You are on page 1of 15

Data Sheet

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A


General Description Features

The AS358/358A consist of two independent, high · Internally Frequency Compensated for Unity
gain and internally frequency compensated operational Gain
amplifiers, they are specifically designed to operate · Large Voltage Gain: 100dB (Typical)
from a single power supply. Operation from split · Low Input Bias Current: 20nA (Typical)
power supply is also possible and the low power sup-
· Low Input Offset Voltage: 2mV (Typical)
ply current drain is independent of the magnitude of
· Low Supply Current: 0.5mA (Typical)
the power supply voltages. Typical applications
include transducer amplifiers, DC gain blocks and · Wide Power Supply Voltage:
most conventional operational amplifier circuits. Single Supply: 3V to 36V
Dual Supplies: ± 1.5V to ± 18V
The AS358/358A series are compatible with industry · Input Common Mode Voltage Range Includes
standard 358. AS358A has more stringent input offset Ground
voltage than AS358. · Large Output Voltage Swing: 0V to VCC -1.5V

The AS358 is available in DIP-8, SOIC-8, TSSOP-8


Applications
and MSOP-8 packages, AS358A is available in DIP-8
and SOIC-8 packages.
· Battery Charger
· Cordless Telephone
· Switching Power Supply

SOIC-8 DIP-8 TSSOP-8 MSOP-8

Figure 1. Package Types of AS358/358A

Nov. 2009 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

1
Data Sheet

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A


Pin Configuration

M/G/MM Package P Package


(SOIC-8/TSSOP-8/MSOP-8) (DIP-8)

OUTPUT 1 1 8 VCC
OUTPUT 1 1 8 VCC
INPUT 1- 2 7 OUTPUT 2
INPUT 1- 2 7 OUTPUT 2

INPUT 1+ 3 6 INPUT 2- INPUT 1+ 3 6 INPUT 2-

GND 4 5 INPUT 2+ GND 4 5 INPUT 2+

Figure 2. Pin Configuration of AS358/358A (Top View)

Functional Block Diagram


VCC

6µA 4µA 100µA

Q5
Q6

Q2 Q3 Cc Q7
- Q1 Q4
Rsc
INPUTS
OUTPUT

+
Q11 Q13
Q10 Q12
Q8 Q9 50µA

Figure 3. Functional Block Diagram of AS358/358A


(Each Amplifier)

Nov. 2009 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

2
Data Sheet

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A


Ordering Information

AS358 -
E1: Lead Free
Circuit Type G1: Green
TR: Tape and Reel
Blank: Tube
Blank: AS358
A: AS358A Package
M: SOIC-8
P: DIP-8
G: TSSOP-8
MM: MSOP-8

Temperature Part Number Marking ID


Package Packing Type
Range Lead Free Green Lead Free Green
AS358M-E1 AS358M-G1 AS358M-E1 AS358M-G1 Tube
AS358MTR-E1 AS358MTR-G1 AS358M-E1 AS358M-G1 Tape & Reel
SOIC-8 -40 to 85oC
AS358AM-E1 AS358AM-G1 AS358AM-E1 AS358AM-G1 Tube
AS358AMTR-E1 AS358AMTR-G1 AS358AM-E1 AS358AM-G1 Tape & Reel
AS358P-E1 AS358P-G1 AS358P-E1 AS358P-G1 Tube
DIP-8 -40 to 85oC
AS358AP-E1 AS358AP-G1 AS358AP-E1 AS358AP-G1 Tube
AS358G-E1 AS358G-G1 EG3A GG3A Tube
TSSOP-8 -40 to 85oC
AS358GTR-E1 AS358GTR-G1 EG3A GG3A Tape & Reel
AS358MM-E1 AS358MM-G1 AS358MM-E1 AS358MM-G1 Tube
MSOP-8 -40 to 85oC
AS358MMTR-E1 AS358MMTR-G1 AS358MM-E1 AS358MM-G1 Tape & Reel

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.

Nov. 2009 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

3
Data Sheet

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A


Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Power Supply Voltage VCC 40 V
Differential Input Voltage VID 40 V
Input Voltage VIC -0.3 to 40 V
DIP-8 830
SOIC-8 550
Power Dissipation (TA=25oC) PD mW
TSSOP-8 500
MSOP-8 470
Operating Junction Temperature TJ 150 oC

Storage Temperature Range TSTG -65 to 150 o


C
Lead Temperature (Soldering, 10 Seconds) TLEAD 260 o
C

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.

