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BVDSS RDS(ON) ID
G S S S
SO-8
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S
Rating -30 25 -10.7 -8.6 -50 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 50
Unit /W
201125031
AP4407GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS BVDSS/Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Test Conditions Min. -30 -1 Typ. -0.015
VGS=0V, ID=-250uA Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C)
o o
VGS=-10V, ID=-10A VGS=-4.5V, ID=-5A VDS=VGS, ID=-250uA VDS=-10V, ID=-10A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 25V ID=-10.7A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
2600 4100
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2
Min. -
Typ. 31 25
trr
Qrr
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on min. copper pad.
AP4407GM
44 40
40
T A =25 C
36
32
28
36
T A =150 o C
32
28
24
24
20
20
16
16
V G =-3.0V
12
12
V G =-3.0V
8 4
16
1.80
1.60
I D =-10A V GS = -10V
1.40
RDS(ON) (m )
1.20
12
1.00
0.80
10
T j , Junction Temperature ( C)
100.00
10.00 2
T j =25 o C
-IS(A)
1.00
-VGS(th) (V)
1 0 -50
T j =150 o C
0.10
50
100
150
T j , Junction Temperature ( o C)
Reverse Diode
AP4407GM
f=1.0MHz
14
10000
12
10
1000
Coss
4
Crss
100
20
40
60
80
13
17
21
25
29
100
100us
10
DUTY=0.5
0.2
1ms
1
0.1
0.1
0.05
-ID (A)
10ms 100ms
0.02 0.01
PDM
0.01
Single Pulse
t T
Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125/W
0.1
1s 10s DC
10 100
0.01
0.001
0.1
0.0001
0.001
0.01
0.1
10
100
1000
VDS 90%