BSM 15 GD 120 DN2

IGBT Power Module

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type VCE IC Package Ordering Code
BSM 15 GD 120 DN2 1200V 25A ECONOPACK 2 C67076-A2504-A67
BSM 15 GD120DN2E3224 1200V 25A ECONOPACK 2K C67070-A2504-A67

Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Collector-gate voltage VCGR
RGE = 20 kΩ 1200
Gate-emitter voltage VGE ± 20
DC collector current IC A
TC = 25 °C 25
TC = 80 °C 15
Pulsed collector current, tp = 1 ms ICpuls
TC = 25 °C 50
TC = 80 °C 30
Power dissipation per IGBT Ptot W
TC = 25 °C 145
Chip temperature Tj + 150 °C
Storage temperature Tstg -40 ... + 125

Thermal resistance, chip case RthJC ≤ 0.86 K/W

Diode thermal resistance, chip case RthJCD ≤ 1.5
Insulation test voltage, t = 1min. Vis 2500 Vac
Creepage distance - 16 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56

1 Oct-20-1997
BSM 15 GD 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Static Characteristics
Gate threshold voltage VGE(th) V
VGE = VCE, IC = 0.6 mA 4.5 5.5 6.5
Collector-emitter saturation voltage VCE(sat)
VGE = 15 V, IC = 15 A, Tj = 25 °C - 2.5 3
VGE = 15 V, IC = 15 A, Tj = 125 °C - 3.1 3.7
Zero gate voltage collector current ICES mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 0.3 0.5
VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 1.2 -
Gate-emitter leakage current IGES nA
VGE = 20 V, VCE = 0 V - - 150

AC Characteristics
Transconductance gfs S
VCE = 20 V, IC = 15 A 5.5 - -
Input capacitance Ciss pF
VCE = 25 V, VGE = 0 V, f = 1 MHz - 1000 -
Output capacitance Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 150 -
Reverse transfer capacitance Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 70 -

2 Oct-20-1997
BSM 15 GD 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time td(on) ns
VCC = 600 V, VGE = 15 V, IC = 15 A
RGon = 82 Ω - 55 110
Rise time tr
VCC = 600 V, VGE = 15 V, IC = 15 A
RGon = 82 Ω - 45 90
Turn-off delay time td(off)
VCC = 600 V, VGE = -15 V, IC = 15 A
RGoff = 82 Ω - 400 600
Fall time tf
VCC = 600 V, VGE = -15 V, IC = 15 A
RGoff = 82 Ω - 70 100

Free-Wheel Diode
Diode forward voltage VF V
IF = 15 A, VGE = 0 V, Tj = 25 °C - 2.4 2.9
IF = 15 A, VGE = 0 V, Tj = 125 °C - 1.9 -
Reverse recovery time trr µs
IF = 15 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs, Tj = 125 °C - 0.1 -
Reverse recovery charge Qrr µC
IF = 15 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C - 1 -
Tj = 125 °C - 3 -

3 Oct-20-1997
BSM 15 GD 120 DN2

Power dissipation Safe operating area

Ptot = ƒ(TC) IC = ƒ(VCE)
parameter: Tj ≤ 150 °C parameter: D = 0, TC = 25°C , Tj ≤ 150 °C

10 2
150
t = 11.0µs
W p

130 A
Ptot 120 IC
110
10 1
100
100 µs
90
80
70
60
10 0 1 ms
50
40
30
10 ms
20
10
0 10 -1 DC
0 1 2 3
0 20 40 60 80 100 120 °C 160 10 10 10 10 V
TC VCE

Collector current Transient thermal impedance IGBT

IC = ƒ(TC) Zth JC = ƒ(tp)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C parameter: D = tp / T

26 10 0

22 K/W
IC ZthJC
20

18 10 -1
16

14

12 D = 0.50
0.20
10
10 -2 0.10
8
0.05
6 0.02
single pulse
4 0.01

2
0 10 -3
-5 -4 -3 -2 -1 0
0 20 40 60 80 100 120 °C 160 10 10 10 10 10 s 10
TC tp

4 Oct-20-1997
BSM 15 GD 120 DN2

Typ. output characteristics Typ. output characteristics

IC = f (VCE) IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C

30 30
A A
26 17V 26 17V
15V 15V
IC 24 13V IC 24 13V
11V 11V
22 22
9V 9V
20 7V 20 7V

18 18
16 16
14 14
12 12
10 10
8 8
6 6
4 4
2 2
0 0
0 1 2 3 V 5 0 1 2 3 V 5
VCE VCE

Typ. transfer characteristics

IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V

30
A
26
IC 24
22
20
18
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 V 14
VGE

5 Oct-20-1997
 BSM 15 GD 120 DN2

Typ. gate charge Typ. capacitances

VGE = ƒ(QGate) C = f (VCE)
parameter: IC puls = 15 A parameter: VGE = 0 V, f = 1 MHz

20 10 1

V
nF
VGE 16 C

14 600 V 800 V
10 0 Ciss

12

10

8 Coss
10 -1
6
Crss

0 10 -2
0 10 20 30 40 50 60 70 80 nC 100 0 5 10 15 20 25 30 V 40
QGate VCE

Reverse biased safe operating area Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150°C ICsc = f(VCE) , Tj = 150°C
parameter: VGE = 15 V parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH

2.5 12

ICpuls/IC ICsc/IC

8
1.5

1.0

0.5
2

0.0 0
0 200 400 600 800 1000 1200 V 1600 0 200 400 600 800 1000 1200 V 1600
VCE VCE

6 Oct-20-1997
BSM 15 GD 120 DN2

Typ. switching time Typ. switching time

I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A

10 3 10 3 tdoff

t tdoff t
ns ns

tdon
tr
10 2 10 2
tr

tdon
tf tf

10 1 10 1
0 5 10 15 20 25 30 A 40 0 50 100 150 200 Ω 300
IC RG

Typ. switching losses Typ. switching losses

E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω par.: VCE = 600V, VGE = ± 15 V, IC = 15 A

10 10

mWs mWs

E 8 E 8

7 7
Eon

6 6

5 5

Eon
4 4

3 3
Eoff
Eoff
2 2

1 1

0 0
0 5 10 15 20 25 30 A 40 0 50 100 150 200 Ω 300
IC RG

7 Oct-20-1997
BSM 15 GD 120 DN2

Forward characteristics of fast recovery Transient thermal impedance Diode

reverse diode IF = f(VF) Zth JC = ƒ(tp)
parameter: Tj parameter: D = tp / T

10 1
30
A K/W
26
10 0
IF 24 ZthJC
22
20
10 -1
18
Tj=125°C Tj=25°C
16
14 D = 0.50
10 -2 0.20
12
0.10
10
0.05
8 single pulse
10 -3 0.02
6
0.01
4
2
0 10 -4
-5 -4 -3 -2 -1 0
0.0 0.5 1.0 1.5 2.0 V 3.0 10 10 10 10 10 s 10
VF tp

8 Oct-20-1997
BSM 15 GD 120 DN2

Circuit Diagram

Package Outlines
Dimensions in mm
Weight: 180 g

9 Oct-20-1997