometrical, and carrier transport properties
should be jointly considered. These models need a
comprehensive analytical and numerical treatment
and a high CPU and memory intensity. Because of the
fast improvements in computer capabilities, these
models have became more and more compatible with
simulation tools.
As the first contribution of this workshop series, in
1990 Trew reviewed recent physics-based models
suitable for use in comprehensive microwave com-
puter-aided design (CAD) simulators [25]. In 1994
Snowden summarized the relative merits of physic-
based and nonlinear equivalent models extended to
thermal effects [26]. During the next meetings of the
workshop, new nonlinear models for power junction
transistors were introduced [27, 28].
Small-Signal Equivalent Circuit Models. Small-sig-
nal equivalent circuit models for the description of
nonlinear devices became well naturalized and used in
a number of CAD tools. These models are mostly
developed by fitting the network parameter values to
the data of a small-signal S-parameter measurement at
various bias-point values. During the workshop, sev-
eral new developments were observed for the models
used and the devices investigated [29 – 46].
Black-Box Modeling Techniques. The black-box
modeling techniques use the methods of system the-
ory, in which there is a search for the relations be-
tween input and output signals. At first mathematical
models should be created, and the parameters for
nonlinear devices will be subsequently estimated by
fitting them to measurement data. Subsection B in
Section III is an intense discussion of this topic.
Further, novel nonlinear noise and electrothermal
models for transistors were presented between 1992
and 1998 [47–50].
The global modeling concept was recently intro-
duced [51]. This technique is essentially a full-wave
analysis of microwave circuits including nonlinear,
semiconductor, and thermal effects. The problem of
such an approach is the enormous time expenses for
the computations. In order to overcome this difficulty,
multiresolution analysis was implemented by using
wavelets. In the multiresolution analysis the wavelets
refine the resolution, and thus the investigation can be
focused on such regions in which the processes rap-
idly vary. In some cases a reduction of the unknown
values up to 90% at an error of 2% can be reached.
Also, in state variable formulations for analyzing non-
linear circuits in conjunction with wavelets, drastic
improvements of the technique can be expected.
C. Power Amplifiers
One of the most important components of microwave
and millimeter-wave circuits is the amplifier, which
can be performed as a single-stage or a multistage unit
[52]. Amplifiers can be subdivided into the following
classes: low noise, power, wide band, feedback, and
balanced.
The design of an amplifier is required to meet the
following technical data: gain and its flatness, oper-
ating frequency and bandwidth, noise behavior, out-
put power, input and output reflection coefficients,
and bias voltage and current. Furthermore, it is nec-
essary that the amplifier be stable and have a very
low, in the ideal case zero, reverse gain parameter.
Achieving the maximum performance at micro-
wave frequencies from power amplifiers is a complex
process because of the inherent interaction between
the active device and its embedding passive circuit,
especially if the active element becomes saturated. In
1992 Trew and Winslow reported [53] on a powerful
design tool to determine the optimum design of an
X-band ion-implanted metal semiconductor field ef-
fect transistor (MESFET), as well as the circuit tuning
conditions necessary to optimize amplifier specifica-
tions. In addition, advanced contributions to optimi-
zation of linearized amplifiers and new integrated

amplifiers in the MESFET, HBT, and pseudomorphic
high-electron mobility field effect-transistor (pHEMT)
techniques were proposed in the following workshops
[54 – 66].
D. Oscillators
Oscillators belong to the fundamentally important
group of nonlinear circuits, because they represent the
sources of microwave and millimeter-wave energy,
which is used in different systems [4]. The oscillators
are essentially DC to RF converters or amplifiers with
infinite power gain. Basically, there are two classes of
oscillators: fixed oscillators with a passive resonant
circuit combined with lumped elements, resonance
cavities, dielectric resonators (DRs), or surface acous-
tic wave elements, and tunable oscillators using var-
actor diodes or yttrium iron garnet (YIG) resonators.
During the design of all oscillator types, there are
aspects, like high efficiency, high temperature stabil-
ity, high reliability, low noise, small size, and low
cost, to which attention should be paid. Additionally,
wider bandwidth, better tuning linearity, and reduced
settling time are required for tunable oscillators. In the
INMMC workshop almost all of these topics were
discussed, and in the following the most important
results of them are summarized.
In 1990 Odyniec delivered a very intensive theo-
retical consideration on applications of Hopf bifurca-
tion to oscillator analysis [67]. He also proposed a
technique that combines the power series with HB.
Russer presented a comprehensive investigation of
microwave oscillators, including nonlinear modeling
of an unperturbed oscillator and modeling of the noise
properties of a disturbed oscillator [68].
The noise behavior of oscillators is an important
task, and it can be interpreted as the short-time sta-
bility of this circuit. Oscillator noise is often consid-
ered as a component of amplitude and phase modu-
lation, whereby the latter is the dominant
phenomenon. In 1992 Kärtner, Anzill, and Russer [69,
70] showed in their contributions how the perturba-
tion theory of non-self-adjoint systems can be em-
ployed to determine noise spectra and suggested a
novel technique for calculating the phase noise of an
oscillator by using the HB method. Rohde presented
in 1998 [71] an improvement of the phase noise
behavior of oscillators operating in microwave and
millimeter-wave bands. This measure only needs an
additional wide-band DC biasing circuit applying
noise feedback.
As a further interesting field, simulation and mod-
eling of microwave and millimeter-wave oscillators
should be mentioned. In 1990 Roth and Beyer gave
Overview of INMMC Workshop 391
[72] an overview of this topic, which included theo-
retical and numerical results. In 1992 Steer offered a
technique for modeling arbitrarily complex distrib-
uted oscillators in a time domain. It appeared that
convolution techniques allow the distributed nature of
these circuits to be integrated in transient simulation
[73].
The oscillator design also includes the research
activities on tunable oscillators. In 1998 Tokumitsu et
al. [74] worked out a comprehensive oscillator design
for tunable oscillators in 3-dimensional monolithic
microwave integrated circuit (3-D MMIC) technol-
ogy. A silicon bipolar junction transistor (BJT) and a
novel injections locking technique to achieve low
phase noise were used [74]. In [75] a K-band HEMT
voltage control oscillator was presented that reached a
tuning bandwidth of more than 3 GHz, a tuning sen-
sitivity of 4.5 GHz/V, and an output power of 6 dBm.
Also, a concept to stabilize a Ka-band YIG-tuned
oscillator using the phase-lock technique was devel-
oped [76].
Additionally, from the very broad field of oscillator
design, other different aspects, including monolithic
integration technology, DRs, and the analysis of
steady-state regimes and the stability of oscillators,
were addressed [77– 80].
E. Application of Nonlinear Network
Design
Nonlinear circuit design is a broadband area that
includes the cases of different microwave and milli-
meter-wave components. Thus, many contributions of
the workshop described a special application in this
scientific area. In the following, these additional sub-
jects are reviewed.
In 1994 Trew and Shin [81] described wide
bandgap semiconductors, which offer the potential for
microwave power amplifiers and oscillators with im-
proved performance. As an example, a GaN MESFET
operated in a class A amplifier is discussed. The
device was biased with a drain voltage of 40 V and
operated at 8 GHz. The amplifier produced a maxi-
mum RF output power of about 4 W/mm at room
temperature and 1.1 W/mm at 500°C. As shown, the
unit offered peak power added efficiencies (PAEs) of
50 and 32% at the two respective temperatures. At
room temperature and 500°C the amplifier had about
20 and 13 dB gains, respectively.
Moreover, a set of three commercial MMICs in the
coplanar waveguide technique and a Doppler radar
unit were presented, which served as a low cost basis
for applications in sensors operated in the Ka band
[82, 83]. Smely et al. in 1998 suggested a dynamic
392 Beyer

bias control of gate and drain voltages for a half- A. Electrothermal Transistor Models
sinusoidally driven, class A harmonic control ampli-
A model introduced by Snowden is described and
fier operating at 1.6125 GHz [84].
discussed in this part. The physical models obtained
Individual solid-state devices have quite limited
in [89] are based on quasi-2-dimensional (Q2D) de-
power levels, and the output power rapidly decreases
scriptions. The experimental results suggested that
with increasing frequency. Higher power levels can
such an approach is viable at frequencies up to 100
be obtained by combining the outputs of a large
GHz.
number of solid-state devices. In 1992 Kim et al.
Device simulations of this kind are commonly per-
introduced [85] an approach in which periodic grids
formed by a treatment of a coupled set of conservation
loaded with active devices were built. Among others,
equations that are derived from moments of the
a hybrid 10 ⫻ 10 X-band HBT grid amplifier was
Boltzmann transport equation. The collection of equa-
discussed. This was a planar design suitable for
tions describing conservation of the carrier density,
monolithic fabrication. The main specifications were
momentum, and energy are treated as a set of hydro-
a peak gain of 10 dB at 9.6 GHz with a bandwidth of
dynamic equations and are written for electrons as
900 MHz. This grid was used to amplify the output
beam of a 4 ⫻ 4 oscillator grid. Also, by combining
⭸n
the grid amplifier with a tilted polarizer, a feedback ⫹ ⵜ共nv兲 ⫽ 0, (1)
oscillator was built. This component tuned over a ⭸t
30% bandwidth from 8.2 to 11 GHz with a maximum
effective radiated power of 8 W at 9.8 GHz. ⭸v q 2
⫹ v ⫻ ⵜv ⫽ E⫺ ⵜ共nw兲
Bahl discussed the current trends in power trans- ⭸t m* 3m*n
mitters in 1994 [86]. He reported on a broadband
1 v
four-way planar combiner that was designed and fab- ⫹ ⵜ共nv2 兲 ⫺ , (2)
ricated on a 15 mm thick alumina substrate. The 3n ␶p
circuits were tested back to back and showed a total
loss of less than 0.5 dB and a return loss greater than ⭸w 2
⫹ v ⫻ ⵜw ⫽ qv ⫻ E ⫺ ⵜ
15 dB over the 8 –16 GHz frequency band. The com- ⭸t 3n

