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Vin
iL k 2 (t) = −Ipri + (t − t2 ). (4)
Lm 1 + Lk 1
iL m 1 and iL m 2 increase linearly from Ipri + Isec /n and -
(Ipri + Isec /n)
Isec Vin
iL m 1 (t) = Ipri + + (t − t2 ) (5)
n Lm 1 + Lk 1
Isec Vin
iL m 2 (t) = −Ipri − + (t − t2 ). (6)
n Lm 1 + Lk 1
At the middle of this stage, iL k 2 changes its direction from
negative to positive since the absolute value of iL m 2 is smaller
than ip2 (= −is2 /n = Isec /n).
Stage 4 [t3 , t4 ]: At t3 , Sm is turned OFF. CSm starts charging
and CDsn and CSr begin to discharge. At this stage, the capacitor
CDsn (which is the parasitic capacitor of the snubber diode Dsn )
is considered because the leakage current flows through Dsn .
However, since CSm , CDsn , and CSr are very small, the transi-
tion time is very short. Hence, iL m 1 and iL m 2 can be regarded
as constant values— IL m 1(m ax) and -IL m 2(m ax) , respectively.
Stage 5 [t4 , t5 ]: When vSm reaches 2Vin , Dsn and DSr start
conducting. The leakage inductance energy of Lk 1 is stored into
C1 . For Lk 2 , the leakage inductance energy is stored into the
input source. This time interval is closely related to the voltage
vL k 1 (= vL k 2 ). iL k 1 and iL k 2 are expressed as follows:
1
iL k 1 (t) = IL k 1(m ax) − (Vin − nVo ) (t − t4 ) (7)
Lk 1
1
iL k 2 (t) = IL k 2(m ax) − (Vin − nVo ) (t − t4 ). (8)
Lk 2
Stage 6 [t5 , t6 ]: When iDsn is zero and Dsn is turned OFF,
this stage begins. On the primary side, only Ipri flows through
Lk 1 , C1 , and Lk 2 . After a short delay called a dead time, the
gate signal is applied to Sr under the ZVS condition. The current
iSr increases linearly with a slope of 2n2 Vo /Lm 1 . At the end
of this stage, iSr changes its direction from negative to positive.
By turning the SR OFF after a short delay, the absolute value of
is2 becomes larger than that of is1 . This differential current is
essential for the ZVS operation of Sm .
Because vb e is lower than Vb e(sat) , Qa enters a breakdown Stage C [tb , tc ]: When vce is higher than VIH , which is
region. vce increases nonlinearly with the time constant of an the logic 1 input voltage of the MOSFET driver, the gate signal
YANG AND DO: SOFT-SWITCHING DUAL-FLYBACK DC–DC CONVERTER WITH IMPROVED EFFICIENCY AND REDUCED OUTPUT RIPPLE CURRENT 3591
vb e (t) = VF (D a) + Ra iRb (t) + RDS(on) iSr (t) (12) Tdead−tim e < TZVS Sr (20)
Vcc − vb e (t) where Tdead−tim e is the dead time of both Sm and Sr for proper
iRb (t) = (13)
Rb ZVS operation. TZVS S m and TZVS S r are the time intervals
2n2 Vo when each switch is reverse biased and the current flows through
iSr (t) = −IS r (m in) + (t − tb ). (14) its intrinsic body diode.
Lm 1
Since TZVS S r is sufficiently longer than Tdead−tim e , the
Stage D [tc , td ]: At tc , iSr changes its direction from neg- ZVS operation of Sr is always satisfactory. When consider-
ative to positive. Since vb e is still lower than Vb e(sat) , Sr is ing Tdead−tim e and TZVS S m , the time interval between t0 and
turned ON t1 can be omitted because this time interval is very short. From
iL m 1 in Fig. 4, the following equation is obtained:
2n2 Vo
vb e (t) = VF (D a) + Ra iRb (t) + RDS(on) (t − tc ).
Lm 1 Isec Vin
(15) Ipri + − IL m 1(m in) = TZVS Sm
n Lm 1 + Lk 1
To compensate for the difference between VF (D a) and
Vb e(sat) , Ra is added in series with Da . By adjusting Ra , the nVo
= Δtcd . (21)
turn-on time of Sr can be easily controlled. At the end of this Lm 1
stage, vb e reaches vb e(sat) , and then, Sr is turned OFF. vb e(sat)
From (19) and (21), the ZVS condition of Sm can be
is obtained by
rewritten
2n2 Vo
vb e(sat) = VF (D a) + Ra iRb (td ) + RDS(on) Δtcd (16) nVo (Lm 1 + Lk 1 )
Lm 1 Tdead−tim e < Δtcd . (22)
Vin Lm 1
Vcc − vb e(sat)
iRb (td ) = (17)
Rb V. DESIGN PROCEDURE
where Δtcd is the time interval between tc and td . In order to verify the theoretical analysis, the following design
From (16) and (17), Δtcd can be expressed as specifications are determined. Vin = 340 V, Vo = 24 V, Po =
100 W, and minimum switching frequency fSW (m in) = 45 kHz.
Ra + Rb Ra For a simple circuit analysis, the leakage inductances and the
Δtcd = Vb e(sat) − VF (D a) − Vcc
Rb Rb transition times in both stages 1 and 4 are not considered.
Lm 1
× . (18)
2n2 Vo RDS(on) A. Duty Cycle
Hence, it is possible to control the time interval Δtcd (related From iL m 1 , the following equation is obtained:
to the ZVS operation of Sm ) by adjusting the resistance of Ra .
