Electronics and Communications in Japan, Part 2, Vol. 76, No.

9, 1993
Translated from Denshi Joho Tsushin Gakkai Ronbunshi, Vol. 76-C-I, No. 5, May 1993. pp. 181-188

Switched Branch Line PIN Diode Phase Shifter

Makoto Matsunaga, Takashi Katagi, and Tsutomu Hashimoto, Members

Electro-Optics & Microwave Systems Laboratory, Mitsubishi Electric Corporation,
Kamakura, Japan 247

Shintaro Nakahara, Member

Computer & Information Systems Laboratory, Mitsubishi Electric Corporation,
Karnakura, Japan 247

SUMMARY hybrid couplers used in a reflection type and which occu-

As a small phase shifter with a phase shift of 180
degrees from two PIN diodes, a switched branch-line
phase shifter is proposed and its characteristics, design
method, and experimental results are presented. In the
present phase shifter, the ratio of the characteristic im-
pedances of the main line and the branch line is made to
be 1 : 2. It is found that by this ratio the matching is
always possible regardless of the impedance value of the
diodes. The relationship is shown between the diode
parameters and the circuit to obtain a phase shift of 180
degrees. In addition, the magnitude of the diode loss
inherent to the present phase shifter is expressed in terms
of the switching cutoff frequency which is a figure of
merit of the diode. Also, the relationship is obtained
between the input power and the voltage applied to the
diode so that the maximum power capability determined
from the breakdown voltage of the diode is obtained.
Further, a phase shifter is fabricated at L band so that the
effectiveness of the design method is confirmed.
The performance of the phase shifter fabricated for
experiment has a phase-shift error of 7"M,,, an insertion
loss Of 0.5 dBMAx, VSwR Of 1.4MA,, and maximum
peak power of about 3 W in the PIN diode with a break-
down voltage of 60 V. These results agree well with the
design values. The present phase shifter does not require
py a large area. In addition, this phase shifter is useful
for size reduction and cost reduction since only two di-
odes are needed.
Key words: Phase shifter; PIN diode; microwave:
switching cutoff frequency; phase shift.
1. Introduction
Development is in progress for thin phased-may
antennas which are lightweight and conformable to vehic-
ular bodies and which are used for satellite tracking in
mobile satellite communication [ 1-31. Since these anten-
nas are used both to transmit and receive, low-loss and
high-power PIN diode phase shifters are used for their
phase control element. In the antenna feed circuits, many
PIN diode phase shifters are used which are placed at
designated locations determined by the array spacing of
the element antennas. In this manner, a thin-feed network
with a planar construction is fabricated. Hence, it is im-
portant to make the phase shifters small in size to make
planar construction possible.
Of the PIN-diode phase shifters, the maximum
phase-shift bit, or 180-deg bit, is realized with a

11 ISSN8756-663X/93/0W9-C@11
0 1994 Scripta Technica, Inc.
 Yain Line PIN Diode To resolve this difficulty, a switched branch-line
PIN diode phase shifter is proposed and developed. In
this phase shlfter, a phase shift of 180 degrees can be
obtained with a planar construction without a hybrid
coupler. The required number of diodes is two. Hence,
i ne the phase shifter can be made small in size and of low
cost.

In this paper, the configuration and operation of the

switched branch-line phase shifter are described in sec-
tion 2. In section 3, the reflectionless condition needed
for the phase shifter is obtained. In addition, the relation-
ship between the circuit parameters and the diode param-
eters for a phase shift of 180 degrees is shown. Next,
L RI under the reflection-free condition, the relationship be-
Forward Bias tween the diode loss inherent to the present phase shifter
and the diode figure of merit (switching cutoff frequency)
is derived. It is shown that the diode loss can be reduced
in the same manner as in the reflection type. Also, the
m k Reverse Bias relationship between the input power to the phase shifter
of this type and the RF voltage applied to the diode is
PIN Diode Equivalent Circuits derived. Then the breakdown voltage needed for the
diode to be used is given. Further, in section 4, the
( a ) Basic construction design and the experimental results in the L band are
described. The measured results and the design values
are compared so that the effectiveness of the present
Path 1 4 0 --TT

e +lJ c3 4
phase shifter and its design method is shown.

