The Ebers-Moll representation of the BJT

The Ebers-Moll representation of the BJT

Ebers-Moll model for pnp transistor is shown in the figure. It consists of two back-to-
back connected diodes whose cathodes are connected. The base region is common to both
emitter and collector junctions. Since base region is very narrow considerable interaction
exists between the junctions. This coupling is represented by the controlled current sources.
The current IED and ICD are relative to VEB by the diode volt-ampere relation and is given by

 
I E  I ED   R I CD  I ES  VEB / VT  1   R I CS ( VCB / VT  1) --------(1)

IC   F I ED  ICD   F I ES ( VEB / VT  1)  ICS  VCB / VT  1   ----(2)

The relationships expressed in Eq(1) and Eq(2) are known as the Ebers-Moll equations. The
quantities IES and ICS in above equations are the reverse saturation currents of the emitter-
base and collector-base junctions, respectively.

The parameters αF and αR are each less than unity. The four quantities IES, ICS, αF, αR are
function of doping densities and transistor geometry and they related by

αFIES = αRICS ------------(3)

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 The Ebers-Moll representation of the BJT

and 0.98 ≤ αF ≤ 0.998 and 0.40 ≤ αF ≤ 0.8

and IES and ICS are in the order of 10-15 A, both depends on the junction areas.

Eber-Moll equations for npn transistor:

The directions of all current components and junction voltages for an npn transistor
are reversed from those for a pnp device as shown Fig. The Ebers-Moll equations for an npn
device are given below.

 
I E   I ES  VEB / VT  1   R I CS ( VCB / VT  1) --------(4)


I C   F I ES ( VEB / VT  1)  I CS  VCB / VT  1 -------(5)
Large-Signal Current Gains:

Let us consider npn for the situation that emitter-base is forward biased(VEB<0) and that the
collector and base terminals are short-circuited(VCB=0). Under these conditions Eq(4) and (5)
becomes


 I E  I ES  VEB / VT  1 
and

I C   F I ES ( VEB / VT  1)

 I C   F I E  and  F is defined as

IC
F   VCB  0 -------(6)
IE

The quantity αF is called common-base forward short-circuit current gain.

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 The Ebers-Moll representation of the BJT

Similarly, when VCB<0, the common-base reverse short-circuit current gain αR is determined
as

IE
R   VEB  0 ------(7)
IC

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