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SEE 2253: ELECTRONIC CIRCUITS

Chapter 2: Field-Effect Transistors

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2.0 FET Organization Chart

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2.1 Introduction
FETs are much like BJTs. Similarities:
Amplifiers Switching devices Impedance matching circuits

Differences:
FETs are voltage controlled devices whereas BJTs are current controlled devices. FETs also have a higher input impedance, but BJTs have higher gains. FETs are less sensitive to temperature variations and because of there construction they are more easily integrated on ICs. FETs are also generally more static sensitive than BJTs.
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2.2 FET Types


JFET Junction Field-Effect Transistor. JFET MOSFET Metal-Oxide Semiconductor FieldEffect Transistor.
D-MOSFET Depletion Type MOSFET. E-MOSFET Enhancement Type MOSFET

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2.3 JFET Construction


There are two types of JFETs.
n-channel p-channel

The n-channel is more widely used.

There are three terminals.


Drain (D) and source (S) are connected to the n-channel. Gate (G) is connected to the p-type material.
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2.4 Basic Operation of a JFET


JFET operation can be compared to a water spigot.
The source of water pressure is the accumulation of electrons at the negative pole of the drain-source voltage. The drain of water is the electron deficiency (or holes) at the positive pole of the applied voltage. The control of flow of water is the gate voltage that controls the width of the n-channel and, therefore, the flow of charges from source to drain.
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2.5 JFET Operating Characteristics


There are three basic operating conditions for a JFET: VGS = 0, VDS increasing to some positive value. VGS < 0, VDS at some positive value. Voltage-controlled resistor.

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JFET Operating Characteristics VGS = 0, VDS increasing to some positive value


Three things happen when VGS = 0 and VDS is increased from 0 to a more positive voltage: The depletion region between p-gate and n-channel increases as electrons from n-channel combine with holes from p-gate. Increasing the depletion region, decreases the size of the n-channel which increases the resistance of the n-channel. Even though the n-channel resistance is increasing, the current (ID) from source to drain through the n-channel is increasing. This is because VDS is increasing.

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JFET Operating Characteristics VGS = 0, VDS increasing to some positive value: Pinch Off
If VGS = 0 and VDS is further increased to a more positive voltage, then the depletion zone gets so large that it pinches off the n-channel. This suggests that the current in the n-channel (ID) would drop to 0A, but it does just the oppositeas VDS increases, so does ID.
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JFET Operating Characteristics VGS = 0, VDS increasing to some positive value: Saturation
At the pinch-off point: Any further increase in VGS does not produce any increase in ID. VGS at pinch-off is denoted as Vp. ID is at saturation or maximum. It is referred to as IDSS. The ohmic value of the channel is maximum.

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JFET Operating Characteristics VGS < 0, VDS at some positive value

As VGS becomes more negative, the depletion region increases.

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JFET Operating Characteristics VGS < 0, VDS at some positive value: ID < IDSS
As VGS becomes more negative: The JFET experiences pinch-off at a lower voltage (VP). ID decreases (ID < IDSS) even though VDS is increased. Eventually ID reaches 0A. VGS at this point is called VP or VGS(off). Also note that at high levels of VDS the JFET reaches a breakdown situation. ID increases uncontrollably if VDS > VDS(max).

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JFET Operating Characteristics Voltage-Controlled Resistor


The region to the left of the pinch-off point is called the ohmic region. region. The JFET can be used as a variable resistor, where VGS controls the drain-source resistance (rd). As VGS becomes more negative, the resistance (rd) increases.

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2.6 p-Channel JFETS


The p-channel JFET behaves the same as the nchannel JFET, except the polarities and currents are reversed.

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p-Channel JFET Characteristics

As VGS increases more positively The depletion zone increases ID decreases (ID < IDSS) Eventually ID = 0A

Also note that at high levels of VDS the JFET reaches a breakdown situationID increases uncontrollably if VDS > VDSmax.
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JFET Symbol

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JFET Transfer Characteristics


The transfer characteristic of input-to-output is not as straightforward in a JFET as it is in a BJT. In a BJT, indicates the relationship between IB (input) and IC (output). In a JFET, the relationship of VGS (input) and ID (output) is a little more complicated:

V ID = IDSS 1 GS VP

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JFET Transfer Curve


This graph shows the value of ID for a given value of VGS.

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Plotting the JFET Transfer Curve


Using IDSS and VP (VGS(off)) values found in a specification sheet, the transfer curve can be plotted according to these three steps:
Step 1

V I D = IDSS 1 GS VP
ID = IDSS
Step 2

Solving for VGS = 0V

V ID = IDSS 1 GS VP Solving for VGS = Vp (VGS(off)) ID = 0A


Step 3

Solving for VGS

V I D = IDSS 1 GS VP = 0V to Vp

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JFET Specifications Sheet


Maximum Ratings

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JFET Specifications Sheet


Electrical Characteristics

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JFET Case Construction and Terminal Identification

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Testing JFETs
Curve Tracer A curve tracer displays the ID versus VDS graph for various levels of VGS. Specialized FET Testers These testers show IDSS for the JFET under test.