2. Configuration and Operation of the

Path 2
Forward B i a s Reverse B i a s
( b ) Schematics for forward arid reverse bias
Fig. 1. Switched branch-line phase shifter.
reflection type [46] or a switched-line type [7, 81 in
which a large phase shift can easily be obtained. Since
the refleciton type requires a hybrid coupler, its size
tends to be large if a branch-line type is used for planar
construction. The switched-line type requires four diodes
per bit, which is twice the number needed in the reflec-
tion type.
Switched Branch-Line Phase Shifter
Figure l(a) shows the basic configuration of the
switched branch-line phase shifter. This phase shifter is
made of a main transmission line, two PIN diodes, and
a branch line approximately one-half wavelength long. Of
the two diodes, one is connected in series to the main
line while the other is connected in parallel at the mid-
point of the branch line. The equivalent circuits of the
PIN diode for the forward and reverse bias are shown in
the figure. In the forward bias, the diode becomes a low
impedance whereas it exhibits a high impedance at a
reverse bias since the reactance of the junction capaci-
tance is high. Here, Rfand R, are the series resistance
under the forward and reverse bias; L is the inductance
of the lead wire and is not intrinsic to the diode. Table
1 lists typical parameters of a beam lead PIN diode.
Figure l(b) shows the model of the operation. In
this phase shifter, the wave propagation path is switched
from path 1 to path 2 going through the branch line when
the two diodes are switched from the forward bias (flow

12
 Table I . Parameters for beam-lead PIN diode

I
f *
Equivalent circuit

Forward bias
Zdr=Rr t j X ,
=Rr i jwL
(, L R, CI
mF
Reverse bias
Zd,=R, t jX,
=R, t j (uL-l/(oCI 1)

impedance) to the reverse bias (high impedance). Hence, I Magnet i c Wa I I (Even Mode)
if the diodes exhibit an ideal switching operation, a phase I E l e c t r i c W a l l ( 0 d d Mode)
shift of 180 degrees corresponding to the difference in
the path length is obtained. However, in the reverse bias,
in general, the diode is not completely open even though
it has a low impedance. Hence, no ideal switching opera-
tion takes place in itself. Therefore, if the branch is
simply switched by such diodes, the reflection increases
and the required amount of phase shift with a low loss
cannot be obtained. The basic circuit operation of the
e /2
phase shifter is that the reflection is zero at the designed
center frequency. Hence, the switched branch-line, 180-
degree phase shifter proposed here must be able to match
an arbitrary diode impedance and still obtain a phase
variation of 180 degrees.
2z

3. Characteristics of Switched Branch-

L i e Phase Shifter
3.1. Reflection-free condition Fig. 2. Even and odd mode equivalent circuit of
switched branch-line phase shifter.
Let the characteristic impedance (source imped-
ance) of the main line of the switched branch-line phase
shifter be &, the length of the branch line be I (electrical
length of e), its characteristic impedance be Z,, and the
impedances of the series and parallel diodes be 2, and
Zdp. Since the phase-shifter circuit is symmetric with
respect to the input and output terminal, the input and
output terminals are excited by the even and odd modes
for the circuit analysis. Figure 2 shows the equivalent
circuits of the switched branch-line phase shifter excited
in the even and odd modes. The reflection coefficients In Eqs. (1) and (2), the second terms in each denomina-
for the even and odd modes at the center frequency at the tor and numerator are those related to the length 8 of the
input and output terminals are branch line. If 8 = x is chosen at the designed center

