SCR 250

VSK.170PbF, VSK.
250PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode

(MAGN-A-PAK Power Modules), 170 A/250 A
FEATURES
• High voltage
• Electrically isolated base plate
• 3500 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
MAGN-A-PAK
• Designed and qualified for industrial level
DESCRIPTION
This new VSK series of MAGN-A-PAK modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
PRODUCT SUMMARY electrically isolated from the metal base, allowing common
IT(AV) 170 A/250 A heatsinks and compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.
MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VSK.170.. VSK.250.. UNITS
IT(AV) 85 °C 170 250
IT(RMS) 377 555
A
50 Hz 5100 8500
ITSM
60 Hz 5350 8900
50 Hz 131 361
I2t kA2s
60 Hz 119 330
I2t 1310 3610 kA2s
VDRM/VRRM Up to 1600 Up to 2000 V
TJ Range - 40 to 130 °C
Document Number: 94417 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
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VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors SCR/SCR and SCR/Diode
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM/VDRM, MAXIMUM REPETITIVE VRSM, MAXIMUM IRRM/IDRM
VOLTAGE PEAK REVERSE AND OFF-STATE NON-REPETITIVE PEAK AT 130 °C
TYPE NUMBER
CODE BLOCKING VOLTAGE REVERSE VOLTAGE MAXIMUM
V V mA
04 400 500
08 800 900
10 1000 1100
VSK.170- 50
12 1200 1300
14 1400 1500
16 1600 1700
04 400 500
08 800 900
10 1000 1100
50
12 1200 1300
VSK.250-
14 1400 1500
16 1600 1700
18 1800 1900
60
20 2000 2100
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Maximum average on-state current IT(AV) 170 250 A
180° conduction, half sine wave
at case temperature 85 85 °C
Maximum RMS on-state current IT(RMS) As AC switch 377 555
t = 10 ms No voltage 5100 8500
Maximum peak, one-cycle on-state t = 8.3 ms reapplied 5350 8900 A
ITSM
non-repetitive, surge current t = 10 ms 100 % VRRM 4300 7150
Sinusoidal
t = 8.3 ms reapplied half wave, 4500 7500
t = 10 ms No voltage initial TJ = 131 361
reapplied TJ maximum
t = 8.3 ms 119 330
Maximum I2t for fusing I2t kA2s
t = 10 ms 100 % VRRM 92.5 255
t = 8.3 ms reapplied 84.4 233
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 1310 3610 kA2s
(16.7 % x  x IT(AV) < I <  x IT(AV)),
Low level value or threshold voltage VT(TO)1 0.89 0.97
TJ = TJ maximum V
High level value of threshold voltage VT(TO)2 (I >  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 1.12 1.00
(16.7 % x  x IT(AV) < I <  x IT(AV)),
Low level value on-state slope resistance rt1 1.34 0.60
TJ = TJ maximum m
High level value on-state slope resistance rt2 (I >  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.96 0.57
ITM =  x IT(AV), TJ = TJ maximum, 180° conduction,
Maximum on-state voltage drop VTM 1.60 1.44 V
average power = VT(TO) x IT(AV) + rf x (IT(RMS))2
Maximum holding current IH Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500 500
Anode supply = 12 V, resistive load = 1 , mA
Maximum latching current IL 1000 1000
gate pulse: 10 V, 100 μs, TJ = 25 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94417
2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 02-Jul-10

SCR/SCR and SCR/Diode Vishay Semiconductors
SWITCHING
Typical delay time td TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs 1.0
Typical rise time tr Vd = 0.67 % VDRM 2.0
μs
ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum;
Typical turn-off time tq 50 to 150
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 
BLOCKING
Maximum peak reverse and IRRM,
TJ = TJ maximum 50 60 mA
off-state leakage current IDRM
RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V
Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/μs
TRIGGERING
Maximum peak gate power PGM tp  5 ms, TJ = TJ maximum 10.0
W
Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 2.0
Maximum peak gate current + IGM tp  5 ms, TJ = TJ maximum 3.0 A
Maximum peak negative gate voltage - VGT tp  5 ms, TJ = TJ maximum 5.0
TJ = - 40 °C 4.0
Anode supply = 12 V, V
Maximum required DC gate voltage to trigger VGT TJ = 25 °C 3.0
resistive load; Ra = 1 
TJ = TJ maximum 2.0
TJ = - 40 °C 350
Anode supply = 12 V,
Maximum required DC gate current to trigger IGT TJ = 25 °C 200 mA
resistive load; Ra = 1 
TJ = TJ maximum 100
Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.25 V
Maximum gate current that willnot trigger IGD TJ = TJ maximum, rated VDRM applied 10.0 mA
TJ = TJ maximum, ITM = 400 A,
Maximum rate of rise of turned-on current dI/dt 500 A/μs
rated VDRM applied
THERMAL AND MECHANICAL SPECIFICATIONS

