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D
D
D
D
G
G
S S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C -6.5
ID
Current TA=70°C -5.3 A
C
Pulsed Drain Current IDM -30
Avalanche Current C IAS, IAR 17 A
Avalanche energy L=0.1mH C EAS, EAR 14 mJ
TA=25°C 3.1
PD W
Power Dissipation B TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 59 75 °C/W
Maximum Junction-to-Lead Steady-State RθJL 16 24 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
40 30
-10V -8V -6V VDS=-5V
35
25
30 -5V
20
25
-ID(A)
-ID (A)
20 VGS=-4.5V 15
15
-4V 10
10 25°C
125°C
5
5 VGS=-3.5V
0 0
0 1 2 3 4 5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)
80 1.8
50 1.4
17
40
5
VGS=-4.5V
1.2
ID=-5A2
30 10
VGS=-10V 1
20
10 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction
18Temperature
Voltage (Note E) (Note E)
120 1.0E+02
ID=-6.5A
1.0E+01
100
40
1.0E+00
Ω)
80
RDS(ON) (mΩ
1.0E-01
-IS (A)
125°C 25°C
125°C 1.0E-02
60
1.0E-03
40
1.0E-04
25°C
20 1.0E-05
10 800
VDS=-15V
ID=-6.5A 700
8
600 Ciss
Capacitance (pF)
500
-VGS (Volts)
6
400
4 300
Coss
200
2
100
Crss
0 0
0 2 4 6 8 10 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0
100.0
TA=25°C
-IAR (A) Peak Avalanche Current
TA=100°C
10µs
TA=150° 10.0 RDS(ON) 100µs
limited
TA=125°C
-ID (Amps)
1ms
10.0 1.0
10ms
10000
TA=25°C
1000
Power (W)
100
10
1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
10
D=Ton/T In descending order
Zθ JA Normalized Transient
1 RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Ig
Charge
td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+
Vgs 10%
Vds
Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds