Practical EMI-lter-design procedure for high-power high-frequency SMPS according to MIL-STD 461

I. Cadirci, B. Saka and Y. Eristiren Abstract: The paper presents a very practical EMI-lter design procedure for high-power highfrequency switch-mode power supplies (SMPS), conforming to the military standard MIL-STD 461. The design procedure is based on the knowledge of base-line common-mode (CM), and differential-mode (DM) EMI. Conducted-emission tests are carried out rst according to MILSTD 461. The measuring current probe only is used to separate the total conducted EMI into CM, and DM components, without the need for a special noise separator. The current attenuation of the lter is then simulated by a MATLAB program, using simplied high-frequency equivalentcircuit models for CM- and DM-lter components. Based on the proposed design procedure, a prototype EMI lter has been implemented for a unity-power-factor boost convertor, operating at a switching frequency of 20 kHz and an output power of 4 kW. Practical aspects in the implementation, such as lter-layout considerations and component selection, are discussed. The performance tests were carried out experimentally on the implemented lter according to MILSTD 461, to verify the validity of the design procedure.

Introduction

Electromagnetic interference has been a major problem in power electronics. Owing to the rapid changes in voltages and currents within a switching power convertor, power-electronic equipment are sources of conducted and radiated EMI for other equipment. Unlike microwave engineering, in power electronics, the EMI problems are mostly conductive in nature. The conducted part of EMI is mainly reduced by the EMI lters together with proper design of the circuit layout. Some EMC-design aspects for high-power AC/DC convertors have been presented in the literature [14], in which major EMI noise sources have been identied, and countermeasures to reduce the noise level have been proposed. Some methods, and systematic procedures for designing EMI lters for AC-line applications, have also been introduced [512]. Practical procedures for designing EMI lters for AC-line applications, based on differentialmode (DM), and common-mode (CM) noise-voltage measurements according to industrial standards, such as EN 50081-1,-2, have been presented in [7, 8]. These lead to a quick lter design that meets only the low-frequency part of the design specications. Once designed and built, modications are necessary to satisfy the high-frequency specications dictated by parasitic parameters of practical EMI-lter capacitors and inductors. Equivalent circuits have been developed in [9] for the CM and DM noise sources
r IEE, 2005 IEE Proceedings online no. 20045079 doi:10.1049/ip-epa:20045079 Paper rst received 30th June 2004 and in revised form 2nd December 2004. Originally published online: 4th May 2005 I. Cadirci and B. Saka are with the Electrical and Electronic Engineering Department, Hacettepe University, Beytepe Campus, Ankara TR06532, Turkey I. Cadirci is also with the Power Electronics Group, TUBITAK-Bilten, METU Campus, Ankara TR06531, Turkey Y. Eristiren is with Siemens San. ve Tic. A.S., Yakacik Yolu No: 111, Kartal TR 81430, Istanbul, Turkey E-mail: cadirci@bilten.metu.edu.tr IEE Proc.-Electr. Power Appl., Vol. 152, No. 4, July 2005

represented by off-line switch-mode power supplies (SMPS). These models provide valuable insight into the issues which determine the optimum design of a power-line EMI lter, and furnish a means of estimating the lter effectiveness in SMPS applications. Further, a special noise separator has been used in [10] to separate the CM- and DM-noise components. The high-frequency characteristics of an input lter have been analysed, and the effect of parasitic parameters of EMI-lter capacitors, and CM inductors has been discussed, using parameter-sensitivity analysis [11]. In this paper, a practical EMI-lter-design procedure is presented for medium-high-power, high-frequency SMPS, to comply with the military standard, MIL-STD 461. MILSTD 461 calls for noise-current measurements (like some other military, aeronautic, and vehicular industry standards), in a frequency range from 10 kHz up to 30 MHz, instead of voltage measurements as do many industrial standards. In this work, the measuring current probe only is used to separate the total conducted EMI into CM and DM components, without the need for a special noise separator. The current attenuation of the lter is simulated by a MATLAB program based on simplied high-frequency equivalent-circuit models for CM-, and DM-noise-lter components. A prototype EMI lter has been implemented for a unity-power-factor boost convertor, operating at a switching frequency of 20 kHz, and at a 4 kW output power, based on the proposed design procedure. Practical aspects in the implementation, such as lter-layout considerations and component selection have also been discussed. The proposed EMI-lter-design procedure is then veried experimentally on the implemented lter placed at the 220 V, 50 Hz AC side of the convertor to reduce the level of conducted EMI under the limits of MIL- STD 461. 2 Initial EMI measurements on actual system

