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Design Guidelines
Design procedure
Conclusions
9/27/2012 Page 2
Typical DC power supply system for Telecom
equipment
SCR BC SMR BC
CONTROL &
MONITORING
UNITS
Design procedure
Conclusions
9/27/2012 Page 10
Typical Technical Specification Requirements
for a 48V /2kW Telecom Rectifier: AC input
Design Procedure
Conclusions
9/27/2012 Page 15
Principle Block Schematic of a
Switch Mode Telecom Rectifier
Isolated HV DC/DC Stage
85…3000V
SR-IC
Driver
53.5V
AC
HBr- SR-IC
Driver Driver
I
V
9/27/2012 Page 16
Inside a Telecom Rectifier
9/27/2012
Designing a 2kW CCM PFC
for Telecom Applications
85…3000V
SR-IC
Driver
53.5V
AC
HBr- SR-IC
Driver Driver
1 – Rectifying Bridge
2 – Filter Inductor
3 – Output Capacitor
4 – Boost Switch
5 – SiC Diode
6 – Bypass Diode
9/27/2012 Copyright © Infineon Technologies 2011. All rights reserved. Page 19
Input Parameters
Parameter Value
Circuit Design
Experimental Results
2 2
I BR = I in.avg = I in..rms ⋅ 10.7A
π
Power dissipation:
PBR = 2 ⋅ V f . BR ⋅ I BR 21.4W
Current ripple:
I HF = 20% ⋅ I PK 3.2A
Pout . max
Uout.min=300V ⋅
U in.min ∆Uout =4%
∆U out = = 15V
2π ⋅ f ac ⋅ Cout
9/27/2012 Copyright © Infineon Technologies 2011. All rights reserved. Page 25
4 - Boost Switch
CoolMOS™ C6 CoolMOS™ C6
∆Ex65kHz=1.3W
Tj=125°C
Optimum
Rds_on~200mΩ
For each switch
Switching losses
RTH,JC RTH,CA
Tj<125°C
Tamb=70°C
Case
RTH,CA < 5 °C/W
9/27/2012 Copyright © Infineon Technologies 2011. All rights reserved. Page 29
5 - Boost Diode
Sw. Losses
Thin-wafer technology G2
QC
Wire bond G3
bond metal
G5 Cond. Losses
Schottky contact
Drift layer
Vf
SiC Substrate R bulk
η% Comparative Efficiency
Backside metal
Losses Calculation
Experimental Results
@Vin=230Vac Pbr=15.4W
Pind=10.1W
Psw=8.7W
Pdi=8.6W
@Vin=230Vac
η10%= 97.9%
η20%= 98.2%
@Vin=90Vac
P.max=850W η50%= 98.1%
η100%= 97.9%
Losses Calculation
Experimental Results
CoolMOS™ P6
CoolMOS™ C6 CoolMOS™ P6
CoolMOS™ C6
THS 60°C
fsw 65kHz
Rg,ext 10Ω
CoolMOS™ P6
CoolMOS™ C6
CoolMOS™ P6
CoolMOS™ C6
THS 60°C
fsw 65kHz
Rg,ext 10Ω
Design procedure
Conclusions
9/27/2012 Page 39
Principle Block Schematic of a
Switch Mode Telecom Rectifier
85…3000V
SR-IC
Driver
53.5V
AC
HBr- SR-IC
Driver Driver
9/27/2012 Page 40
HV DC/DC Stage: choice of the topology
Figure of merit ZVS PF FB vs. HB LLC
10
4
Phase Shift FB
3 LLC HB
9/27/2012
ZVS Phase Shift Full Bridge
free-wheeling phase
0A
charge Coss of A and discharge Coss of B primary current
changes direction
commutation to body diode of B
Main Transformer
FB HV MOSFETs
Resonant Choke
Output Choke
Output Capacitance
Synchronous Rectification
