IRLML5103PbF

l Generation V Technology HEXFET® Power MOSFET

l Ultra Low On-Resistance
l P-Channel MOSFET
G 1
l SOT-23 Footprint VDSS = -30V
l Low Profile (<1.1mm)
3 D
l Available in Tape and Reel
l Fast Switching
l Lead-Free S 2 RDS(on) = 0.60Ω
l RoHS Compliant, Halogen-Free

Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

A customized leadframe has been incorporated into the

Micro3™
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.

Standard Pack
Base Part Number Package Type Orderable Part Number
Form Quantity
IRLML5103TRPbF Micro3™ (SOT-23) Tape and Reel 3000 IRLML5103TRPbF

Absolute Maximum Ratings

Parameter Max. Units
I D @ TA = 25°C Continuous Drain Current, VGS @ -10V -0.76
I D @ TA = 70°C Continuous Drain Current, VGS @ -10V -0.61 A
IDM Pulsed Drain Current  -4.8
PD @TA = 25°C Power Dissipation 540 mW
Linear Derating Factor 4.3 mW/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt ‚ -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient „ ––– 230 °C/W

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– -0.029 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.60 VGS = -10V, ID = -0.60A ƒ
RDS(ON) Static Drain-to-Source On-Resistance Ω
––– ––– 1.0 VGS = -4.5V, I D = -0.30A ƒ
VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, I D = -250µA
g fs Forward Transconductance 0.44 ––– ––– S VDS = -10V, ID = -0.30A
––– ––– -1.0 VDS = -24V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
I GSS nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Qg Total Gate Charge ––– 3.4 5.1 ID = -0.60A
Qgs Gate-to-Source Charge ––– 0.52 0.78 nC VDS = -24V
Qgd Gate-to-Drain ("Miller") Charge ––– 1.1 1.7 VGS = -10V, See Fig. 6 and 9 ƒ
t d(on) Turn-On Delay Time ––– 10 ––– VDD = -15V
tr Rise Time ––– 8.2 ––– ID = -0.60A
ns
t d(off) Turn-Off Delay Time ––– 23 ––– RG = 6.2Ω
tf Fall Time ––– 16 ––– RD = 25Ω, See Fig. 10 ƒ
Ciss Input Capacitance ––– 75 ––– VGS = 0V
Coss Output Capacitance ––– 37 ––– pF VDS = -25V
C rss Reverse Transfer Capacitance ––– 18 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -0.54

(Body Diode) showing the
A
I SM Pulsed Source Current integral reverse G
––– ––– -4.8
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -0.60A, VGS = 0V ƒ
t rr Reverse Recovery Time ––– 26 39 ns TJ = 25°C, IF = -0.60A
Q rr Reverse RecoveryCharge ––– 20 30 nC di/dt = 100A/µs ƒ

Notes:
 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )

‚ ISD ≤ -0.60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, „ Surface mounted on FR-4 board, t ≤ 5sec.
TJ ≤ 150°C

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10 10
VGS VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 7.0V - 7.0V
- 5.5V - 5.5V
-I D , Drain-to-Source Current (A)

-I D , Drain-to-Source Current (A)

- 4.5V - 4.5V
- 4.0V - 4.0V
- 3.5V - 3.5V
BOTTOM - 3.0V BOTTOM - 3.0V

1 1

-3.0V
-3.0V

20μs PULSE WIDTH 20μs PULSE WIDTH

TJ = 25°C A TJ = 150°C
0.1 0.1 A
0.1 1 10 0.1 1 10
-VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

10 2.0
I D = -0.60A
R DS(on) , Drain-to-Source On Resistance
-ID , Drain-to-Source Current (A)

TJ = 25°C 1.5

TJ = 150°C
(Normalized)

1 1.0

0.5

VDS = -10V
20μs PULSE WIDTH VGS = -10V
0.1 0.0
A A
3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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140 20
V GS = 0V, f = 1MHz I D = -0.60A
C iss = Cgs + C gd , Cds SHORTED
VDS = -24V
C rss = C gd

-VGS , Gate-to-Source Voltage (V)

120
Ciss C oss = C ds + C gd VDS = -15V
16

100
C, Capacitance (pF)

Coss

12
80

60
8
Crss
40

4
20
FOR TEST CIRCUIT
SEE FIGURE 9
0 A 0 A
1 10 100 0.0 1.0 2.0 3.0 4.0 5.0
-VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

10 10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-ISD , Reverse Drain Current (A)

-I D , Drain Current (A)

TJ = 150°C 100μs

1 1
TJ = 25°C

1ms

TA = 25°C
10ms
TJ = 150°C
VGS = 0V Single Pulse
0.1 A 0.1 A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100
-VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRLML5103PbF

RD
VDS
QG

-10V V GS
D.U.T.
QGS QGD RG -
+ VDD
VG
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge

Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit

Current Regulator
Same Type as D.U.T.