Vin nVo
IL m 1(m ax) − IL m 1(m in) = Ton = Toff . (23)
Lm 1 Lm 1
IV. ZVS CONDITION OF THE MAIN SWITCH
In order to achieve ZVS operations for Sm and Sr , the gate From (23), the duty cycle D is expressed as
signal should be applied to each switch before the current flow-
ing through the intrinsic body diode becomes zero. The follow- nVo
D= . (24)
ing equations are satisfactory conditions for the ZVS operations Vin + nVo
3592 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 64, NO. 5, MAY 2017
B. Continuous Current
By assuming the leakage inductance to be zero, the average
input and output currents in a switching period are given by
Vin
Iin(avg) = Ipri + D 2 TS (25)
2Lm 1
n2 Vo
Iout(avg) = Isec + (1 − D)2 TS . (26) Fig. 10. Structure of the coupled inductor.
2Lm 1
Since the snubber current is not considered, the input current If n = 12 is selected, D = 0.45 is obtained. By substituting
is the sum of the continuous current for charging C1 and the Vin = 340 V, D = 0.45, TS = 22 μs, and Iin(avg) = 0.294 A
charging current flowing through Lm 1 . Because the magnetizing in (28), Lm 1 = 5.1 mH is calculated. Since the leakage induc-
inductances of both the coupled inductors are designed to be tance is not considered in the design procedure, the experimen-
equal, one half of the input power is transferred to the secondary tal value of Lm 1 (= Lm 2 ) would be different. The reason is that
side by Lm 1 and the other half is transferred by Lm 2 . Therefore, some of the magnetizing inductance energy is not transferred
Ipri is half of the input current, Ipri = 0.5 Iin(avg) . to the secondary side. This energy is moved to the input source
Similarly, the output current is the sum of the continuous and the primary dc-bus capacitor by each leakage inductor.
current for discharging C2 and the discharging current flowing
through Lm 2 . Since one half of the output power is transferred D. Determination of Switching Frequency
from the primary side by Lm 1 and the other half is transferred by
Lm 2 , Isec is also half of the output current, Isec = 0.5 Iout(avg) . The input current can be expressed as an average current of
iSm as follows:
C. Design of Coupled Inductors Vin
Iin = iS m (avg) = D 2 TS . (29)
Lm 1 + Lk 1
The determination of the turn ratio n is important for trans-
ferring the input power to the load. When the main switch is By substituting TS = 1/fsw and Vin Iin = Pin = Pout into
turned OFF and the primary voltage of the coupled inductor nVo (29), the switching frequency fsw can be written as follows:
is lower than Vin , the magnetizing inductance energy is trans- 2
ferred to the secondary side. However, if the primary voltage is Vin 2 nVo
fsw = . (30)
higher than the input voltage, the coupled inductor acts only as Po (Lm 1 + Lk 1 ) Vin + nVo
an inductor, and not as a transformer. Therefore, the maximum
turn ratio n is determined by VI. EXPERIMENTAL RESULTS
Vin From the design procedure, the design parameters of the ex-
n< . (27) perimental prototype are obtained as follows: Lm 1 = Lm 2 =
Vo
3.7 mH, n = 12, C1 = 200 μF, C2 = 6.6 mF, and Co =
By substituting Ipri = 0.5Iin(avg) in (25), Lm 1 can be 6.6 mF. Fig. 9 shows the experimental prototype circuit. Fig. 10
obtained by shows the structure of the coupled inductor.
Fig. 11 shows the experimental waveforms of vSW , iL k 1 ,
Vin D2 TS and is1 (= iout ) at Po = 100 W. Since half of the input power
Lm 1 = . (28)
Iin(avg) is transferred to C1 , the leakage inductor current is floating
YANG AND DO: SOFT-SWITCHING DUAL-FLYBACK DC–DC CONVERTER WITH IMPROVED EFFICIENCY AND REDUCED OUTPUT RIPPLE CURRENT 3593
VII. CONCLUSION
Fig. 12. ZVS operations of S m and S r at 100 W: (a) v S m , v g s S m , iS m , In this paper, a soft-switching dual-flyback dc–dc converter
(b) v S r , v g s S r , iS r .
was proposed. By replacing the output diode with an SR, the
conduction loss was minimized. The ZVS operation of the main
because of the continuous current. Similarly, the output current switch was achieved by turning the self-driven SR OFF, after
is also floating since half of the output power is stored in C2 and a short delay. In addition, the reprocessed transformer leakage
is transferred to the output capacitor by the continuous current. inductance energy was maximized because there was only one
Fig. 12(a) and (b) shows the ZVS operations of Sm and Sr snubber current path. Moreover, its output ripple current was
at 100 W, respectively. Before the gate signal is applied to each reduced owing to the continuous current. Consequently, the pro-
switch, the switch voltage is zero. posed converter satisfied both the high efficiency and reduced
Fig. 13 shows the measured efficiencies of the proposed con- output ripple current conditions.
verter and the conventional flyback converters with RCD and
LCD snubbers shown in Fig. 1(a) and (b). The controller power REFERENCES
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covery effect on the improvement of soft-switching range in zero-voltage- and control of power converters, soft-switching power converters, reso-
transition bidirectional converters,” IEEE Trans. Ind. Electron., vol. 62, nant converters, power factor correction circuits, and driving circuits for
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