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AP4407GM

Pb Free Plating Product

Advanced Power Electronics Corp.


Simple Drive Requirement Low On-resistance Fast Switching Characteristic
D D D D

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS RDS(ON) ID
G S S S

-30V 14m -10.7A

SO-8

Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

G S

Absolute Maximum Ratings


Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3

Rating -30 25 -10.7 -8.6 -50 2.5 0.02 -55 to 150 -55 to 150

Units V V A A A W W/

Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range

Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3

Value Max. 50

Unit /W

Data and specifications subject to change without notice

201125031

AP4407GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS BVDSS/Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Test Conditions Min. -30 -1 Typ. -0.015

Max. Units 14 20 -3 -1 -25 100 46 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF

VGS=0V, ID=-250uA Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C)
o o

VGS=-10V, ID=-10A VGS=-4.5V, ID=-5A VDS=VGS, ID=-250uA VDS=-10V, ID=-10A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 25V ID=-10.7A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz

13 29 6 14 15 12 100 70 500 370

Gate-Source Leakage Total Gate Charge


2

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2

2600 4100

Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2

Test Conditions IS=-10.7A, VGS=0V IS=-10.7A, VGS=0V, dI/dt=100A/s

Min. -

Typ. 31 25

Max. Units -1.2 V ns nC

trr
Qrr

Reverse Recovery Time Reverse Recovery Charge

Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on min. copper pad.

AP4407GM
44 40

40

T A =25 C

36

32

-ID , Drain Current (A)

28

-ID , Drain Current (A)

-10V -5.0V -4.5V -4.0V

36

T A =150 o C

32

28

-10V -5.0V -4.5V -4.0V

24

24

20

20

16

16

V G =-3.0V

12

12

V G =-3.0V
8 4

-V DS , Drain-to-Source Voltage (V)

-V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

16

1.80

I D =-10A T A =25 C Normalized R DS(ON)


14

1.60

I D =-10A V GS = -10V

1.40

RDS(ON) (m )

1.20

12

1.00

0.80

10

0.60 3 5 7 9 11 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V)

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance v.s. Junction Temperature


3

100.00

10.00 2

T j =25 o C

-IS(A)

1.00

-VGS(th) (V)
1 0 -50

T j =150 o C

0.10

0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5

50

100

150

-V SD , Source-to-Drain Voltage (V)

T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction Temperature

AP4407GM
f=1.0MHz
14

10000

12

I D =-10.7A V DS =-24V Ciss C (pF)

-VGS , Gate to Source Voltage (V)

10

1000

Coss
4

Crss

100

20

40

60

80

13

17

21

25

29

Q G , Total Gate Charge (nC)

-V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

100

100us
10

Normalized Thermal Response (Rthja)

DUTY=0.5

0.2

1ms
1

0.1

0.1

0.05

-ID (A)

10ms 100ms

0.02 0.01

PDM

0.01

Single Pulse

t T
Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125/W

0.1

T A =25 o C Single Pulse

1s 10s DC
10 100

0.01

0.001

0.1

0.0001

0.001

0.01

0.1

10

100

1000

-V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

VDS 90%

VG QG -4.5V QGS QGD

10% VGS td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

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