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A. Decays as 1 / R, where R is the separation distance between the emitter and the receptor
B. Decays as R, where R is the separation distance between the emitter and the receptor
C. Decays as 1 / 2 R, where R is the separation distance between the emitter and the receptor
D. Decays as 2R, where R is the separation distance between the emitter and the receptor
A. Only at turn – on
D. None of these
3.In BJT, the forward biased base emitter junction inject holes from base to emitter, the holes-------?
4.In EMC signal, the source delivers maximum power to the input of transmission line when the transmission line input
impedance
D. None of these
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5.As the breakdown voltage reached, the DIAC exhibits?
D. All of these
6,For swept frequency measurements, the input impedance of the mismatched transmission line would vary with
frequency as the electrical length of the transmission line would
D. Either A. or B.
A. TRIAC
B. SCR
C. GTO
8.Voltage commutation circuit can be converted into a current commutation by interchanging the positions of------------?
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9.In a 3 phase bridge rectifier the ripple frequency is -------------?
11.The sum of all phase current in a star connected primary winding with no neutral connection is equal to-----------?
A. Phase current
12.In current commutated DC-DC choppers, the voltage spike appears across the load when-------------?
C. Both A. and B.
D. None of these
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13.For power output higher than 15 kW, the suitable rectifier is----------------?
A. Single phase
B. 3 phase
C. Poly phase
14.In a full wave rectifier, the rectification ratio is approximately equal to------------?
A. 61%
B. 71%
C. 81%
D. 91%
16.In a single phase full wave rectifier, during blocking state the pea inverse voltage of diode is--------------?
A. V m
B. 2 V m
C. V m / 2
D. 4 V m
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A. rectifier
B. inverter
C. chopper
D. regulator
18.The output power of the cascaded amplifier / attenuator system can be determined using-----------?
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B. silicon has small leakage current than germanium
A. Across anode
C. Across cathode
A. Two
B. Three
C. Four
D. Five
B. Frequency only
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C. Duty ratio and frequency
A. Lossless
D. All of these
29.In ac – dc conversion, when the switch is closed then the sum of voltages around the loop is------------?
A. Zero
B. Non zero
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D. Twice of the voltage when switch is open
30.If a shunt motor is started with its field winding open then?
A. It will rotate at the same speed as that with its field winding closed
B. It will rotate at less speed as that with its field winding closed
D. None of these
C. Embedded converters
D. All of these
A. Canberra
B. Austria
C. Bulgaria
D. Angola
B. Mathematical method
C. Statistical method
D. Economic parameters
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34.4 thyristors rated 200 V in series. The operating voltage of the string is 0.600 V. Derating factor of the string is-----------
----------?
A. 0.75
B. 0.7
C. 0.2
D. 0.25
A. AC – AC converters
B. AC – DC converters
C. DC – AC converters
D. DC – DC converters
37.A string of n parallel SCRs is operated at 72 KA, the rating of each SCR is 1 KA. If derating factor of the string is 0.1.
value of n will be-----------?
A. 60
B. 70
C. 80
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D. 90
38.60 thyrsistors are connected in series and parallel to form a 10 KV and 5.5 KA switch. Each thyristor is rated for 1.2
KV, 1 KA. The no. of parallel path are 6. The efficiency of the switch is----------------------?
A. 76.3 %
B. 91.6 %
C. 83.3 %
D. 90.9 %
D. Both A and C
40.A thyristor string is made of a no. of SCR connected in series and parallel. The string have volume and current of 11
KV and 4 KA. The voltage and current rating of available SCRs are 1800 V and 1000 A. For a string efficiency of 90 % let
the number of SCRs in series and parallel are a and b respectively. Then the value of a and b will be-------------?
A. 5, 7
B. 4, 6
C. 7, 5
D. 6, 4
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C. Series R and diode with C across R
42.By which one of the following we can measure the reliability of a string-------------?
A. String efficient
B. Reliability factor
C. Factor of safety
D. Derating factor
A. holes only
B. electrons only
A. series connection.
B. parallel connection.
D. both B and C.
A. To limit di / dt of SCR
B. To limit dV / dt of SCR
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D. Both B and C
A. BJT
B. Power dioed
C. MOSFET
D. None of above
48.ON state voltage drop across SCR lie between the range-------------?