Recommended Operating Conditions


Parameter Symbol Min Max Unit
Supply Voltage VCC 3 36 V
Ambient Operating Temperature Range TA -40 85 oC

Nov. 2009 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

4
Data Sheet

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A


Electrical Characteristics
Limits in standard typeface are for TA=25oC, bold typeface applies over -40oC to 85oC (Note 2), VCC=5V, GND=0V, unless
otherwise specified.
Parameter Symbol Test Conditions Min Typ Max Unit
2 5
AS358
VO=1.4V, RS=0Ω, 7
Input Offset Voltage VIO mV
VCC=5V to 30V 2 3
AS358A
5
Average Temperature Coeffi- ∆VIO/∆T TA=-40 to 85oC 7 µV/oC
cient of Input Offset Voltage
20 200
Input Bias Current IBIAS IIN+ or IIN-, VCM=0V nA
200
5 30
Input Offset Current IIO IIN+ - IIN-, VCM=0V nA
100
Input Common Mode Voltage VIR VCC=30V 0 VCC -1.5 V
Range (Note 3)
TA=-40 to 85oC, RL=∞, VCC=30V 0.7 2
Supply Current ICC mA
o
TA=-40 to 85 C, RL=∞, VCC=5V 0.5 1.2
85 100
Large Signal Voltage Gain GV VCC=15V, VO=1V to 11V, RL ≥ 2kΩ dB
80
Common Mode Rejection 60 70
CMRR DC, VCM=0V to (VCC-1.5)V dB
Ratio 60
Power Supply Rejection 70 100
PSRR VCC=5V to 30V dB
Ratio 60
Channel Separation CS f=1kHz to 20kHz -120 dB
20 40
Source ISOURCE VIN+=1V, VIN-=0V, VCC=15V, VO=2V mA
20
Output Current 10 15
VIN+=0V, VIN-=1V, VCC=15V, VO=2V mA
Sink ISINK 5
VIN+=0V,VIN-=1V,VCC=15V, VO=0.2V 12 50 µA
Output Short Circuit Current ISC VCC=15V 40 60 mA
to Ground
26
VCC=30V, RL=2kΩ
26
VOH V
27 28
Output Voltage Swing VCC=30V, RL=10kΩ
27
5 20
VOL VCC=5V, RL= 10kΩ mV
30
Thermal Resistance DIP-8 53
θJC oC/W
(Junction to Case) SOIC-8 78
Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.

Nov. 2009 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

5
Data Sheet

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A


Electrical Characteristics (Continued)
Note 3: The input common-mode voltage of either input signal voltage should not be allowed to go negatively by
more than 0.3V (at 25oC). The upper end of the common-mode voltage range is VCC-1.5V (at 25oC), but either or
both inputs can go to +36V without damages, independent of the magnitude of the VCC.

Typical Performance Characteristics

15 20

18

16
Input Voltage (+VDC)

14
Input Current (nA)

10

NEGATIVE 12
POSITIVE
10

8
5
6

0 0
0 5 10 15 -25 0 25 50 75 100 125
Power Supply Voltage (+VDC) o
Temperature ( C)

Figure 4. Input Voltage Range Figure 5. Input Current

1.0 120

0.9

0.8
105
0.7
Voltage Gain (dB)
Supply Current (mA)

0.6

90 RL=2KΩ
0.5
RL=20KΩ
0.4

0.3
75
0.2

0.1

0.0 60
0 5 10 15 20 25 30 35 40 0 8 16 24 32 40

Supply Voltage (V) Power Supply Voltage (V)

Figure 6. Supply Current Figure 7. Voltage Gain

Nov. 2009 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

6
Data Sheet

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A


Typical Performance Characteristics (Continued)

120 4
110
3

Voltage (V)
100

Output
90 2
80
1
Voltage Gain (dB)

70
0
60 3
50
2

Voltage (V)
40

Input
30 1
20
0
10

0
1 10 100 1k 10k 100k 1M 0 4 8 12 16 20 24 28 32 36 40
Frequency (Hz)
Time (µs)

Figure 8. Open Loop Frequency Response Figure 9. Voltage Follower Pulse Response

20
800

700

600 15
Output Voltage (mV)

Output Swing (V)

500

400 10

300

200 5

100

0
1k 10k 100k 1M
0 4 8 12 16 20
Time (µs) Frequency (Hz)

