AOL1712

N-Channel Enhancement Mode Field Effect Transistor

SRFET TM

General Description Features

SRFET TM AOL1712 uses advanced trench VDS (V) = 30V

technology with a monolithically integrated Schottky ID =65A (VGS = 10V)
diode to provide excellent RDS(ON),and low gate RDS(ON) < 4.2mΩ (VGS = 10V)
charge. This device is suitable for use as a low side RDS(ON) < 5.5mΩ (VGS = 4.5V)
FET in SMPS, load switching and general purpose
applications.
UIS Tested
-RoHS Compliant Rg,Ciss,Coss,Crss Tested
-Halogen and Antimony Free Green Device*

TM
Ultra SO-8 Top View D

D TM
SRFET
Bottom tab
G Soft Recovery MOSFET:
connected to
Integrated Schottky Diode
S drain
G S

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V

Continuous Drain TC=25°C 65

Current
B, H
TC=100°C ID 65 A
C
Pulsed Drain Current IDM 80
Continuous Drain TA=25°C 16
A A
Current TA=70°C IDSM 12
Avalanche Current C IAR 38 A
C
Repetitive avalanche energy L=0.3mH EAR 217 mJ
TC=25°C 100
B
PD W
Power Dissipation TC=100°C 50
TA=25°C 2.1
A
PDSM W
Power Dissipation TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 19.6 25 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 50 60 °C/W
D
Maximum Junction-to-Case Steady-State RθJC 1 1.5 °C/W

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AOL1712

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 0.1
IDSS Zero Gate Voltage Drain Current mA
TJ=125°C 20
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 1.8 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 80 A
VGS=10V, ID=20A 3.5 4.2
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 5.5 6.6 mΩ
VGS=4.5V, ID=20A 4.4 5.5
gFS Forward Transconductance VDS=5V, ID=20A 90 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.36 0.5 V
IS Maximum Body-Diode + Schottky Diode Continuous Current H 65 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 3940 5120 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 590 pF
Crss Reverse Transfer Capacitance 255 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.72 1.1 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 73 95 nC
Qg(4.5V) Total Gate Charge 35 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 10.4 nC
Qgd Gate Drain Charge 12.4 nC
tD(on) Turn-On DelayTime 9.8 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 8.4 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 45 ns
tf Turn-Off Fall Time 10 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs 36 43 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 32 nC
A: The value of R θJA is measured with the device in a still air environment with T A=25°C. The power dissipation P DSM and current rating IDSM are
based on T J(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev3: July. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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AOL1712

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 100

10V VDS=5V
80
60
4.5V

3.5V 60
ID (A)

ID(A)
40
VGS=3.0V
40

125°C
20
20
25°C

0 0
0 0.5 1 1.5 2 2.5 3 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

5 1.9
ID=20A
Normalized On-Resistance

1.7 VGS=10V
4.5 VGS=4.5V
1.5
RDS(ON) (mΩ )

4 1.3 VGS=4.5V

VGS=10V 1.1
3.5
0.9

3 0.7
0 5 10 15 20 25 30 -40 -15 10 35 60 85 110 135 160 185
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

12 100
ID=20A

10 10

125°C
RDS(ON) (mΩ )

8 1
IS (A)

125°C

6 0.1
25°C

4 0.01
25°C

2 0.001
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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AOL1712

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 6000
VDS=15V
ID=20A 5000
8
Ciss

Capacitance (nF)
4000
VGS (Volts)

6
3000
4
2000
Coss
2 Crss
1000

0 0
0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 10000
100µs TJ(Max)=175°C
TC=25°C
1ms
1000
ID (Amps)

Power (W)

10.0 RDS(ON) 10ms

limited
100ms 100
DC
TJ(Max)=175°C
TC=25°C
1.0 10
0.1 1 10 100 0.0001 0.001 0.01 0.1 1
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJc.RθJc
Thermal Resistance

RθJC=1.5°C/W
1

0.1 PD
Single Pulse
Ton
T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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AOL1712

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 120
ID(A), Peak Avalanche Current

100

Power Dissipation (W)

80
TC=25°C 80

60 60

40
40
20

20 0
1.0E-06 1.0E-05 1.0E-04 1.0E-03 0 25 50 75 100 125 150 175
Time in avalanche, t A (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note B)

80 100
TJ(Max)=150°C
TA=25°C
80
60
Current rating ID(A)

Power (W)

60
40
40

20
20

0 0
0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000
TCASE (°C) Pulse Width (s)
Figure 14: Current De-rating (Note B) Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note G)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

TJ,PK=TC+PDM.ZθJc.RθJc
Thermal Resistance

1 RθJA=60°C/W

0.1

PD
0.01 D=Ton/T
Single Pulse TJ,PK=TA+PDM.ZθJA.RθJA Ton
RθJA=60°C/W T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)

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AOL1712

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Qgs Qgd
- VDC Vds
DUT -
Vgs
Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs +
Vgs VDC Vdd I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ IRM
Vgs Vdd
VDC
Vdd
Ig
- Vds

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