RBV5000 - RBV5010 SILICON BRIDGE RECTIFIERS

RBV25
PRV : 50 - 1000 Volts
3.9 ± 0.2
Io : 50 Amperes C3 30 ± 0.3
4.9 ± 0.2

∅ 3.2 ± 0.1
FEATURES :

20 ± 0.3
* High current capability
* High surge current capability

11 ± 0.2
* High reliability
* Low reverse current + ~ ~
* Low forward voltage drop

17.5 ± 0.5
13.5 ± 0.3
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
1.0 ± 0.1
* Very good heat dissipation

MECHANICAL DATA :
* Case : Reliable low cost construction 7.5 7.5 2.0 ± 0.2
10
utilizing molded plastic technique ±0.2 ±0.2 ±0.2 0.7 ± 0.1

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per Dimensions in millimeters
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RBV RBV RBV RBV RBV RBV RBV
RATING SYMBOL UNIT
5000 5001 5002 5004 5006 5008 5010
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°C IF(AV) 50 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 400 Amps.
2
Current Squared Time at t < 8.3 ms. It 660 A2S
Maximum Forward Voltage per Diode at IF = 25 Amps. VF 1.1 Volts
Maximum DC Reverse Current Ta = 25 °C IR 10 µA
at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA
Typical Thermal Resistance (Note 1) R θJC 1.5 °C/W
Operating Junction Temperature Range TJ 10 °C
Storage Temperature Range TSTG - 40 to + 150 °C

Notes :
1. Thermal Resistance from junction to case w ith units mounted on heatsink. UPDATE : AUGUST 3, 1998
 RATING AND CHARACTERISTIC CURVES ( RBV5000 - RBV5010 )

FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK

RECTIFIED CURRENT FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT CURRENT

PEAK FORWARD SURGE CURRENT,

60 600

50 500

40 400 TJ = 50 °C

AMPERES
AMPERES

30 300

20 200

8.3 ms SINGLE HALF SINE WAVE

10 100
JEDEC METHOD
P.C. Board Mounted with
SINE WAVE R-Load
0 0
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100

CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS

PER DIODE PER DIODE
100 10

TJ = 100 °C
FORWARD CURRENT, AMPERES

REVERSE CURRENT,
MICROAMPERES

10 1.0

Pulse Width = 300 µs

1 % Duty Cycle

1.0 0.1 TJ = 25 °C

TJ = 25 °C
0.1 0.01
0 20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.