biner loss when connected back to back was less than
0.6 dB.
Next, in 1996 Martin and colleagues investigated
the extended resonance technique for power combin-
ing that is similar to a distributed amplifier design
[87]. They explained an eight device amplifier, for
which the measured and simulated results were very
close. The maximum small-signal gain was 11.5 dB at
9.6 GHz, whereas the output power was 111 mW at
the 3-dB compression point with a PAE of 33.7%.
This showed a power combining efficiency of 91.6%
for the eight device amplifier. The measured band-
width for each amplifier was 5%.
In addition to these techniques, [88] discusses the
electromagnetic and circuit analysis as a joint disci-
pline.
冋冉 冊册
m* 2 1 w ⫺ w0
⫻ nv w ⫺ v ⫺ ⵜ⫻Q⫺ , (3)
2 n ␶w
where q represents the charge on an electron; ⵜ ⫻ Q
represents the energy flux; n is the electron density; v
is the electron velocity; E is the electric field; m* is
the effective mass; ␶p and ␶w are the momentum and
energy relaxation times, respectively; and w is the
average electron energy. Finally, the value of E is
usually obtained from a coupled solution of the Pois-
son equation in terms of the potential ␺.
Additionally, electrothermal models, which take
self-heating and the consequent variation in lattice
temperature into account, require the solution of the
heat generation and heat flow equations (coupled to
the above transport equations), which are

III. NEW DEVELOPMENTS IN H S ⫽ JEE ⫹ qEg G, (4)

MODELING OF ACTIVE MICROWAVE
DEVICES ⭸T
c L␳L ⫽ ⵜ ⫻ 共␬LⵜT兲 ⫹ Hs, (5)
⭸t
This section addresses new developments in the mod-
eling of nonlinear microwave devices that was pre- where cL is the lattice specific heat, ␳L is the lattice
sented in the workshop. These devices are intended density, ␬L is the lattice thermal conductivity, T is the
for use in large-signal microwave and millimeter- lattice temperature, and G is the generation–recombi-
wave CAD. nation rate. Other temperature-dependent phenomena

Figure 1. A cross section of a FET supporting the under-
standing of the quasi-2-dimensional (Q2D) approach.
Adapted from Snowden [89].
that are known to be important in limiting the perfor-
mance of microwave transistors include trapping ef-
fects and breakdown, which are included in the
model.
It was appreciated in the early 1980s that there was
the potential to simplify the 2-D description of the
FET model by recognizing that, even in these shorter
gate length FETs, the carrier transport takes place
predominantly in a plane parallel to the surface (the x
direction in this model) and the equipotential lines in
the undepleted active channel are almost parallel.
This Q2D approximation was further developed, al-
lowing accurate prediction of submicron gate length
MESFET characteristics [90, 91].
It is important to distinguish this type of model
from the gradual channel approximation in that the
channel profile and electric field vary dramatically in
the Q2D case. The model developed in [89] follows
the work of Snowden and Pantoja utilizing a “Gauss-
ian box” partitioning from the source to the drain as
shown in Figure 1 [90]. Finite difference algorithms
are used to discretize the transport equations. The
permittivity and charge contained in each layer is
taken into account. The 2-D behavior of the electric
field is also retained and forms a key aspect of the
charge-control model.
The charge within the Gaussian volume is estab-
lished using a 2-D charge-control model that relates
Overview of INMMC Workshop 393
the 2-D electric field and channel potential to the
structure of the active layers. The inclusion of dEx/dx
in the charge-control model elegantly describes the
substrate injection phenomenon. In the case of the
MESFET, the active layers can also be described
simply but accurately using an equivalent doping pro-
file approach. The HEMT model utilizes a self-con-
sistent Poisson–Schrödinger solver to address quanti-
zation present in such structures. This is incorporated
into a 2-D charge-control model.
The calculation of the electric field distribution
from source to drain begins with the definition of a
source current (i0). Hence, this approach is an initial
value numerical scheme, and the simulation is usually
referred to as “current driven.” In this way, an initial
value for the product of the sheet electron density
(ns0) and average electron velocity (vx0) is established.
The sheet electron density is determined by the
charge-control calculation at the source edge, which
leads to the derivation of the initial electric field from
the electron velocity.
The calculation for the initial field is a subset of the
general case in which the new field is determined
from the electron velocity by solving the momentum
and energy balance equations following the method of
Snowden and Pantoja [90]. The parameters m*(w),
␮(w), ␶p, and ␶w are all extracted as a function of the
average energy from characteristics obtained from
Monte Carlo simulations for the various material sys-
tems.
The model described in Snowden’s workshop con-
tribution [89] uses two important features, which de-
scribe the influence of the longitudinal electric field
component through dEx/dx. First, the injection of car-
riers into the buffer is easy to describe analytically
because it forms a conduction path rather like the
channel of a MESFET. Second, the numerical solu-
tion of the Poisson equation uses an asymptotic
boundary condition that allows a particularly elegant
and efficient solution: the solution for charge in the
Gaussian box still depends on two parameters, the
potential and dEx/dx, but the numerical calculation of
this charge-control model need only be performed up
to the back side of the channel layer. The combination
of these two features speeds up the execution time by
an order of magnitude and yields a robust and efficient
scheme.
From a practical point of view, it is important to
mention that the full Q2D HEMT model is solved for
a given bias condition at a given temperature in less
than 0.05 s on a Hewlett–Packard 712 100-MHz
workstation.
The electrothermal modeling of FETs requires the
coupled solution of the transport equations and heat
394 Beyer
Figure 2. The experimental and numerical I/V character-
istics of a 0.2-␮m gate length pHEMT. Adapted from
Snowden [89].
generation/flow equations described earlier. This in
turn requires that the transport and material parame-
ters are well characterized as a function of tempera-
ture. In the case of GaAs the following set of temper-
ature-dependent material parameters are required for
low field mobility,
␮ 0共T兲 ⫽ ␮ 0共300兲 冉 冊
300
T
2.3
; (6)
for permittivity,
␧ r共T兲 ⫽ ␧ r共300兲关1 ⫹ B ␧共T ⫺ 300兲兴; (7)
for the Schottky barrier height,
V Bi共T兲 ⫽ V Bi共T 0兲 ⫺ k T共T ⫺ T 0兲; (8)
and for the thermal conductivity,
␬ L ⫽ 108.0共T ⫺ 273.15兲⫺0.26 ; (9)
where ␮0(300) is the low field mobility at 300 K,
⑀r(300) is the permittivity at 300 K, kT is the temper-
ature coefficient of the barrier height, T0 is the refer-
ence temperature, and B⑀ is the permittivity tempera-
ture coefficient.
The Q2D pHEMT model illustrated in Figure 1 is
well suited to electrothermal modeling because of its
very high speed of solution. An example of a noniso-
thermal DC characteristic obtained using this ap-
proach is shown in Figure 2 for a 0.2-␮m gate length
pHEMT with a comparison of measured and simu-
lated data. A full electrothermal simulation was used
to obtain the simulated result (evident from the
“droop” in the I/V characteristics at higher power
densities).
The challenge of electrothermal modeling requires
that the temperature within the active device be re-
lated to not only the self-heating of the device in
question but also that of adjacent elements (on
MMICs) and is also a strong function of the die
dimensions, mounting surface, and ambient tempera-
tures (Fig. 3). Furthermore, in some circumstances
radiation and convection must also be accounted for
in addition to conduction through the substrate and
surface structure.
A 3-D thermal analysis technique was developed
that allows full-scale analysis of large device struc-
tures such as power FETs. This solves the steady-state
heat flow equation ⵜ ⫻ ␬(T)ⵜT ⫽ 0 for a 3-D tem-
perature distribution T(x, y, z) over the full die using
the methods of Liou and Bayraktaroglu [92] and Gao
et al. [93]. Because, in practice, most semiconductor
devices are located very close to the surface of most
dies, it is generally only necessary to obtain the tem-
perature at or close to the surface. In these circum-
stances it is sufficient to calculate only the surface
temperature T(x, y, 0). The thermal simulation method
uses a double Fourier expansion method to speed up
the solution and accounts for the temperature-depen-
dent thermal conductivity.
The heat sources may be treated locally using the
coupled electrothermal model, and the solution is
iterated between the local transport model and the full
die model. The temperature obtained from the thermal
model may be used as an initial estimate in the local
transport model. It should be noted that a separate
transport model must be solved for each section of the
transistor, under the assumption that the applied volt-
age is constant for all fingers. The solution follows the
model architecture shown in Figure 4. This does not
present a significant computational burden because
the Q2D models can be solved in less than 0.05 s of
CPU time on a typical workstation, and in practice the
surface temperature calculation time is the dominant
factor. An example of a surface temperature solution
for a power pHEMT is shown in Figure 5.
The numerical solution of the heat flow equation
[eq. (5)] requires a third-order boundary condition and
a sizeable simulation domain. It is known that to
obtain accurate results for FETs, the simulation do-
main for analysis should be extended horizontally for
up to several times the source-drain contact spacing
and to a depth of up to 10 times the active layer
thickness of the device. This is relatively easy to