13

( a ) Forward bias for various values of L
(Lz0.1, 0.5, l.On€i, Z0=50n)
0.5 1 1.5 2 2.5 3 3.5
K (=Zt /Zo 1 condition of K = 2.
( b ) Keverse bias for various values of Cj
(C,=O.O5, 0.1, 0.2, 0.4pF, Zo=50n)
Fig. 3 . Return loss and diode loss vs. K (=
Z,/Z,) of switched branch-line phase shifter
(Freq.: L-band, diode parameter: Table 1).
frequency, these terms can be eliminated. Then the volt-
age-reflection coefficient s,, and the voltage-transfer
coefficient S,, at the designed center frequency seen from
the input and output terminals are
(3)
14
where K = Z,/&. The condition that the reflection be-
comes zero is given from Eq. (3) as
If the diodes on the series connection side and the paral-
lel connection sides are different, it is possible to make
the ratio zd#& of these impedances Z, and z d p equal
for both the forward and reverse biases. Therefore,
diodes with identical characteristics are used on both the
series and parallel connection sides and the impedances
of the diodes are made equal. Then from Eq. (5), K = 2
becomes the reflectionless condition. This implies that a
matching is always possible by an appropriate choice of
the characteristic impedances & and Z , of the transmis-
sion line at the center frequency where 8 = x . There-
fore, the matching is always possible at the center fre-
quency even if the biases of the two diodes are switched
simultaneously from forward to reverse.
The magnitude of the reflection in the case where
K is deviated from 2 is shown in Figs. 3(a) and (b). For
5
the forward bias, L is a parameter while is used as a
parameter for the reverse bias. The return loss and the
insertion loss vs. K are plotted. The characteristic imped-
ance Z, of the main line is 50 Q and the frequency is in
the L band. The diode parameters are those listed in
Table 1. It is found that the return loss increases sharply
when the transmission line impedance deviates from the
Next, the effect of the length of the branch line
length on the reflection of the phase shifter is discussed.
Let the electrical length 8 of the branch line be 8 = x
+ A 8 where A8 is the increment of the electrical length
of the branch line from IF. Then the relationship of
cot(8/2) -(AO/2) is substituted into Eqs. (1) and (2).
J
By letting K = 2 and Zdp = 2, = z d , the reflection
coefficients re and,'I of the even and odd modes are
obtained. From these, the voltage reflection coefficient
S,,is
Let us now study the fundamental relationship
between the reflection and AO. The values of z d under
the forward and reverse biases are &,and Zd,. Let Z4 =
Rj + jXjand Zd, = R, + jX,. If it is assumed that Rr Xj
a 2,and R,., X, a X,.,then the reflection at each bias is
obtained from Eq. (6) as
 Forward bias: SW Z -jA814

Reverse bias: S11~sj3d8/4

1 0 5 1
Hence, it is found that the magnitude of reflection in- 1OOL
h

creases in proportion to A 0 and that the reflection under 5

a reverse bias is three times larger than the one under a L

forward bias, if the length of the branch line is deviated N

50 - -
by A 0 from x.

3.2. Phase shift 1 1 1 1 . . . I

As shown in Fig. l(b), the circuit configuration of

the switched branch-line phase shifter changes before and
after the path is switched. Therefore, the phase shift Fig. 4. Frequency dependence of 2,for 180deg phase
cannot be determined solely by the difference in the shift (diode parameter: Table 1).
physical length of the path. In the forward bias, the
phase of the propagating electromagnetic field is delayed
by the inductance L connected in series to the main line.
On the other hand, in the reverse bias, the phase is
advanced due to the diode capacitance connected in series
to the main line and the phase is delayed by the diode
capacitance connected in parallel to the branch line. Hence, the value of 2, needed to obtain a phase shift of
Here, the relationship between the diode parameters and 180 degrees is determined by the diode parameters and
2, to obtain a phase shift of 180 degrees is shown. When frequency. The frequency dependence of 2,is shown in
K = 2, S,, is given by the following from Eq. (4): Fig. 4 when the diode parameters in Table 1 are used.
When o a 1/(Lq)lR at a frequency lower than the X
band, (L/q)', can be used as an approximation for 2,.

where is the diode impedance and = zdp = 2

,.
Equation (7) is identical to the equation obtained by
changing the sign of the reflection coefficient when the
diode is connected to the end of the transmission line
with a characteristic ixnpedance of 2,.Hence, the trans-
mission phase and amplitude (loss) of the proposed
switched branch-line phase shifter have characteristics
similar to those of the reflection phase shifter.
Next, the effect of the branch-line length on the
phase shift is discussed. Let the electrical length 0 of the
branch line be 0 = x + A 0 and use the same approxi-
mation as the one used in section 3.1. Then the voltage
transmission coefficient S,, is given by

The phases LS2g and LS21r for the forward and To study the fundamental relationship between the phase
reverse biases are given from Eq. (7) and the diode and A0, the relationship between the diode impedances
equivalent circuit in Fig. 1 by in the forward and reverse biases and the transmission
line impedance is used. From Eq. (1l), the transmission
- 2 XJZl phase at each bias is
L &,=tan-' { l-(Xf'+ Rf2)/Z1z
Forward bias: L tan-'( - 4814)

Reverse bias: L SzlT= - 7r -tan-'( - 54814)

where Xj = oL,X,,= oL - l/(oCj) and o is the operat- Hence, if the amount of phase shift is A4 (=LSZv -
ing angular frequency. From Eqs. (8) and (9), the condi- LSzIr), then
tion for obtaining a phase shift of 180 degrees is given
by the following if LSag - L S z =~ x:

