VN3205

N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BVDSS / RDS(ON) VGS(th) Order Number / Package
BVDGS (max) (max) TO-92 14-Pin P-DIP TO-243AA* Die†
50V 0.3Ω 2.4V VN3205N3 VN3205N6 VN3205N8 VN3205ND
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
†
MIL visual screening available

Product marking for TO-243AA:

Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
VN2L❋ vertical DMOS structure and Supertex’s well-proven silicon-gate
Where ❋ = 2-week alpha date code manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient
Features inherent in MOS devices. Characteristic of all MOS structures,
❏ Free from secondary breakdown these devices are free from thermal runaway and thermally-
induced secondary breakdown.
❏ Low power drive requirement
Supertex’s vertical DMOS FETs are ideally suited to a wide range
❏ Ease of paralleling
of switching and amplifying applications where high breakdown
❏ Low CISS and fast switching speeds voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Package Options
Applications
❏ Motor controls D1 1 14 D4
❏ Converters G1 2 13 G4
❏ Amplifiers S1 3 12 S4
❏ Switches
NC 4 11 NC
❏ Power supply circuits
S2 5 10 S3
❏ Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.) G2 6 9 G3

D2 7 8 D3
Absolute Maximum Ratings top view
Drain-to-Source Voltage BVDSS
14-pin DIP D
Drain-to-Gate Voltage BVDGS G
D
Gate-to-Source Voltage ± 20V S

Operating and Storage Temperature -55°C to +150°C SGD TO-243AA

TO-92 (SOT-89)
Soldering Temperature* 300°C
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.

11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
 VN3205

Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation θjc θja IDR* IDRM
@ TC = 25°C °C/W °C/W
TO-92 1.2A 8.0A 1.0W 125 170 1.2A 8.0A
†
SOT-89 1.5A 8.0A 1.6W (TA = 25°C) 15 78 1.5A 8.0A
‡ ‡ ‡
Plastic DIP 1.5A 8.0A 3.0W 41.6 83.3 1.5A 8.0A
* ID (continuous) is limited by max rated Tj. TA = 25°C.
†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
‡
Total for package.

Electrical Characteristics (@ 25°C unless otherwise specified)

Symbol Parameter Min Typ Max Unit Conditions
BVDSS Drain-to-Source Breakdown Voltage 50 V VGS = 0V, ID = 10mA
VGS(th) Gate Threshold Voltage 0.8 2.4 V VGS = VDS, ID = 10mA
∆V GS(th) Change in VGS(th) with Temperature -4.3 -5.5 mV/°C VGS = VDS, ID = 10mA
IGSS Gate Body Leakage 1 100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 10 µA VGS = 0V, VDS = Max Rating
1 mA VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current 3.0 14 A VGS = 10V, VDS = 5V
RDS(ON) Static Drain-to-Source TO-92 and P-DIP 0.45 Ω VGS = 4.5V, ID = 1.5A
ON-State Resistance
SOT-89 0.45 Ω VGS = 4.5V, ID = 0.75A
TO-92 and P-DIP 0.3 Ω VGS = 10V, ID = 3A
SOT-89 0.3 Ω VGS = 10V, ID = 1.5A
∆RDS(ON) Change in RDS(ON) with Temperature 0.85 1.2 %/°C VGS = 10V, ID = 3A
Ω
GFS Forward Transconductance 1.0 1.5 VDS = 25V, ID = 2A
CISS Input Capacitance 220 300
VGS = 0V, VDS = 25V
COSS Common Source Output Capacitance 70 120 pF
f = 1 MHz
CRSS Reverse Transfer Capacitance 20 30
td(ON) Turn-ON Delay Time 10 VDD = 25V
tr Rise Time 15 ns ID = 2A
RGEN = 10Ω
td(OFF) Turn-OFF Delay Time 25
tf Fall Time 25
VSD Diode Forward Voltage Drop 1.6 V VGS = 0V, ISD = 1.5A
trr Reverse Recovery Time 300 ns VGS = 0V, ISD = 1A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VDD

Switching Waveforms and Test Circuit

10V RL
90% PULSE
INPUT GENERATOR
OUTPUT
0V 10%
Rgen
t(ON) t(OFF)

td(ON) tr td(OFF) tF
D.U.T.
VDD INPUT
10% 10%
OUTPUT
0V 90% 90%

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 VN3205

Typical Performance Curves

Output Characteristics Saturation Characteristics
20 20

VGS =
10V VGS =
16 16 10V
ID (amperes)

ID (amperes)
12 8V 12 8V

8 8 6V
6V

4 4
4V 4V

3V 3V
0 0
0 10 20 30 40 50 0 2 4 6 8 10
VDS (volts) VDS (volts)

Transconductance vs. Drain Current Power Dissipation vs. Temperature

5 2.0

VDS = 25V TO-243AA (T A = 25°C)

4 1.6
P-DIP
GFS (siemens)

3 1.2
PD (watts)

TA = -55°C
25°C
2 0.8 TO-92
125°C

1 0.4

0 0
0 2 4 6 8 10 0 25 50 75 100 125 150
ID (amperes) TC (°C)

Maximum Rated Safe Operating Area Thermal Response Characteristics

10 1.0
TO-243AA
TO-92 (pulsed) (pulsed)
Thermal Resistance (normalized)

P-DIP (pulsed)
0.8

1.0 TO-243AA
ID (amperes)

TO-243AA (DC)
0.6 TA = 25°C
TO-92 (DC) PD = 1.6W

P-DIP (DC) 0.4

0.1

0.2 TO-92
TC = 25°C

P D = 1W
T C = 25°C
.01
0
0 1 10 100 0.001 0.01 0.1 1.0 10
VDS (volts) tp (seconds)

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 VN3205

Typical Performance Curves

BVDSS Variation with Temperature On-Resistance vs. Drain Current
1.1 1.0

VGS = 4.5V
0.8
BVDSS (normalized)

RDS(ON) (ohms)
VGS = 10V
0.6

1.0

0.4

0.2

0.9 0
-50 0 50 100 150 0 4 8 12 16 20
Tj (° C) ID (amperes)

Transfer Characteristics VGS(th) and R DS(ON) Variation with Temperature

10 1.2 1.6

VDS = 25V
RDS(ON) @ 10V, 3A
8 1.1 1.4
TA = -55°C

RDS(ON) (normalized)
VGS(th) (normalized)

25°C
ID (amperes)

6 1.0 1.2
125°C

4 0.9 1.0

2 0.8 VGS(th) @ 1mA 0.8

0 0.7 0.6
0 2 4 6 8 10 -50 0 50 100 150
VGS (volts) Tj (°C)

Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics

400 10
f = 1MHz
VDS = 10V
8
300

VDS = 40V
C (picofarads)

VGS (volts)

CISS 6
325 pF
200

100
COSS 2

CRSS
215 pF
0 0
0 10 20 30 40 0 1 2 3 4 5
VDS (volts) QG (nanocoulombs)

11/12/01

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4 www.supertex.com