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DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
4N29
4N30
4N31
4N32
4N33
FEATURES
High sensitivity to low input drive current Meets or exceeds all JEDEC Registered Specifications VDE 0884 approval available as a test option -add option .300. (e.g., 4N29.300)
SCHEMATIC
ANODE 1
6 BASE
APPLICATIONS
Low power logic circuits Telecommunications equipment Portable electronics Solid state relays Interfacing coupling systems of different potentials and impedances.
CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER
(TA = 25C Unless otherwise specified.) Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD BVCEO BVCBO BVECO PD IC Value -55 to +150 -55 to +100 260 for 10 sec 250 3.3 80 3 3.0 150 2.0 30 30 5 150 2.0 150 Units C C C mW mW/C mA V A mW mW/C V V V mW mW/C mA
Forward Current - Peak (300 s, 2% Duty Cycle) LED Power Dissipation @ TA = 25C Derate above 25C DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Detector Power Dissipation @ TA = 25C Derate above 25C Continuous Collector Current
4/25/00
200038B
4N30
4N31
4N32
4N33
TRANSFER CHARACTERISTICS
DC Characteristic *Collector Output Current(1,2) (4N32, 4N33) (4N29, 4N30) (IF = 10 mA, VCE = 10 V, IB = 0) IC (CTR) (4N31) *Saturation Voltage(2) (4N29, 4N30, 4N32, 4N33) (4N31) (IF = 8.0 mA, IC = 2.0 mA) VCE(sat) Test Conditions Symbol Min 50 (500) 10 (100) 5 (50) 1.0 1.2 V mA (%) Typ Max Units
TRANSFER CHARACTERISTICS
AC Characteristic Turn-on Time(3) (4N32, 4N33) (4N29, 4N30, 4N31) Bandwidth(4,5) Turn-off Time(3) Test Conditions (IF = 200 mA, IC = 50 mA, VCC = 10 V) (Fig.7) Symbol ton toff BW 30 Min Typ Max 5.0 100 40 KHz s Units
ISOLATION CHARACTERISTICS
Characteristic Input-Output Isolation Voltage(6) (4N29, 4N30, 4N31, 4N32, 4N33) *(4N32) *(4N33) Isolation Resistance(6) Isolation Capacitance(6) (VI-O = (II-O Test Conditions 1 A, Vrms, t = 1 min.) VDC VDC (VI-O = 500 VDC) , f = 1 MHz) RISO CISO VISO Symbol Min 5300 2500 1500 1011 0.8 pf Typ Max Units Vac(rms) V
4/25/00
200038B
4N30
4N31
4N32
4N33
NORMALIZED TO: CTR @ IF = 10 mA TA = 25C VCE = 10 V 0.1 -80 -60 -40 -20 0 20 40 60 80 100 120
16
14
12
IF = 10 mA
10 IF = 5 mA
100
10
IF = 2 mA
0.1
IF = 1 mA
0 0 1 2 3 4 5 6 7 8 9 10
0.01
20
40
60
80
100
10
RL = 10
100
RL = 1 k
RL = 100 10 RL = 10
4/25/00
200038B
Test Circuit
Waveforms
VCC = 10 V I C = 50 mA INPUT RL I F = 200 mA INPUT PULSE WIDTH <1 ms ton 10% 90% tr toff tf
INPUT PULSE
OUTPUT
OUTPUT PULSE
Notes * Indicates JEDEC registered data. 1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current with VCE @ 10 V. 2. Pulse test: pulse width = 300s, duty cycle 2.0% . 3. For test circuit setup and waveforms, refer to figure 7.. 4. IF adjusted to IC = 2.0 mA and IC = 0.7 mA rms. 5. The frequency at which IC is 3dB down from the 1 KHz value. 6. For this test, LED pins 1 and 2 are common, and phototransistor pins 4,5 and 6 are common.
4/25/00
200038B
4N30
4N31
4N32
4N33
PIN 1 ID.
SEATING PLANE
0.200 (5.08) 0.165 (4.18) 0.020 (0.51) MIN 0.016 (0.40) 0.008 (0.20) 0.022 (0.56) 0.016 (0.41) 0.300 (7.62) TYP 0.020 (0.51) MIN 0.100 (2.54) TYP
0 to 15
0.070 (1.78)
0.060 (1.52)
0.415 (10.54)
SEATING PLANE
0.295 (7.49)
Call QT Optoelectronics for more information or the phone number of your nearest distributor.
United States 800-533-6786 France 33 [0] 1.45.18.78.78 Germany 49 [0] 89/96.30.51 United Kingdom 44 [0] 1296 394499 Asia/Pacific 603-7248193
www.qtopto.com
4/25/00
200038B
4N30
4N31
4N32
4N33
Description
Surface Mount Lead Bend Surface Mount; Tape and reel 0.4 Lead Spacing VDE 0884 VDE 0884, 0.4 Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape & Reel
0.1 MAX
10.30 0.20
1.6 0.1
Call QT Optoelectronics for more information or the phone number of your nearest distributor.
United States 800-533-6786 France 33 [0] 1.45.18.78.78 Germany 49 [0] 89/96.30.51 United Kingdom 44 [0] 1296 394499 Asia/Pacific 603-7248793
www.qtopto.com
4/25/00
200038B