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1.

Mention any four differences between low frequency and high frequency microwave
circuits.
Low frequency circuits High frequency circuits
Circuit elements are lumped Circuit elements are distributed
Analysis based on Kirchoff’s and ohm’s law Analysis based on EMF theory
Power handling capacity is less Power handling capacity is high
Losses increases with frequency Losses depends on frequency and other
factors

2. Write the properties of S parameters.


Zero diagonal Property
Symmetry property
Unitary property
Phase shift property
3. Give the relationship between [S] and [Z].

4. Mention the limitations in measuring Z, Y ABCD parameters at Microwave


frequencies.
S matrix is used in MW analysis to overcome the problems which occurs when
H,Y,&Z parameters are used in high frequencies.
1. Equipment is not readily available to measure total voltage &total current at the
ports of the network.
2. Short and open circuits are difficult to achieve over a broad band of frequencies.
3. Active devices, such as power transistor &tunnel diodes, frequently won’t have
stability for a short or open circuit.

5. Draw the high frequency equivalent circuit of the resistor and Inductor.
1. Distinguish between conditional and unconditional stabilities of an amplifier.
Conditional stabilities unconditional stabilities
Conditional stabilities refers to a network Unconditional stabilities refers to a network
that is stable when its input and output see that can see any possible impedance on the
the intended characteristic impedance Zo smith chart from the center to the perimeter
at any phase angle. Gamma<1 means that the
real part of the impedance is positive
If there is a mismatch, there is a region of Note that any network can oscillate if it sees
either source or load impedances that will a real impedance that is negative, so if your
definitely cause it to oscillate. The term system goes outside the normal smith chart
potentially unstable refers to the same all bets on stability are off
condition

2. Define power gain of amplifier in terms of S parameters and reflection coefficients.

3. Why impedance matching is required. What are other considerations required?


1. Minimum power loss in the feed line.
2. Maximum power transfer
3. Improving the S/N ratio of the system for sensitive receiver components
Other considerations:
1. Complexity 2. Band width requirement 3. Adjustability
4. Implementation

4. Draw typical output stability circle and input stability circle.

5. Define transducer power gain.


Transducer power gain is nothing but the gain of the amplifier when placed
between the source and load.
𝑃𝑜𝑤𝑒𝑟 𝑑𝑒𝑙𝑖𝑣𝑒𝑟𝑒𝑑 𝑡𝑜 𝑡ℎ𝑒 𝑙𝑜𝑎𝑑
GT = 𝐴𝑣𝑎𝑖𝑙𝑎𝑏𝑙𝑒 𝑝𝑜𝑤𝑒𝑟 𝑓𝑟𝑜𝑚 𝑡ℎ𝑒 𝑠𝑜𝑢𝑟𝑐𝑒
𝑃
= 𝑃𝐿
𝐴

6. Give the expression that relates nodal quality factor (Qn) with loaded quality factor
(QL).
QL = Qn / 2
1. Compare PIN diode and PN junction diode.

Sl.No. PIN Diode PN Diode


1 Thin layer of intrinsic Intrinsic layer is absent. Only PN
semiconductor material is present junction is available
in between P and N regions
2 Intrinsic region reduces the No intrinsic region. Hence it
junction capacitances increases the junction capacitance
3 Forward conductivity is a linear Forward conductivity is a nonlinear
function of the diode bias current function of the diode bias current

2. What is isolator? And why isolators are called uniline?


An isolator or uniline is a two port non reciprocal device which produces a
minimum attenuation to wave in one direction and very high attenuation in the opposite
direction.

3. Power at the port is 900 mw. If this power is incident on 20 dB coupler with directivity
40 dB, calculate the coupled power and transmitted power.

Given: P1 = 900 mW; C = 20 dB; D = 40 dB


Coupling factor C = 10 log10 (P1 / P4)
20 = 10 log (900 / P4)
P4 = 9 mW
Output power = Input power – Auxiliary power
= 900 – 9
= 891 mW

4. Mention the ideal characteristics of dielectric material used in MMIC.


i. Good reproductivity
ii. Capability of handling high voltages
iii. Ability to undergo processes without developing pin holes
iv. Low RF dielectric loss

5. What is negative resistance in Gunn diode?


The carrier drift velocity is linearly increased from zero to a minimum when the
electric field is varied from zero to a threshold value. When the electric field is beyond
the threshold value of 3000 V/cm, the drift velocity is decreased and the diode exhibits
negative resistance.
1. How will you define magnetron?
M – type devices or cross field tubes in which the dc magnetic field and dc
electric filed are perpendicular to each other. The principal tube in this type is called
magnetron.

2. Write short notes on Tetrodes and Pentodes?


The triodes, tetrodes and pentodes are known as conventional tubes which are
useful at low microwave frequencies. The vaccum tube was the first active electronic
device, which is capable of actually controlling and amplifying a small signal.

3. What is transferred electron effect?


Some materials like gallium arsenide exhibit s negative differential mobility
when biased above threshold value of the electric field. The electrons in the lower
energy band will be transferred into the higher energy band. The behavior is called
transferred electron effect or Gunn effect.

4. A helix travelling wave tube operates at 4 GHz, under a beam voltage of 10 kV and
beam current of 500mA. If the helix is 25 Ώ and interaction length is 20cm, find the
gain parameter.
1
𝐼𝑜 𝑍0 3
Gain parameter C = 𝐶 = ( 4𝑉 ) = 0.068
𝑜

5. State the limitations of conventional tubes at microwave frequency.


i. Lead inductance and inter electrode capacitance effects
ii. Transit angle effects
iii. Gain bandwidth limitations
1. What are the possible errors in VSWR measurement?
1. Vmax and Vmin may not be measured in the square law region of the crystal detector.
2. The probe thickness and depth of the penetration may produce reflections in the line and also
distortion in the field to be measured.

2. What are tunable detector?


The tunable detectors are used to demodulate the signal and couple the required
output to high frequency scope analyzer. The low frequency demodulated output is
detected using non reciprocal detector diode mounted in the microwave transmission
line.

3. What is slotted section with line carriage?


It is a microwave sectioned coaxial line connecting a coaxial E-field probe
which penetrates inside a rectangular waveguide slotted section. The longitudinal slot
is cut along the center of the waveguide broad walls. The probe is made to move along
the slotted wall which samples the electric field proportional to probe voltage.

4. What is the main purpose of slotted section with line carriage?


1. For determination of location of voltage standing wave maxima and
minima along the line.
2.Measure the VSWR and standing wave pattern.
3.Wavelength.
4.Impedence.
5.Reflection coeffient.
6.Return loss measurement.

5. What is a VSWR meter?


VSWR meter is a highly sensitive, high gain, low noise voltage amplifier tuned
normally at fixed frequency of 1KHZ of which microwave signals modulated. This
meter indicates calibrated VSWR reading fir any loads.

6. Mention the disadvantages of single bridge circuit?


1.Change in resistance due to mismatch at the microwave input port results in
incorrect reading
2.The thermistor is sensitive to change in the ambient temp resulting in false
readings

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