Junction operating and storage
TJ, TStg - 40 to 130 °C
temperature range
Maximum thermal resistance,
RthJC DC operation 0.17 0.125
junction to case per junction
K/W
Typical thermal resistance,
RthCS Mounting surface flat, smooth and greased 0.02 0.02
case to heatsink per module
A mounting compound is recommended
MAP to heatsink
and the torque should be rechecked after
Mounting torque ± 10 % 4 to 6 Nm
a period of about 3 hours to allow for the
busbar to MAP
spread of the compound.
500 g
Approximate weight
17.8 oz.
Case style MAGN-A-PAK

R CONDUCTION PER JUNCTION

SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM
DEVICES UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033
K/W
VSK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
130 300
Maximum Average On-state Power Loss (W)

VSK.170.. Series
Maximum Allowable Case Temperature (°C)
180°
RthJC (DC) = 0.17 K/W
120 120°
250 90°
60°
110
200 30°
100 Conduction Angle
150 RMS Limit

90
30° 100 Conduction Angle

80 60°
90° VSK.170.. Series
70 120° 50 Per Junction
180° TJ = 125°C
60 0
0 40 80 120 160 200 0 40 80 120 160 200
Average On-state Current (A) Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics Fig. 3 - On-State Power Loss Characteristics
130 350
VSK.170.. Series DC
R thJC (DC) = 0.17 K/W 180°
120 300
120°
90°
110 250 60°
30°
100 Conduction Period 200
RMS Limit
90 150
30°
60° Conduction Period
80 100
90°
VSK.170.. Series
120°
70 50 Per Junction
180°
DC TJ = 125°C
60 0
0 50 100 150 200 250 300 0 50 100 150 200 250 300

5000 5000
Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With Maximum Non Repetitive Surge Curren t
Rated VRRM Applied Following Surge. Versus Pulse Train Duration. Control
4500 Initial TJ = 130°C 4500 Of Conduction May Not Be Maintained .
@ 60 Hz 0.0083 s Initial TJ = 130°C
@ 50 Hz 0.0100 s No Voltage Reapplied
4000 4000 Rated VRRM Reapplied
3500 3500
3000 3000
2500 2500
VSK.170.. Series VSK.170.. Series
Per Junction Per Junction
2000 2000
1 10 100 0.01 0.1 1
Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
400
Maximum Total On-state Power Loss (W)
180° 0.
0.
0.1
R th S
0. 0
2
16
0. K/
120°
8
350 25 W
K/
K/
K/
A
W
90° K/
=0
W
0. W
3
60° K/
.04
300 W
30°
K/ W
0.3
-D
250 5 K/W
e lt
aR
150
100
VSK.170.. Series
50 Per Module
TJ = 130°C
0
0 50 100 150 200 250 300 350 400
0 20 40 60 80 100 120
Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
1000
Maximum Total Power Loss (W)
R th
0.
900
04
0.
0.
08
S
K/
06
0. K/
W
=0
800 1
K/
K/ W
W
W
. 02
0.1
700
K/
2K
W
180° 0. 1 /W
-D
600 (Sine) 6 K/
e lt
W
180°
a
0 .2
500 K/ W
R
(Rect) 0. 2
5K
400 /W
0.35
K/ W
300 2 x VSK.170.. Series
200 Single Phase Bridge
Connected
100 TJ = 130°C
0
0 50 100 150 200 250 300 0
350 20 40 60 80 100 120
Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

