SEMICONDUCTOR FTD2058F

TECHNICAL DATA

A C

FTD2058F

F
TRANSISTOR (NPN)

O
E DIM MILLIMETERS

B
A _ 0 20
10 16 +
FEATURES B _ 0 20
15 00 +

G
C _ 0 20
3 00 +
Low VCE(sat): VCE(sat)=-1.0V(Max.)(IC/IB=-2A/-0.2A) D 0 625±0 125
E 3 50 typ
Complementary to FTB1366F

K
F 2 7 typ
G 16 80 +_04
L M
R H 0 45 +_0 1

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

J
J 13 20 +_ 0 20
K 3 80 +_02
D
L 1 52 MAX
Symbol Parameter Value Unit
M 1 52 MAX
N N H
VCBO Collector-Base Voltage 60 V N 2 54 +_02
O 6 36 +_03
VCEO Collector-Emitter Voltage 60 V Q _02
4 50 +
R _ 0 20
2 70 +
1 2 3

Q
VEBO Emitter-Base Voltage 7 V
1. Base
IC Collector Current -Continuous 3 A
2. Collector
PC Collector power dissipation 2 W 3. Emitter

TJ Junction temperature 150 ℃

Tstg Storage Temperature -55-150 ℃ TO-220F

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 60 V

Collector-emitter breakdown voltage V(BR)CEO Ic=50mA, IB=0 60 V

Emitter-base breakdown voltage V(BR)EBO IE=100 µA, IC=0 7 V

Collector cut-off current ICBO VCB=60V, IE=0 100 µA

Emitter cut-off current IEBO VEB=7V, IC=0 100 µA

DC current gain hFE(1) VCE=5V, IC=0.5A 60 200

Collector-emitter saturation voltage VCE(sat) IC=2A, IB=0.2A 1 V

Base-emitter voltage VBE(on) VCE=5V, IC=0.5A 1 V

Transition frequency fT VCE=5V, IC=0.5A 3 MHz

Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 35 pF

Turn-on Time ton 0.65

Switching
Storage Time tstg 1.3 us
time
Fall Time tf 0.65

CLASSIFICATION of hFE(1)
Rank O Y

Range 60-120 100-200

2012. 02. 27 Revision No : 0 1/2

 FTD2058F

IC - VCE Pc - Ta

COLLECTOR POWER DISSIPATION PC (W)

3.0 40
COLLECTOR CURRENT I C (A)

90 60 1 Tc=Ta
80 50 INFINITE HEAT SINK
2.5 70 35 2 300x300x2mm Al
40
HEAT SINK
2.0 30 30 3 200x200x2mm Al
HEAT SINK
20 1
25 4 100x100x1mm Al
1.5 HEAT SINK
I B =10mA 5 100x100x1mm Fe
20 2
1.0 HEAT SINK
3
6 50x50x1mm Al
15 HEAT SINK
0.5 COMMON EMITTER 4
Tc=25℃ 7 50x50x1mm Fe
10 5
0 HEAT SINK
0 6
8 NO HEAT
0 1 2 3 4 5 6 7 8 5 7
SINK
8
COLLECTOR-EMITTER VOLTAGE VCE (V) 0
0 25 50 75 100 125 150 175 200

AMBIENT TEMPERATURE Ta (℃)

h FE - IC SAFE OPERATING AREA

300 10
I C MAX(PULSED) *
Tc=100℃
DC CURRENT GAIN hFE

COLLECTOR CURRENT I C (A)

5
℃
Tc=25

1m
10 0mS
I C MAX(CONTINUOUS)
5℃

10

S
Tc=-2 3

mS
100
DC *
*
O *
50 Tc PE
=2 RA
5℃ TIO 1s
30 1 N *

0.5 * SINGLE NONREPETITIVE

COMMON EMITTER

VCEO MAX.
PULSE Tc=25℃
V CE =5V 0.3
CURVES MUST BE DERATED
10
0.02 0.05 0.1 0.3 1 3 10 LINEARLY WITH INCREASE IN
TEMPERATURE
COLLECTOR CURRENT IC (A)
0.1
1 3 5 10 30 5 0 100

COLLECTOR-EMITTER VOLTAGE VCE (V)

V CE(sat) - I C
1
COLLECTOR-EMITTER SATURATION

COMMON EMITTER
I C /IB =10
VOLTAGE V CE(sat) (V)

0.5

0.3

0C
0.1 =10
Tc

0.05 Tc=25℃
Tc=-25℃
0.03
0.02 0.05 0.1 0.3 1 3 5 10

COLLECTOR CURRENT IC (A)

2012.02. 27 Revision No : 0 2/2