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Common source (inverting) amplifiers Source follower (common drain) Common gate stage Cascode stage*
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Large signal transfer function Large signal swing limitations Small signal Gain Input resistance Output resistance Frequency response Others Noise Power dissipation
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AKA Inverters Inverting Amplifiers Configurations Resistive load Diode connected load Current source load Triode load Source degeneration
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VDD
M1 S
VT
Vin
If Vin <VT, M1 is in cutoff region iD = 0, Vout=VDD If Vin >VT, M1 is in either triode or saturation region
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VDD
VDD
M1 S
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M1 S
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VDD
Cutoff Vout1
M1 S
Vin1 VDD 1 W Vout1 = VDD nCox ' (Vin1 VT ) 2 RD 2 L Vout1 = Vin1 VT When Vin >Vin1, M1 is in triode region
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M1 S
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VDD
Cutoff Vout1
M1 S
Vin1 VDD Input swing range: VT<Vin<Vin1 for saturation Output swing range: Vout1<Vout<VDD for sat.
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G vin S + vgs -
vout D RD S
gmvgs
gmbsvbs
gds
vbs=0 vgs=vin
M1 S
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VDD RD
M1 S
vout
g m vin = g D + g ds
Low frequency gain
vout gm = vin g D + g ds
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VDD RD
rin =
Input resistance
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VDD RD
gmvgs
gmbsvbs
vgs=0, vbs=0
M1 S
rout g out
Output resistance
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g D = 1 / RD
M1 S
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VDD G2 S2 M2 D2 iD Vin G1
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When the gate and the drain of a MOSFET (N or P) are connected together (diode-connected), it is always in saturation region.
D1 M1 S1
Vout
Saturation criteria: vDS>vGS-VT When vD=vG, the above criteria is always satisfied.
VDD G2 S2 M2 D2 iD Vin G1
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D1 M1 S1
Vout
Vin vSG2
iD
vout=VDD-vSG2
VDD G2 S2 M2 D2 iD vin G1
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VDD VDD-|VTP2|
D1 M1 S1
Vout
M1 triode
VT If Vin <VT, M1 is in cutoff region iD = 0, M2 is in cutoff region Vout=VDD-|VTP2| If Vin >VT, M1 is on, iD is not zero, M2 turns on in sat.
Vin
VDD G2 S2 M2 D2 iD D1 M1 S1
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VDD VDD-|VTP2|
Vout
VT Criteria for Saturation of M1: VDS1>VGS1-VT, Vout>Vin- VT area above line Vout= Vin- VT
G1
VDD G2 S2 M2 D2 iD D1 M1 S1
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Vout
G1
VDD G2 S2 M2 D2 iD D1 M1 S1
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Vout
G1
VDD G2 S2 M2 D2 iD D1 M1 S1
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G1
VDD G2 S2 M2 D2 iD D1 M1 S1
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G1
Label X- and Y-axis Label the operational regions of each device Label the important transition points between different operational regions on both X- and Y-axis Write the equation for each portion of the curve
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v1
VDD G v1 vgs S
D gmvgs gds gm
v1 gds
gm
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vbs1=vbs2=0
D1 M1 S1
vout vout
Inverting Amplifier with PMOS DiodeConnected Load Rin, Rout, and Gain
G VDD G2 S2 M2 D2 iD vin G1
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D gds1 gm2+gds2 S
D1 M1 S1
Vout rin =
rout
1 1 = g ds1 + g m 2 + g ds 2 g m 2
D
gmVgs
gmbs gm go
Vgs=0-vx
Vbs=0-vx
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vout vout
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Inverting Amplifier with NMOS DiodeConnected Load Rin, Rout, and Gain
G + vgs S gm1vgs1 gmbs1vbs1 gds1 gm2+gmbs2+gds2 S D
Inverting Amplifier with Current Source Load - Large Signal Transfer Function
Vout M1 sat M1 off Vout>Vin-VTN1 M2 triode M2 sat
VDD G2 VB iD vin G1
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S2 M2 D2 D1 M1 S1
VDD VB+|VTP2|
Vout
M1 triode
Vin
VDD G2 VB iD vin G1
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S2 M2 D2 D1 M1 S1
Consider the small signal characteristics of M2: G2=0 D2 + Vgs=0 Vout S2 Equivalent to gds2 gm2vgs2 gds2 S2
D gds1 gds2 S
S2 M2 D2 D1 M1 S1
Vout
vout
1 = g m1vin g ds1 + g ds 2
Inverting Amplifier with Current Source Load Rin, Rout, and Gain
G VDD G2 VB iD vin G1
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D gds1 gds2 S
S2 M2 D2 D1 M1 S1
Vout
VDD G2 VB iD vin G1
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S2 M2 D2 D1 M1 S1
If M2 operates in the saturation region, M2 is a current source. Calculate gds2 in saturation region. If VB is very low, (Large VSG2), M2 Vout is mostly likely work in the triode region. Calculate gds2 in triode region.
HW #3
Due on 9/11 More exercise if desired (in Razavi book) 3.1, 3.2, 3.3, 3.4 3.15 (a) (c) (d) 3.16 (a) (b) (c) 3.21 (a) (b) (c)
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