Since MIL-STD 461 calls for current measurements instead of voltage measurements, it is found to be useful to employ the measuring-current probe as a noise separator, for separating the total conducted EMIFmeasured at the
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phase, and neutral wiresFinto CM- and DM-noise components.

ground ground plate

neutral

phase

2.1

System description (noise source)

The power stage of the convertor used as the noise source in the case study consists of 4 kW unity-power-factor boostconverter modules, operating at a switching frequency of 20 kHz (varying between 17.5 and 19 kHz for different modules), as shown in Fig. 1. One such module is picked up among 10 identical units, operating in the eld.

LISN

LISN

isolation transformer

50

50

line 220 V, 50 Hz neutral

D1

D2

L1 Q1

current probe D5 load DUT power converter supply cable spectrum analyser

D3

D4 a

Fig. 1 study

AC/DC power convertor (noise source) used in the case

ground ground plate

neutral

phase

2.2 Test setup for initial EMI measurements on the actual system
Designing an EMI lter requires the information on trouble some frequency and the level of noise at that frequency, which can either be predicted by the designer or measured. In this paper, the CM, and DM troublesome frequencies, and the noise levels at those frequencies are measured according to MIL-STD 461, before starting the design of the EMI lter. The equipment used in the measurements is: (i) Spectrum analyser (HP8561E) (ii) Two line-impedance-stabilisation networks (LISN), designed according to the MIL-STD 461 specications, (iii) Current probe SOLAR 6741-1, with a at response between 10 kHz, and 50 MHz. MIL-STD 461 calls for current measurements on each of the conductors, i.e. phase and neutral wires. However, these noise current data logged at phase and neutral wires are not sufcient to design the lter, since an EMI lter is a compound of CM-lter and DM-lter components. To determine these component values, it is necessary to have information on both CM and DM noise data. The CM and DM noise data have been logged with the phase wire, neutral wire and the current probe congured as shown in Fig. 2a and b, respectively. The CM- and DM-noise-current measurements shown in Fig. 3 are the 6 dB-subtracted (i.e. half the signal level) forms of the actual measured noise. This is due to the fact that the CM- and DM-noise measurements carried out on the setups given in Fig. 2a and b, yield to twice the level of CM-noise current (ICM), and DM-noise current (IDM), i.e.:  During the CM-current measurements, the actual current measured is Imeasured Iphase Ineutral ICM IDM ICM IDM 2ICM  During the DM-current measurements, the actual current measured is Imeasured Iphase Ineutral ICM IDM ICM IDM 2IDM
776

LISN

LISN

isolation transformer

50

50

current probe DUT power converter supply cable spectrum analyser

Fig. 2

EMI-measurement set-ups

a CM conducted EMI measurement b DM conducted EMI measurement

The CM- and DM-noise data are logged, and 6 dB is subtracted through the whole frequency range of interest, as given in Fig. 3a and b, respectively. 3 EMI-lter design

3.1

Design procedure

The EMI-lter-design steps according to MIL-STD 461 can be summarised as follows: (a) Using the setups in Fig. 2a, and b, CM- and DM-noise currents are measured (in dB mA) in the frequency range of interest, according to the peak limits imposed by MIL-STD 461 represented by the two straight lines in the logarithmic scale as shown in Fig. 3. (b) CM- and DM-attenuation requirements are determined from (1), and (2), as illustrated in Fig. 4a and b, for the case study: IreqCM ICM Ilimit dB 1 2

IreqDM IDM Ilimit dB

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100 90 80 CM noise attenuation, dB 105 106 frequency, Hz a 110 100 90 80 noise, dBuR 70 60 50 40 30 20 10 104 105 106 frequency, Hz b 107 108 DM noise attenuation, dB 107 108 70 noise, dBuR 60 50 40 30 20 10 0 104