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MOSFETs
MOSFETs have characteristics similar to JFETs and additional characteristics that make then very useful. There are two types of MOSFETs: Depletion-Type Depletion Enhancement-Type Enhancement-

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Gate Fixed Biased

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Self Biased

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Transfer Curve And Load Line

VGS = 600ID

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Analysis By Mathematical Representation


V ID = IDSS 1 GS VP
For self biased: VGS = -IDRS
2
2

V VGS = IDSSRS 1 GS VP 2VGS VGS 2 = IDSSRS 1 + 2 VP VP


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= IDSSRS +

I R 2IDSSRS 2 VGS DSS 2 S VGS VP VP

2I R IDSSRS 2 VGS + 1 DSS S VGS + IDSSRS = 0 2 12 3 V VP 4 244 C 123 1 4 P 3


A B

VGS

B B 2 4 AC = 2A

Actual value for VGS is between 0 VP

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JFET AC Parameter
V g m = g mo 1 GS Vp = g mo ID IDSS

g mo =

2IDSS VP

i.e transconductance when VGS = 0V

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Common-source AC Equivalent Circuit

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Resistor rd can be found from Drain-Source Characteristic graph


ID [mA] IDSS VGS = 0V

-1V VDS ID -2V -3V

rd =

VDS ID

VGSQ

VDS [V]

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Common-Source With Gate Fixed Bias

rin = Zi = R G ZO = rd RD RD AV = v ds = g m (rd RL ) g mRD vs

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Common-Source With Self Bias

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Common-Drain JFET Amplifier

rin = Zi = R1 R2 ZO = rd RS AVS = 1 gm

g m (rd RS RL ) vL = v S 1 + g m (rd RS RL )

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Common-Gate JFET Amplifier

rin = Zi = RS ZO RD AVS =

1 gm

vL = g m (RD RL ) vS

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Depletion-Type MOSFET Construction


The drain (D) and source (S) connect to the to n-doped regions. These n-doped regions are connected via an n-channel. This n-channel is connected to the gate (G) via a thin insulating layer of SiO2. The n-doped material lies on a p-doped substrate that may have an additional terminal connection called substrate (SS).
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Depletion-Type MOSFET Symbols

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Basic MOSFET Operation


A depletion-type MOSFET can operate in two modes: Depletion mode Enhancement mode

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Depletion-Type MOSFET in Depletion Mode


Depletion Mode The characteristics are similar to a JFET. When VGS = 0V, ID = IDSS When VGS < 0V, ID < IDSS The formula used to plot the transfer curve still 2 applies: V
ID = IDSS 1 GS VP

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Depletion-Type MOSFET in Enhancement Mode


Enhancement Mode VGS > 0V ID increases above IDSS The formula used to plot the transfer curve still applies:
V ID = IDSS 1 GS VP
2

Note that VGS is now a positive polarity


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p-Channel Depletion-Type MOSFET

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Specification Sheet
Maximum Ratings

more more
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Specification Sheet
Electrical Characteristics

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Enhancement-Type MOSFET Construction


The drain (D) and source (S) connect to the to n-doped regions. These n-doped regions are connected via an n-channel The gate (G) connects to the pdoped substrate via a thin insulating layer of SiO2 There is no channel The n-doped material lies on a pdoped substrate that may have an additional terminal connection called the substrate (SS)
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Enhancement-Type MOSFET Symbols

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Basic Operation of the Enhancement-Type MOSFET


The enhancement-type MOSFET only operates in the enhancement mode. VGS is always positive As VGS increases, ID increases As VGS is kept constant and VDS is increased, then ID saturates (IDSS) and the saturation level, VDSsat is reached

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Enhancement-Type MOSFET Transfer Curve


To determine ID given VGS: 2

ID = k (VGS VT )

Where: VT = threshold voltage or voltage at which the MOSFET turns on. k = constant found in the specification sheet. k can also be determined by using values at a specific point and the formula: VDS(sat) can be calculated by:

k=

ID(ON)

VDS( sat ) = VGS VT


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(VGS(ON) VT )2

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p-Channel Enhancement-Type MOSFETs


The p-channel enhancement-type MOSFET is similar to the n-channel, except that the voltage polarities and current directions are reversed.