15
 1 - 21- 01 210

"
h

W
-180
-
0
v
(Phase Shift ) I;
W

-1501 1150

-0.1 -0.05 0 0.05 0.1 0.1 0.2 0.3 0.4 0.5

A0/lT -2 OlOglS2,1 1 (d B)

Fig. 5 . Relations between transmitting phase Fig. 6. Diode loss relations between forward and
and branch-line length (branch-lineelectrical reverse bias for various values of oJo.
length: 0 = x + A0).

invariant even when the configurationis varied. For K =

2, the amplitudes of &,/and S,,,. under the forward and
Figure 5 shows the relationship of LS21r, LS,,,, and reverse biases are given by the following equations from
the phase shift versus the branch-line length. If the elec- the diode equivalent circuits in Fig. 1 and Eq. (7):
trical length of the branch line differs by A 0 from x,
then LSzlr is delayed from -x by 9 4 * Ae. However,
since L&J also is delayed by 114* A 0 , the deviation of
the total phase shift is only AO. The reason why LS,,jis
a delayed phase with respect to A 0 is that the impedance
given by the branch line becomes capacitive or inductive
whether A 0 is positive or negative. This result is related
via the following equation to the frequency dependence
of the phase shift if the frequency (0) is shifted from the Under the conditions of RJZ, a 1, (XJZl)* a 1, (R,./X,.)*
center frequency (me)and the electrical length of the a 1, 2R,Zl/X,Z a 1, and xfa (oq)-'
and Eq. (lo), the
branch line actually is changed: relationship between the amplitudes of S2vand S2,, is
given approximately by
+
Ad= a(1 AB/a)
=X'W/WO

3.3. Loss performance limitation
Let us derive the relationship between the diode
parameters and the diode loss determined by the circuit
configuration. The switchingcutoff angular frequency o,
of the diode is given by [lo, 1 1J
This indicates the relationship of the diode losses in the
two phase conditions of the phase shifter. The relation-
ship for various values of o c / w is shown in Fig. 6. Once
the operating angular frequency o is given, there exists
a relationship between the diode losses in the two phase
conditions and the losses cannot take arbitrary values
independently.

From Eqs. (13) and (14), the characteristic imped-

Here, a, depends only on the physical nature of the ance of the branch line which makes equal the diode
semiconductor and is a figure of merit of the diode. It is losses in the two phase conditions of the phase shifter is

16
 I- 2 I 50R I
This is the equal loss condition for the two phase condi-
tions. In general, R, > Rf in the switching diode [l 11. If
the equal loss condition is satisfied in the forward and
reverse biases, the loss expressed in decibels obtained
from Eq. (15) is

LOSS(dB)=lO log(1 - Z ( W / W ~ ) } ~
Z17.37(w/wC)

This is equal to the diode loss of 180-deg bit of the re-

flection phase shifter shown in [5].
0.1 0.5 1 2 3 4 5 10
Pin(W)
3.4. Relationship between the input power and
the diode applied voltage Fig. 7. Applied RF voltage to reverse-biased diode
vs. incident power for various values of Z,.
There exists a specific relationship in the circuit
configuration between the input power to the phase shift-
er and the RF voltage applied to the diode. When the
voltage applied to the PIN diode under the reverse bias Table 1. It is found that Vw increases for the identical
exceeds the breakdown voltage, the diode is damaged input power if Z, is increased.
instantaneously. Therefore, the R F voltage including the
bias voltage applied to the diode must be made less than
the breakdown voltage of the diode. Here, the relationship It is not assumed that the resistive part of the diode
of the applied RF voltage to the input power to the pres- is smaller than the reactive component, (R,,/Xr)a 1 and
ent phase shifter is derived so that the measure of the Z, also is smaller than the reactance (Z,/X,) a 1. Then,
input power that can be handled by the present phase from Eq. (19), the maximum handling power P,, of the
shifter is obtained. present phase shifter under the reverse bias is given by
the following equation in terms of the breakdown voltage
Let the input power to the phase shifter be P , the VBRof the PIN diode and the bias voltage Vb:
RF voltage applied to the series-connected diode be vs,
and the RF voltage of the parallel connected diode be vp.
Then, in the case of K = 2,

