DATA SHEET

MOS FIELD EFFECT TRANSISTOR

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2SK2414, 2SK2414-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION
The 2SK2414 is N-Channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS
for high voltage switching applications. (in millimeter)
2.3 ±0.2

+0.2
1.5 –0.1
6.5 ±0.2
FEATURES 5.0 ±0.2 0.5 ±0.1
4
• Low On-Resistance

1.6 ±0.2

7.0 MIN. 5.5 ±0.2

RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A) 1 2 3

13.7 MIN.
RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
• Low Ciss Ciss = 840 pF TYP. 1.3 MAX.

• Built-in G-S Gate Protection Diodes

• High Avalanche Capability Ratings 0.6 ±0.1 0.6 ±0.1
2.3 2.3
1. Gate

0.75
QUALITY GRADE 2. Drain
Standard 3. Source
4. Fin (Drain)
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
MP-3
number IEI-1209) published by NEC Corporation to know the

+0.2
1.5 –0.1
6.5 ±0.2 2.3 ±0.2
specification of quality grade on the devices and its recommended applica-
5.0 ±0.2
tions. 0.5 ±0.1

1.5 TYP.
1.0 MIN.
4
0.8 4.3 MAX.

10.0 MAX.
5.5 ±0.2

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 1 2 3

0.5
12.0
MIN.

Drain to Source Voltage VDSS 60 V

1.3 MAX. 0.9 0.8
Gate to Source Voltage VGSS ±20 V 2.3 2.3 MAX. MAX.
Drain Current (DC) ID(DC) ±10 A 0.8
1. Gate
Drain Current (pulse)* ID(pulse) ±40 A 2. Drain
3. Source
Total Power Dissipation (Tc = 25 ˚C) PT1 20 W
4. Fin (Drain)
Total Power Dissipation (TA = 25 ˚C) PT2 1.0 W
MP-3Z (SURFACE MOUNT TYPE)
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C Drain
Single Avalanche Current** IAS 10 A
Single Avalanche Energy** EAS 10 mJ
Body
Gate Diode
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Gate Protection
Diode Source

The information in this document is subject to change without notice.

Document No. D13193EJ2V0DS00 (2nd edition)

(Previous No. TC-2495)
Date Published March 1998 N CP(K)
Printed in Japan © 1994
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ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Drain to Source On-Resistance RDS(on)1 52 70 mΩ VGS = 10 V, ID = 5.0 A

Drain to Source On-Resistance RDS(on)2 68 95 mΩ VGS = 4 V, ID = 5.0 A

Gate to Source Cutoff Voltage VGS(off) 1.0 1.6 2.0 V VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 7.0 12 S VDS = 10 V, ID = 5.0 A

Drain Leakage Current IDSS 10 µA VDS = 60 V, VGS = 0

Gate to Source Leakage Current IGSS ±10 µA VGS = ±20 V, VDS = 0
Input Capacitance Ciss 860 pF VDS = 10 V

Output Capacitance Coss 440 pF VGS = 0

Reverse Transfer Capacitance Crss 110 pF f = 1 MHz
Turn-On Delay Time td(on) 15 ns ID = 5.0 A

Rise Time tr 90 ns VGS(on) = 10 V

Turn-Off Delay Time td(off) 75 ns VDD = 30 V
Fall Time tf 35 ns RG = 10 Ω

Total Gate Charge QG 24 nC ID = 10 A

Gate to Source Charge QGS 2.6 nC VDD = 48 V
Gate to Drain Charge QGD 6.0 nC VGS = 10 V

Body Diode Forward Voltage VF(S-D) 1.0 V IF = 10 A, VGS = 0

Reverse Recovery Time trr 85 ns IF = 10 A, VGS = 0
Reverse Recovery Charge Qrr 220 nC di/dt = 50 A/µs

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

D.U.T. D.U.T.
L RL VGS VGS
RG = 25 Ω 90 %
VGS (on)
Wave 010 %
PG PG. RG
50 Ω Form
VDD RG = 10 Ω VDD
VGS = 20 V → 0 ID 90 %
90 %
ID
BVDSS VGS ID 10 % 10 %
IAS 0
0 Wave
VDS
ID Form td (on) tr td (off) tf
t
VDD
ton toff
t = 1 µs
Duty Cycle ≤ 1 %
Starting Tch

Test Circuit 3 Gate Charge

D.U.T.
IG = 2 mA RL

PG.
50Ω
VDD

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

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TYPICAL CHARACTERISTICS (TA = 25 °C)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
100 24
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

80 20

16
60
12
40
8

20
4

0
0 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160
Tc - Case Temperature - °C Tc - Case Temperature - °C

DRAIN CURRENT vs.