70 60 50 40 30 20 10 0 101

102

103 frequency, kHz a

104

105

50

40

30

20

10

Fig. 3

Measured EMI spectra at the convertor input

a CM noise data b DM noise data MIL-STD 461 C class A3, CE03 NB

0 100

101

102

103

104

105

frequency, kHz b

Fig. 4

CM- and DM-noise-attenuation requirements

where, ICM, and IDM are obtained from the rst step, and Ilimit is the conducted EMI limit specied in the standard. (c) The lter corner frequencies for both CM and DM parts are determined rst by considering them both as singlestage LC lters, as shown in Fig. 5. Filter corner frequencies can be determined graphically, by drawing a 40 dB/decade slope-line tangent to CM and DM noise-attenuation requirements, IreqCM, and IreqDM, respectively, as represented in Fig. 6a and b for the case study. (d) Determine DM-lter components Ld and Cx: DM attenuation (DMattn) of the lter is dened as follows: DMattn ILISN without filter Is;DM ILISN with filter Io;DM Zc;DM Is;DM ZL;DM Zc;DM 3 4

a CM-attenuation requirement Ireq CM b DM-attenuation requirement Ireq DM

Ld line Z LISN 200 V neutral Z LISN L d Lc Cx Cy

neutral phase

Cy

noise source

Fig. 5

EMI-lter topology having a single-stage DM part

Io;DM

The corner frequency fcDM of this circuit is the frequency where DMattn 0: ) fcDM 1 p where LDM 2Ld and CDM Cx 2p LDM CDM 7 A compromise should be made while selecting Ld and Cx values. A large Ld value requires big cores, which would be difcult to implement. A large Cx value, however, causes the self-resonance frequency (SRF) of the lter to be relatively low, which may yield to resonance problems, resulting in a lter providing insertion gain instead of loss.
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where ZL,DM joLDM, and Zc,DM 1/(joCDM), and Io,DM and Is,DM are the DM LISN currents, with, and without lter, respectively. Io;DM Is;DM Is;DM
1 1o2 LDM CDM 1 joCDM 1 joCDM

joLDM

DMattn Is;DM

 1 o2 LDM CDM

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70 line 60 CM noise attenuation, dB 220 V 50 40 30 50 20 10 0 101 40 DM noise attenuation, dB 40 dB/decode neutral ZLISN

Ld Lc Cx ZLISN L d Cy Cy

Ld phase Cx Ld noise source neutral

Fig. 7

EMI-lter topology having a two-stage DM part

80 dB/decode 30

fc= 50 kHz

102 a

103 frequency, kHz

104

105

20

50

10 40 DM noise attenuation, dB 40 dB/decode 30 fc = 9 kHz 0 100 101 102 103 104 105

frequency, kHz 20

Fig. 8

DM-lter corner frequency for a two-stage LC lter

10

against-frequency curve (IreqDM). With this new corner frequency, LDM 2Ld 142 mH ) Ld 71 mH.

3.2.2 CM part: The required CM-lter corner fre0 100 101 fc= 4 kHz 102 103 104 105

frequency, kHz
b

quency is determined as fc 50 kHz from Fig. 6a. Considering a leakage-current safety limit of 2.5 mA, Cy 33 nF is selected. Then, from (8), LCM Lc+Ld/ 2 153.5 mH ) Lc 123 mH.

Fig. 6

Filter cornering frequencies

3.3

Simulation of the EMI lter

a CM-lter corner frequency b DM-lter corner frequency for a single-stage LC lter

(e) Determine CM-lter components Lc and Cy: Using similar equations to those given in (3)(6), the CM-lter corner frequency can be written as fcCM 1 p 2p LCM CCM 8

where LCM Lc+Ld/2 and CCM 2 Cy Again, a trade-off is necessary to determine the CMcomponent values. Cy is chosen as large as possible within the safety-leakage-current limits specied in standards.

3.2

Choice of component values

The high-frequency models of the chosen inductors and capacitors are used in the simulation of the designed EMI lters current-attenuation-against-frequency characteristics. For this purpose, a frequency-domain analysis is carried out using the MATLAB software. The current ILISN owing through the LISN impedance (ZLISN) is found in terms of the noise-source impedance Zp, noise-source currents (Is,DM, and Is,CM), and lter component impedances. Moreover, the ZLISN-against-frequency characteristic for MIL-STD 461, modelled piecewise logarithmically as shown in Fig. 9, is also included in the simulations. The current-attenuation expression is then swept through the frequency domain in a logarithmic scale, starting from 10 kHz, and ending at 100 MHz. The simulations are carried out separately for the CM and the DM parts of the lter circuit, as explained below.

The DM- and CM-lter-component values are selected as explained in the following.