Figure 3. The thermal modeling interaction between the individual device models and the thermal
solution for the 3-dimensional die structure. Adapted from Snowden [89].
accommodate using the Q2D simulation technique by
utilizing a nonuniform mesh.
A key advantage of physical models is that they are
generally intrinsically capable of large-signal simula-
tion and do not suffer the limitations of equivalent
circuit models and other semiempirical methods,
which rely on extensive a priori DC and RF measure-
ments.
The pHEMT model described here has been used
in both time-domain and HB simulators to perform
large-signal simulation of transistors embedded in
power amplifier and oscillator circuits. The speed of
this model allows it to be readily interfaced to com-
mercial CAD software. For example, the model has
been used with the Hewlett–Packard EEsof Micro-
wave Design System. This approach is illustrated in
Figure 6, where power transfer characteristics are
shown for a class AB power amplifier operating with
a 50-⍀ load at 5 GHz. The device used in this study
is a 0.25 ⫻ 240 ␮m gate InGaAs channel pHEMT
with doping above and below the channel, which was
fabricated by the Hewlett–Packard Microwave Tech-
nology Division.
The agreement between the measured and simu-
lated fundamental performance is excellent. Typi-
cally, the fundamental components (the highest power
levels in Fig. 6) agree to within 1 dB well into
Overview of INMMC Workshop 395
compression. The agreement between the measured
and simulated harmonics is also very good, bearing in
mind the difficulty in obtaining accurate measured
data. The simulation assumes a consistent load im-
pedance at all harmonics, which is unlikely in prac-
tice, that may account for some of the differences
between the measured and simulated data in the har-
monic characteristics.
The electrothermal Q2D model was applied to the
design of a MMIC 38-GHz power amplifier using
both time-domain and HB circuit simulators. This
approach was successful in developing both single-
ended and balanced MMIC designs. The measured
and simulated two-tone results for a single-ended
MMIC pHEMT amplifier operating at 38 GHz are
shown in Figure 7 (with no fitting of data). All mea-
surements were performed on a wafer.
This subsection describes comprehensive electro-
thermal physical and physics-based models for FETs,
which are also suitable for HBTs. The models were
validated for a range of microwave and millimeter-
wave small- and large-signal applications. They offer
the significant advantage of high computational effi-
ciency, coupled with accuracy and the ability to relate
the performance to the design and fabrication process
parameters. Consequently, this type of model can be
396 Beyer
Figure 4. The architecture of the layered electrothermal model for microwave transistors. Adapted
from Snowden [89].
used for yield and spread prediction, as well as for
nonlinear design problems.
B. Nonlinear Microwave Device Models
Using Vectorial Large-Signal
Measurements
The possible use of measurement techniques for de-
scribing the nonlinear behavior of microwave active
devices using vectorial large-signal measurements
was investigated during the late 1980s by several
groups, one at the Hewlett–Packard NMDG within
Figure 5. The simulated temperature distribution on the
surface of an eight finger pHEMT with a gate length of
0.2 ⫻ 200 ␮, a pHEMT die of 100 ␮m, and dissipated
power of 0.5 W. Adapted from Snowden [89].
the VUB-ELEC (Brussels, Belgium) and the other at
K.U. Leuven, ESAT-TELEMIC, together with the
IMEC (Leuven, Belgium). In this subsection, a tech-
nique presented by Schreurs in 1998 is shortly sum-
marized [94], whereby the measurement technique
necessary is also addressed without its completion. It
should be mentioned, however, that the topic of vec-
torial large-signal measurement is discussed in Sec-
tion V in more detail.
Figure 6. The measured and simulated output power of a
class AB power amplifier as a function of the input power
with a FET gate length of 0.25 ␮m and an operating
frequency of 5 GHz into a 50-⍀ load; VDS ⫽ 4.5 V, IDS ⫽
10 mA. The diagram depicts the fundamental (highest
power output), second harmonic (middle power output), and
third harmonic (lowest power output). Adapted from Snow-
den [89].
 Overview of INMMC Workshop 397

Figure 7. The measured and simulated results for a two-tone excitation for a 38-GHz MMIC
pHEMT amplifier. (a) The MMIC layout and (b) fundamental and third- and fifth-order products as
a function of the input power. The measured data are marked. Adapted from Snowden [89].

A nonlinear network measurement system
(NNMS) was developed by Hewlett–Packard, and its
schematic diagram is shown in Figure 8. This system
works in the frequency range from 600 MHz to 20
GHz. The voltage and current waveforms as a func-
tion of time can be easily obtained from the measured
traveling voltage waves and biasing conditions. This
system has an “all in one” capability. This means that
it can determine the DC conditions, the S-parameters,
and the harmonics in regard to their magnitude and
phase information, which is normally only provided
by different measurement equipment.
In her contribution [94] Schreurs proposed a tech-
nique for direct extraction of the state functions using
the NNMS mentioned above. She was focused on a
HEMT, but her analysis can also be performed for
other microwave and millimeter-wave nonlinear de-
vices. The HEMT model was subdivided into extrin-
sic and intrinsic parts. The extrinsic part is related to
the physical layout of the device and consists of linear
elements, which can be determined by well-known
techniques previously developed. After deembedding
the extrinsic elements, the intrinsic part can be ob-
tained, which is related to the physical operation of
the transistor. At the frequencies used in this analysis,
the device can be assumed to be quasistatic, so that
the model given in Figure 9 can be utilized. This
vehicle consists of the parallel connection of a charge
source Qi (V1(t), V2(t)) and a current source Ii(V1(t),
V2(t)) with i ⫽ 1, 2 both at the gate-source terminal

