TOSHIBA MpP4501 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR 4 IN 1) MP4501 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD Unit in mm SWITCHING aster erty 2s © Package with Heat Sink Isolated to Lead (SIP 12 Pin) © High Collector Power Di mn (4 Devices Operation) Pp=5W (Ta=25°C) © High Collector Current : Io (p¢)=3A (Max.) © High DC Current Gain: hyg=2000 (Min.) (Vom=2V, I¢=1.5A) © Diode Included for Absorbing Fly-Back Voltage. [Llosssors MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL | RATING | UNIT ]] coe paar one parr (Collector-Base Voltage Vono 120 VW e sti eetecron 310" eatooe (Collector-Emitter Voltage Vero 100 v_ fee [Bmitter-Base Voltage VEBO 6 v_|}SEDEC = IAS _ De Io 3 Collector Current ao is ; 4. |Irosmmma zazpia (Continuous Base Current ip a5 A__| Weight : 60g (Collector Power Dissipation (1. Device Operation) Pe 50 w (Collector Power Ta=25°C 50 Dissipation Pr w (4 Devices Operation) | Te=25°C 25 Isolation Voltage Visol 1000 °c Junction Temperature Ty 150 °c ‘Storage Temperature Range Tag | —85~150 | °C TOSHIBA is continually working to Improve the quality and rellabiity of ils products. Nevertheless, semiconductor devices in general can’ malfunction of fail due to their inherent electrical sensitivity and vulnerability to, physical stress. It's the responsibility of the buyer, when utlizing TOSHIBA products, to comply with the. standards of safety. in making a safe design for the enlie system, and to void situations in which @ malfunction or failure of such TOSHIBA roduets could cause loss of human lite, bodily inury or damage to property. In developing your designs, please enjure thet TORHIBA products oe’ used within specified operating ranger as set forth in the mast recent TOSRIBA products specications, Als, please keep in mind the precautlons and conations set forth in the “Handling Guide for Semiconductor Devices," or “TOSHIBA Semiconductor Rellabiity Handbook” ete @ The TOSHIBA products Iisted in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial ‘oboucs, domestic appliances, ete). These FOsniBAa products are neither intended ‘nor wartanted. for usage in equipment that requires extraordinary high ality and/or reliability ‘or-a, malfunction. of failure. of which may cause loss of human life or bodily” injury PUnimended usage"). Unintended Usoge incde atomic energy control insruments,siplane or spaceship infu transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products Inte in ths document shell be made” ot the customer’ (©The information contained herein is presented only. a guide forthe applications of our praducts. No responsibilty is assumed. by TOSHIBA. CORPORATION for any infringements of intellectual property or other fights of the third Parties which may result from its Use, No, license’ Is. granted by ‘implication of othe Property or other tights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. wise under any” intellectual 200TOSHIBA Mp4501 ARRAY CONFIGURATION L 3 2 0 a 5 8 12 1 a a 6 i eT RL Re R1=4.5k0 _ R2~3000 THERMAL CHARACTERISTICS (CHARACTERISTIC ‘SYMBOL UNIT ‘Thermal Resistance of Junction to Am F (4 Devices Operation, Ta=25°C) 2Rih a) 2 | “rw ‘Thermal Resistance of Junction to Case (4 Devices Operation, Te=25°C) PRingo 5.0 | c/w ‘Maximum Lead Temperature for Soldering Purposes (8.2mm from Case for 10s) ™ 260 c ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC | SYMBOL ‘TEST CONDITION MN, | TYP. [MAx. UNIT (Collector Cutolf Current Toso |Von=120V, Tp eC (Collector Cutoff Current Ico _|VoR=100V, In=0 = |= [fa Emitter Cut-off Current Ippo os) — | 2.5] ma Collector-Base Breakdown Voltage (BR) CBO| vor | a Y Collector-Emitter Breakdown Voltage (BR) CEO|Io=10mA, Ip=0 roy ~[-[¥ DC Current Gain brea) |Von=2V, Io=15A 2000 | — [15000 beg (2) |Voe=2V, 1o=3A i000| — | — Saturation | Collector-Emitter | Vop (sat) [I0=1.5A, Ip=3mA = |= Tas, Voltage | Base-Emitter | Vip (gat) [IC=1.5A, Ip=3mA — |= | 20 ‘Transition Frequency fp Vop=2V, I¢=0.5A — | oo | — [ame (Collector Output Capacitance | Cop | VoB=10V, Ip=0, f=1MHz = | 30 [= [or ‘arn-on Time 20us —|oa | - Torn-on TY fon i INpuT Thos [Storage Time | tag Ip Ape —|20} — | ys 1p1=-Ip2=3mA, Fall Time cs DUTY CYCLE=1% ~{“ {= 2000-08-21 215TOSHIBA MpP4501 EMITTER-COLLECTOR DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION MIN. | TyP. |MAX. | UNIT [Maximum Forward Current | IPM = —|[-J sta [Surge Current Ipgm | t=ls, 1 shot —|[-J| «/a Forward Voltage Vr Ip=1A, Ip=0 — [12] ist v Reverse Recovery Time toy Ip=3A, Vpp=—3V, = [10] - [is Reverse Recovery Charge Qrr dig /dt=—50A/ ps = 5| — |. FLYBACK-DIODE RATINGS AND CHARACTERISTICS (Ta =25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION MIN, | TYP. | MAX. | UNIT [Maximum Forward Current | IrM = —|[-—] 3Ta Reverse Current, Ik VR=120V —[-— [os Ta Reverse Voltage Vr | Ip=1002A wo|—[- |v Forward Voltage Vr Tp=0.5A, —[-Jistv 2000-08-21 3/5