Professional Documents
Culture Documents
Contents:
Reading assignment:
Key questions
p n
+-
p - + n
φmn
p - + n
φB -xpo 0 xno x
p - + n
• metal/p-QNR contact?
• p-QNR?
• SCR?
• n-QNR?
• metal/n-QNR contact?
V
+-
p - + n
φ
V>0
V
V=0 φB-V
φB x
• in equilibrium: φB
• in forward bias: φB − V < φB
• in reverse bias: φB − V > φB (since V < 0)
E(V)
ρ
qNd
-xp(V)
xn(V) x
-qNa
Fundamentally,
Useful consequence:
v
u
u
u
u V
xp (V ) = x po u
t1−
φB
v
u
u
u
u V
xd (V ) = x do u
t 1−
φB
v
u
u
u
u V
|E|(V ) = |Eo| 1 − u
t
φB
2. Depletion capacitance
p n
- - - + +
- -- + + ++ +
- -- +
- ++ +
- - -- +
+ + +
- - - - + + +
qNd
-∆Qj
+Qj
-xp(V)
xn(V) x
∆Qj -Qj
V
-qNa V+∆V
∆ρ
+∆Qj
xn(V)
-xp(V) x
−∆Qj
εs
tins
+∆Q
+Q
-Q
-∆Q
∆ρ
+∆Q
x
-∆Q
s
C=
tins
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 6-12
In analogy, in pn junction:
V ∆V
+-
p n
- - - + +
- -- + + ++ +
- -- +
- ++ +
- - -- +
+ + +
- - - - + + +
qNd
-∆Qj
+Qj
-xp(V)
xn(V) x
∆Qj -Qj
V
-qNa V+∆V
∆ρ
+∆Qj
xn(V)
-xp(V) x
−∆Qj
v
u
u
s qs NaNd u
u
Cjo
Cj (V ) = = u
t = s
xd(V ) 2(φB − V )(Na + Nd) 1 − φVB
Key dependencies of Cj :
• Cj depends on bias (because xd depends on bias)
Cj
Cjo
0 φB V
1
Cj2
- 2
εsqN
d
φB V
0
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 6-15
Appears in Fortini, A., A. Hairie, and M. Gomina. "Analysis and capacitive measurement
of the built-in-field parameter in highly doped emitters." IEEE Trans on Electron Devices 29,
no. 10 (1982): 1604 (© 1982 IEEE). Used with permission.
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 6-16
p n
- - - + +
- -- + + ++ +
- -- +
- ++ +
- - -- +
+ + +
- - - - + + +
qNd
-∆Qj
+Qj
-xp(V)
xn(V) x
∆Qj -Qj
V
-qNa V+∆V
∆ρ
+∆Qj
xn(V)
-xp(V) x
−∆Qj
v v
u u
u u
2qsNaNd(φB − V )
u
u u
u V
Qj (V ) = u
t =Q 1−
jo u
t
Na + Nd φB
Qj
φB
0 V
Cj
Qjo
dQj
Cj =
dV
but not:
Qj
Cj =
V
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 6-18
I log |I|
0.43 q
kT
IS
0
0 V 0 V
IS
linear scale semilogarithmic scale
Key conclusions
φB −→ φB − V