Figure 10. Voltage Follower Pulse Response Figure 11. Large Signal Frequency Response
(Small Signal)

Nov. 2009 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

7
Data Sheet

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A


Typical Performance Characteristics (Continued)

8 10
Output Voltage Referenced to Vcc (V)

Output Voltage (V)


1
5

4 VCC=5V VCC=15V

3
0.1

0 0.01
0.1 1 10 100 1E-3 0.01 0.1 1 10 100

Output Source Current (mA) Output Sink Current (mA)

Figure 12. Output Characteristics: Current Sourcing Figure 13. Output Characteristics: Current Sinking

100

90

80

70
Output Current (mA)

60

50

40

30

20

10

0
-25 0 25 50 75 100 125
o
Temperature ( C)

Figure 14. Current Limiting

Nov. 2009 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

8
Data Sheet

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A


Typical Application

R1

Opto
Isolator R6
- VCC
1/2
AS358/A
Battery
AC SMPS + GND Pack
Line
R7

R3 R4 R5

Current - VCC
R2
Sense 1/2
AS358/A
+
GND
AZ431
R8

Figure 15. Battery Charger

R1 910K
R1 100k
+V1
R2 100K +
- VCC +V2
R2 100k R5 1/2 AS358/A VO
1/2 AS358/A 100k
R3 91K -
VO R3 100k
VIN(+) +
+V3 R6 100k
RL
+V4
R4 100k

Figure 16. Power Amplifier Figure 17. DC Summing Amplifier

Nov. 2009 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

9
Data Sheet

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A


Typical Application (Continued)

R1 100k R2 1M VCC

C1 + +
R3 R1
0.1µF 2V 2V R2
- 2K 2K
CO VO - -
1/2 AS358/A

+ RB RL -
6.2k 10k
CIN
R3 1/2 AS358/A
1M R4 100k
AC
VCC + I1 I2
R5 R4
C2 100k AV=1+R2/R1 3K 1mA
10µF
AV=11 (As shown)

Figure 18. AC Coupled Non-Inverting Amplifier Figure 19. Fixed Current Sources

R1 1M

C1 0.01µF

0.001µF R2 100k
R1 16K R2 16k
- VIN +
C2 1/2 AS358/A VO
1/2 AS358/A VO 0.01µF
- R3
+ 100k

R3 100k R5 100k VO
VCC R4
0 fO 100k
R4 fO=1kHz
100k Q=1
AV=2

Figure 20. Pulse Generator Figure 21. DC Coupled Low-Pass Active Filter

Nov. 2009 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

10
Data Sheet

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A


Mechanical Dimensions

DIP-8 Unit: mm(inch)

0.700(0.028)
7.620(0.300)TYP
1.524(0.060) TYP

6° 6°

3.200(0.126)
3.710(0.146) 3.600(0.142)
4.310(0.170) 4°

0.510(0.020)MIN
3.000(0.118)
3.600(0.142)

0.204(0.008)
0.254(0.010)TYP 0.360(0.014)
0.360(0.014) 2.540(0.100) TYP 8.200(0.323)
0.560(0.022) 9.400(0.370)
0.130(0.005)MIN

6.200(0.244)
R0.750(0.030) 6.600(0.260)

Φ3.000(0.118)
Depth
0.100(0.004)
0.200(0.008)
9.000(0.354)
9.400(0.370)

Note: Eject hole, oriented hole and mold mark is optional.

Nov. 2009 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

11
Data Sheet

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A


Mechanical Dimensions (Continued)

SOIC-8 Unit: mm(inch)

4.700(0.185) 0.320(0.013)
5.100(0.201) 1.350(0.053)
7° 1.750(0.069)

7° 8°
0.675(0.027)
D
0.725(0.029) 5.800(0.228)
1.270(0.050) 6.200(0.244)
TYP
D
20:1
0.100(0.004) φ0.800(0.031)
R0.150(0.006)

0.300(0.012)
0.200(0.008)



1.000(0.039)
3.800(0.150)
4.000(0.157)

0.190(0.007) 1°
0.330(0.013) 0.250(0.010) 5°
0.510(0.020)
0.900(0.035) R0.150(0.006)
0.450(0.017)
0.800(0.031)

Note: Eject hole, oriented hole and mold mark is optional.

