PD - 91434A

IRF5210
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance D
VDSS = -100V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 0.06Ω
l Fast Switching G
l P-Channel
l Fully Avalanche Rated ID = -40A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -40
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -29 A
IDM Pulsed Drain Current  -140
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 780 mJ
IAR Avalanche Current -21 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt ƒ -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62

5/13/98
IRF5210
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -24A „
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 10 ––– ––– S VDS = -50V, ID = -21A
––– ––– -25 VDS = -100V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 180 ID = -21A
Qgs Gate-to-Source Charge ––– ––– 25 nC VDS = -80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 97 VGS = -10V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 17 ––– VDD = -50V
tr Rise Time ––– 86 ––– ID = -21A
ns
td(off) Turn-Off Delay Time ––– 79 ––– RG = 2.5Ω
tf Fall Time ––– 81 ––– RD = 2.4Ω, See Fig. 10 „
D
Between lead,
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 2700 ––– VGS = 0V

Coss Output Capacitance ––– 790 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 450 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -40

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -140
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, I S = -21A, V GS = 0V „

trr Reverse Recovery Time ––– 170 260 ns TJ = 25°C, IF = -21A
Qrr Reverse RecoveryCharge ––– 1.2 1.8 µC di/dt = -100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = -25V, starting TJ = 25°C, L = 3.5mH
RG = 25Ω, IAS = -21A. (See Figure 12)
ƒ ISD ≤ -21A, di/dt ≤ -480A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
 IRF5210
1000 1000 VGS
VGS
TO P - 15V TOP - 15V
- 10V - 10V
- 8.0V - 8.0V
- 7.0V

-ID , D rain-to-S ource C urrent (A )

- 7.0V
-ID , D rain-to-S ou rc e C urre nt (A )

- 6.0V - 6.0V
- 5.5V - 5.5V
- 5.0V - 5.0V
BOT TOM - 4.5V BOTTOM - 4.5V
100 100

10 10

-4 .5V
-4.5 V
4 0µ s P U LS E W ID TH 4 0µ s P U LS E W ID T H
T c = 2 5°C A T C = 1 75 °C
1 1 A
0.1 1 10 100 0.1 1 10 100
-VD S , D rain-to-S ourc e V oltage (V ) -VD S , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
I D = -35 A
R D S (on ) , D rain-to-S ource O n R esistance
-I D , D rain-to-S ource C urrent (A)

2.5

100 2.0
T J = 2 5 °C
(N orm alized)

T J = 1 7 5 °C
1.5

10 1.0

0.5

V D S = -5 0 V
4 0 µ s P U L S E W ID T H VG S = -1 0V
1 0.0
A A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
-VG S , G a te -to -S o u rc e V o lta g e (V ) T J , Junction T em perature (°C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRF5210
6000 20
V GS = 0V , f = 1MHz I D = -2 1A
C iss = C g s + C g d , C d s S H O R TE D V D S = -80 V

-V G S , G ate-to-S ource V oltage (V )

C rs s = C gd V D S = -50 V
5000
C o ss = C ds + C g d 16
C iss V D S = -20 V
C , Capacitance (pF)

4000
12
C oss
3000

C rss 8
2000

4
1000

FO R TE S T CIR C U IT
S E E FIG U R E 1 3
0 A 0 A
1 10 100 0 40 80 120 160 200
-VD S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
-IS D , R everse Drain C urrent (A )

-I D , D rain C urrent (A )

10µ s
100 100

TJ = 1 75 °C
100µs
T J = 2 5°C

10 10 1m s

10m s
T C = 25 °C
T J = 17 5°C
V G S = 0V S ing le P u lse
1 A 1 A
0.4 0.8 1.2 1.6 2.0 2.4 1 10 100 1000
-VS D , S ourc e-to-D rain V oltage (V ) -VD S , D rain-to-S ourc e V oltage (V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF5210
RD
VDS
50
VGS
D.U.T.
RG -
40 + VDD
-ID , Drain Current (A)

-10V
30 Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

20 Fig 10a. Switching Time Test Circuit

td(on) tr t d(off) tf
10 VGS
10%

0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C) 90%
VDS

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

1
Thermal Response (Z thJC )

D = 0.50

0.20

0.1 0.10

P DM
0.05
t1
0.02 t2
SINGLE PULSE
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF5210
VDS L
2000
ID

E A S , S ingle Pulse Avalanc he E nergy (m J)

TOP -8 .6A
RG D .U .T -1 5A
VD D
IA S A 1600 B O T TO M -21 A
-2 0 V D R IV E R
tp 0 .0 1Ω

1200

15V 800

Fig 12a. Unclamped Inductive Test Circuit

400
IAS

0 A
25 50 75 100 125 150 175
S tarting T J , J unc tion T em perature (°C )

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current
tp
V (BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRF5210
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

IRF5210
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)

10 .54 (.4 15) 3 .7 8 (.149 ) -B -

2.87 (.11 3) 10 .29 (.4 05) 3 .5 4 (.139 ) 4.69 ( .18 5 )
2.62 (.10 3) 4.20 ( .16 5 )
-A - 1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5) L E A D A S S IG NM E NT S
M IN 1 - GATE
1 2 3 2 - D R A IN
3 - S O U RC E
4 - D R A IN
1 4.09 (.55 5)
1 3.47 (.53 0) 4.06 (.16 0)
3.55 (.14 0)

0.93 (.03 7) 0.55 (.02 2)

3X 3X
0.69 (.02 7) 0.46 (.01 8)
1 .4 0 (.0 55 )
3X
1 .1 5 (.0 45 ) 0 .3 6 (.01 4) M B A M
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .

Part Marking Information

TO-220AB
E X AEMXPA LMEP :L ETH
: IS
TH IS A ISN AIR N F IR
1 0F1
1 00 1 0
W ITHW ITAHS SAESMS BE LMYB L Y A A
L O TL OCTO D
C EO D9EB 1M9B1M INRTE
IN TE N ARTNIO
A TIO
N A LN A L P A RPTA RNTU M
NBU EMRB E R
R E C TIFIE R IE R
R E C TIF
IR F IR
1 0F10
10 1 0
L O GL O G O 9 2 4962 4 6
9B 9B1 M 1 M D A TE
D A TE C O DC EO D E
A S SAESMSBE LMYB L Y
(Y Y W W ) W )
(Y Y W
L OTL O TC O D C EO D E
Y Y Y=Y Y=E AYRE A R
W WW =W W= EW E KE E K

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http://www.irf.com/ Data and specifications subject to change without notice. 5/98
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