AH202

30 2200 MHz

1W High Linearity Amplifier

Product Features
17 dB Gain @ 900 MHz +30 dBm P1dB +47 dBm Output IP3 Single Positive Supply Internally Matched Lead-free/RoHS-compliant 6x6mm QFN SMT package

Product Description
The AH202 is a 1-Watt driver amplifier that offers excellent dynamic range in a low-cost, lead-free/RoHScompliant 6x6 mm 28-pin QFN surface-mount package. This device provides its optimum P1dB and OIP3 performance when biased at + 11 V; It can also be biased as low as +9 V for lower power applications. The backside metalization provides excellent thermal dissipation while allowing visible evidence of solder reflow across the bottom of the package on a SMT board. Superior thermal design allows the product an MTTF of over 100 years at a mounting temperature of +85 C. All devices are 100% RF & DC tested. The product is targeted for use as a driver amplifier for wireless infrastructure or CATV applications where high linearity and medium power is required.

Functional Diagram
28 1 2 RF IN 3 4 5 6 N/C 7 8 9 10 11 12 13 14 27 26 25 24 23 22 21 20 19 RF OUT 18 17 16 15

Applications
Mobile Infrastructure CATV / DBS Optimal for VHF / UHF broadband applications Defense / Homeland Security

Function Input No Connect Output/Bias No Connect or Ground Ground

Pin No. 3 7 19 All other pins Backside Paddle

Specifications (1)
Parameters
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure IS-95 Channel Power (3)
@ -45dBc ACPR

Typical Performance (4)

Units
MHz MHz dB dB dB dBm dBm dB dBm mA V

Min
30 14

Typ
800 17 20 18 +30 +47 2.5 +24 330 +11

Max
2200

Parameters
Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Noise Figure IS-95 Channel Power
@ -45dBc ACPR @ -45dBc ACLR

Units
MHz dB dB dB dBm dBm dB
(3)

Typical
1900 15 17 10 +29.7 +46 3.8 +23 2140 15 8 13 +29.4 +45.5 4.8 +20.5

+29 +45

900 17 20 18 +30 +47 2.8 +24 -

dBm
(5)

WCDMA Channel Power 390 Supply Bias

dBm

Operating Current Range Supply Voltage

+11 V @ 330 mA

1. Test conditions unless otherwise noted: 25C, Vdd = 11 V in a 50- unmatched fixture. 2. 3OIP measured with two tones at an output power of +10 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability, 885 kHz offset, 30 kHz bandwidth, Channel BW = 1.23 MHz.

4. Data reflects performance of a typical AH202 in an application circuit including associated circuit board and passive component losses. 5. 3GPP W-CDMA, Test Model 1, +32 DPCH, Pk/Avg Ratio = 8.5 dB at a 0.01% probability, 5 MHz offset, Integrated Channel BW = 3.84 MHz.

Absolute Maximum Rating

Parameter
Storage Temperature DC Voltage RF Input Power (continuous) Thermal Resistance, Rth Maximum Junction Temperature

Ordering Information
Part No.
AH202-F AH202-PCB900 AH202-PCB1900 AH202-PCB2140

Rating
-55 to +125 C +13 V +16 dBm 18 C/W +160 C

Description
1W High Linearity Amplifier
(lead-free/RoHS-compliant 6x6mm QFN package)

900 MHz Evaluation Board 1900 MHz Evaluation Board 2140 MHz Evaluation Board
Specifications and information are subject to change without notice

Operation of this device above any of these parameters may cause permanent damage.