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Specification Sheet
Maximum Ratings

more more
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Specification Sheet
Electrical Characteristics

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Handling MOSFETs
MOSFETs are very static sensitive. Because of the very thin SiO2 layer between the external terminals and the layers of the device, any small electrical discharge can create an unwanted conduction. Protection Always transport in a static sensitive bag Always wear a static strap when handling MOSFETS Apply voltage limiting devices between the gate and source, such as back-to-back Zeners to limit any transient voltage.
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Summary Table

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D-MOSFET AC Equivalent Circuit

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E-MOSFET AC Equivalent Circuit

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Common-Source E-MOSFET With Drain Feedback Bias

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Common-Source E-MOSFET With Drain Feedback Bias AC Equivalent Circuit

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Common-Source E-MOSFET With Drain Feedback Bias AC Analysis


Galangan masukan:
Zi =
Zi

RF + rd RD 1+ g m (rd RD )
RF >> rd RD ,rd 10 RD

RF 1 + g mRD

Galangan keluaran:

Zo = RF rd R D
Zo RD
RF >> rd RD ,rd 10 RD

Gandaan voltan:

Av = g m (RF rd RD )
Av g mRD
RF >> rd RD ,rd 10 RD

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Common-Source E-MOSFET With Voltage Divider Bias

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Common-Source E-MOSFET With Voltage Divider Bias AC Equivalent Circuit

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Common-Source E-MOSFET With Voltage Divider Bias AC Analysis


Galangan masukan:

Z i= R

R2

Galangan keluaran:

Z o = rd R D

Zo RD

rd 10 RD

Gandaan voltan:

Av = g

Av g m RD

(r d R D )
rd 10 RD
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Summary

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SEE 2253: ELECTRONIC CIRCUITS

Amplifier Frequency Response

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Common-Source Amplifier
+VDD RD
Cgd CC1 Cds Cgs Cwo

CC2

+ RL V o -

Rsig RG ES

Cwi

RS

CS

Zi

Zo
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Common-Source Amplifier AC Equivalent Circuit At Low Frequency

CC1

G gmVgs RG

CC2 + RD

Rsig

ES

S RS CS

RL

Vo -

Zi

RTH

Zo

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Common-Source Amplifier AC Analysis At Low Frequency


Low cutoff frequency due to coupling capacitors CC1 and CC2: 1 fL1 = 2 (Rsig + Zi )CC1
fL 2 = 1 2 (RL + Zo )CC2

Input and output impedances:


Z i = RG

and

Zo = RD
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Low cutoff frequency due to bypass capacitor CS:

fLS

1 2 RTH CS

RTH

R (1 + g m rds ) 1+ S r +R R ds D L

RS

with rd

RTH

RS

1 gm

without rd (rd = )

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Common-Source Amplifier AC Equivalent Circuit At High Frequency


G Rsig RG ES S RTHi Ci RTHo Co
Cwi Cgs Cgd

gmVgs

RD

RL

Cds

Cwo

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Common-Source Amplifier AC Analysis At High Frequency


Miller Capacitances:

CMi = Cgd (1 AV )

, CMo = Cgd

Av 1 AV

AV is a mid-band voltage gain


Where Ci = Cwi + Cgs + CMi Co = Cwo + Cds + CMo

, ,

RTHi = Rsig RG
RTHo = RD RL
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Common-Source Amplifier AC Analysis At High Frequency

Higher cutoff frequencies:

fHi

1 2 RTHi Ci
1 2 RTHo Co

fHo

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Exercise:
Given IDSS = 8mA, VGS(OFF) = VP = 4V and rd = , determine:(i) VGSQ and IDQ by graphical method. (ii) Draw a mid-band AC equivalent circuit. (iii) Mid-band voltage gain, AVS = vO/vS in dB. (iv) Mid-band current gain, Ais = iL/iS in dB.
-5V

RD 6.8k R1 180k iS RS' 60 C1 5 F C2 10 F + vO iL

RL 1k

vS

R2 4.7k RS 1.8k

CS 5 F

+3V

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Exercise:
Given k = 0.5 mA/V2, VGS(Th) = VTh = 2V and rd = , determine:(i) VGSQ and IDQ by graphical method. (ii) Draw a mid-band AC equivalent circuit. (iii) Impedances, Zi and ZO. (iv) Mid-band voltage gain, AV = vO/vi in dB.
+18V

RD 2.2k R1 4.7M C1 5 F C2 10 F + vO RL 1k

vi

R2 2.2M RS 500

CS 5 F

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Exercise:

ID(on) = 6 mA VGS(on) = 8 V VGS(Th) = VT = 3 V rd = 50 k,

(a) Determine IDQ and VGSQ by graphical method. (b) Draw a mid-band AC equivalent circuit. (c) Determine Zi and Zo. (d) Determine the mid-band voltage gain, AV = vO/vi in dB.
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