A. 0 – 0.5 V.
B. 0.5 – 1 V.
C. 1 – 1.5 V.
D. 1.5 – 2 V.
A. IGBTs
B. COOLMOS
C. TRIAC
D. SITS
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50.Which statement is true ?
D. All of these
A. SIT
B. BJT
C. TRIAC
D. IGBT
A. 3 – 10 µs
B. 3 – 50 µs
C. 3 – 100 µs
D. 3 – 500 µs
A. B.JTs
B. MOSFETs
C. IGBTs
D. All of above
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54.During gate recovery time-------------?
D. both B and C
57.During which time maximum conduction spreading take place in the thyristor during turn ON?
A. Delay time
B. Spread time
C. Rise time
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A. Positive gate signal
D. None of these
D. None of these
A. 10 – 20 µs
B. 40 – 60 µs
C. 1 – 4 µs
D. 90 – 100 µs
61.The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The
storage charge current QRR is-----------?
A. 130 μs
B. 135 μs
C. 140 μs
D. 145 μs
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62.Maximum power loss occurs during-----------------?
A. delay time
B. rise time
C. spread time
D. all
64.The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of
1/10, then SCR will-----------?
A. Turn on
B. Not turn on
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66.Rise time is defined by the interval when------------?
D. both B and C
67.A modern power semiconductor device that combines the characteristic of BJT and MOSFET is-------------?
A. IGBT
B. FCT
C. MCT
D. GTO
D. all of these
69.Which one is most suitable power device for high frequency (>100 KHz) switching application?
A. BJT
B. Power MOSFET
C. Schottky diode
D. Microwave transistor
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A. in series
B. in parallel
D. anti parallel
D. All of these
A. Unwanted turn ON
B. Breakdown of J2 junction
C. Both A and B
D. Anyone of these
A. Kq/T
B. KT/q
C. qT/K
D. (K2/q)(T + 1/T – 1)
A. Breakdown of junction
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B. Local hot spot
C. Insulation failure
D. None of these
D. None of these
A. Snubber circuit
B. Fuse
C. Equalizing circuit
D. Circuit breaker
A. 1 KVA
B. 2 KVA
C. 500 VA
D. 100 KVA
A. Fuse.
B. Snubber circuit
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C. Inductor
79.Compared to transistor, --------- have lower on state conduction losses and higher power handling capability?
A. TRIACs
C. MOSFETs
D. Thyristor
D. All of these
A. AC switch
B. DC switch
C. Both a and B
A. Iron
B. Aluminium
C. Carbon
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D Silver
A. Controlled transistor
B. Controlled switch
C. magnetic circuit.
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87.SCR will be turned off when anode current is---------------?
A. < latching current but greater than holding current and gate signal is 0.
C. < latching current but greater than holding current and gate signal is present.
88.he capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the
off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of
dv/dt?
A. 600 V/µs
B. 800 V/µs
C. 1200 V/µs
D. 1000 V/µs
90.Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then-----------
-----?
A. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3.
B. Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3.
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D. Vc1 > Vc2 > Vc3 when Ig1 ≥ Ig2 &Atil
A. SIT
B. SITH
C. GTO
D. SCR
B. Gate triggering
C. dV / dt triggering
D. Thermal triggering
A. Recovery is only 5 µs
B. Recovery is only 50 µs
D. None of these
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95.When a large surge current of very short duration flows through a thyristor then which one of the following device
will operate to protect the thyristor -----------?
A. CB
B. Snubber circuit
A. High di/dt
B. High dv/dt
C. Low di/dt
D. Low dv/dt
97.CB used for over current protection of thyristor operates when the fault current is----------?
A. of long period
B. of short duration
98.he anode current is 800 A, then the amount of current required to turn off the GTO is about------------?
A. 20 A
B. 200 A
C. 600 A
D. 400 A
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99.What is used to protect the SCR from over current ----------------?
A. CB and fuse.
B. Heat sink.
C. Snubber circuit.
100.Under normal operating condition voltage clamping device offers impedance of---------?
A. high value.
B. low value.
C. zero value.
D. moderate value.
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