50KΩ
VDS
12V .2μF 90%
.3μF
-

D.U.T. +VDS

VGS
10%
-3mA VGS
td(on) tr t d(off) tf
IG ID
Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms
1000
Thermal Response (Z thJA )

D = 0.50
100
0.20
0.10
0.05
10
0.02
0.01 PDM

t1
SINGLE PULSE
1 (THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-

 **
RG • dv/dt controlled by RG +
• I SD controlled by Duty Factor "D"
*
VDD
-
• D.U.T. - Device Under Test
VGS*

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ISD]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 13. For P-Channel HEXFETS

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 IRLML5103PbF
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
S
Y DIME NSIONS
M
6 B MILLIME T ERS INCHES
O
D 5 L MIN MAX MIN MAX
A 0.89 1.12 .036 .044
A1 0.01 0.10 .0004 .0039
A2 0.88 1.02 .035 .040
3 6 b 0.30 0.50 .0119 .0196
E
E1 c 0.08 0.20 .0032 .0078
ccc C B A D 2.80 3.04 .111 .119
1 2
E 2.10 2.64 .083 .103
E1 1.20 1.40 .048 .055
e 0.95 BSC .0375 BSC
B 5 e1 1.90 BSC .075 BSC
e
L 0.40 0.60 .0158 .0236
e1
L1 0.25 BS C .0118 BSC
0 0° 8° 0° 8°
aaa 0.10 .004
bbb 0.20 .008
ccc 0.15 .006

4 H

A A2
L1

A1 3X b aaa C
bbb C A B 3 S URF
0
7 3X L

RECOMMENDED FOOT PRINT

NOT ES
0.972 1. DIMENS IONING AND TOLERANCING PER AS ME Y14.5M-1994.
3X [.038] 2. DIMENS IONS ARE S HOWN IN MILLIMETERS AND INCHES.
3. CONTROLLING DIMENSION: MILLIMET ER.
2.742 4 DAT UM PLANE H IS LOCAT ED AT T HE MOLD PART ING LINE.
[.1079]
5 DAT UM A AND B T O BE DET ERMINED AT DAT UM PLANE H.
6 DIMENSIONS D AND E1 ARE MEAS URED AT DAT UM PLANE H.
7 DIMENSION L IS T HE LEAD LENGTH FOR S OLDERING T O A SUBS T RAT E.
8. OUT LINE CONFORMS T O JEDEC OUT LINE T O-236AB .
0.802
0.95 3X
[.031]
[.0375]
1.90
[.075]

Micro3 (SOT-23 / TO-236AB) Part Marking Information

Notes: This part marking information applies to devices produced after 02/26/2001

DATE CODE W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

PART NUMBER LEAD-FREE WORK
YEAR Y WEEK W
2011 2001 1 01 A
2012 2002 2 02 B
2013 2003 3 03 C
2014 2004 4 04 D
Cu WIRE ASSEMBLY LOT CODE 2015 2005 5
HALOGEN FREE
2016 2006 6
X = PART NUMBER CODE REFERENCE : 2017 2007 7
2018 2008 8
A = IRLML2402 S = IRLML6244
2019 2009 9
B = IRLML2803 T = IRLML6246 2020 2010 0 24 X
C = IRLML6302 U = IRLML6344 25 Y
D = IRLML5103 V = IRLML6346 26 Z
E = IRLML6402 W = IRFML8244
F = IRLML6401 X = IRLML2244 W = (27-52) IF PRECEDED BY A LETTER
G = IRLML2502 Y = IRLML2246 WORK
YEAR Y WEEK W
H = IRLML5203 Z = IRFML9244
I = IRLML0030 2011 2001 A 27 A
J = IRLML2030 2012 2002 B 28 B
K = IRLML0100 2013 2003 C 29 C
2014 2004 D 30 D
L = IRLML0060
2015 2005 E
M = IRLML0040 2016 2006 F
N = IRLML2060 DATE CODE EXAMPLE: 2017 2007 G
P = IRLML9301 YWW = 432 = DF 2018 2008 H
R = IRLML9303 YWW = 503 = 5C 2019 2009 J
2020 2010 K 50 X
51 Y
52 Z

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

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 IRLML5103PbF

Micro3™ Tape & Reel Information

Dimensions are shown in millimeters (inches)

2.05 ( .080 ) 1.6 ( .062 ) 1.32 ( .051 )

1.95 ( .077 ) 1.5 ( .060 )
1.85 ( .072 ) 1.12 ( .045 )
4.1 ( .161 )
3.9 ( .154 ) 1.65 ( .065 )

TR 3.55 ( .139 ) 8.3 ( .326 )

3.45 ( .136 )
7.9 ( .312 )

FEED DIRECTION 4.1 ( .161 )

3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )
0.9 ( .036 ) 0.25 ( .010 )

178.00
( 7.008 )
MAX.

9.90 ( .390 )
8.40 ( .331 )

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

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†
Qualification information
Consumer
Qualification level ††
(per JEDE C JE S D47F guidelines)

MS L1
Moisture Sensitivity Level Micro3™ (SOT-23) ††
(per JEDE C J-S T D-020D )
RoHS compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability

†† Applicable version of JEDEC standard at the time of product release

Revision History
Date Comment
• Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 7.
4/24/2014
• Added Qualification table -Qual level "Consumer" on page 9.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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