Pl-12

Extraction of RF Parameters in Planar Channel MOSFETs through RF Device Modeling

Ju-Wan Lee, Sung-Man Cho, Gwang-Doo Jo*, Young-Kwang Kim*, II-Hun Son*, and Jong-Ho Lee
School ofEECS, Kyungpook National University, 1370 Sankyuk-Dong, Buk-Gu, Daegu 702-701, Korea
* SYS. LSI, Samsung electronics co., LTD 446-711 Ki-heung, Korea
Phone: +82-53-950-6561, E-mail: jongho@ee.knu.ac.kr
1. Introduction
Parameter extraction of nano-scale MOSFETs through RF
device modeling is very important in RF circuit design. To
achieve better accuracy of the RF IC design, it is strongly required
to extract the accurate substrate resistance (R
sub
) . Reported R
sub
extraction method [I] based on simple shorted source-drain (S-D)
configuration (Fig 4. (a shows the variation of R
sub
with external
lumped resistances (Tables I a). Therefore it is needed to extract
simultaneously R
sub
and other resistances such as R
g
, R
d
and R
dg
shown in Fig 2. So we propose a new RF parameter extraction
method with a new model (Fig 3). The method enables to extract
the Rg , R
d
and R
dg
as well as more accurate R
sub
. By using the
characteristic of our shorted SeD configuration (Rsg=R
dg,
Rs=R
d
,
Rgs=R
gd)
[I], proposed circuits can be simplified. Another merit of
our model is that RF parameters can be extracted at Vd" I V
regardless of Vs=V
o.
In an MOSFETs, channel charges are
depleted at VG=Vs=Vo=l V (Fig 3. (a and exist at VG=l V,
VS=VD=O V (Fig 3. (b), here, Rgd=Rgs represents a distributed
channel resistance). By using this bias condition, we can extract
RF parameter values closer to those at a saturation condition.
In this work, we propose a new approach to extract more
accurate RF parameters for scaled planar channel (PC) MOS
devices. Finally, our approach is verified by comparing between
modeled and simulated Y-parameters up to 20 GHz.
2. Device Structure and Equivalent Circuits
Fig. 1 shows a half structure of PC MOSFET with ring type
substrate contact used in simulation. The highly doped silicon is
used as external lumped resistances: R
g
and Rd. The gate length
(LJ and width (J) are 60 nm and 240 nm, respectively. The
p-type body and substrate doping concentrations are 5x 10
17
em"
and I x 10
18
cm-3, respectively. The n-type LDD and HDD
concentration are 7xlO
l 9
em" and 1.4xl(f em", respectively.
The channel is additionally doped for JIth=0.43V.
Fig. 3 (a) and (b) show P.I and P.2 model of MOSFETs for RF
device modeling, respectively.
Re(Y;.)= ill[(2C
gdo
+C
gb
) 2 R
g
+2C
gd0
2
Rdg +2C,d0
2
s, +C
g/
R
sub]
(I)
Re(Y;2) = Re(Y;I)= til [-2C
gdO
(2C
gdO
+C'b)R,
-2Cgd0
2
s; -2CgdO(2Cgdo -c;v, +2CgbCjdRsub] (2)
Re(Y
n)
= lli[4C
gd0
2
R
g
+2C
gd0
2
Rdg +2(C
gdO
+C
jd
) 2 s, +4C
jd
2
R
SNb
] (3)
Re(Y; I ) = ill [2(C
gso
+C
gs
)2(2R
g
+ R
sg
+ R
s)
+ 2C
g/
Rgsl (4)
Im(Y;.)= = = 2m(C
gso
+C
gs)
(5)
Re(Y;2) = Re(Y;.)= - Re(Y;I)- 2t2Cj:s(CgSO +Cgs)R
s
(6)
Re(Y
22
) = +2C
gso
+2CgJRs
+4CjS2Rsllb] (7)
Im(Y
n
)=2t(C
gso
+C
gs
+CjJ (8)
Equations (1)-(3) and (4)-(8) are the Y-parameter formulas
derived from P.I and P.2 models, respectively.
Fig. 4 (a) is circuit reported by us. (b), (c) and (d) are the
modified circuits excluding R
dg,
R
g
and R
d
from P.I model,
respectively. These circuits are used for identifying the validity of
proposed circuits.
3. RF parameters extraction.
We performed extensively 3-D simulations up to 20 GHz with
various structures including different external lumped resistances
and extracted RF parameters using various circuits. The extracted
values listed in Tables 1were frequency independent.
In Table 1, a shows that the R
sub
has a dependency on
external R
g
and Rd=R
s
Especially the effect of Rd=R
s
is significant.
Q shows that the R
g
' is independent of external Rd=R
s
and
includes modified R
dg.
a shows that the R
dg'
is independent of
external Rd=R
s
and includes modified R
g
Gl shows that the R
d
'
includes external drain resistance by linearly adding it. o shows
that the R
g
' includes external gate resistance by linearly adding it.
Q) shows that the R
dg'
includes modified Rg. 0 shows that R
g
' ,
R
dg
' and R
sub
are much sensitive to Rd=R
s
a shows that the R
sub
is independent of various external resistances. R
d
' in M.2, M.3 and
R
s
in P.2 are similar, which means that Rs,d is bias independent.
Fig. 5 shows the flow chart of proposed extraction method.
Firstly, capacitances are extracted using imaginary terms of Y-
parameter. Secondly, R, and R
subs
are extracted using (4)-(8).
Thirdly, R
d
, R
dg
and R
subd
are extracted using extracted Rg from
conventional method [2] and (I )-(3). R
subs
and R
subd
represent the
extracted Rsubs at Vs=Vo=O V and Vs=Vo=1 V, respectively [I].
Finally, R
gd
is extracted using extracted Rg and Rdg in third step
and (4)-(8).
Fig. 6 shows the result of Z-parameter analysis using shorted
source-body structure. Using the conventional method, we can
extract Rgsimilar with known lumped gate resistance, R
s
and R
d
-
In Fig. 7, s; R
dg
and R
sub
are plotted versus R
d
using (1)-(3).
Physically reasonable region means both R
g
and Rdg are positive.
In that region, R
sub
is nearly constant. Using R
g
(-48 Q) in Fig. 6,
we can extract accurately R
d
, R
dg
and R
sub
in that region.
In Table 2, we compared the drain resistance extracted from
conventional and proposed methods by changing parameters
related with SIDresistance. In our proposed model, Rdgand R
d
are
distinguished because R
dg
is dependent on VGbut R
d
is not (in Fig
2). The R
dg
is physically dependent on LDD concentration. Our
method explains well the R
dg
behavior with the LDD variation.
Total R
d
includes known lumped resistance (72 Q) and distributed
resistance over the HDD region. Therefore the R
d
is -95 n
independent of LDD variation as extracted by our method.
Fig. 8 shows the extracted resistances from P.2 model through
proposed extraction method in Fig. 5. In Figs. 9 and 10, the
modeled Y is compared with simulated Y to check the validity of
proposed method. Excellent agreement between them was
achieved.
4. Conclusion
We have proposed a new method to extract RF parameters of
planar channel MOSFETs through RF device modeling, and also
verified the model up to 20 GHz. We think the proposed method
and models can be applied consistently to extract resistances.
Acknowledgement
This work was supported by Samsung Electronics in 2007 and
University IT Research Center Project under the supervision of
UTA in 2007.
20
50
40
30
20 =-
:j
' 0 3
0
,,-
!!J
-10
-20
30
20
5 ,0 15
Frequency (GHz)
6 Symbol : Simulahon
Solid Une: Mode4
W=240 om L,=60 nm
Planar
-,
Method
Con Proposed
R.!
R.!g+R.!
Ref (R"xt=72, 280 145+95
LDD=7x10
19
) =240
LowLDD 456.7 289+98
(3x10
19
) =387
High LDD 219 91+94
(1.4x10
2O
) =185
R"xt=O 209 144.5+21.5
=166
I I I I '::f)!II I i I K>-O-o-c>o<K>-O-<X>oO