Figure 8. The schematic circuitry of the nonlinear network measurement system (NNMS).
Adapted from Schreurs [94].
398 Beyer
Figure 9. The nonlinear quasistatic model for the descrip-
tion of the intrinsic part of a FET/HEMT device. Adapted
from Schreurs [94].
(port 1) and at the drain-source terminal (port 2). The
intrinsic input and output currents (Imi) can be ex-
pressed by applying the Kirchhoff current law to each
independent node in the circuit:
dQ 1共V 1共t兲, V 2共t兲兲
I m1共t兲 ⫽ I 1共V 1共t兲, V 2共t兲兲 ⫹ , (10)
dt
dQ 2共V 1共t兲, V 2共t兲兲
I m2共t兲 ⫽ I 2共V 1共t兲, V 2共t兲兲 ⫹ . (11)
dt
These expressions can also be described in the fre-
quency domain as
Ᏺ兵I m1共t兲其 ⫽ Ᏺ兵I 1共V 1共t兲, V 2共t兲兲其
⫹ j⍀Ᏺ兵Q 1共V 1共t兲, V 2共t兲兲其, (12)
Ᏺ兵I m2共t兲其 ⫽ Ᏺ兵I 2共V 1共t兲, V 2共t兲兲其
⫹ j⍀Ᏺ兵Q 2共V 1共t兲, V 2共t兲兲其, (13)
where Ᏺ{ 䡠 } is the symbol of the Fourier series, if the
excitation is a single-tone signal, and ⍀ represents the
diagonal matrix ⍀ ⫽ diag{0, ␻0, 2␻0, 3␻0, . . . ,
H␻0}, where ␻0 is the angular frequency of the fun-
damental pulsation and H is the number of measured
harmonics. According to eqs. (12) and (13), at each
port H there are complex equations with 2H complex
unknowns that can be obtained. In principle, this
system of equations could be solved by performing
two measurements at two different fundamental pul-
sations. In practice, however, one will have difficul-
ties with the requirements that the spectra {ᏲV1(t)}
and {ᏲV2(t)} have to be kept fixed. A solution is that
instead of a single-tone RF synthesizer a multisine
source will be used [95], which allows the control of
both the amplitude and phase of the harmonics.
Next, the capacities by
⭸Q i共V 1共t兲, V 2共t兲兲
C ij共V 1共t兲, V 2共t兲兲 ⫽ , (14)
⭸V j共t兲
with i, j ⫽ 1, 2 are defined. Hence, eqs. (10) and (11)
can be rewritten as
I m1共t兲 ⫽ I 1共V 1共t兲, V 2共t兲兲
冘 C 共V 共t兲, V 共t兲兲 dVdt共t兲 ,
2
j
⫹ 1j 1 2 (15)
j⫽1
I m2共t兲 ⫽ I 2共V 1共t兲, V 2共t兲兲
冘 C 共V 共t兲, V 共t兲兲 dVdt共t兲 .
2
⫹
j
(16)
2j 1 2
j⫽1
In these two equations there are six unknowns, which
can be solved by performing three large-signal mea-
surements at three different fundamental pulsations by
applying only a single-tone a1 excitation (see Fig. 8).
The need for three independent measurements sig-
nificantly increases the minimum number of vectorial
large-signal measurements to be taken, generating a
complete nonlinear model. This implies that the min-
imum number of required measurements will not be
significantly less in comparison to the number of DC
bias points at which S-parameter measurements are
performed in the common nonlinear model generation
procedure. Therefore, it is mandatory to exploit all the
degrees of freedom in the NNMS measurement setup
to reach excellent coverage of the (V1, V2) bias plane
within one large-signal measurement.
At this point the (V1, V2) plane coverage should be
discussed. In the case of a single-tone excitation at a
fixed fundamental frequency (f0), the degrees of free-
dom are only the DC gate-source and drain-source
biases and the incident power level. These facts limit
the bias range, which can be covered in one large-
signal measurement. A better coverage of the (V1, V2)
plane can be reached by properly engineering the
applied signals at port 1 and port 2, given the actual
device under test (DUT). The NNMS system shown
schematically in Figure 8 allows a simultaneous in-
jection of both RF signals at both ports. This implies
that by adding a second single-tone RF synthesizer to
the setup, the magnitude, phase, and frequency of the
incident traveling voltage wave at port 2 can also be
varied. As an example, a 0.2-␮m gate length and
100-␮m pHEMT was investigated. The traveling volt-
age waves were a1 ⫽ 4 dBm at f0 ⫽ 6 GHz and a2 ⫽
12 dBm at f0 ⫽ 5.9 GHz. The DC bias conditions
were VgsDC ⫽ 0.4 V and VdsDC ⫽ 1 V. The phase of
a1 was kept fixed to 0° while the phase of a2 was
taken as 0°, 30°, 45°, and 90°. Subsequently, HB
analysis calculated 10 harmonics and intermodulation
 Overview of INMMC Workshop 399

tion is minor when performing more than 15 NNMS

measurements. In the second case and for the same
number of vectorial large-signal measurements, it is
visible that more grid points are covered. The reason
for this is that, although the phase of a2 is changeable,
it is not possible to cover a whole rectangular grid
because of the physical inverter characteristics of the
pHEMT. Better coverage can only be reached by
selecting appropriate DC conditions. In the third case,
the second case conditions at two different fundamen-
Figure 10. The coverage of the (V1, V2) bias plane with
the phase of a2 having the values of (⫹) 0°, (⫻) 30°, (j)
45°, and (ȯ) 90°. Adapted from Schreurs [94].

products; then, using these conditions, the covered

bias range was obtained (Fig. 10).
Again, after using the four simulations mentioned
above, the constitutive relations on a 50-mV grid for
V1 and a 100-mV grid for V2 were calculated. Ne-
glecting the source value I1 (see Fig. 8) and consid-
ering the integrability conditions, the necessary (V1,
V2) dependent variables are I2, C11, and C22. These
functions are depicted in Figure 11. In each diagram a
comparison between the values obtained from an S-
parameter extraction and those derived from the
above HB simulation is presented. Observe that four
measurements are not sufficient to accurately describe
the complete bias plane. Nevertheless, the good agree-
ment between the S-parameter measurement and the
above HB simulation validates the feasibility of this
theory.
As an experimental result, Figure 12 shows the
coverage of the (V1, V2) plane by two vectorial large-
signal measurements at certain DC bias conditions.
The first DC bias condition (V1, V2) was ⫺0.3 and 0.6
V and the second one was ⫺0.1 and 1.2 V. In both
cases, the frequencies of the traveling voltage waves
a1 and a2 were 4.2 and 4.8 GHz, respectively. The
power values were set for a1 to ⫺4 dBm, whereas for
a2 it was set to ⫺2 dBm.
At these two bias conditions, NNMS measure-
ments were performed, whereby the phase of a2 was
randomized, because it was not possible to set the
phase condition of an RF synthesizer to a prescribed
value.
A rectangular grid on the (V1, V2) plane was again
defined: the values for V1 were chosen from ⫺0.5 to
0 V in steps of 50 mV, whereas those for V2 ran from
0.5 to 1.5 V in steps of 0.1 V. Figure 13 shows how Figure 11. The elements I2, C11, and C22 of the nonlinear
many of these grid points are covered at least 3 times model of a 0.2-␮m gate length and 100-␮m gate width
as a function of the excitation signal conditions and pHEMT. The values are extracted from (—) S-parameter
the number of vectorial large-signal measurements. In measurements and (j) a harmonic balance (HB) simulation
this case one can recognize that the surplus informa- mentioned above. Adapted from Schreurs [94].
400 Beyer
Figure 12. The coverage of the (V1, V2) plane by two
vectorial large-signal measurements at two different DC
bias conditions. Adapted from Schreurs [94].
tal frequencies of a1 were applied. Under such cir-
cumstances, about 120 (V1, V2) grid points were cov-
ered at least 3 times by 30 NNMS measurements. The
deviation from the second case is to find time deriv-
atives in the larger variation in the values of V1 and V2
when performing NNMS measurements at different
fundamental frequencies. This fact implies that the
solvability conditions are easier to meet. This exper-
imental result delivers an impression of a possible
reduction of the minimum number of NNMS mea-
surements necessary instead of the traditional DC and
linear vectorial measurements. The order of reduction
is strongly related to the actual measurement capabil-
ities, for instance, such as the NNMS bandwidth and
the availability of a RF multisine source.
The number of grid points at which the state func-
tions can be determined is also related to the extrac-
tion accuracy necessary. The solvability requirements
that the three V1 and three V2 time derivatives have to
be sufficiently distinct is expressed in terms of the
Figure 13. The number of grid points that are covered at
least 3 times as a function of the excitation signal conditions
and the number of vectorial large-signal measurements. (⫹)
The DC bias condition was fixed and the phase of a2 was
changed. (⫻) Two bias conditions were considered as men-
tioned above. (j) Two DC conditions and two different
fundamental frequencies of a1 were applied. Adapted from
Schreurs [94].
Figure 14. A comparison of the (—) the measured DC/
VNA and (j) the NNMS extracted I2 and C11 values of an
InP HEMT at V1 ⫽ 1.2 V. Adapted from Schreurs [94].
condition number. The extraction algorithm is an it-
erative procedure. Additional measurements were
taken as long as the corresponding condition number
of certain (V1, V2) grid points is not smaller than the
prescribed condition number. The conditioning of eqs.
(15) and (16) is improved by dividing the V1 and V2
time derivatives by 1E9. Figure 14 shows the ex-
tracted I2 and C11 values, which are the two most
important nonlinear elements of the model, as a func-
tion of V1 and at V2 ⫽ 1.2 V. In this case, the
maximum allowed condition number was equal to 35.
The accuracy of these NNMS extractions can be de-
termined by comparing them with the results obtained
by standard DC and S-parameter measurements on the
same device. Figure 14 also shows an excellent agree-
ment between the two techniques, thus validating the
developed NNMS-based nonlinear modeling proce-
dure.
IV. MICROWAVE AND MILLIMETER-
WAVE MIXERS AND FREQUENCY
MULTIPLIERS
Microwave mixers use the behavior of certain nonlin-
ear devices in order to convert the signal frequency
from a low frequency band to a transmitting fre-
quency band or from a received frequency band to a