Standard tape / reel size = 500 pieces on a 7 reel

TriQuint Semiconductor, Inc

Phone +1-503-615-9000

FAX: +1-503-615-8900

e-mail: info-sales@tqs.com

Web site: www.TriQuint.com

Page 1 of 7 August 2009

AH202

1W High Linearity Amplifier

Typical Device Data

S-parameters (VDS = +11V, IDS = 330mA, unmatched device in a 50 system). Measurements are shown for an unmatched packaged device with the data being de-embedded to the device leads.
Gain
20 19 18 17

Return Losses
0 -5 -10

S11 S22

S21 (dB)

16

(dB)

15 14 13 12 11 10 0 0.5 1 1.5 Frequency (GHz) 2 2.5

-15 -20 -25 -30 0 0.5 1 1.5 Frequency (GHz) 2 2.5

S-Parameters (VDS = +11.0V, IDS = 330mA, T = +25 C, unmatched device in a 50

Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) -17.78 -18.60 -17.34 -14.70 -11.92 -10.29 -9.20 -8.23 -7.74 -7.43 -7.73 -8.76 -10.40 -10.57 -6.72 -3.60 -1.91 S11 (ang) -137.86 -153.83 -150.80 -149.17 -159.61 -171.08 174.71 160.52 145.06 127.89 108.79 84.28 43.69 -24.74 -90.87 -136.82 -167.99 S21 (dB) 18.26 18.06 18.03 17.87 17.43 16.93 16.36 15.90 15.43 15.04 14.82 14.72 14.59 14.42 13.29 10.89 7.61 S21 (ang) 169.32 166.20 156.86 135.75 115.76 96.20 77.49 58.22 40.52 23.04 4.23 -15.48 -38.77 -65.43 -97.06 -128.44 -154.46 S12 (dB) -21.43 -21.34 -21.46 -21.84 -22.34 -22.96 -23.72 -24.54 -25.32 -26.07 -26.69 -26.94 -26.60 -25.80 -25.02 -24.82 -25.13

system)
S12 (ang) 1.41 -4.54 -12.16 -25.03 -37.49 -48.84 -61.29 -73.36 -85.56 -99.09 -115.15 -132.95 -155.57 176.52 143.13 111.82 87.68 S22 (dB) -15.33 -15.51 -16.27 -18.57 -21.38 -26.07 -21.37 -16.16 -12.76 -10.27 -8.39 -7.17 -6.37 -6.14 -6.69 -7.11 -6.73 S22 (ang) -170.64 177.37 161.24 135.96 93.89 25.81 -47.34 -78.06 -98.55 -114.42 -129.46 -144.14 -158.61 -172.06 176.96 173.14 174.58

Application Circuit PC Board Layout

Circuit Board Material: .014 Getek ( r=4.2), four layer, 1 oz copper. Microstrip line details: width = .029, spacing = .036, total thickness = .062
Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 2 of 7 August 2009

AH202

1W High Linearity Amplifier

Reference Design: 50-800 MHz

The AH202 is suitable for applications between 50 800 MHz without any requirements for input or output matching. Only bypass and blocking capacitors and an RF bias choke are needed for operation. A user can simply request an AH202-PCB900 evaluation Board and replace components C1, C2, C3, C6, L1, and L2 to the values shown below to evaluate the device.
Frequency S21 Gain S11 Input Return Loss S22 Output Return Loss Output P1 dB Output IP3
(+10 dBm / tone, 10 MHz spacing)

MHz 50 200 400 600 800 dB 18.1 17.9 17.6 17.1 16.6 dB -12.6 -17.6 -15.5 -12.9 -10.7 dB -14.8 -17.4 -20.2 -25.9 -21.0 dBm 29.9 30.0 30.1 30.1 30.0 dBm dB 41.5 47.9 47.1 46.1 45.8

Supply Bias

+11 V @ 330 mA
CAP ID=C5 C=1e5 pF

+ 11V

CAP ID=C4 (0805) C=1000 pF

PORT P=1 Z=50 Ohm

CAP ID=C1 C=1000 pF

RES ID=L2 R=0 Ohm

IND ID=L1 L=470 nH

PORT P=2 Z=50 Ohm

SUBCKT ID=S1 NET="AH202_F"