3.3.1 CM part: The simplied CM equivalent-circuit

model of the EMI lter is shown in Fig. 10. If Rp in the high-frequency equivalent-circuit model of the capacitor given in the Appendix is large (i.e. Rp ) 1=oCy ), then ZCy Rs joL 1=joCy , where Rs and L are the equivalent-series-resistance (ESR) and parasitic-inductance (ESL) values of the capacitors (see Appendix). Simulations are carried out without the knowledge of the noise-source impedance, which is modelled as a constant impedance RjoLc (Zp 10 kO) current source [9]. Further, ZLc 1joCRjoLc where, R and C are the ESR, and parasitic capacitance
IEE Proc.-Electr. Power Appl., Vol. 152, No. 4, July 2005

3.2.1 DM part: Selecting the highest value of commercially available Cx capacitor as CDM Cx 2.2 mF, then LDM 2Ld 719 mH ) Ld 359 mH. This Ld value is too high, and difcult to implement in a single stage. Then, the DM part of the lter is converted into two-stage as shown in Fig. 7, to reduce the inductance value per stage. The corresponding DM corner frequency is determined as fcDM 9 kHz from Fig. 8, by drawing an 80 dB/decade slopeline tangent to the DM-noise-attenuation-requirement778

50

120 100

40 LISN impedance, 80 30 attenuation, dB 102 103 frequency, kHz 104 105 60 40 20 10 0 0 101 20 105

20

106 frequency, Hz

107

108

Fig. 9

ZLISN against frequency characteristic used in simulations

ZLc

Fig. 11

CM attenuation of the EMI lter

2ZLd 2ZLd

L, N Io, CM ZLISN 2 ZCy Zp Is, CM

L Io, DM 2ZLISN ZCx ZCx Zp Is, DM

N ground

Fig. 12 Simplied CM equivalent-circuit model

Simplied DM equivalent-circuit model

Fig. 10

values in the high-frequency equivalent-circuit model of inductors given in the Appendix. Tables 1 and 2 in the Appendix (Section 8) are used to determine the parasitic parameters of both the inductors and capacitors used in the simulation of the CM lter. Thus, following component values are chosen: R 10 mO, C 5 pF, Rs 0.15 O, and L 25 nH. For this case, Io;CM ZCy ==Zp IS;CM ZLc 0:5 ZLISN ZCy ==Zp 9

From (9), CM current attenuation is derived as given in (10): CMattn IS;CM ZLc 0:5 ZLISN ZCy ==Zp Io;CM ZCy ==Zp 10

permeabilities and the ESR of inductors with frequency have not been taken into consideration in the simulations, and the unknown noise-source impedance has been assumed as a constant impedance over the whole frequency range. Therefore, simulations carried out give more accurate information on the DM current attenuation around the troublesome frequency of 20 kHz than at higher frequencies. After simplications in the circuit, Io,DM is expressed as given in (11). The DM part of the lter provides a current attenuation of 25 dB at 20 kHz (the DM troublesome frequency), according to the simulation results given in Fig. 13, as expected. Io;DM Zpc ZCx IS;DM 2ZLd Zpc 2ZLd 2ZLISN ZCx ZCx 2ZLd 2ZLISN 11

CM current attenuation is then swept through the frequency range of interest, and the current-attenuation curve in Fig. 11 is obtained. The CM part of the lter is supposed to provide 64 dB attenuation at 2 MHz (the CM troublesome frequency); it yields indeed 60 dB attenuation at this frequency. Parasitic components of lter elements cause the CM part of the lter to provide slightly lower than desired current attenuation.

180 160 140 attenuation, dB 120 100 80 60 40 20 0 104 105 106 frequency, Hz 107 108

3.3.2 DM part: The simplied DM equivalent-circuit

model of the EMI  lter is given in Fig. 12, where  1 1 If Rp is large Rp ) oCx ; ZCx Rs joL joCx Zp
RjoLd 10 kO and ZLd 1joCRjoLd Using Tables 1 and 2 in the Appendix, the, following component values are chosen for the inductor: R 10 mO, C 5 pF, and for the capacitor, Rs 0.15 O, and L 100 nH. Only the Rs value is measured with a frequency-selective RLC meter at 10 kHz. The effect of Cys was neglected due to the large Cx value compared with the value of Cy in the practical lter. The variations in core

Fig. 13

DM attenuation of the EMI lter

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IEE Proc.-Electr. Power Appl., Vol. 152, No. 4, July 2005

where Zpc Z p ==Z Cx . From (11), DM current attenuation is IS;DM DMattn Io;DM 2ZLd Zpc 2ZLd 2ZLISN ZCx ZCx 2ZLd 2ZLISN Zpc ZCx 12

