TOSHIBA GT15J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15J101 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS saws 932202, © High Input Impedance © High Speed : =U.35 ys (Max.) ¢ Low Saturation Voltage : Vox (gat) =4.0V (Max.) © Enhancement-Mode MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC sympou | rain | uNIr Collector-Emitter Voltage Vors 600 Vv Gate-Emitter Voltage Vors | +20 v 1 Gate pe Ic 15 2, COLLECTOR (HEAT SINK) Collector Current ims Top 30 A 2 COLLECTOR ( (Collector Power Dissipation [JEDEC = (Ten35°0) Po wo | w iS = [Junction Temperature Ty 160 | °c |frosmpa 216c1¢ Storage Temperature Range Tog | —85~150 | “C_| Weight : 46g ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC | SYMBOL TEST CONDITION wan. | vp. | Max. | UNIT Gate Leakage Current TGES 20V, VoR=0 = | = [500] ma Collector Cutoff Current Tors | Vor=600V, Vor — [= J 20) aa Gate-Emitter Cutoff Voltage | Var (OFF)|I0-16mA, Von -5V 30 | — | 60] v Collector-Emitter - - : Saturation Voltage Vor (sat) |I0=15A, Vor=15V — | 30} 40} v Input Capacitance Cies OV, Vap=0, — [i100 | = | oF Rise Time te vour |_— | 030] 0.60 yy ¢ Switehing [Twrmon Time| ton | Bak Te = [e4o| oso] Time Fall Time a wy — | 015] 035 16V Turnoff Time | tof Voo=s00v | — [050] 1.001 sciess2 ° TORa Sa SO Sra ea are Oee B R Sae en o, Se e RNR ei al fe ae eae UAL nahin yet Te a al ace ge ea Ba adh eS ph dl ger cS ite tte atras Ot rnd ony a» an fm ple oo gods, No cermin is navn by Tobe Te ia ee et haa © ORMEA CORPORATION oF ch 7997-02-03 13TOSHIBA GT15J101 Io = Vor . Yer - Var z ol ul eae B | 5 / 5 § 2 2 B ] 5 E 10 a By 2 3 iF E 3 Vout 5 SS + i i COLLECTOREMIITER VOLTAGE. Vos) caTEswren voutAcE Vee «> — Vor - Var _ Vor ~ Vor Bo | ttre s 5 < 5 2 4 < 2 | {| : * : Be Se SE caTe-euimen voItAcE Vee «9 Gar-eurre voutAce. Vee o> Ie = Vor . Ver. Vor = 06 E 3 3 & * 2 common nurrm | = = £ E 0 i : > i 3 5 i é : 3 E ho : 8 0 20 0 0 Bo To caTeeuimen vourAcE Vee «> Game cuanar a 6 7997-02-03 2/3TOSHIBA GT15J101 SWITCHING TIME. Gm) CAPACITANCE © OF) (COUECTOR CURRENT Ie SWITCHING TIME ~ Ic SWITCHING TIME ~ Rg COMMON ExrTTEn 4[ convo eure Wor 00 eae Yes 2 a °. i é fe Zo oa| fen 3 4 Bool a pe ° | so a LT | ol of PT} i titi s ote COLLECTOR CURRENT Ie.) c - Vor Vop=0 Tene ts 8 mw 8 100 a00s0 1000 COLLECTOREMITTER VOLTAGE Vor () SARE OPERATING AREA Tak HET & SINGLE | Purse te=250 ne ELATED LINEARLY {WITH INCREASE IN o. tf ‘b505-1 3-5 30.50 100300500 1000 COLLECTOREMITTER VOLTAGE. Vor «) [TRANSIENT THERNAL RESISTANCE. Tan ech , : é § a GATE RESISTANCE Rg «M) Reh) = tw 10 w+ ww 1 1 0? aw oho PULSE WIDTH ty @) REVERSE BIAS SOA Re=1502 Tao 300-300 —w4o Sa —F00—F00 COLLECTOR-EMITTER VOLTAGE Vox «) 7997-02-03_3/3