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June 2003
FDP7030L / FDB7030L
N-Channel Logic Level PowerTrench MOSFET
D D
G G
G S TO-263AB
D TO-220
S FDP Series FDB Series
S
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case 2.2 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.9 3 V
∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C mV/°C
–5
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source On– VGS = 10 V, ID = 40 A 5.2 7 mΩ
Resistance VGS = 4.5 V, ID = 37 A 6.5 10
VGS= 10 V, ID = 40 A, TJ=125°C 7.2 11
ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V 60 A
gFS Forward Transconductance VDS = 10V, ID = 40 A 115 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 15 V, V GS = 0 V, 2440 pF
Coss Output Capacitance f = 1.0 MHz 580 pF
Crss Reverse Transfer Capacitance 250 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.4 Ω
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
100 1.8
VGS = 10V 4.0V
DRAIN-SOURCE ON-RESISTANCE
VGS = 3.5V
6.0V 4.5V 1.6
ID, DRAIN CURRENT (A)
75
RDS(ON), NORMALIZED
3.5V
1.4
50 4.0V
1.2 4.5V
5.0V
25 6.0V
3.0V
1 10V
0
0.8
0 0.5 1 1.5 2
0 20 40 60 80 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
1.6 0.021
ID = 40A
DRAIN-SOURCE ON-RESISTANCE
1.4
RDS(ON), NORMALIZED
0.017
1.2
0.013
1
TA = 125oC
0.8 0.009
TA = 25oC
0.6
-50 -25 0 25 50 75 100 125 150 0.005
o 2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)
100 1000
VDS = 10V VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
100
80
ID, DRAIN CURRENT (A)
10 TA = 125oC
60
25oC
1
40 -55oC
TA = 125oC 0.1
25oC
20
0.01
-55oC
0 0.001
2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
10 4000
ID = 40A f = 1MHz
VGS, GATE-SOURCE VOLTAGE (V)
VGS = 0 V
8
VDS = 10V 3000
CAPACITANCE (pF)
6
Ciss
15V
2000
20V
4
Coss
1000
2
Crss
0 0
0 10 20 30 40 50 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
1000 5000
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJC = 2.2°C/W
4000
ID, DRAIN CURRENT (A)
10µs TA = 25°C
RDS(ON) LIMIT
100 100µs
1mS 3000
10mS
100mS
DC 2000
10 VGS = 10V
SINGLE PULSE
RθJA = 2.2oC/W 1000
TA = 25oC
1 0
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.1 P(pk
0.1
0.05 t1
t2
0.02
0.01 TJ - TA = P * RθJC(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1, TIME (sec)
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failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. I5
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