CAP ID=C2 C=1000 pF

Measured S - Parameters
20 -5

16

-15

14

-20

12

-25

10 0.04 0.24 0.44 Frequency (GHz) 0.64 0.8

-30

DB(|S(1,1)|) (R) AH202 50_800MHz

DB(|S(2,1)|) (L) AH202 50_800MHz

DB(|S(2,2)|) (R) AH202 50_800MHz

Notes: R=0 (at designator L2) is used as a place holder for a different application circuit. It can be removed from the circuit without any effect to the performance. The microstrip line is weakly co-planar. Ground planes around it are not necessary for operation of the AH202. Adequate heat sinking is required for the device. Further mounting instructions are shown in the AH202 datasheet. The RF choke should be a wirewound ceramic type to insure sufficient current carrying capacity. Coilcrafts 1008 CS series is recommended (part #1008CS-471X_B_).
Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 3 of 7 August 2009

Magnitude S11, S22 (dB)

18

-10

Magnitude S21 (dB)

AH202

1W High Linearity Amplifier

Application Circuit: 900 MHz (AH202-PCB900)

Typical RF Performance at 25 C
Frequency S21 - Gain S11 S22 Output P1dB Output IP3 IS-95A Ch. Power
@ -45 dBc ACPR
+ 11V
CAP ID=C5 (1206) C=100000 pF

900 MHz 17 dB - 20 dB - 18 dB + 30 dBm + 47 dBm + 24 dBm 2.8 dB +11 V 330 mA

CAP ID=C4 (0805) C=1000 pF

PORT P=1 Z=50 Ohm

CAP ID=C1 C=100 pF

IND ID=L2 L=3.3 nH

SUBCKT ID=S1 NET="AH202_F"

CAP ID=C3 C=100 pF IND ID=L1 (1008) L=33 nH

Noise Figure Supply Voltage Supply Current

CAP ID=C6 C=2.7 pF

CAP ID=C2 C=100 pF

PORT P=2 Z=50 Ohm

Notes: 1.

2. 3. 4.

The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcrafts 1008 CS series (part # 1008CS-330X_B) is recommended. C6 is located at silk screen marker C on the WJ evaluation board. S-Parameters
Vd = +11.0V, Temp = +25C

20 19 18 17 16 15 14 13 12 11 10 700

0 -5
Noise Figure (dB)
S11 & S22 (dB)

Noise Figure vs. Frequency

5 4 3 2 1 0 700

Vd = 11.0V, Temp = 25C

S21

S21 (dB)

-10 -15
S22 S11

-20 -25 1100

800 900 1000 Frequency (MHz)

800 900 1000 Frequency (MHz)

1100

OIP3 vs. Pout

Vd = +11.0V, Temp = +25C

ACPR vs. Channel Power

900 MHz, IS-95 Ch. Fwd. 885KHz offset, 30 KHz Meas. BW

55 50 45 40 35 5 7 9 11 13 Pout (dBm) 15 17

-40 -45
ACPR (dBc)

OIP3 (dBm)

-50 -55 -60 -65 -70 -75 15 17 19 21 23 Output Channel Power (dBm) 25

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 4 of 7 August 2009

AH202

1W High Linearity Amplifier

Application Circuit: 1900 MHz (AH202-PCB1900)

Typical RF Performance at 25 C
Frequency S21 - Gain S11 S22 Output P1dB Output IP3 IS-95A Ch. Power
@ -45 dBc ACPR
+ 11V
CAP ID=C5 (1206) C=1e5 pF

1900 MHz 15 dB - 17 dB - 10 dB + 29.7 dBm + 46 dBm + 23 dBm 3.8 dB +11 V 330 mA

CAP ID=C4 (0805) C=1000 pF

PORT P=1 Z=50 Ohm

SUBCKT ID=S1 NET="AH202_F"

CAP ID=C3 C=56 pF IND ID=L1 (1008) L=22 nH

CAP ID=C2 C=56 pF

Noise Figure Supply Voltage Supply Current

CAP ID=L2 C=2.4 pF

TLIN ID=TL1 Z0=50 Ohm EL=31 Deg F0=1900 MHz

CAP ID=C7 C=1.0 pF

PORT P=2 Z=50 Ohm

Notes: 1.

2. 3.

The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcrafts 1008 CS series (part # 1008CS-220X_B) is recommended. C8 is located at silk screen marker 7 on the WJ evaluation board.