1600
R th
0.
0.
1400 05
03
K/
SA
K/
W
=0
1200
.01
0.0
8K
K/
/W
W
1000 120°
-D
0. 1
(Rect)
el t
K/
W
aR
800 0. 1
2K
/W
0. 1 6
600 K/ W
3 x VSK.170.. Series 0.25
K/ W
400 Three Phase Bridge
Connected
200 TJ = 130°C
0
0 100 200 300 400 500
0 20 40 60 80 100 120
130 350

VSK.250.. Series
180°
RthJC(DC) = 0.125 K/W
120 300 120°
90°
60°
110 250 30°

200 RMS Limit
90 150
30° Conduction Angle
80 60° 100
90° VSK.250.. Series
70 120° Per Junction
50
180° TJ = 130°C
60 0
0 50 100 150 200 250 300 0 50 100 150 200 250
130 500
VSK.250.. Series
DC
RthJC (DC) = 0.125 K/W 450
120 180°
400 120°
90°
110 350 60°
300 30°
100 Conduction Period
250
90 RMS Limit
30° 200
60° 150 Conduction Period
80
90°
100 VSK.250.. Series
70 120° Per Junction
180° DC 50 TJ = 130°C
60 0
0 100 200 300 400 500 0 50 100 150 200 250 300 350 400

7500
9000

At Any Rated Load Condition And With Maximum Non Repetitive Surge Curren t
Rated VRRM Applied Following Surge. Versus Pulse Train Duration. Control
7000
Initial TJ = 130°C 8000 Of Conduction May Not Be Maintained .
@ 60 Hz 0.0083 s Initial TJ = 130°C
6500
@ 50 Hz 0.0100 s No Voltage Reapplied
7000 Rated VRRM Reapplied
6000
5500 6000
5000
5000
4500
4000
4000 VSK.250.. Series VSK.250.. Series
Per Junction Per Junction
3500 3000
1 10 100 0.01 0.1 1
Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s)
Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
700
Maximum Total On-state Power Loss (W)
0.0
R th
0.
0.
12
08
5K
180° K/
S
K/
600
A
/W
W
=0
120°
0.
.02
90° 16
K/
K/
500 60° W
W
Conduction angle 0.2
-D
30° 0
K/
e lt
W
400 0.2
a
5K
R
/W
300 0.3
K/ W
200
VSK.250.. Series
100 Per Module
TJ = 130°C
0
0 100 200 300 400 500 0
600 20 40 60 80 100 120
Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C)
1400
0.0
0.
Rt
0.
04
03
2K
hS
0. K/
K/
1200 05
/W
W
=0
W
K/
W
. 01
0.0
K/
1000 6
W
K/
180° W
-D
(Sine)
e lt
800
aR
180° 0 .1
K/ W
(Rect) 0.1
600 2K
/W
0 .16
K/ W
400 2 x VSK.250.. Series
Single Phase Bridge 0 .3 K
/W
200 Connected
TJ = 130°C
0
0 100 200 300 400 500
0 20 40 60 80 100 120

2000
0.
0.
05
0.
04
1800
R th
K/
03
K/
W
K/
W
SA
0.
W
1600 06
=0
K/
W
.01
0 .0
1400 8K
K/ W
/W
120°
1200 0.1
-D
(Rect) K/
W
e lt
0. 1
aR
1000 2K
/W
0.1
800 6K
/W
0.2
600 0K
3 x VSK.250.. Series /W
Three Phase Bridge 0.25
400 K/ W
Connected
200 TJ = 130°C
0
0 100 200 300 400 500 600 700
0 20 40 60 80 100 120
Typical Reverse Recovery Charge - Qrr (µC)

10000 1800
VSK.170.. Series
ITM = 800 A
1600 TJ = 130 °C
Instantaneous Forward Current (V)
Tj = 25°C Per Junction

Tj = 130°C 1400 500 A
1200 300 A
200 A
1000 1000
100 A
800
50 A
600
VSK.170 Series 400

