SGH80N60UFD

IGBT
SGH80N60UFD
Ultrafast IGBT

General Description Features

Fairchild's UFD series of Insulated Gate Bipolar Transistors • High speed switching
(IGBTs) provides low conduction and switching losses. • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A
The UFD series is designed for applications such as motor • High input impedance
control and general inverters where high speed switching is • CO-PAK, IGBT with FRD : trr = 50ns (typ.)
a required feature.

Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.

TO-3P E
G C E

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Description SGH80N60UFD Units

VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C 80 A
IC
Collector Current @ TC = 100°C 40 A
ICM (1) Pulsed Collector Current 220 A
IF Diode Continuous Forward Current @ TC = 100°C 25 A
IFM Diode Maximum Forward Current 280 A
PD Maximum Power Dissipation @ TC = 25°C 195 W
Maximum Power Dissipation @ TC = 100°C 78 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering
TL 300 °C
Purposes,/8” from Case for 5 Seconds

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.64 °C/W
RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 0.83 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W

©2002 Fairchild Semiconductor Corporation SGH80N60UFD Rev. B1

 SGH80N60UFD
Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/ Temperature Coefficient of Breakdown
VGE = 0V, IC = 1mA -- 0.6 -- V/°C
∆TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 40mA, VCE = VGE 3.5 4.5 6.5 V
Collector to Emitter IC = 40A, VGE = 15V -- 2.1 2.6 V
VCE(sat)
Saturation Voltage IC = 80A, VGE = 15V -- 2.6 -- V

Dynamic Characteristics
Cies Input Capacitance -- 2790 -- pF
VCE = 30V, VGE = 0V,
Coes Output Capacitance -- 350 -- pF
f = 1MHz
Cres Reverse Transfer Capacitance -- 100 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 23 -- ns
tr Rise Time -- 50 -- ns
td(off) Turn-Off Delay Time VCC = 300 V, IC = 40A, -- 90 130 ns
tf Fall Time RG = 5Ω, VGE = 15V, -- 50 150 ns
Eon Turn-On Switching Loss Inductive Load, TC = 25°C -- 570 -- uJ
Eoff Turn-Off Switching Loss -- 590 -- uJ
Ets Total Switching Loss -- 1160 1500 uJ
td(on) Turn-On Delay Time -- 30 -- ns
tr Rise Time -- 55 -- ns
td(off) Turn-Off Delay Time VCC = 300 V, IC = 40A, -- 150 200 ns
tf Fall Time RG = 5Ω, VGE = 15V, -- 160 250 ns
Eon Turn-On Switching Loss Inductive Load, TC = 125°C -- 630 -- uJ
Eoff Turn-Off Switching Loss -- 940 -- uJ
Ets Total Switching Loss -- 1580 2000 uJ
Qg Total Gate Charge -- 175 250 nC
VCE = 300 V, IC = 40A,
Qge Gate-Emitter Charge -- 25 40 nC
VGE = 15V
Qgc Gate-Collector Charge -- 60 90 nC
Le Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH

Electrical Characteristics of DIODE T C = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

TC = 25°C -- 1.4 1.7
VFM Diode Forward Voltage IF = 25A V
TC = 100°C -- 1.3 --
TC = 25°C -- 50 95
trr Diode Reverse Recovery Time ns
TC = 100°C -- 105 --
Diode Peak Reverse Recovery IF = 25A, TC = 25°C -- 4.5 10
Irr A
Current di/dt = 200A/us TC = 100°C -- 8.5 --
TC = 25°C -- 112 375
Qrr Diode Reverse Recovery Charge nC
TC = 100°C -- 420 --

©2002 Fairchild Semiconductor Corporation SGH80N60UFD Rev. B1

 SGH80N60UFD
250 120
Common Emitter 20V 15V Common Emitter
T C = 25℃ VGE = 15V
12V TC = 25℃
100
200 TC = 125℃
Collector Current, I C [A]

Collector Current, IC [A]

80
150 VGE = 10V

60

100
40

50
20

0 0
0 2 4 6 8 0.5 1 10

Collector - Emitter Voltage, V CE [V] Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage

Characteristics

4 60
V CC = 300V
Common Emitter
Load Current : peak of square wave
VGE = 15V
Collector - Emitter Voltage, VCE [V]

50

3 80A
Load Current [A]

40

40A
2 30

IC = 20A 20

1
10
Duty cycle : 50%
TC = 100℃
Power Dissipation = 60W
0 0
0 30 60 90 120 150 0.1 1 10 100 1000

Case Temperature, T C [℃] Frequency [Khz]

Fig 3. Saturation Voltage vs. Case Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level

20 20
Common Emitter Common Emitter
T C = 25℃ T C = 125℃
Collector - Emitter Voltage, VCE [V]

Collector - Emitter Voltage, VCE [V]

16 16

12 12

8 8

80A
4 80A 4
40A 40A

IC = 20A IC = 20A
0 0
0 4 8 12 16 20 0 4 8 12 16 20

Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, V GE [V]

Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE

©2002 Fairchild Semiconductor Corporation SGH80N60UFD Rev. B1

 SGH80N60UFD
4500 500
Common Emitter Common Emitter
4000 V GE = 0V, f = 1MHz V CC = 300V, VGE = ± 15V
T C = 25℃ IC = 40A
3500 T C = 25℃
Ton
Cies T C = 125℃
Capacitance [pF]

3000

Switching Time [ns]

2500 Tr
100
2000

1500
Coes
1000

500 Cres

0 20
1 10 30 1 10 70

Collector - Emitter Voltage, V CE [V] Gate Resistance, R G [Ω ]

Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs.

