So PDS. 64K zeR] Rectifier IRFI540G HEXFET® Power MOSFET © Isolated Package © High Voltage Isolation= 2.5KVRMS © ‘© Sink to Lead Creepage Dist.= 4.8mm © 175°C Operating Temperature © Dynamic dv/dt Rating Fogion) = 0.0772 Low Thermal Resistance Voss = 100V Ip =17A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in ‘commercial-industrial applications. The moulding compound used provides a high isolation capability and a fow thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica bartier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single sorew fixing. 70-220 FULLPAK Absolute Maximum Ratings eee te _ Parameter lo@ Tc=25°C _| Continuous Drain Current, Ves @ 10 V lp @ Tc= 100°C _| Continuous Drain Current, Ves @ 10 V low Pulsed Drain Current_© Po @ To= _| Power Dissipation __ | Linear Derating Factor ae Ves Gate-to-Source Voltage Eas Single Pulse Avalanche Energy @ lan ‘Avalanche Current © oe Repetitive Avalanche Energy © ‘ak Diode Recovery dvidt & perating Junction and Storage Temperature Range E Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-82 or M3 screw _____ 10 tein (3.1. Nem) Thermal Resistance Parameter Min. Typ. Max. | Units Rac ‘Junction-to-Case = = 34 Pasa Junction-to-Ambient = = eo 681IRFI540G TOR! Electrical Characteristics @ Ty = 25°C (unless otherwise specified) I Parameter Min_| Typ. | Max. | Unis Test Conditions Vienioss _| Drain-to-Souree Breakdown Voltage | 100 | — | — | V__|Vas=0V, lo= 250uA. ‘AVeenpsslATs| Breakdown Voltage Temp. Cocificient_ | — | 0.13 | — | WFO [Reference to 25°C, lo= 1mA Rosion) _| Static Drain-to-Source On-Resistance | — | — [0077] @ |Vas=10V, ln=10A © Vosiey [Gate Threshold Voltage 20) — | 40 | V_|Vos=Vos, I= 2501A Qt | Forward Transconductance 94 | — 7 — TS [Vos=50V, Ip=10A 2 loss Drain-to-Souroe Leakage Current — = 2 a eared a eee |[Gate-to-Source Forward Leakage — | = [00 J, [Ves=20v [Gate-to-Source Reverse Leakage = [= F100 20V. [Q [Total Gate Charge = [= Te Oye Gate-to-Source Charge ee Oye [[Gate-to-Drain (‘Miller) Charge: = [= Vos=10V See Fig. 6 and 13 ® tajory [Tum-On Delay Time ——u [= Veo=50V t Rise Time = [T= 7 ig |lo=178 tan Tum-Off Delay = [3 T= Ro=9.10 ti Fall Time =[eT= Rox2.90 See Figure 10@ 1 Between lead, ? lo | Internal Drain Inductance — | 45) - 6mm (0.25in.) fi olen <5) Ls Internal Source Inductance -— 75) — ae onset & Cy [input Capacitance = [1700 — Ves=0V Coss Output Capacitance =) 360) — | PF |Voo= 28v Crs Reverse Transfer Capacitance — 120 f=1,0MHz_ Seo Figuto § Cc Drain to Sink Capacitance = [12 7 = J pF | f=1.0MHz Source-Drain Ratings and Characteristics Parameter Win | Typ. | Max] Units Test Conditions 5 | Continuous Source Current _|—lwe MOSFET symbol | (Body Diode) ‘a. Showing the (> Isa Pulsed Source Current _|—_!|e integral reverse = 14 (Body Diode) © pnjunction diode, Is Vso Diode Forward Voltage = | = [25 [V[T225°0, 1g=A7A, Ves=0V © ter Reverse Recovery Time =| 160 [360 [ns T=25°C, =t7A Qe Reverse Recovery Charge = [13 [26 Tuc |ailst-100as © fon Forward Tum-On Time Tnvinsic turn-on time is neglogible (turn-on is dominated by LerLb) Notes: © Repetitive rating; pulse width limited by @ Is0st7A, difdt<200A/us, VoosViarjss, © t60s, f=60Hz max. junction temperature (See Figure 11) Tsst75°C ® Voo=25V, starting T/=25°C, L=3.7mH © Pulse width < 300 us; duty cycle <2%. Rig=250, las=17A (See Figure 12) 582IER Ip, Drain Current (Amps) wt Fig 1. Ip, Drain Current (Amps) Fig 3. Typical Transfer Characteristics PULSE WIOTH c= 2500 rr on Vps, Drain-to-Source Voltage (volts) To=25°C Vos = 50¥ 20uS PULSE NTOTH See eeeeePeee recs Vas, Gate-to-Source Voltage (volts) Typical Output Characteristics, 0 IRFI540G Ip, Drain Current (Amps) | 2ous PULSE WOTH Tg = 1756C wt 0 a Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=175°C (Normalized) Rosion): Drain-to-Source On Resistance 0.9 O=AT TAO OBO AO BO BO 100 120 HAO TED 10D Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 583 ay SHEETS