Nov. 2009 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

12
Data Sheet

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A


Mechanical Dimensions (Continued)

TSSOP-8 Unit: mm(inch)

2.900(0.114) SEE DETAIL A


3.100(0.122)

0.050(0.002) 0.090(0.004)
1.200(0.047)
0.150(0.006) MAX 0.200(0.008)

0.800(0.031)
1.050(0.041)

12 °
TOP & BOTTOM

R0.090(0.004)

R0.090(0.004)
4.300(0.169)
4.500(0.177)
6.400(0.252)

GAGE PLANE
TYP



0.400(0.016)

0.450(0.018)
SEATING 0.750(0.030)
PLANE

0.190(0.007) 0.250(0.010) 1.000(0.039)


REF
0.650(0.026)

0.300(0.012) TYP
TYP

1.950(0.077)
TYP
DETAIL A

Note: Eject hole, oriented hole and mold mark is optional.

Nov. 2009 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

13
Data Sheet

LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A


Mechanical Dimensions

MSOP-8 Unit: mm(inch)

0.300(0.012)TYP
P
0.650(0.026)TYP 0.150(0.006)TY

0.410(0.016)
0.650(0.026)

2.900(0.114)
3.100(0.122)
4.700(0.185)
5.100(0.201)


6° 0.760(0.030)
0.970(0.038)

0.800(0.031)
1.200(0.047)
0.200(0.008)
0.000(0.000)

2.900(0.114)
3.100(0.122)

Note: Eject hole, oriented hole and mold mark is optional.

Nov. 2009 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

14
BCD Semiconductor Manufacturing Limited

http://www.bcdsemi.com

IMPORTANT NOTICE
IMPORTANT NOTICE

BCD Semiconductor
BCD Semiconductor Manufacturing
Manufacturing Limited
Limited reserves
reserves the
the right
right to
to make
make changes
changes without
without further
further notice
notice to
to any
any products
products oror specifi-
specifi-
cations herein.
cations herein. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not assume
assume any
any responsibility
responsibility for
for use
use of
of any
any its
its products
products for
for any
any
particular purpose,
particular purpose, nor
nor does
does BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited assume
assume any
any liability
liability arising
arising out
out of
of the
the application
application or
or use
use
of any
of any its
its products
products or
or circuits.
circuits. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not convey
convey anyany license
license under
under its
its patent
patent rights
rights or
or
other rights
other rights nor
nor the
the rights
rights of
of others.
others.

MAIN SITE
MAIN SITE
- Headquarters
BCD Semiconductor Manufacturing Limited - Wafer
BCD FabSemiconductor Manufacturing Limited
BCD Semiconductor
- Wafer Fab Manufacturing Limited Shanghai SIM-BCD
- IC Design GroupSemiconductor Manufacturing Co., Ltd.
No. 1600, Zi
Shanghai Xing Road,
SIM-BCD Shanghai ZiZhu
Semiconductor Science-basedLimited
Manufacturing Industrial Park, 200241, China 800 Yi Shan Road,
Advanced Shanghai
Analog 200233,
Circuits China Corporation
(Shanghai)
Tel:
800,+86-21-24162266, Fax: +86-21-24162277
Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491,YiFax:
8F, Zone B, 900, Shan+86-21-5450 0008200233, China
Road, Shanghai
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
REGIONAL SALES OFFICE
Shenzhen OfficeSALES OFFICE
REGIONAL Taiwan Office USA Office
Shanghai
Shenzhen SIM-BCD
Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan
Semiconductor
Office (Taiwan) Company Limited BCD Office
USA Semiconductor Corp.
Unit A Room
Shanghai 1203, Skyworth
SIM-BCD Bldg., Gaoxin
Semiconductor Ave.1.S., Nanshan
Manufacturing Co., Ltd.District,
Shenzhen Shenzhen,
Office 4F, 298-1,
BCDRui Guang Road,(Taiwan)
Semiconductor Nei-Hu District,
Company Taipei,
Limited 30920Semiconductor
BCD Huntwood Ave.Corporation
Hayward,
China
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, CA 94544,
30920 USA Ave. Hayward,
Huntwood
Tel:
Room +86-755-8826
E, 5F, Noble 7951 Tel: +886-2-2656
Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan 2808 Tel :94544,
CA +1-510-324-2988
U.S.A
Fax: +86-755-88267951
Tel: +86-755-8826 7865 Fax: +886-2-2656 28062808
Tel: +886-2-2656 Fax:: +1-510-324-2988
Tel +1-510-324-2788
Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 Fax: +1-510-324-2788

You might also like