low frequency band. When a RF signal is supplied
into a nonlinear device, harmonics will appear. Two
simultaneously injected signals produce various spu-
rious signals. If a mixer is to be designed, only one
mixed signal is needed to be the output signal, and all
of the other ones must be eliminated [3, 4]. There are
several techniques for suppressing the undesired sig-
nals, and at the same time, they classify the kinds of
mixers. Thus, in a first approximation the following
mixer classes may be defined: image rejection mixers,
balanced mixers, and double balanced mixers. The
nonlinear behavior necessary for realizing mixers at
microwave frequencies offer both diodes and transis-
tors [96]. When using diodes, one-, two-, four-, or
eight-diode mixers can be designed. However, the
fundamentals of these types of mixers can be under-
stood as the principle of the operation of a single
diode mixer. All these mixers show a relatively con-
stant conversion loss, if the signal levels are higher
then 6 dB below the local oscillator power.
Transistor mixers have an inherent advantage over
diode mixers, because they provide conversion gain.
With the introduction of MMIC technology one of the
major challenges was the design of mixers for this
technique [97] that show broad bandwidth, high iso-
lation, and good conversion behavior.
Frequency multiplication can be achieved by using
different electrical principles [4]: the static I/V char-
acteristics of varistor diodes, the nonlinear behavior
of varactors for parametric multiplication, step-recov-
ery diodes for harmonic generation, simultaneous har-
monic generation typically in class C amplifiers, mul-
tiplication with gain in GaAs FETs, and injection
locked oscillators at multiples of the frequency. Some
workshop presentations show new solutions and re-
sults in these principles, which are briefly discussed
below.
A. Mixers and Frequency Multipliers
The first work during the workshops on the topic of
mixer design was presented by Maas in 1990 [98], in
which he examined the problem of modeling GaAs
MESFETs and diodes for calculations of intermodu-
lation and spurious mixer responses. It was shown
that an adequate model must express not only the
absolute I/V characteristics of the device but also the
derivatives of those characteristics.
During this first edition of the workshop, Heinen et
al. reviewed the formulation of the Jacobian for the
multitone HB technique [99]. Another comprehensive
article was presented by Pavio, which gave an over-
view on the design and analysis of a variety of active
mixer structures, employing both single- and dual-
Overview of INMMC Workshop 401
gate GaAs FETs focused on monolithic integration
[100].
System designers need to describe mixer behavior
because they usually have insufficient information
regarding the spurious responses. Therefore, in 1992
Kalghatgi et al. presented a method based on mea-
surements to characterize spurious behavior that was
attributable to the nonlinearities in the mixers [101].
Further results on the topics of mixers and fre-
quency multipliers were presented in [102–105].
B. Balanced Mixers and Frequency
Multipliers in MMIC Technique
One of the major challenges in monolithic circuit
technology is the design of balanced planar compo-
nents, especially mixers and frequency multipliers.
This section presents an overview of the contribution
presented by Maas in 1998 [97].
Balun design is the key to developing high-perfor-
mance planar mixer and multiplier circuits. Diode
technology in monolithic circuits is sufficiently ma-
ture that diodes rarely limit the bandwidth, conversion
efficiency, port voltage standing wave ratio, or port
isolation of a mixer or multiplier; these characteristics
are determined almost exclusively by the baluns. Ac-
cordingly, the approach to optimizing these circuits in
[97] is one of optimizing the baluns.
In a coupled-line balun it is essential that as much
energy as possible be contained in the odd mode.
Energy in the even mode causes imbalance, which
results in degraded port to port isolation, passband
ripple, and spurious resonances. A transition from a
coaxial line to a suspended-substrate balun can be
designed in such a way that it excites primarily an odd
mode. In a planar monolithic balun, however, the only
way to minimize the even-mode energy is to make the
even-mode characteristic impedance much greater
than the odd mode. In a simple, quarter-wavelength
coupled-line balun, the even-mode characteristic im-
pedance must be at least 10 times the odd-mode
impedance, preferably even greater.
Another concern is matching between the even-
and odd-mode phase velocities in a coupled-line
balun. If these phase velocities are significantly dif-
ferent, the performance of the mixer is degraded.
Thus, suspended-substrate baluns are invariably real-
ized on low dielectric-constant substrates, typically
fiberglass-reinforced Teflon or other composite mate-
rials. Although the mechanical strength and thermal
stability of alumina and other ceramic materials are
attractive, their high dielectric constant causes the
even- and odd-mode phase velocities to differ by a
generally unacceptable factor of at least 2.0.
402 Beyer
Figure 15. The arrangement of a doubly balanced ring
mixer using quarter-wave parallel-strip baluns and a four-
wire balun. Adapted from Maas [97].
Because of the need for a high even-mode charac-
teristic impedance, realizing a simple quarter-wave-
length coupled-line balun on a GaAs substrate is
virtually impossible. Even when a minimum strip
width and a maximum substrate thickness are allow-
able, the high dielectric constant of GaAs (approxi-
mately 12.9) causes the even-mode capacitance be-
tween the strips and ground plane to be too high, so
the even-mode characteristic impedance is too low.
As in any inhomogeneous medium, the even- and
odd-mode phase velocities are not equal; however, in
a planar circuit they are usually close enough that the
impedances, not the phase velocities, are of primary
concern.
There are two possible solutions to this dilemma:
the first is to use a type of balun that is tolerant of high
even-mode impedances. The second is to increase the
even-mode impedance by increasing the balun’s even-
mode inductance instead of reducing the even-mode
capacitance. Several circuits based on both ideas will
be described. In many of the circuits discussed here,
the baluns use only straight coupled transmission
lines, which can be designed accurately and usually
perform as predicted.
The primary tool for the design of the coupled-line
baluns is LINPAR, a program that analyzes planar
transmission-line structures using quasistatic moment
methods [106]. Except when unusual dimensions are
used, a transver electromagnetic assumption is valid
for monolithic integrated circuits to at least 60 GHz.
LINPAR generates the current and voltage eigenvec-
tor matrices and the propagation constants for the
coupled lines. These are imported directly into the
microwave circuit simulator, which generates an ad-
mittance matrix for the coupled-line section. The mix-
ers are investigated by the HB technique combined
with conversion matrix analysis. If intermodulation
characteristics are of interest, time-varying Volterra
analysis is also performed.
Figure 15 shows a common realization of a micro-
wave doubly balanced, diode-ring mixer. Such mixers
are frequently realized in hybrid form using broad-
side-coupled baluns on suspended substrates for the
RF and local oscillator (LO) and a four-wire balun for
the intermediate frequency (IF). This type of fabrica-
tion requires considerable hand labor, which is expen-
sive and can lead to poor reliability.
It is clearly impossible to obtain adequate perfor-
mance with parallel-strip baluns on GaAs substrates.
Therefore, to increase the even-mode inductance, the
parallel-strip balun will be wrapped in a spiral (Fig.
16). The odd-mode inductance and capacitance are
minimally affected by the spiral configuration, but the
even-mode inductance increases substantially.
The circular spiral is not optimum for analysis by
an electromagnetic simulator, and most simple anal-
yses do not predict spurious resonances well enough
to be useful. The design of the balun was based on the
assumption that odd-mode operation was not signifi-
cantly different from that of a straight balun and
even-mode operation was similar to that of an ordi-
nary single-spiral inductor. The dimensions of the
balun are taken from circular-spiral inductors whose
performance was measured. From the inductance of
the model inductor, one can estimate the even-mode
characteristic impedance to be in the 400 – 600 ⍀
range or 20 –30 times the odd-mode impedance. The
use of the spiral inductor also guarantees that spurious
resonances are well outside the mixer’s passband. At
low frequencies, two or more spiral baluns can be
cascaded; this generally gives a wider resonance-free
bandwidth than a single large spiral balun.
The four-wire IF balun uses five coupled strips.
The two outer strips are connected in parallel, effec-
tively operating as a single strip. This arrangement
was determined from moment-method analyses of the
multiple coupled-line structure and was found to be
the only practical form of the balun having a reason-
ably uniform capacitance matrix. Because of the need
Figure 16. The balun used in the spiral-ring mixer.
Adapted from Maas [97].

Figure 17. A photograph of the integrated spiral-ring
mixer. Adapted from Maas [97].
for a broad RF and LO frequency response and low
capacitance from the strips to ground, this balun was
relatively long (3 mm) and its strips were narrow (10
␮m).
Figure 17 shows the mixer, which is realized on
635 ␮m thick GaAs to maximize the baluns’ even-
mode impedance. The LO frequency range extends
lower than the RF, so two spirals are used. This
combination was necessary to achieve good low fre-
quency response while preventing spurious reso-
nances at the high end of the band. The Schottky
barrier diodes are fabricated on an HBT collector
table; they have 10 ⫻ 10 ␮m square anodes, a 0.025
pF junction capacitance, and an 8 ⍀ series resistance.
In Figure 18 the conversion loss of the mixer is
depicted. The relatively high conversion loss (9 dB) is
probably caused by the long IF balun. At millimeter
Figure 18. The conversion loss characteristic of the spi-
ral-ring mixer. Adapted from Maas [97].
Overview of INMMC Workshop 403
Figure 19. The LO to RF and LO to IF isolation of the
spiral-ring mixer. Adapted from Maas [97].
wavelengths this balun could be much shorter and
lower in loss.
Figure 19 shows the LO to RF and LO to IF
isolation. The high isolation shows that the balance of
the baluns is very good.
The topic of star mixers using Marchand baluns
should now be addressed. The Marchand balun is
considerably less sensitive to low even-mode imped-
ance than the quarter-wave balun. Good performance
can be obtained when the even-mode impedance is
about 3 times the odd mode.
Figure 20 shows a star mixer of the type used in
suspended-substrate hybrid circuits, consisting of two
three-strip, broadside coupled Marchand baluns. It
was converted to a planar form by moving the lower
coupled strips alongside the upper strips. To minimize
capacitance in GaAs circuits, it is helpful to use a
635-␮m substrate thickness, instead of the more com-
mon 100 ␮m.
A large number of planar star mixers were devel-
oped in the 10 –50 GHz range using the Marchand
balun. These exhibit low, flat conversion loss of usu-
ally 7–9 dB and a RF/LO bandwidth approaching 1
octave. The IF bandwidth is from DC to approxi-
Figure 20. A conventional suspended-substrate star
mixer. Adapted from Maas [97].
404 Beyer