4. Experimental Results

Based on the phase-shifter circuit and the results of

Here, vs and V d have different phases but identical mag-
nitudes. Hence, both the series- and parallel-connected
diodes are subject to the same input power limitation.
The RF voltage of the diode in the reverse bias is ob-
tained from Eq. (1 7) or Eq. (18) as
An example of the relationship between this input power
and the RF voltage Vpd ( = I v s I , Iv,l) applied to the
reverse-biased diode is shown in Fig. 7 with Z , as a
parameter. The diode parameters used are those in
the study described in sections 2 and 3, a phase shifter
was designed and tested at the L band. The dielectric
substrate for the circuits is BT resin substrate,* and the
transmission line is microstrip line. The PIN diodes used
are of beam-lead type with the parameters listed in Table
1. Here, Z , = 97.2 R from the condition (10) for a phase
shift of 180 degrees. Except for the input and output
matching circuits to Zo = 50 Q, Z , is chosen to be 100 i2
for reducing the size. In this case, the phase-shift error at
*Commercial name of the product from Mitsubishi
Gas Chemical Co., Ltd.

17
 Freq. ( f / f o

2 0.85 1 1.15
EO
0:1
dc 2
.o,
c
3
L

(a) Insertion loss

Freq. ( f / f a )
0.85 1 1.1 5
Fig. 8. L-band switched branch-line phase 0
shifter. n
m
v 10
ln
ln
0

20
z3
-I

the center frequency is only 0.3 deg from Eqs. (8) and +d

(9). On the other hand, the impedance value satisfying the

equal loss condition in Eq. (16) is Z, = 535 R. The dif- ! \ I /

ference in loss due to a value of 100 R for Z, is only 0.2 !y!

40
dB.
( b ) Return loss
A photograph of the switched branch-line 180-de-
gree phase shifter fabricated for experiment is shown in 270
a*
Fig. 8. The dc bias is applied in series to the two diodes. w
n
W
Figure 9 shows the measured results. At the designed Z
.- 180
center frequency (1.6 GHz), the phase shift was 183 deg, r
v)
the insertion loss was 0.48 dB in the forward bias and
0.38 dB in the reverse bias. The return loss was -31 dEi
=:
m
90
c
in the forward bias and -25 dB in the reverse bias. The 0

reason why the reflection is not the minimum at the 0

0.8 5 1 1.1 5
center frequency is considered to be the error in the
length of the branch line (as evidenced by the fact that Freq. ( f / f o )
the return loss is -38 dB and -28 dB in the forward and ( c ) Phase shift
reverse biases at A0 = 3 deg) and the effect of reflection Fig. 9. L-band switched branch-line 180deg
at the input connector. The measured VSWR is less than phase shifter characteristics (forward bias =
1.5 in the frequency range of f 6 percent centered at the 20 mA; reverse bias = 24 V).
designed frequency.

When the transmission line loss without diodes

connected is subtracted from the measured loss of the
phase shifter, the diode loss becomes 0.22 dl3 in the
forward bias and 0.02 dB in the reverse bias. If this is
compared with Eq. (15). the result is 0.01 dB for 0.22 dB
at wJm = 320 and agrees well with the measured results.
Next, the test results of the handling peak power of
the phase shifter are presented. A reverse bias of 24 V
was applied to the diode. The breakdown voltage (VBR)
of the diode used is nominally 60 V. Hence, from Eq.
(20), the computed value of the handling peak power of
the present phase shifter is 3.2 W. Figure 10 shows the
measured results of the input power vs. insertion loss of
the 180deg phase shifter. The frequency was 1.6 GHz
CW. When the incident power exceeds 2 W, the loss
begins to increase while the loss increases suddenly as
the incident power exceeds 3 W; and the diode was dam-
aged at 3.5 W. The difference from the designed value
is considered to be due to the fact that the transmission
line loss is not taken into account. The value of the input
value where the loss increases suddenly agrees well with
the calculated value.