Table. 2. The comparison of extracted drain
resistance between conventional and proposed
method by changing parameters related with
SIDresistance. (unit: n, ern")
5 10 20
Frequency (GHz)
5 10 15
Frequency (GHz)
Fig. 8. The extracted resistances from P.2 model
through proposed extraction method in Fig. 5.
Fig. 9. Comparison of modeled and simulated
V-parameters in off-state. For all V-parameters
show excellent agreement over given frequency
range.
Fig. 10. Comparison of modeled and simulated
V-parameters in on-state. For all V-parameters
show excellent agreement over given frequency
range.
1460
, 440
1455
:D
t
,450 2
1445
Resistance
Extraction
R, -Re(Z"I-Re(Z.. 1
R.= 289 n
Re(Z,,)
Re(Z.. ) /
Re(Z,,) /
R+R =568 n
.. /
Is
Extemallumped resistance
.1nI<1J.n No _ Only Only
R,andR.
lumped utwnaIR. extemaIR. (R.-72
P.,.",.te _.-. (R..11J (R -J Ro4Dj
C_ 75523 7.5523 7.4318 7.43256
C.p
C.
0.34779 0.34802 0.351 0.351043

10.6649 10.6648 10.668 10,668
0
/11.1 R.....
1531.4 '640 '5<9 '656
R 75.9 (j 76 (, 115 Ii: 115.5
M.2
Ri 242 (. 9T.? 97.06
R...
1<58 1458.7 14582 1<56
Ri
21.7 (. 9S
2' 93.5

111.3
R.;
161.4 (3 '61.6 2<2.711 245.7
R...
1<59 1<59 1<60 1<56
R;
.... 2919 -6<,
-2634
111_4
R.;
1578 6367 1608 6278
R...
1469.8
'506
1470 ,SO<
P.2 R.
26< '02 2. 97
R... 240' 2407 2412 2412
3.0k
2.5k
2.0k
15k
N
",10k
a::
500.
Table. I. The extracted parameters using the
circuits introduced in FigA from the various
simulation structures including different
extemallumped resistances . (unit: n, IO
17F).
Fig. 5. The flow chart of proposed parameter
extraction method.
-500.0
00 0.5 1.0 1.5 2.0
1/lV
a
-V",) (V')
Fig. 6. Extraction of R" R, and R from the real
part of Z-parameters using conventional model.
Fig. 7. The extracted resistances from P.I
model through proposed extraction method in
Fig. 5.
(b)
C..,
R'
c....
c,.
(a)
G."
R,'
Sou'C'e
Fig. I. 3-dimensional schematic view of a half of
planar channel MOSFET structure.
References
[lJ J. Jung et al., fEEE TED, 54, p. 2269, 2007.
(2)A.Pascht et al., fEEE TM7T. 50, p.I927-1934
[3J SILVACO International, ATLAS User's
Manual, Ver. 5.II.3.C.
Fig. 2. The schematic cross-sectional view
showing R, ,Rd and Rdg
(a) (b)
Fig. 3. Proposed small signal equivalent circuits
of the MOSFETs for RF modeling.
(a) Off-state circuit (P.I model) biased at
VG=VD=V.=I . (b) On-state circuit (P.2 model)
biased at VG=I, Vo=V.=O.
FIg. '+. vn-s\<;JeClrCUIIS wmcn are nom
proposed circuit (P.I). (a) M.I model,
(b) M.2 model, (c) M.3 model, (d) M.4 model.