Figure 21. An integrated 26 – 40 GHz star mixer in the

CPW technique. The IF bandwidth is DC to 12 GHz. Both
the RF and LO baluns are identical. Adapted from Maas
[97].

mately 80% of the low end of the RF/LO baluns’

bandwidth.
In Figure 21 the first 28 – 40 GHz mixer can be
recognized. To minimize the capacitance between the
coupled lines and the ground plane, the mixer was
realized in a coplanar waveguide on a thick 635 ␮m
substrate. This mixer used an HEMT gate to channel
junctions for the diodes. These diodes had only ⬃250
GHz cutoff frequencies, yet good performance was
achieved. Subsequent mixers used HBT-technology
Schottky diodes similar to those used in the spiral-ring Figure 22. The conversion loss and output third-order
mixer. Figure 22 shows the conversion loss and out- intercept point of a planar-star mixer. Adapted from Maas
put third-order intercept point of a 26 – 40 GHz star [97].
mixer.
Finally, the theme of a broadband ring mixer poses: first, it helps to reject the even-mode output of
should be briefly treated. Figure 23 shows another the Marchand, and second, it provides a convenient
type of ring mixer. This mixer is similar in concept to connection point for the IF port. Figure 25 shows the
one of the most common types of hybrid balanced conversion loss.
mixers used in commercial components. In the mixer
of Figure 23, the suspended-substrate parallel-strip
baluns with planar Marchand baluns and an IF struc-
ture with a planar equivalent were again replaced.
This mixer covers 18 – 40 GHz for RF and LO and DC
at ⫺11 GHz IF. Figure 24 shows a photograph of the
chip.
The LO port of this mixer uses an asymmetrical
Marchand balun in which one of the ␭/4 sections has
much lower odd-mode characteristic impedance than
the other. This improves the balance and bandwidth of
the coupler. The RF port uses a similar Marchand Figure 23. The circuit principle of a planar-ring mixer.
section and a U-shaped balun, which serves two pur- Adapted from Maas [97].

Figure 24. A photograph of the integrated broadband-ring
mixer. Adapted from Maas [97].
This subsection showed that planar monolithic di-
ode circuits having high performance and broad band-
width can be realized successfully if the baluns are
carefully designed to compensate for the additional
capacitance between the balun’s conductors and
ground. The performance of such components is com-
parable to that of hybrid circuits realized on sus-
pended substrates.
V. MEASUREMENT TECHNIQUES
There is a growing number of applications relying on
microwave technology, among others, the GSM sys-
tem, the CDMA cellular phone, the Local Multipoint
Distribution Service, the Japanese PCS and PDC, the
W-CDMA system, and the Wireless Local Loop. The
design of the power amplifiers used in these systems
is often one of the toughest problems to solve. The
technical specifications of all these applications need
experimental verification and the device models need
support by measurements, thus advanced measure-
ment techniques are a permanent requirement. Ac-
cording to this expectation, a big portion of the work-
shop was focused on the topic of measurement
techniques. Next, a short discussion about the contrib-
uted articles is given.
A. Developments of Nonlinear
Measurement Techniques
In 1992 Braun et al. [107] presented a new approach
for the realization of a microwave oscillator measure-
Overview of INMMC Workshop 405
ment system up to 60 GHz. Based on network ana-
lyzer and power meter measurements, a special cali-
bration technique for this system is proposed. It is
thus possible to measure the spectrum of an oscillator
directly at its output, the frequency and power on the
wafer, and the pulling and pushing of the figure. Still,
in 1992 Bouysse and colleagues described a novel
active load-pull setup allowing accurate measure-
ments of a highly mismatched power transistor in the
microwave frequency range [108].
During the 1992 workshop edition, Kompa et al.’s
comprehensive article [109] described the state of the
art and new developments of the large-signal mea-
surement techniques. Furthermore, they presented an
advanced large-signal measurement setup controlled
by computer with a high harmonic frequency band-
width available.
In 1994 Demmler and coworkers developed an
on-wafer measurement system for the complete char-
acterization of microwave power transistors up to 40
GHz [110]. The vector measurement capability of the
microwave transition analyzer is utilized, allowing
full vector calibration of the measurement system for
the fundamental and higher harmonics. Again in
1994, Roth et al. presented a novel approach for a
measurement system to experimentally investigate the
most relevant technical specifications of microwave
circuits operating in combination with an automatic
wafer probe station [111].
In his contribution in 1996 [112], Verspecht pro-
posed a black-box model for power transistors in the
frequency domain. This model renders possible the
prediction of the transistor behavior for one-tone ex-
citation with arbitrary fundamental and harmonic im-
pedances present at the output. The model parameters
Figure 25. The conversion loss of the ring mixer in Figure
24. Adapted from Maas [97].
406 Beyer
can be extracted out of a limited set of nonlinear
network analyzer measurements. These ideas were
further developed in [113] and are presented in the
following subsection.
In the course of the 1996 workshop, Mallet and
colleagues presented [114] a harmonic load-pull sys-
tem, which is a continuation of their former research
activities proposed in [108]. The extraction of the
measured voltage and current waveforms can be per-
formed by coupling the active loops used with a
nonlinear network analyzer, allowing the visualiza-
tion of the influence of harmonic loads on time-
domain waveforms.
B. Vectorial Large-Signal Measurements
Verspecht and Van Esch [113] proposed a modeling
approach in 1998 that is based on the use of a black-
box frequency-domain model, which is discussed in
the following text. The technique is called nonlinear
scattering functions and can be considered as an ex-
tension of scattering parameters into hard nonlinear
behavior. The model can accurately simulate the be-
havior of a power transistor under large-signal one-
tone excitation at the input with any arbitrary imped-
ances present at the output (fundamental and all
harmonics). The model parameters are extracted
based on a relatively small set of measurements per-
formed with an experimental load-pull setup built
around the NNMS mentioned in subsection B in Sec-
tion III (see Fig. 8). These measurements are actually
a combination of passive and active harmonic load-
pull measurements.
Extending the concept of well-known scattering
parameters in order to describe nonlinear behavior is
not trivial. These parameters are called scattering be-
cause they relate incident and reflected (or scattered)
traveling voltage waves at the signal ports, thereby
completely describing the behavior of a linear micro-
wave device. The nonlinear scattering functions have
the same purpose: relating incident and reflected trav-
eling voltage waves.
Incident and reflected voltage waves are denoted
by the symbols a and b, respectively. In many cases
traveling voltage waves (and the corresponding S-
parameters) are defined in a characteristic impedance
of Z ⫽ 50 ⍀ as a reference impedance. When dealing
with nonlinear behavior, however, it may be conve-
nient to use different characteristic impedances. The
characteristic impedance used for the definition of the
waves is indicated as a subscript in parentheses. When
the impedance is not indicated, it is assumed to be 50
⍀ or the value is irrelevant for the given formula. The
relationship between the voltage v(z) and the current
i(z) (defined as being positive when flowing into the
DUT, the signal port) on the one hand and the trav-
eling voltage waves on the other hand is given by
v共 z兲 ⫹ Zi共 z兲
a共 z兲 ⫽ (17a)
2
and
v共 z兲 ⫺ Zi共 z兲
b共 z兲 ⫽ , (17b)
2
where z represents the direction of the wave propaga-
tion. Now the device behavior under sinusoidal (one-
tone) excitation should be described. Excluding sub-
harmonic and chaotic behavior, all signals appearing
at the DUT ports will have the same periodicity,
corresponding to the reciprocal of the fundamental
frequency. The periodic signals are given by their
complex Fourier series coefficients. These are com-
monly called the spectral components of the signal
having an associated harmonic index, which denotes
the ratio between the associated frequency and the
fundamental one. The harmonic index is indicated by
the last subscript. A harmonic index equal to zero
corresponds to DC. The first subscript indicates the
respective DUT signal port. Port 1 will typically cor-
respond to the input (gate, base) and port 2 to the
output (drain, collector) of the DUT. Some examples
are a(10)21 refers to the fundamental of the incident
voltage wave at port 2, defined with Z ⫽ 10 ⍀ and b13
refers to the third harmonic (with frequency equal to
3 times the fundamental frequency) at port 1, defined
with Z ⫽ 50 ⍀.
The black-box model is briefly discussed next.
Conceptually, the black-box model equation is trivial.
The first thing to do is to phase normalize all signals
by applying a time delay such that a11 has zero phase.
In this way all spectral component phases are
uniquely defined. This is done as follows:
a kp ⫽ a kp
NN
冉 冊
NN
a11
兩a11 兩
NN
⫺p
bkp ⫽ bkp
NN
冉 冊 NN
a11
兩a11 兩
NN
⫺p
, ᭙ k, p
(18)
where NN denotes not normalized. One can then
simply write
b kp ⫽ S kp共Re共a11 兲, Re共a12 兲, Im共a12 兲,
Re共a13 兲, . . . , Re共a21 兲, . . . 兲. (19)