Implementation

4.1

Component selection

4.1.1 Inductors: The selection criteria for the CMand DM-lter inductor cores of the EMI lter are given here. The EMI lter requires soft cores that are driven into saturation slowly. (a) DM inductor: Ld The core material chosen to work as a DM inductor must be able to withstand a signicant 50 Hz ux-density component without saturating, and it should have low core losses at 50 Hz, while having high core losses at the noise frequencies (i.e. for f410 kHz). The iron-powder material with a distributed airgap structure, high Bsat value and low permeability is well suited to this requirement. To satisfy the prespecied Ld value, Micrometals 26 and 40 materials, with the specications given in Table 3 (see Appendix) are chosen. Two different cores have been used to obtain the required inductance value per stage (T400-40D with a number of turns N 18, and a temperature rise of DT 191C; and T400-26 with N 24, DT 251C). (b) CM inductor: Lc Often, a high CM inductance value is required, since the value of Y-capacitors is limited for many equipment to the nanofarad level, i.e. low-leakage power-line lters are required. Unlike the DM inductor, the core material chosen to operate as a CM inductor is not intended to withstand a signicant 50 Hz component of ux density. The proper core material to handle the high-frequency CM currents is ferrite. The selected core should maintain its initial permeability at the troublesome frequency (around 2 MHz in the case study). Siemens N30 material is suitable for this purpose. To obtain the required inductance value B64290L82-X830 core is chosen, with N 4 turns on both the line and neutral sides. Manufacturer specications for this material are given in Appendix 1 (Table 4).

(ii) The connection between the lter and the noise source are kept as short as possible. Since CM-choke coils are sensitive to external magnetic elds, they are placed in a shielding. The magnetic eld generated by the DM inductors is high enough to interfere with the CM inductor, due to the high currents carried. To avoid this problem, the CM part has been shielded. (iii) While winding inductors of the lter, the spacing between the rst and last windings is kept at least 30 to raise the SRF. This is important, since the SRF of the inductor depends on the total effective stray capacitance between the rst and last turns. (iv) The input and output of the lter are kept as far as possible from each other. Thus, radiated coupling between the noisy and ltered circuits is kept to a minimum. (v) Ground connections with the noise source and the line side are made in such a way that they do not cause current ow through the ground paths. The only ground inside the lter is the CM node between the Y-capacitors. Grounding of the lter during tests is made only through this node.

DM part stage 2 converter side

CM part

DM part stage 1 line side

4.1.2 Capacitors: Cx and Cy: The EMI capacitors

should present a high resistance to voltage surges, current surges, and against ionisation, with a qualied dielectric to self-heal. Furthermore, the ESL values of the capacitors should be chosen to be as low as possible to keep the SRF as high as possible. Metallised-lm X and Y capacitors (Cx 2.2 mF from Siemens: B81133-C1225-M26; and Cy 33 nF from Philips Components: MKP336 6033) were selected, according to specications given in manufacturers data sheets Fig. 13.

4.2

Filter layout

The layout of the implemented EMI lter is shown in Fig. 14. The layout, and grounding especially, gain importance in attaining the desired CM attenuation. The following points are taken into account in nalising the layout of the lter: (i) The lter and the noise source are grounded on the same metal plate.
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Fig. 14

The EMI lter constructed

a Front view b Top view

IEE Proc.-Electr. Power Appl., Vol. 152, No. 4, July 2005

(vi) The leads of capacitors are made as short as possible to increase the SRF of capacitors. Feedthrough capacitors should be used whenever possible. (vii) Screened cable is used for connection between the noise source, and the load.

Test results

The EMI-lter design procedure and simulation results have been veried by measurements carried out at the phase and neutral wires of the converter, according to MIL-STD 461. The experimental results obtained are given in Fig. 15a and b. It can be seen from these measurements that, EMI spectra of the phase and neutral wires remain below limits over the major part of the frequency range. Conducted EMI levels remain slightly above the limits in the MHz range due to the relatively high noise-oor level at these frequencies (residual noise of the test room is close to

Fig. 16

Noise oor level of the test room

MIL-STD 461 limits, as seen from Fig. 16), during measurements. Furthermore, above 5 MHz, the CM noise is not ltered as desired, as also veried by the simulation results. Besides the relatively high noise-oor level, the reduction of current attenuation above 5 MHz is also lower owing to the fact that the CM component of the lter falls in self-resonance around 5 MHz. This causes the CM inductor to behave like a capacitor, and Y-capacitors to behave like inductors above this frequency (see Fig. 17 in Appendix). 6 Conclusions

