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FDP7030L / FDB7030L

June 2003

FDP7030L / FDB7030L
N-Channel Logic Level PowerTrench MOSFET

General Description Features


This N-Channel Logic Level MOSFET has been • 80A, 30 V RDS(ON) = 7 mΩ @ VGS = 10 V
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or RDS(ON) = 10 mΩ @ VGS = 4.5 V
conventional switching PWM controllers.
• Critical DC electrical parameters specified at
These MOSFETs feature faster switching and lower elevated temperature
gate charge than other MOSFETs with comparable
RDS(ON) specifications. • High performance trench technology for extremely
The result is a MOSFET that is easy and safer to drive low RDS(ON)
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency. • 175°C maximum junction temperature rating

It has been optimized for low gate charge, low RDS(ON)


and fast switching speed.

D D

G G
G S TO-263AB
D TO-220
S FDP Series FDB Series
S

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units


VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ± 20 V
ID Drain Current – Continuous (Note 1) 80 A
– Pulsed (Note 1) 240
PD Total Power Dissipation @ TC = 25°C 68 W
Derate above 25°C 0.4 W/°C
TJ, TSTG Operating and Storage Junction Temperature Range –65 to +175 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case 2.2 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information


Device Marking Device Reel Size Tape width Quantity
FDB7030L FDB7030L 13’’ 24mm 800 units
FDP7030L FDP7030L Tube n/a 45

2003 Fairchild Semiconductor Corporation FDP7030L / FDB7030L Rev E(W)


FDP7030L / FDB7030L
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 1)


WDSS Single Pulse Drain-Source VDD = 15 V, ID = 80 A 114 mJ
Avalanche Energy
IAR Maximum Drain-Source Avalanche 80 A
Current
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
∆BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C mV/°C
24
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
IGSS Gate–Body Leakage VGS = ± 20 V, VDS = 0 V ± 100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.9 3 V
∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C mV/°C
–5
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source On– VGS = 10 V, ID = 40 A 5.2 7 mΩ
Resistance VGS = 4.5 V, ID = 37 A 6.5 10
VGS= 10 V, ID = 40 A, TJ=125°C 7.2 11
ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V 60 A
gFS Forward Transconductance VDS = 10V, ID = 40 A 115 S

Dynamic Characteristics
Ciss Input Capacitance VDS = 15 V, V GS = 0 V, 2440 pF
Coss Output Capacitance f = 1.0 MHz 580 pF
Crss Reverse Transfer Capacitance 250 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.4 Ω

Switching Characteristics (Note 2)


td(on) Turn–On Delay Time VDD = 10V, ID = 1 A, 13 23 ns
tr Turn–On Rise Time VGS = 10 V, RGEN = 6 Ω 13 23 ns
td(off) Turn–Off Delay Time 42 68 ns
tf Turn–Off Fall Time 15 27 ns
Qg Total Gate Charge VDS = 15 V, ID = 40 A, 24 33 nC
VGS = 5 V
Qgs Gate–Source Charge 7 nC
Qgd Gate–Drain Charge 9 nC

Drain–Source Diode Characteristics and Maximum Ratings


IS Maximum Continuous Drain–Source Diode Forward Current 80 A
Drain–Source Diode Forward
VSD VGS = 0 V, IS = 40 A (Note 1) 0.9 1.3 V
Voltage
trr Diode Reverse Recovery Time IF = 40 A, 34 nS
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs 24 nC

Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDP7030L / FDB7030L Rev E(W)


FDP7030L / FDB7030L
Typical Characteristics

100 1.8
VGS = 10V 4.0V

DRAIN-SOURCE ON-RESISTANCE
VGS = 3.5V
6.0V 4.5V 1.6
ID, DRAIN CURRENT (A)

75

RDS(ON), NORMALIZED
3.5V

1.4
50 4.0V

1.2 4.5V
5.0V
25 6.0V
3.0V
1 10V

0
0.8
0 0.5 1 1.5 2
0 20 40 60 80 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with


Drain Current and Gate Voltage.

1.6 0.021
ID = 40A
DRAIN-SOURCE ON-RESISTANCE

VGS =10V ID = 40A


RDS(ON), ON-RESISTANCE (OHM)

1.4
RDS(ON), NORMALIZED

0.017

1.2

0.013
1
TA = 125oC

0.8 0.009

TA = 25oC
0.6
-50 -25 0 25 50 75 100 125 150 0.005
o 2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with


Temperature. Gate-to-Source Voltage.

100 1000
VDS = 10V VGS = 0V
IS, REVERSE DRAIN CURRENT (A)

100
80
ID, DRAIN CURRENT (A)

10 TA = 125oC
60
25oC
1

40 -55oC
TA = 125oC 0.1
25oC

20
0.01
-55oC

0 0.001
2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation


with Source Current and Temperature.

FDP7030L / FDB7030L Rev E(W)


FDP7030L / FDB7030L
Typical Characteristics

10 4000
ID = 40A f = 1MHz
VGS, GATE-SOURCE VOLTAGE (V)

VGS = 0 V
8
VDS = 10V 3000

CAPACITANCE (pF)
6
Ciss
15V
2000
20V
4
Coss
1000
2

Crss
0 0
0 10 20 30 40 50 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

1000 5000
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJC = 2.2°C/W
4000
ID, DRAIN CURRENT (A)

10µs TA = 25°C
RDS(ON) LIMIT
100 100µs
1mS 3000
10mS
100mS
DC 2000
10 VGS = 10V
SINGLE PULSE
RθJA = 2.2oC/W 1000
TA = 25oC

1 0
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE

D = 0.5 RθJC(t) = r(t) * RθJC


RθJC = 2.2 °C/W
0.2

0.1 P(pk
0.1
0.05 t1
t2
0.02
0.01 TJ - TA = P * RθJC(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE

0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

FDP7030L / FDB7030L Rev E(W)


TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I5
This datasheet has been download from:

www.datasheetcatalog.com

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