This equation simply states that the scattered voltage
wave spectral components are complex functions of
the real and imaginary parts of all the incident voltage
wave spectral components. The functions Skp are
called the nonlinear scattering functions. Note that
Im(a11) does not appear in the equation because this
value is always zero because of the phase normaliza-
tion. The modeling problem is now transformed in
identifying the Skp for all scattered spectral compo-
nents. In practice it is sufficient to consider a limited
number of harmonics (including up to the fourth har-
monic has been enough for all practical cases inves-
tigated until now). Generally speaking, identifying the
Skp would imply the identification of a set of multi-
dimensional nonlinear functions, which is very hard
to do in a practical sense. In many cases, however,
signal conditions are such that the Skp can be simpli-
fied. For a power amplifier with one dominant tone at
the input, all harmonic signals will be relatively small
compared to the fundamental signals. It is then pos-
sible to expand the Skp into a MacLaurin series for all
harmonic components (excluding the fundamental
components at both signal ports). This results in
b kp ⫽ F kp ⫹ 冘 G kpijRe共aij 兲
冘
i⫽1,2; j⫽2, . . . ,N
⫹ Hkpij Im共aij 兲.
i⫽1,2; j⫽2, . . . ,N
In this equation N represents the highest harmonic
index considered; Fkp, Gkpij, and Hkpij are functions of
Re(a11), Re(a21), and Im(a21), respectively, which are
the fundamental components. The expressions given
by eq. (21) are valid for these:
F kp共Re共a11 兲, Re共a21 兲, Im共a21 兲兲
⫽ Skp 共Re共a11 兲, Re共a21 兲, Im共a21 兲, 0, 0, . . . 兲
⭸Skp
G kpij共Re共a11 兲, Re共a21 兲, Im共a21 兲兲 ⫽ 兩a ⫽ 0;
⭸ Re共aij 兲 rs
᭙ r ᭙ S ⬎ 1,
⭸Skp
H kpij共Re共a11 兲, Re共a21 兲, Im共a21 兲兲 ⫽ 兩a ⫽ 0;
⭸ Im共aij 兲 rs
᭙ r ᭙ S ⬎ 1.
These conditions reduce the problem to fitting a set of
3-D functions. A practical example of this approach,
based on HB simulations, is given in [112], whereby
the 3-D fitter used is a simple linear grid interpolator.
Overview of INMMC Workshop 407
As will be illustrated by the actual measurements,
it is possible to further simplify (21) without a signif-
icant reduction of the application domain. The idea is
that power amplifier designers are particularly inter-
ested in the transistor load-pull behavior in a limited
area of the Smith chart. This area corresponds to a
limited range of output impedances, typically around
a certain value Z.
When the impedance Z is present at port 2, it is
obvious that a21(z) ⫽ 0. For impedances deviating
weakly from Z, a21(z) will be small enough to linear-
ize Skp also in the variables Re(a21(z)) and Im(a21(z)).
Practical experience teaches that the resulting model
is valid for output impedances ranging from 0.5 ⫻ Z
to 2Z.
The modeling approach as described by (21) is
only valid for fixed biasing settings. The dependen-
cies on the biasing can simply be included in the
model as extra nonlinear parameters. This finally re-
sults in the black-box model described by
b kp ⫽ F kp ⫹ G kp21Re共a21 共z兲兲 ⫹ Hkp21 Im共a21 共z兲兲
⫹ 冘 Gkpij Re共aij 共z兲兲
⫹ 冘
i⫽1,2; j⫽2, . . . ,N
Hkpij Im共aij 共z兲兲, (22)
i⫽1,2; j⫽2, . . . ,N
(20)
where all F, G, and H are complex functions of
Re(a11) and the independent bias settings. These bias
settings are typically base current and collector volt-
age (bipolar technology) or gate voltage and drain
voltage (FET technology).
Now, suppose one wants to model a set of M
output functions (denoted by yi) having R inputs (de-
noted by xi) and further suppose that one knows that
there is some correlation in the behavior of the dif-
ferent M functions. For the type of artificial neural net
(ANN) that is used, the fitted function can then be
expressed as
冘 W sigm共h 兲 ⫹ ␣ ;
Q
yi ⫽ ij j i (23)
j⫽1
with
冘 V x ⫹␤.
R
(21) hj ⫽ (24)
jk k j
k⫽1
In (23) and (24), the model parameters are the matri-
ces Wij and Vjk, as well as the vectors ␣i and ␤i. The
vector hj containing Q elements is only used as an
408 Beyer
Figure 26. The graph of an artificial neural net. Adapted
from Verspecht and Van Esch [113].
intermediate variable. The sigmoid function, which is
often utilized for constructing ANNs, is defined by
1 components (both a and b), which is the more detailed
sigm共x兲 ⫽ . (25)
1 ⫹ e⫺x
The fact that the class of functions described by (23)
and (24) can fit any smooth multidimensional function
can be explained as follows. The output function is
written as a linear combination, with offset, of the
functions sigm(hj), being equal to
冉冘 冊
R measured by a Hewlett–Packard 4142B semiconduc-
sigm Vjk xk ⫹ ␤j . (26)
k⫽1
This function is constant on all hyperplanes having
the dimension of R ⫺ 1 parallel with the one de-
scribed by
冘 V x ⫽ 0.
R pedance range to be covered by the model. For this
jk k (27)
k⫽1
As such, this function divides the R-dimensional input
spaces into two regions separated by a hyperplane,
being equal to one in one region and zero in the other
region, with a smooth transition between the two
regions [see eq. (27)]. It is not hard to imagine that
nearly every smooth function can be approximated by
a superposition (with offset) of such functions.
An ANN is often represented by a schematic, as
shown in Figure 26. The points in the schematic are
the nodes, and those in the middle form the hidden
layer. The vectors ␣i and ␤i are called the node biases
and the matrices Wij and Vjk are called the weights of
the node connections. The problem is then to start
from a random set of measured input values and
associated output values and to calculate the values of
the matrices Wij and Vjk and the vectors ␣i and ␤i,
resulting in a good correspondence between the mea-
sured and modeled data.
For the application made here, one ANN is trained
(in other words fitted) for each Fkp and each set (Gkp1j,
Gkp2j, Hkp1j, Hkp2j). Thus, there are two classes of
ANNs: the ones describing the Fkp values, which have
three input nodes [Re(a11) and the two bias settings]
and two output nodes (the real and imaginary parts of
Fkp), and the ones describing the G and H values,
which have three input nodes and eight output nodes
(the real and imaginary parts of Gkp1j, Gkp2j, Hkp1j,
Hkp2j). Although other arrangements are also possible,
the one chosen is a good practical compromise be-
tween the model complexity and ease of fitting.
In Figure 27 depicts the measurement setup allow-
ing the application of sufficient excitation signals to
the DUT and the accurate measurement of the spectral
description of the system mentioned above starting
with the explanation of Schreurs’ ideas according to
[94] (see Fig. 8).
The main technical specifications of the NNMS
system discussed here were as follows in 1998: it
automatically performed the measurement of all val-
ues mentioned above, providing a system bandwidth
of 20 GHz. The bias was controlled and accurately
tor parameter analyzer. The system contained two
microwave synthesizers: synth 1, which is connected
to a ZHL-42 power amplifier, generated the incident
wave a11; synth 2, which is connected to a switch,
diplexers, and power amplifiers, allowed the genera-
tion of all other incident spectral components (one at
the time). The tuner determined the fundamental im-
particular case Z ⫽ ⬇10 ⍀. When the synthesizer is
set to the fundamental frequency and its output is
directed toward port 2, active load-pull occurs,
thereby synthesizing impedances deviating from the
one by the tuner. The impedance range covered is
about 5–20 ⍀.
The actual model extraction of a DUT was illus-
trated by the example of a silicon BJT power transis-
tor. First the tuner was set such that the fundamental
impedance at a frequency of 1.88 GHz seen by the
collector was lying within the interesting part of the
Smith chart, in this case about 10 ⍀. Then the values
of all F, G, and H under consideration (22) were
determined at a random set of large-signal settings
within a certain range. The large-signal settings were
the amplitude of a11 and the independent biasing
parameters, in this case the base current and the
 Overview of INMMC Workshop 409

