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Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 2.2 ℃/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 25 ℃/W
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=30A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=10A, VGS=0V, - 35 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 32 - nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state.
4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A.
2
AP3R303GMT-HF
250 160
o
T C =25 C 10V o
T C =150 C 10V
7.0V 7.0V
200
6.0V 6.0V
5.0V
120
5.0V
150
V G =4.0V
V G = 4.0 V
80
100
40
50
0 0
0.0 1.0 2.0 3.0 4.0 0.0 2.0 4.0 6.0 8.0
5.2 2.0
I D =20A I D =30A
T C =25 o C V G =10V
4.4 1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
3.6 1.2
2.8 0.8
2 0.4
2 4 6 8 10 -50 0 50 100 150
o
V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C)
T j =150 o C T j =25 o C
Normalized VGS(th) (V)
1.2
20
IS(A)
0.8
10
0.4
0 0.0
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150
3
AP3R303GMT-HF
8
f=1.0MHz
2000
I D =30A
VGS , Gate to Source Voltage (V)
1600
6
V DS =15V
V DS =18V C iss
C (pF)
1200
V DS =24V
4
800
2
400 C oss
C rss
0 0
0 4 8 12 16 20 24 1 5 9 13 17 21 25 29
1000 1
100 0.2
100us
ID (A)
0.1
0.1
0.05
1ms PDM
10 t
T
0.02
Single Pulse
DC Single Pulse
1 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
VDS VG
90%
QG
4.5V
QGS QGD
10%
VGS
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform