CMOS answers

1. What is intrinsic and extrinsic semiconductor?

Ans: Intrinsic semiconductor is an un-doped semiconductor, in which there is no impurities added,

In this case, all carriers are created due to thermally or optically excited electrons from the full
valence band into the empty conduction band. Thus equal numbers of electrons and hole are
present in an intrinsic semiconductor.

An extrinsic semiconductor is one that has been doped with impurities to modify the number and
type of free charge carriers. Electrons and holes flow in opposite directions in an electric field though
they contribute to current in the same direction since they are oppositely charged. Hole current and
electron current are not necessarily equal in an intrinsic semiconductor.

2. What is CMOS Technology?

Ans: Complementary metal-oxide-semiconductor(CMOS)technology is a technology for constructing

integrated circuits. This technology has both N-type and P-type transistors are used to realize logic
functions. CMOS technology is used in microprocessors, microcontrollers, memories and application
specific integrated.

3. Advantages of CMOS IC?

Ans: a) Size is less.

b) High Speed.

c) Less Power Dissipation.

d) High noise margin High packing density.

4. What are four generation of circuits?

Ans: a) SSI (Small Scale Integration).

b) MSI (Medium Scale Integration).

c) LSI (Large Scale Integration).

d) VLSI (Very Large Scale Integration).

5. Why NMOS technology is preferred more than PMOS Technology?

Ans: N- channel transistors has greater switching speed when compared ‘tp’ PMOS transistors.

6. What are different MOS Layers?

Ans: a) n-diffusion.

b) p-diffusion

c) Polysilicon

d) Metal
CMOS answers
7. What are various capacitances with an MOSFET?

Ans: a) Gate to source capacitance (Cgs).

b) Gate to drain capacitance (Cgd).

c) Drain to source capacitance (Cds).

d) Input capacitance : Ciss = Cgs + Cgd, Cds shorted

e) Output capacitance : Coss = Cgd

f) Reverse transfer capacitance : Crss = Cds + Cgd

8. Vds-Ids Curve for an MOSFET, with increasing Vgs?

CMOS answers
9. Basic operation of MOSFET?

10. What is Channel Length Modulation?

Ans: The current between drain and source terminals is constant and independent of the applied
voltage over the terminals. This is not entirely correct. The effective length of the conductive
channel is actually modulated by the applied VDS, increasing VDS causes the depletion region at the
drain junction to grow, reducing the length of the effective channel.

11. What is body effect?

Ans: The threshold voltage Vth is not a constant w. r. to the voltage difference between the
substrate and the source of MOS transistor. This effect is called substrate-bias effect or body effect.

12. What is Latch up? What are the ways to prevent it?

Ans: Latch up is a condition in which the parasitic components give rise to the establishment of low
resistance conducting paths between VDD and VSS with disastrous results. Careful control during
fabrication is necessary to avoid this problem.

Remedies for the latch-up problem include:

* an increase in substrate doping levels with a consequent drop in the value of Rs;

* reducing Rp by control of fabrication parameters and by ensuring a low contact resistance to Vss;

* other more elaborate measures such as the introduction of guard rings.

13. Draw the graph of n-MOS depletion mode?

Ans:

14. Draw the diagram for the accumulation mode?

CMOS answers
15. Draw the Dc transfer characteristics curve?

Ans:

16. Define noise margin?

Ans: The minimum amount of noise that can be allowed on the input stage for which the output will
not be affected.

17. Define Rise Time?

Ans: Rise time,’tr’ is the time taken for a waveform to rise from 10% to 90% of its steady-state value.

18. Draw the symbol for tristate inverter.

Ans:

19. Give the relation of RT with FT.?

Ans:

20. Differentiate the nMOS from pMOS?

Ans: NMOS:- Metal-oxide semiconductors that are made on p-type substrates, and whose active
carriers are electrons that migrate between n-type source and drain contacts. Derived from n-
channel metal-oxide semiconductor.

PMOS:- Metal-oxide semiconductors that are made on n-type substrates, and whose active carriers
are holes that migrate between p-type source and drain contacts. Derived from p-channel metal-
oxide semiconductor.

21. What are all the factors can be extracted from the Vth equation?

Ans:

22. Define the Power dissipation?

Ans: When applying an electric voltage in a resistor, the energy is converted into heat. The result of
the energy per unit time is the power dissipation.

(P = W / t, P = U * I, P = R * I2, P = U2 / R).

Depending on the heat removal, there is a temperature rise of the resistance element.

23. Write short notes on MOS Model, Tristate Inverter?

Ans:

By, Veeru

Good Luck to all, bye