SkEE 1063

Electronic Devices
MOSFET
Assoc. Prof. Ir. Dr. Rubita Sudirman
Room : P19a 05-01-07/ 01-01-13
Contact : +(60) (07) 55 57022/ 57187
Email : rubita@fke.utm.my
http://rubita.fke.utm.my/
 Introduction to MOSFET
•MOSFET - Metal Oxide Semiconductor Field Effect Transistor
•Main different from BJT – there is no actual pn junction as the p and n
materials are insulated from each other. MOSFETs are static sensitive
devices and must be handled by appropriate means.
•There are depletion MOSFETs (D-MOSFET) and enhancement
MOSFETs (E-MOSFET).
•Note the difference in construction.
•The E-MOSFET has no structural channel.

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 MOSFET
 Two basic types of MOSFETs:
i. Depletion MOSFET (D-MOSFET)
ii. Enhancement MOSFET (E-MOSFET)

 MOSFET has no p-n junction structure

 The Gate of the MOSFET is insulated from the
channel by a Silicon Dioxide (SiO2) layer
 Because of the insulated gate, MOSFETs are
sometimes called IGFETs

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Basic Construction of MOSFET
 Metal terminal
 Oxide insulator
 Semiconductor
material creating
the source-drain
channel

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 E-MOSFET Operation (N-Channel)

E-MOSFET
Construction
(n-channel)

•No conducting channel between Drain and Source

•The substrate extends completely to the SiO2 layer
•Apart from the absence of N-type channel between Drain and Source, the
construction is similar to that of a D-MOSFET
•A channel is induced by applying a VGS greater than the threshold value, VGS(th)
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 E-MOSFET Operation (N-Channel)

•The positive gate voltage attracts electron from the substrate to the region
along the insulating layer
•the gate is made sufficiently positive, enough electrons will be pulled up
from the substrate
•An N-channel starts to form
•The channel does not form uniformly but rather begins to form on the drain
side
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 E-MOSFET Operation (n-channel)

• As the gate voltage increases, the channel length also increases

• Finally, the gate voltage increases to the point (VGS(th)) where the channel
reaches the source, and conduction begins
• The conductivity of the channel is enhanced by increasing the VGS
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 E-MOSFET Drain Characteristic

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 E-MOSFET Transfer Characteristic

•The curve is on the enhancement region

ID = 0A when VGS = 0V and ID = 0A until VGS reaches the threshold value
•Has no IDSS parameter
I D ( on )
ID = k(VGS – VGS(th))2 where k
(VGS  VGS (th ) ) 2
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 E-MOSFET Schematic Symbols

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 Transfer characteristics for an n-channel E-MOSFET from the drain characteristics
with VT = 2 V and k = 0.278 x 10-3 A/V2.

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 Transfer characteristics for an p-channel E-MOSFET from the drain characteristics
with VT = 2 V and k = 0.278 x 10-3 A/V2.

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 2N4351 Motorola n-channel enhancement-type MOSFET.

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