Topology
Power MOSFETs
board description
Fsw=100kHz
Main trafo
Synchronous rectification
Lr=res. inductance
Full Bridge
30
Center Tap
25
Current Doubler_1
20 Current Doubler_2
15
10
0
Pcu_sec Ptr_tot Pcu_Lout Pcore_Lout Ptotal_Lout Ptotal_magnetics
Ae=201mm²
PQ/40/40 core Ve=20500mm³
Primary turns Np
20
ratio of turns: 20 : 4 : 4
Rudolf-Winkel-Str. 6
37079 Göttingen
Germany
dimensions in [mm]
9/27/2012 Page 52
Losses spread on HV MOSFETs in a Soft
Switching topology (fsw=100Khz & 200Khz)
Primary mosfets losses
Primary mosfets @Pmax
losses @10%Pmax 100Khz (P=10.52W)
100Khz (P=0.589W)
16% 3.8%
(0.09W) 13.7% (0.4W)
13.1% Conduction Losses Conduction Losses
(1.44W)
(0.07W) Turn on losses Turn on losses
68.4%
Turn off losses 80% Turn off losses
(0..4W)
Driving losses
(8.4W) Driving losses
Primary mosfets
Qg Primary mosfets
losses @Pmax
Rds,on
losses @10% Pmax 200Khz (P=12.64W)
200Khz (P=1.05W)
6.4%
8.2% 5.4% (0,056W) (0.8W)
22.8%
(0,09W 9.7%
Conduction Losses
(2.88W) Conduction Losses
(0,1W)
76.7% Turn on losses
66.4% Turn on losses
(0.8W) 4.4% (8.4W) Turn off losses
Turn off losses (0.88W)
Driving losses
Driving losses
10% VDS
t1 t2 t3
td_off = t1 -> t2
td_Vdstrans = t2 -> t3
td_total = t1 -> t3
Reverse
recovery
current
VGS,2
Q1
IDS,1
Cr Lr
IDS2
Id,2XRds,on=0 Reverse recovery
Body diode can’t turn off completely current Lm
VDS,2 Q2
•Over-shoot of VDS
VDS,1 •Extremely high dv/dt and di/dt
9/27/2012 Page 56
Completely Reverse Recovery MOSFET
Above specified current level, the body diode is completely reverse recovered
9/27/2012 Page 57
Un-Completely Reverse Recovery MOSFET
Voltage/current ringing
• CFD2 shows less Qrr in comparison to CFD and comparable competitor products
BENEFITS:
• less stress on MOSFET during commutation
• makes device suitable for soft switching application
9/27/2012 Page 61
Kool-mu 77894 resonant choke
9/27/2012 Page 62
Output Choke
where
9/27/2012 Page 63
MPP 55083 Output choke
9/27/2012 Page 64
Output Capacitance
Final choice:
N=6 470µF, 63V, KZE capacitors
9/27/2012 Page 65
Synchronous Rectification
85…3000V
SR-IC
Driver
53.5V
AC
HBr- SR-IC
Driver Driver
9/27/2012 Page 66
Synchronous Rectification Possible Applications
11/03/2010
SMPS - What is be the trend for the future?
Server Power supply example
Up to now
…
EFFICIENCY
Higher efficiency
Smaller heatsinks
Package Shrink
Copyright ©
Infineon
Set date Page 70
Technologies 2011.
All rights reserved.
What is synchronous rectification???
Replacement of the diodes by MOSFETs on the
secondary side of a SMPS
Copyright ©
Infineon
Set date Page 72
Technologies 2011.
All rights reserved.