FORWARD BIAS SAFE OPERATING AREA DRAIN TO SOURCE VOLTAGE
100 50
Pulsed
PW
=

ID (pulse) VGS = 10 V
10

40
ID - Drain Current - A
ID - Drain Current - A

µs
10
10 ed

VGS = 6 V
0
V)

µs
= imit

30
L
t V (on)

ID (DC) VGS = 4 V
S

Po

10
G
S
RD

we
(a

20
rD

1
iss

m ms
10
s
ipa
tio

10

10
n

0
Lim

Tc = 25 °C
DC
s
ite

Single Pulse
1
d

0.1 1 10 100 0 2 4 6 8 10

VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

1000
Pulsed
VDS = 10 V
ID - Drain Current - A

100

10 TA = –25 °C
25 °C
125 °C

1
0 1 2 3 4 5 6 7 8

VGS - Gate to Source Voltage - V

3
 2SK2414, 2SK2414-Z
w w w . D a t a S h e e t 4 U .

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

rth(t) - Transient Thermal Resistance - °C/W

Rth (ch-a) = 125 °C/W
100

10
Rth (ch-c) = 6.25 °C/W

0.1

0.01 Single Pulse

10 µ 100 µ 1m 10 m 100 m 1 10 100 1000

PW - Pulse Width - s

FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

RDS (on) - Drain to Source On-State Resistance - mΩ
DRAIN CURRENT GATE TO SOURCE VOLTAGE
100 120
VDS = 10 V
|yfs| - Forward Transfer Admittance - S

Pulsed
Pulsed ID = 5 A
100
TA = –25 °C
25 °C 80
75 °C
125 °C
10 60
ID = 5 A

40

20

1
1 10 100 0 5 10 15 20

ID - Drain Current - A VGS - Gate to Source Voltage - V

RDS (on) - Drain to Source On-State Resistance - mΩ

DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE vs.

RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE
VGS (off) - Gate to Source Cutoff Voltage - V

120 2.0
Pulsed VDS = 10 V
ID = 1 mA
100
1.5
80
VGS = 4 V

60 VGS = 10 V 1.0

40
0.5
20

0 0
1 10 100 –50 –25 0 25 50 75 100 125 150

ID - Drain Current - A Tch - Channel Temperature - °C

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DRAIN TO SOURCE ON-STATE RESISTANCE vs. SOURCE TO DRAIN DIODE

RDS (on) - Drain to Source On-State Resistance - mΩ

CHANNEL TEMPERATURE FORWARD VOLTAGE
120 100

ISD - Diode Forward Current - A

100
VGS = 10 V
VGS = 4 V
80 10

60
VGS = 10 V VGS = 0

40 1

20
ID = 5 A
0 0.1 Pulsed
–50 –25 0 25 50 75 100 125 150 0 1.0 2.0

Tch - Channel Temperature - °C VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE SWITCHING CHARACTERISTICS
10000 1000
VGS = 0
f = 1 MHz
td (on), tr, td (off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF

Ciss tr
1000 100 td (off)
Coss
tf
Crss td (on)
100 10

VDD = 30 V
VGS = 10 V
10 1.0 RG = 10 Ω
1 10 100 0.1 1.0 10 100

VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs.

DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100 80 ID = 10 A 16
VDD = 48 V 14
VDS - Drain to Source Voltage - V

VGS - Gate to Source Voltage - V

trr - Reverse Recovery time - ns

60 12
50
10
VDS
40 VGS 8

20 4

di/dt = 50 A/ µ s 2
10 VGS = 0 0
0.1 1.0 10 100 0 10 20 30 40

ID - Drain Current - A Qg - Gate Charge - nC

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 2SK2414, 2SK2414-Z
w w w . D a t a S h e e t

SINGLE AVALANCHE ENERGY vs. SINGLE AVALANCHE ENERGY

INDUCTIVE LOAD DERATING FACTOR
100 100
VDD = 30 V
IAS - Single Avalanche Energy - mJ

RG = 25 Ω

dt - Energy Derating Factor - %

80 VGS = 20 V → 0
IAS ≤ 10 A
IAS = 10 A
10
EAS 60
=1
0m
J
40
1.0

VDD = 30 V 20
VGS = 20 V → 0
RG = 25 W 0
10 µ 100 µ 1m 10 m 25 50 75 100 125 150

L - Inductive Load - H Starting Tch - Starting Channel Temperature - °C

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REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. C11745E

Quality grade on NEC semiconductor devices. C11531E

Semiconductor device mounting technology manual. C10535E
IC package manual. C10943X

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. X10679E
Power MOS FET features and application switching power supply. D12971E

Application circuits using Power MOS FET. D12972E

Safe operating area of Power MOS FET. D13085E

The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.

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[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.

M4 96.5