Per Junction
100 200
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 10 20 30 40 50 60 70 80 90 100
Instantaneous Forward Voltage (V) Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 19 - On-State Voltage Drop Characteristics Fig. 21 - Reverse Recovery Charge Characteristics
Typical Reverse Recovery Charge - Qrr (µC)
10000 2400
VSK.250.. Series
2200 TT ==130 ITM = 800 A
JJ 130°C°C
PerJunction
2000 Per Junction
Instantaneous Forward Current (V)
500 A
300 A
Tj = 25°C 1800
Tj = 130°C 200 A
1600
100 A
1400
1000
1200 50 A
1000
800
600
VSK.250 Series
Per Junction 400
100 200
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 10 20 30 40 50 60 70 80 90 100
Instantaneous Forward Voltage (V) Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 20 - On-State Voltage Drop Characteristics Fig. 22 - Reverse Recovery Charge Characteristics

100
Rectangular gate pulse (1) PGM = 10W, tp = 4ms
a) Recommended load line for (2) PGM = 20W, tp = 2ms
Instantaneous Gate Voltage (V)

rated di/dt : 20 V, 10 ohms; tr < =1µs (3) PGM = 40W, tp = 1ms
b) Recommended load line for (4) PGM = 60W, tp = 0.66ms
<=30% rated di/dt : 10V, 20ohms
10 tr<=1 µs (a)
(b)
Tj=-40 °C
Tj=25 °C
Tj=125 °C
1
(1) (2) (3) (4)
VGD
IGD VSK.170/250 Series Frequency Limited by PG(AV)

0.1
0.001 0.01 0.1 1 10 100
Instantaneous Gate Current (A)
Fig. 23 - Gate Characteristics
1
Transient Thermal Impedance Z thJC (K/W)
Steady State Value:

R thJC = 0.17 K/W VSK.170.. Series
R thJC = 0.125 K/W
0.1 (DC Operation)
VSK.250.. Series
0.01
0.001
0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
Fig. 24 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code VSK T 250 - 20 PbF
1 2 3 4 5
1 - Module type
2 - Circuit configuration (see dimensions - link at the end of datasheet)
3 - Current rating
4 - Voltage code x 100 = VRRM (see Voltage Ratings table)
5 - None = Standard production
PbF = Lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172

CIRCUIT CONFIGURATION
VSKT... VSKH... VSKL...
~ ~ ~ ~ ~ ~
+ + + + + +
- - -
- - -
Available from 400 V to 1600 V for VSK.170PbF Series,
K1G1 G2 K2 K1G1 available from 400 V to 2000 V for VSK.250PbF Series
VSKU... VSKV...
+ + - -
- - + +
- +
- +
Available up to 1200 V,
K1G1 G2 K2 K1G1 G2 K2 contact factory for different requirement
LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95086

Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1

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VSK.170PbF, VSK.

SCR/SCR and SCR/Diode

MAJOR RATINGS AND CHARACTERISTICS

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THERMAL AND MECHANICAL SPECIFICATIONS

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R CONDUCTION PER JUNCTION

Maximum Average On-state Power Loss (W)

100 Conduction Angle

150 RMS Limit

30° 100 Conduction Angle

Fig. 1 - Current Ratings Characteristics Fig. 3 - On-State Power Loss Characteristics

Fig. 2 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics

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Peak Half Sine Wave On-state Current (A)

Fig. 7 - On-State Power Loss Characteristics

Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 8 - On-State Power Loss Characteristics

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Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 9 - On-State Power Loss Characteristics

Maximum Average On-state Power Loss (W)

100 Conduction Angle

Fig. 10 - Current Ratings Characteristics Fig. 12 - On-State Power Loss Characteristics

Average On-state Current (A) Average On-state Current (A)

Fig. 11 - Current Ratings Characteristics Fig. 13 - On-State Power Loss Characteristics

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Peak Half Sine Wave On-state Current (A)

Fig. 17 - On-State Power Loss Characteristics

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Fig. 18 - On-State Power Loss Characteristics

Typical Reverse Recovery Charge - Qrr (µC)

Tj = 25°C Per Junction

VSK.170 Series 400

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Instantaneous Gate Voltage (V)

IGD VSK.170/250 Series Frequency Limited by PG(AV)

Fig. 23 - Gate Characteristics

Steady State Value:

Fig. 24 - Thermal Impedance ZthJC Characteristics

ORDERING INFORMATION TABLE

Device code VSK T 250 - 20 PbF

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LINKS TO RELATED DOCUMENTS

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Document Number: 91000 www.vishay.com

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