Analyzing the SR turn-off behavior
UDSpeak dv I C (t )
VDS =
reverse
Gate
recovery dt Coss
turn-on
behavior
VT
Iinit VDS
IDS
VG
Free
oszillation
VGS
VD
Vind
Qrr* VGS
Irev_peak
di VDS (t ) − VT
=
tD tQrr*+Qoss dt L
tramp
Calculation of power losses in SR (I)
Conducting losses
2
Pv _ cond = I RMS ⋅ RDS ( on )
Gate losses
Pv _ gate = Qg ⋅ U g ⋅ f sw
PV _ BD _ cond = U D ⋅ I D ⋅ t BD _ on ⋅ f sw
27.09.2012
Development of a power-loss model
Upeak
EC = 1 ⋅ C ⋅ V 2
I comm
UDS
2
Utrafo
Qoss ID time
di/dt=const Qrr*
Irev_ peak
EL = 1 ⋅ L ⋅ I 2
tIpeak tUpeak 2
trev
Synchronous Rectification Losses
Summary
Conducting losses
Conduction
2
Pv _ cond = I RMS ⋅ RDS ( on )
Body diode conduction loss
PV _ BD _ cond = VD ⋅ I D ⋅ t BD _ on ⋅ f sw
Gate losses
Pv _ gate = Qg ⋅Vg ⋅ f sw
Switching
Turn-off – reverse recovery losses
1.50
1.00
0.50
0.00
10 30 50
output currrent [A]
Set date
The key for further performance improvement
40
Optimum Rds(on) ~ 4.5 mΩ 2xIPP110N20N3 G
(Rds(on)max = 11 mΩ)
30
20 conduction losses
dominated
10
0
0 2 4 6 8 10 12 14 16 18 20
Copyright ©
Infineon
Set date Page 79
Technologies 2011.
All rights reserved.
Turn-off voltage overshoot
VDS overshoot
VDS
VGS
di/dt
40 nC 80 V
Overshoot
Qrr
30 nC 60 V
20 nC Qrr 40 V
Overshoot
10 nC Poly. (Qrr) 20 V
Poly. (Overshoot)
0 nC 0V
0 ns 20 ns 40 ns 60 ns 80 ns 100 ns 120 ns 140 ns 160 ns
Body Diode On Time
Lower body diode on time -> lower Qrr -> lower overshoot
-> lower losses -> better efficiency
Qrr dependencies are complex: Qrr increases with tBody and di/dt
Parallel schottky diode will reduce Qrr but increase leakage current
Infineon new 40V introduce Schottky-like diode technologies
27.09.2012
Impact of the package
Copyright ©
Infineon
Set date Page 82
Technologies 2011.
All rights reserved.
Highest Efficiency
package contribution
The lower the product resistance the higher the package contribution
Set date
Highest Efficiency
Reduction of FOM
350
FOM [mOhm x nC]
300
250
200
150
100 TO220
50 SuperSO8
0
FOM(Qg) FOM(Qoss)
Set date
Highest Efficiency
-Lower
92
package
efficiency [%]
resistance
91 Higher efficiency through
lower power losses
90
-Less
parasitics
BSC047N08NS3
89
IPP057N08N3
-Lower turn- 88
10 20 30 40 50
off losses
output current [A]
Conditions: 12V - 600W server PSU, 100kHz switching frequency, half bridge, current doubler rect.
Set date
Outstanding Switching Behavior
LOUT
High side switch
Transformer
COUT
GND
power-commutation loop
Low side switch
90
80
10V reduction
UDS
VDS
voltage overshoot
overshoot [V]
70 voltage overshoot
60
50
40
10 20 30 40 50
output current [A]
Set date
Summary
Synchronous Rectification brings out outstanding power savings.
Design procedure
Conclusions
9/27/2012 Page 89
PFC
85…3000V
SR-IC
Driver
53.5V
AC
HBr- SR-IC
Driver Driver
9/27/2012 Page 90
PFC efficiency plots
@Vin=230Vac
η10%= 97.9%
η20%= 98.2%
9/27/2012 Page 91
ZVS Phase Shift Full Bridge with Synchronous
Rectification
85…3000V
SR-IC
Driver
53.5V
AC
HBr- SR-IC
Driver Driver
9/27/2012 Page 92
ZVS Phase Shift Full Bridge
IFX reference design
main components
full bridge MOSFETs: IFX CoolMOSTM IPW65R080CFD
main transformer: Kaschke Components GmbH PQ40/40 ferrite core (center tap)
97.5
97
96.5
EFFICIENCY [%]
96
95.5
95
94.5
94
0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200
OUTPUT POWER [W]
9/27/2012 Page 94
Target Efficiency achieved!
9/27/2012 Page 95