18
 I nc i dent Pore r (W)
2
0.1
01 .0."5. . . , 1 , 3, 4, 5
. . . . . . ... .... .
I I
Point
Reverse B i a s 24Vldiode
3 .
Fig. 10. Measured insertion loss vs. incident power.
This phase shifter was used for the 18Odeg bit of
the 3-bit phase shifter in the L-band thin vehicular phased
array [3]. Figure 11 is a photograph of the feed network
in which 18 of these phase shifters are included. In
addition to the phase shifters, this feed network contains
19 power dividers, phase-shifter bias circuits and cou-
plers to microstrip antennas on a single substrate. By
making the phase shifters smaller, the feed network was
made to have a planar construction.
5. Conclusions
The characteristics, design method, and experimen-
tal results are reported on the switching branch-line 180-
deg phase shifter made of two PIN diodes. It is found
that in this phase shifter the choice of the characteristic
impedance ratio of the main line and the branch line as
2 is the condition enabling matching to a diode with any
impedance. Under this condition, the relationship be-
tween the characteristic impedance of the branch line and
the diode parameter is found to obtain a phase shift of
180 degrees.
Next, the relationship between the diode loss and
the diode switching cutoff frequency inherent in the
present phase shifter is found. It is shown that the rela-
tionship can be determined under the forward and reverse
biases once the diode characteristic (switching cutoff
frequency) is found. Further, the relationship is found
between the input power to the phase shifter and the
voltage applied to the diode. It is shown that the voltages
applied to the seriesconnected diode and the parallel-
connected diode become equal. The handling power of
the phase shifter determined from the diode breakdown
voltage and the circuit parameters is obtained.
Finally, based on the results of the characteristic
analysis of the present phase shifter, the latter is designed
19
Fig. 11. Planar feed circuit using switched branch-
line phase shifter for 180deg bit.
and fabricated at the L band. The reflection is low with
a VSWR of 1.1 at the center frequency for both the
forward and the reverse biases. The phase shift amount
is 183 deg and agrees well with the designed value. The
measured values of the diode loss in the forward and
reverse biases agree well with the relationship given by
the equation once the transmission line loss is subtracted.
In the experiment of the incident power vs. insertion loss
using PIN diodes with a breakdown voltage of 60 V, the
power at which the loss increases suddenly agrees well
with the nominal power calculation. From these results,
the operation of the present phase shifter and the effec-
tiveness of the design method have been confirmed. In
the present phase shifter, it is not necessary to use a
large and lossy hybrid coupler. A 18Odeg phase shifter
can be realized with a low diode loss.
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1. G. Schaffher. Low-cost cartop phased-array steer-
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sium Digest, pp. 949-952 (June 1987).
2. S. Ohmori, K. Mano, K. Tanaka, M. Matsunaga,
and M. Tsuchiya. Phased-array antenna for vehi-
cles. Proc. 1990 International Mobile Satellite
Conference, pp. 519-522 (June 1990).
3. F. W. Schmit. Low-cost microstrip phased-array
antenna for use in mobile satellite telephone com-
munication service. 1987 IEEE AP-S Int. Antennas
Propagation Symposium Digest, pp. 1152-1155
(June 1987).
4. R. W. Burns and L. Stark. PIN diodes advance
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38-48 (Nov. 1965).
5. L. Stark. Microwave theory of phased-array
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1661-1701 (Dec. 1974).
6. J. F. White. Diode phase shifters for array anten-
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7. P. P. Coats. An octave-band switched-line micro-
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wave Theory Tech., MTT-21, 7, pp. 444-449
(July 1973).
8. R. V. Garver. Broadband diode phase shifters.
IEEE Trans. Microwave Theory & Tech., MTT-
20, 5, pp. 314-323 (May 1972).
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AUTHORS (from left to right)

Makoto Matsunaga graduated in 1972 from the Department of CommunicationEngineering, Osaka University, where
he obtained an M.S. in 1974. In that year, he joined Mitsubishi Electric. Since then, he has been engaged in research on
microwave circuits and antennas. Presently, he is Group Manager of the Array Antenna Group of Electrooptics &
Microwave Systems Laboratory.

Shintaro Nakahara graduated in 1985 from the Department of Electrical and Electronic Engineering, Sophia
University, and joined Mitsubishi Electric. Since then, he has been engaged in research on antennas for satellite communi-
cation. Presently, he is with Planning Department of Computer & Information Systems Laboratory.

Takashi Katagi graduated in 1963 from the Department of Electronic Engineering, Kyoto University. Later he
obtained a Dr. of Eng. degree. He has been engaged in research on antennas for public communication, satellite
communication, and radars. Presently, he is Associate Director of Electrooptics & Microwave Systems Laboratory. He
received an Inada Award in 1966, an Imperial Award for Invention in 1977, and an Achievement Award from I.E.I.C.E.
in 1986. He is a member of IEEE.

Tsutomu H a s h h o t 0 graduated in 1959 from the Department of Electrical Engineering, Kyoto University, and
joined Mitsubishi Electric. Later he obtained a Dr. of Eng. degree. In 1990, he became Director of Electrooptics &
Microwave Systems Laboratory. He has been engaged in research on traveling wave tubes, microwave circuits, and optical
fiber network. He is an IEEE Fellow.

20