Gate Resistance

2000 5000
Common Emitter Common Emitter
VCC = 300V, VGE = ± 15V V CC = 300V, V GE = ± 15V
1000 IC = 40A IC = 40A
TC = 25℃ T C = 25℃
Toff
TC = 125℃ T C = 125℃
Switching Time [ns]

Eoff
Switching Loss [uJ]

Eon
1000
Tf Eoff

100
Tf

20 100
1 10 80 1 10 80

Gate Resistance, R G [Ω ] Gate Resistance, R G [Ω ]

Fig 9. Turn-Off Characteristics vs. Fig 10. Switching Loss vs. Gate Resistance
Gate Resistance

500 2000
Common Emitter Common Emitter
VCC = 300V, V GE = ± 15V V CC = 300V, V GE = ± 15V
1000
RG = 5Ω R G = 5Ω
TC = 25℃ T C = 25℃
Switching Time [ns]

TC = 125℃ T C = 125℃
Switching Time [ns]

Toff
100
Tf

Toff
100
Ton
Tf

Tr

10 20
10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80

Collector Current, IC [A] Collector Current, IC [A]

Fig 11. Turn-On Characteristics vs. Fig 12. Turn-Off Characteristics vs.
Collector Current Collector Current
©2002 Fairchild Semiconductor Corporation SGH80N60UFD Rev. B1
 SGH80N60UFD
3000 15
Common Emitter
RL = 7.5 Ω
TC = 25℃
1000

Gate - Emitter Voltage, VGE [ V ]

12
Switching Loss [uJ]

300 V
Eoff
100 6
V CC = 100 V 200 V
Common Emitter
Eon V CC = 300V, V GE = ± 15V
RG = 5Ω 3
T C = 25℃
T C = 125℃
10 0
0 10 20 30 40 50 60 70 80 0 30 60 90 120 150 180

Collector Current, IC [A] Gate Charge, Qg [ nC ]

Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics

500 500
IC MAX. (Pulsed)

100
IC MAX. (Continuous) 50us 100
Collector Current, IC [A]

Collector Current, I C [A]

100us
1㎳
10

DC Operation
10
Single Nonrepetitive
1
Pulse TC = 25℃
Curves must be derated
linearly with increase Safe Operating Area
o
in temperature V GE =20V, TC=100 C
0.1 1
0.3 1 10 100 1000
1 10 100 1000

Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, V CE [V]

Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics

0.5
Thermal Response, Zthjc [℃/W]

0.2
0.1
0.1

0.05

0.02
0.01
0.01 Pdm

t1
single pulse
t2

Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1E-3
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

Rectangular Pulse Duration [sec]

Fig 17. Transient Thermal Impedance of IGBT

©2002 Fairchild Semiconductor Corporation SGH80N60UFD Rev. B1

 SGH80N60UFD
100
TC = 25℃ V R = 200V
TC = 100℃ IF = 25A
100 T C = 25℃

Reverse Recovery Current, Irr [A]

T C = 100℃
Forward Current, I F [A]

10
10

1 1
0 1 2 3 100 1000

Forward Voltage Drop, VF [V] di/dt [A/us]

Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current

1000 120
V R = 200V VR = 200V
IF = 25A
Stored Recovery Charge, Qrr [nC]

IF = 25A
T C = 25℃ TC = 25℃
800 100
Reverce Recovery Time, t rr [ns]

T C = 100℃ TC = 100℃

600 80

400 60

200 40

0 20
100 1000 100 1000

di/dt [A/us] di/dt [A/us]

Fig 20. Stored Charge Fig 21. Reverse Recovery Time

©2002 Fairchild Semiconductor Corporation SGH80N60UFD Rev. B1

 SGH80N60UFD
Package Dimension

TO-3P
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20

3.80 ±0.20
ø3.20 ±0.10 +0.15
9.60 ±0.20 1.50 –0.05

18.70 ±0.20
12.76 ±0.20

19.90 ±0.20

23.40 ±0.20
13.90 ±0.20

2.00 ±0.20
3.50 ±0.20

3.00 ±0.20
16.50 ±0.30

1.00 ±0.20 1.40 ±0.20

+0.15
0.60 –0.05
5.45TYP 5.45TYP
[5.45 ±0.30] [5.45 ±0.30]

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation SGH80N60UFD Rev. B1

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PRODUCT STATUS DEFINITIONS

Definition of Terms

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Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

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Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I1