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2.1 Introduction
FETs are much like BJTs. Similarities:
Amplifiers Switching devices Impedance matching circuits
Differences:
FETs are voltage controlled devices whereas BJTs are current controlled devices. FETs also have a higher input impedance, but BJTs have higher gains. FETs are less sensitive to temperature variations and because of there construction they are more easily integrated on ICs. FETs are also generally more static sensitive than BJTs.
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JFET Operating Characteristics VGS = 0, VDS increasing to some positive value: Pinch Off
If VGS = 0 and VDS is further increased to a more positive voltage, then the depletion zone gets so large that it pinches off the n-channel. This suggests that the current in the n-channel (ID) would drop to 0A, but it does just the oppositeas VDS increases, so does ID.
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JFET Operating Characteristics VGS = 0, VDS increasing to some positive value: Saturation
At the pinch-off point: Any further increase in VGS does not produce any increase in ID. VGS at pinch-off is denoted as Vp. ID is at saturation or maximum. It is referred to as IDSS. The ohmic value of the channel is maximum.
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JFET Operating Characteristics VGS < 0, VDS at some positive value: ID < IDSS
As VGS becomes more negative: The JFET experiences pinch-off at a lower voltage (VP). ID decreases (ID < IDSS) even though VDS is increased. Eventually ID reaches 0A. VGS at this point is called VP or VGS(off). Also note that at high levels of VDS the JFET reaches a breakdown situation. ID increases uncontrollably if VDS > VDS(max).
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As VGS increases more positively The depletion zone increases ID decreases (ID < IDSS) Eventually ID = 0A
Also note that at high levels of VDS the JFET reaches a breakdown situationID increases uncontrollably if VDS > VDSmax.
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JFET Symbol
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V ID = IDSS 1 GS VP
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V I D = IDSS 1 GS VP
ID = IDSS
Step 2
V I D = IDSS 1 GS VP = 0V to Vp
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more more
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Testing JFETs
Curve Tracer A curve tracer displays the ID versus VDS graph for various levels of VGS. Specialized FET Testers These testers show IDSS for the JFET under test.
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MOSFETs
MOSFETs have characteristics similar to JFETs and additional characteristics that make then very useful. There are two types of MOSFETs: Depletion-Type Depletion Enhancement-Type Enhancement-
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Self Biased
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VGS = 600ID
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= IDSSRS +
VGS
B B 2 4 AC = 2A
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JFET AC Parameter
V g m = g mo 1 GS Vp = g mo ID IDSS
g mo =
2IDSS VP
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rd =
VDS ID
VGSQ
VDS [V]
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rin = Zi = R1 R2 ZO = rd RS AVS = 1 gm
g m (rd RS RL ) vL = v S 1 + g m (rd RS RL )
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rin = Zi = RS ZO RD AVS =
1 gm
vL = g m (RD RL ) vS
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Specification Sheet
Maximum Ratings
more more
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Specification Sheet
Electrical Characteristics
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ID = k (VGS VT )
Where: VT = threshold voltage or voltage at which the MOSFET turns on. k = constant found in the specification sheet. k can also be determined by using values at a specific point and the formula: VDS(sat) can be calculated by:
k=
ID(ON)
(VGS(ON) VT )2
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Specification Sheet
Maximum Ratings
more more
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Specification Sheet
Electrical Characteristics
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Handling MOSFETs
MOSFETs are very static sensitive. Because of the very thin SiO2 layer between the external terminals and the layers of the device, any small electrical discharge can create an unwanted conduction. Protection Always transport in a static sensitive bag Always wear a static strap when handling MOSFETS Apply voltage limiting devices between the gate and source, such as back-to-back Zeners to limit any transient voltage.
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Summary Table
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RF + rd RD 1+ g m (rd RD )
RF >> rd RD ,rd 10 RD
RF 1 + g mRD
Galangan keluaran:
Zo = RF rd R D
Zo RD
RF >> rd RD ,rd 10 RD
Gandaan voltan:
Av = g m (RF rd RD )
Av g mRD
RF >> rd RD ,rd 10 RD
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Z i= R
R2
Galangan keluaran:
Z o = rd R D
Zo RD
rd 10 RD
Gandaan voltan:
Av = g
Av g m RD
(r d R D )
rd 10 RD
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Summary
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Common-Source Amplifier
+VDD RD
Cgd CC1 Cds Cgs Cwo
CC2
+ RL V o -
Rsig RG ES
Cwi
RS
CS
Zi
Zo
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CC1
G gmVgs RG
CC2 + RD
Rsig
ES
S RS CS
RL
Vo -
Zi
RTH
Zo
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and
Zo = RD
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fLS
1 2 RTH CS
RTH
R (1 + g m rds ) 1+ S r +R R ds D L
RS
with rd
RTH
RS
1 gm
without rd (rd = )
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gmVgs
RD
RL
Cds
Cwo
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CMi = Cgd (1 AV )
, CMo = Cgd
Av 1 AV
, ,
RTHi = Rsig RG
RTHo = RD RL
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fHi
1 2 RTHi Ci
1 2 RTHo Co
fHo
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Exercise:
Given IDSS = 8mA, VGS(OFF) = VP = 4V and rd = , determine:(i) VGSQ and IDQ by graphical method. (ii) Draw a mid-band AC equivalent circuit. (iii) Mid-band voltage gain, AVS = vO/vS in dB. (iv) Mid-band current gain, Ais = iL/iS in dB.
-5V
RL 1k
vS
R2 4.7k RS 1.8k
CS 5 F
+3V
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Exercise:
Given k = 0.5 mA/V2, VGS(Th) = VTh = 2V and rd = , determine:(i) VGSQ and IDQ by graphical method. (ii) Draw a mid-band AC equivalent circuit. (iii) Impedances, Zi and ZO. (iv) Mid-band voltage gain, AV = vO/vi in dB.
+18V
RD 2.2k R1 4.7M C1 5 F C2 10 F + vO RL 1k
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R2 2.2M RS 500
CS 5 F
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Exercise:
(a) Determine IDQ and VGSQ by graphical method. (b) Draw a mid-band AC equivalent circuit. (c) Determine Zi and Zo. (d) Determine the mid-band voltage gain, AV = vO/vi in dB.
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