A practical EMI-lter-design procedure according to MILSTD 461 is presented, based on CM- and DM-conducted EMI separation. For this purpose, the measuring-current probe is used as a balun transformer to differentiate CMand DM-conducted EMI by measurements. The expected lter performance has been veried by simulations carried out on MATLAB, based on simplied high-frequency equivalent-circuit models for the CM- and DM-noise lters. The variation of LISN impedance with frequency is included in the simulations, where the noise source is modelled as a constant-impedance current source. Practical aspects of the implementation, such as lter-layout considerations and component selection have been discussed. The experimental work was carried out on a unitypower-factor boost-type, medium-power convertor. It has proven the validity of the proposed practical EMI-lterdesign procedure for power-electronic equipment, according to MIL-STD 461. 7 References

Fig. 15 Measured EMI spectra after insertion of the conducted EMI lter
a Noise data logged at the phase wire b Noise data logged at the neutral wire
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1 Reis, F.S.D., Sebastian, J., and Uceda, J.: Determination of EMI emission in power factor pre-regulators by design. IEEE PESC94 Proc., pp. 11171126 2 Rossetto, L., Buso, S., and Spiazzi, G.: Conducted EMI issues in a 600 W single-phase boost PFC design, IEEE Trans., 2000, IA-36, (2), pp. 578585 3 Rossetto, L., Spiazzi, G., and Tenti, P.: Boost PFC with 100 Hz switching frequency providing output voltage stabilisation and compliance with EMC standards, IEEE Trans., 2000, IA-36, (1), pp. 188193 4 Chen, Q.: Electromagnetic interference design considerations for a high power AC/DC converter. IEEE PESC98 Proc., May 1998, pp. 11591164 5 Moo, C.S., Yen, H.C., Hsieh, Y.C., and Chuang, Y.C.: Integrated design of EMI lter and PFC low pass lter in power electronic converters, IEE Proc.-B, 2003, 150, (1), pp. 3944 781

6 Nagel, A., and De-Doncker, R.W.: Systematic design of EMI lters for power converters. IEEE IAS 2000 Annual Meeting, 2002 Conf. Rec., pp. 25232525 7 Shih, F.Y., Chen, Y.P., Wu, Y.P., and Chen, Y.T.: A procedure for designing EMI lters for AC line applications, IEEE Trans., 1996, PE-11, (1), pp. 170181 8 Caponet, M.C., Profumo, F., and Tenconi, A.: EMI lter design for power electronics. IEEE PESC 2002 Conf. Proc., pp. 20272032 9 Schneider, L.M.: Noise source equivalent circuit model for off-line converters and its use in input lter design. IEEE Symp. Proc., 1983, pp. 167175 10 Guo, T., Chen, D.Y., and Lee, F.C.: Separation of common-mode and differential mode conducted EMI noise, IEEE Trans., 1996, PE11, (3), pp. 480487 11 Liu, D.H., and Jiang, J.G.: High frequency characteristic analysis of EMI lter in SMPS. IEEE PESC 2002 Conf. Proc., pp. 20392043 12 Ozenbaugh, R.L.: EMI lter design (Marcel Dekker Inc., New York, 1996)

Table 2: Typical parasitic-component values of lter chokes in HF equivalent circuit

Choke coil inductance (mH) o50 50200 4200 Series resistance (m O) 1.5 mO 10 mO 500 Parasitic capacitance (pF) 2 5 1030

Table 3: DM-core-material product specications

Part AL (nH/N2) Aw (mm2) 2570 2570 Ac (mm2) 685 346 Mpl (cm) 25 25 V (cm3) As (mm2) 184.85 92.42 27707 19455

Appendix
L R L Rs C

T400-40D 230 T400-26 131

Aw : core-winding area; Ac : core effective area; Mpl : magnetic-path length; V : core volume; and As : core surface area
C a Rp b

Fig. 17 High-frequency equivalent circuit models of EMI lter inductors and capacitors
a Inductor b Capacitor

Table 4: CM-core-material product specications

Part Material type AL d0 (nH/N2) (mm) 8700 50 di (mm) h (mm) Mpl (cm)

Table 1: Typical parasitic-component values of commercially available capacitors in HF equivalent circuit

Capacitance of EMI lter capacitor (nF) o10 101000 41000 Parasitic inductance (nH) 1020 40 30100

B64290- N30 L82-X830

30

20

12.56

782

IEE Proc.-Electr. Power Appl., Vol. 152, No. 4, July 2005