S-Parameters
Vd = +11.0V, Temp = +25C

Noise Figure
Vd = +11.0 V, Temp = +25C

16 15 14 13 12 11 10 9 8 7 6 1700

S21

6
Noise Figure (dB)
S11 & S22 (dB)

-5 -10
S22

5 4 3 2 1 0 1700

S21 (dB)

-15 -20 -25 2200

S11

1800

1900

2000

2100

Frequency (MHz)

1800 1900 Frequency (MHz)

2000

OIP3 vs. Pout

ACPR vs. Channel Power

1900 MHz., IS-95 Ch. Fwd, 885 KHz offset, 30 KHz Meas. BW

55 50

Vd = +11.0 V, Temp = +25C

-40 -45
ACPR (dBc)

OIP3 (dBm)

-50 -55 -60 -65 -70

45 40 35 5 7 9 11 Pout (dBm) 13 15 17

-75 14 16 18 20 22 Output Channel Power (dBm) 24

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 5 of 7 August 2009

AH202
Frequency
S21 - Gain S11 S22 Output P1dB Output IP3
W-CDMA Ch. Power
@ -45 dBc ACLR

1W High Linearity Amplifier

Application Circuit: 2140 MHz (AH202-PCB2140)

Typical RF Performance at 25 C
2140 MHz 15 dB - 8 dB - 13 dB + 29.4 dBm + 45.5 dBm + 20.5 dBm 4.8 dB +11 V 330 mA
+ 11V
CAP ID=C5 (1206) C=1e5 pF

CAP ID=C4 (0805) C=1000 pF

PORT P=1 Z=50 Ohm

CAP ID=L2 C=2.2 pF

SUBCKT ID=S1 NET="AH202_F"

CAP ID=C3 C=56 pF IND ID=L1 (1008) L=22 nH

CAP ID=C2 C=56 pF

Noise Figure Supply Voltage Supply Current

TLIN ID=TL1 Z0=50 Ohm EL=28 Deg F0=2140 MHz

CAP ID=C7 C=1.0 pF

PORT P=2 Z=50 Ohm

Notes: 1. 2.

3. 4.

The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcrafts 1008 CS series (part # 1008CS-220X_B) is recommended. C7 is located at silk screen marker 6 on the WJ evaluation board.

S-Parameters 16 14
S21 (dB)
Vd = +11.0V, Temp = +25C
S21

Noise Figure 0
Noise Figure (dB) S11 & S22 (dB)

6 5 4 3 2 1 0 2000

Vd = + 11V, Temp = 25C

-5
S11

12 10 8 6 2000

-10
S22

-15 -20 -25 2300

2100 2200 Frequency (MHz)

2100 2200 Frequency (MHz)

2300

OIP3 vs. Pout 55 50 45 40 35 5 7 9 11 Pout (dBm) 13 15 17

Vd = +11.0 V, Temp = +25C

ACLR vs. Channel Power

f = 2140MHz, 3GPP W-CDMA, Test Model 1, +32 DPCH, 5 MHz offset

-40 -45 -50 -55 -60 15 16 17 18 19 20 21 Output Channel Power (dBm) 22

OIP3 (dBm)

ACLR (dBc)

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 6 of 7 August 2009

AH202

1W High Linearity Amplifier

Mechanical Information
This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.

Outline Drawing

Product Marking
The component will be lasermarked with a AH202F product label with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the Application Notes section.

ESD / MSL Information

ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class III Passes between 500 and 1000V Charged Device Model (CDM) JEDEC Standard JESD22-C101

Mounting Configuration / Land Pattern

MSL Rating: Level 2 at +260 C convection reflows Standard: JEDEC Standard J-STD-020

Functional Pin Layout

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 FUNCTION GND or N/C GND or N/C RF Input GND or N/C GND or N/C GND or N/C No Connect GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C Pin 15 16 17 18 19 20 21 22 23 24 25 26 27 28 FUNCTION GND or N/C GND or N/C GND or N/C GND or N/C RF Output GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C

Backside paddle is RF and DC ground. Pin 7 is required to be not connected or grounded for the AH202 to be functional.

Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 7 of 7 August 2009