Figure 27. A block diagram of the nonlinear network measurement system (NNMS). Adapted
from Verspecht and Van Esch [113].

collector voltage. During the measurement procedure, set to be zero, except the stimulus a11. This corre-
500 randomly chosen settings were used. The peak sponds to a 50-⍀ load seen by all harmonics and a
amplitude of a11 was 0.5–5.7 V, the base current was 10-⍀ load seen by the fundamental at the output. It
0.12– 6 mA, and the collector voltage was 2–5 V. can be recognized that the function of 兩F21兩 is very
Once the values of F, G, and H at all sampled large- smooth, being very small for a zero biasing current
signal settings points were measured, a set of ANNs and increasing for increasing values of the base cur-
was trained to fit the data. rent and stimulus a11 as expected.
The values of F, G, and H at one particular setting Harmonic distortion information is also present in
of a11, base current, and collector voltage were mea- the model, which is illustrated in Figure 29. Under the
sured by keeping the large-signal settings constant same matching conditions as those used in Figure 28,
while sending small-signal deviations of a12, a13, a14,
a(10)21, a22, a23, and a24 toward the DUT and measur-
ing all a and b values under consideration. These
small-signal deviations are generated by synth 2 (see
Fig. 27). Six realizations of each deviation are per-
formed, each time randomizing the phase relationship
between the synth 1 fundamental signal and the signal
of synth 2. The values for all F, G, and H for that
particular large-signal setting were found by perform-
ing a least squares error fit on the measured data. For
all 500 large-signal settings, this implies a total of
21,000 measurements, which took about 4 h.
Figure 28 gives an idea about the behavior of the
nonlinear scattering functions by plotting the magni-
tude of F21 versus the base current and Re(a11) with a Figure 28. The magnitude of F21 as a function of Re(a11)
constant collector voltage of 4.5 V. It should be noted, and the base current (Ibase) with a constant collector voltage
however, that F21 can be interpreted as the value of of (Vcollector) of 4.5 V. Adapted from Verspecht and Van
b(10)21, which is the fundamental output if all ajk are Esch [113].
410 Beyer
all harmonic distortion information is present in F21,
F22, and F23, which is evaluated at a specific bias
point. In this example, this information is shown up to
the third harmonic.
It is my experience that the model tends to behave
abnormally for small input powers, in the sense that
the amplitude does not roll off with the expected
constant slope. This is an artifact of the neural net,
which, by construction, does not respect the typical
polynomial asymptotic behavior if stimulus a11 goes
to zero, although this fact should not be a problem for
typical power amplifier design, which is prescribed to
work at a rather high input power.
In order to validate this extracted model, it was
integrated into an HB simulator and comparisons
were made between actual measured and modeled
data. One example of this is given by Figure 30. This
figure plots an overlay of the measured and modeled
current and voltage waveforms at the transistor signal
ports for one point in the measured range. The reflec-
tion coefficient of the fundamental seen by the col-
lector has a magnitude of 0.63 at an angle of 135°.
The reflection coefficients of the second, third, and
fourth harmonic are significant. The modeled output
power is 419 mW with a PAE of 76%, while the
measured output power is 392 mW with a measured
PAE of 71%. The model was validated in a similar
way over the whole range. It predicts the PAE and
output power with acceptable accuracy in most of the
validation range.
In summary, this subsection shows that nonlinear
scattering functions can be accurately measured with
an automated setup containing a NNMS. The corre-
sponding model describes the behavior of the hard-
nonlinear microwave component under a large-signal
one-tone excitation, where relatively small harmonics
may be present and can be integrated in a commercial
HB simulator.
Figure 29. The results of a harmonic distortion analysis at
the biasing conditions Ibase ⫽ 5 mA and Vcollector ⫽ 4.5 V.
Adapted from Verspecht and Van Esch [113].
Figure 30. The results of modeled and measured current
and voltage shapes as a function of time. Adapted from
Verspecht and Van Esch [113].
There are mainly two reasons why one can expect
this approach to be more simple and accurate. First,
one has the advantage that the model parameters are
directly extracted from large-signal load-pull mea-
surements, which are very close to the actual working
conditions of the device. This implies that the behav-
ior of the model in the simulator will be consistent
with the measured harmonic load-pull behavior. Clas-
sical modeling approaches are based upon many
small-signal and DC measurements, which are far
from the actual operating conditions. This often re-
sults in inconsistency between measured and modeled
load-pull behavior.
Second, all parasitic effects are automatically in-
cluded in the black-box model, while all parasitic
effects have to be explicitly identified with the other
models. This makes the nonlinear scattering functions
really technology independent.
A drawback of the method is, of course, that the
model will only be valid for one-tone excitation with
a frequency corresponding to the frequency used to
extract the model.
VI. CONCLUSIONS
The history of the INMMC workshop, which took
place between 1990 and 1998 in Duisburg, Germany,
as presented here is admittedly selective with respect
to both the four comprehensive articles chosen and the
specific manuscripts briefly discussed. It would be
impossible to organize this article otherwise because
of the wide scope of the field of nonlinear network
design, especially in regard to the monolithic integra-
tion technique on which this workshop is focused. It
was shown that new design techniques together with
improved thermal design, model description, and
measurement techniques are necessary to meet the

steadily growing qualitative and quantitative require-
ments of technical specifications. In addition, it was
concluded that there should be a search for new de-
vices for applications in power amplifiers for base
station transmitters for cellular telephone systems,
high definition TV transmitters, and power modules
for phased-array radars. Those devices will become
increasingly interesting, because they are particularly
attractive for applications that require high RF output
power and operation at elevated temperature.
ACKNOWLEDGMENTS
The author thanks Profs. Robert J. Trew, Case Western
Reserve University (Cleveland, OH), Christopher M. Snow-
den, The University of Leeds (Leeds, UK), Stephen A.
Maas, Nonlinear Technologies, Inc. (Long Beach, CA), and
Drs. Dominique Schreurs, K.U. Leuven (Leuven, Belgium),
and Jan Verspecht, Agilent Technologies Belgium S.A./
N.V., NMDG (Bornem, Belgium), for their fruitful discus-
sion of this topic and for providing the copyrights of their
workshop contributions. The author’s special thanks belong
to Dipl.-Ing. Birgit Neuhaus for her discussion contributions
and helping to organize this manuscript.
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meterwave Circuits (INMMC’96), Gerhard-Mercator-
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41. J.M. Collantes, D. Barataud, J.J. Raoux, and R. Quéré,
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BIOGRAPHY
Professor Dr.-Ing. Adalbert Beyer re-
ceived his diploma in 1964 and the Dr.-Ing.
(Ph.D.) degree in 1969, both in electrical
engineering. After occupying several indus-
trial and academic positions, he joined Duis-
burg University as a Professor of electrical
engineering and millimeter-wave techniques.
He is also a founding member of the Sonder-
forschungsbereich 254. His areas of research
interest are in field theory, microwave and millimeter-wave tech-
niques, and remote sensing. In 1987 and 1990 he was a visiting
Overview of INMMC Workshop 417
in the frequency domain, Digest of the 4th Interna-
tional Workshop on Integrated Nonlinear Microwave
and Millimeterwave Circuits (INMMC’96), Gerhard-
Mercator-University, Duisburg, Germany, October
9 –11, 1996, pp. 58 – 63.
113. J. Verspecht and P. Van Esch, Accurately charac-
terizing hard nonlinear behavior of microwave com-
ponents with the nonlinear network measurement
system: Introducing “nonlinear scattering func-
tions,” Digest of the 5th International Workshop on
Integrated Nonlinear Microwave and Millimeter-
wave Circuits (INMMC’98), Gerhard-Mercator-
University, Duisburg, Germany, October 1–2, 1998,
pp. 17–26.
114. A. Mallet, D. Barataud, F. Blache, J.M. Nebus, and
J.P. Villotte, Very high efficiency (84%) GAAs MES-
FETs for radiomobile applications, Digest of the 4th
International Workshop on Integrated Nonlinear Mi-
crowave and Millimeterwave Circuits (INMMC’96),
Gerhard-Mercator-University, Duisburg, Germany,
October 9 –11, 1996, pp. 64 – 69.
Professor at the University of Ottawa, Canada, and the University
of Texas, Austin, TX, respectively. Dr. Beyer was also a visiting
Professor at the Technical University of Warsaw, Poland, in 1996.
He is author or coauthor of several books and patents and more than
300 technical articles. Professor Beyer is a Fellow of IEEE and a
member of the IEEE MTT Symposia Technical Program Commit-
tees, MTT-S Education Committee, and MTT-S Technical Com-
mittees MTT-13 and MTT-15. He is an Associate Editor of the
International Journal of RF and Microwave Computer-Aided En-
gineering and a member of the editorial board of several other
scientific journals.