RF3932

60W GaN WIDEBAND POWER AMPLIFIER

Package: Flanged Ceramic

Features

Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=14dB at 2GHz 48 V Operation Typical Performance Output Power 75W at P3dB Drain Efficiency 68% at P3dB -40C to 85C Operating Temperature EAR99 Export Control Commercial Wireless Infrastructure Cellular and WiMAX Infrastructure Civilian and Military Radar General Purpose Broadband Amplifiers Public Mobile Radios Industrial, Scientific, and Medical

RF IN VG Pin 1 ( CUT ) GND BASE

Functional Block Diagram

RF OUT VD Pin 2

Product Description
The RF3932 is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3932 is an unmatched GaN transistor, packaged in a hermetic flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished by incorporating simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.

Applications

Ordering Information
RF3932 RF3932PCBA-410 60W GaN Wideband Power Amplifier Fully Assembled Evaluation Board Optimized for 2.14GHz; 48V

Optimum Technology Matching Applied

GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT

GaN HEMT
RF MEMS LDMOS

RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc.

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RF3932
Absolute Maximum Ratings Parameter
Drain Voltage (VD) Gate Voltage (VG) Gate Current (IG) Operational Voltage Ruggedness (VSWR) Storage Temperature Range Operating Temperature Range (TC) Operating Junction Temperature (TJ) Human Body Model MTTF (TJ < 200C, 95% Confidence Limits)* Thermal Resistances, RTH (junction to case) measured at TC=85C, DC bias only

Rating
150 -8 to +2 39 50 10:1 -55 to +125 -40 to +85 200 Class 1A 3E+06 2.6

Unit
V V mA V C C C Hours C/W

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.

*MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT (random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table below. Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC) / RTH J-C and TC = TCASE

Parameter
Recommended Operating Conditions
Drain Voltage (VDSQ) Gate Voltage (VGSQ) Drain Bias Current Frequency of Operation

Min.

Specification Typ. Max.

Unit

Condition

28 -4.5 DC 5 23 16.5 -3.7 220

48 -2.5 3500

V V mA MHz pF pF pF VG =-8V, VD =O V VG=-8V, VD =OV VG =-8V, VD =OV VG =-8 V, Vd =O V VG =-8 V, VD =48V VD =48 V, ID =10 mA VG =O V, ID =1.5 A [1], [2] VD =48V, ID =220 mA CW, POUT = 47.8 dBm, f=2140 MHz CW, POUT =47.8 dBm, f=2140 MHz CW, POUT =47.8 dBm, f=2140 MHz

Capacitance
CRSS CISS COSS

DC Functional Test
IG (off) - Gate Leakage ID (off) - Drain Leakage VGS (th) - Threshold Voltage VDS(on) - Drain Voltage at high current -4.2 0.25 -3.4 11 55 13 60 -12 2 2.5 mA mA V V V dB % dB

RF Functional Test
VGSQ Gain Drain Efficiency Input Return Loss

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RF3932
Parameter
RF Typical Performance
Small Signal Gain Small Signal Gain Output Power at P3dB Output Power at P3dB Drain Efficiency at P3dB Drain Efficiency at P3dB 21 14 48.80 48.70 68 66 dB dB dBm dBm % %

Min.

Specification Typ. Max.

Unit
[1], [2] CW, f=900MHz CW, f=2140MHz CW, f=900MHz CW, f=2140MHz CW, f=900MHz CW, f=2140MHz

Condition

[1] Test Conditions: CW Operation, VDSQ =48V, IDQ =220mA, T=25 C [2] Performance in a standard tuned test fixture.

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RF3932
Typical Performance in standard 2.14GHz fixed tuned test fixture (T=25C, unless noted)
Gain vs. Output Power (f = 2140MHz)
(Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 220mA) 16

Eciency vs. Output Power (f = 2140MHz)

(Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 220mA) 70

15

60

E 85C E 25C E -25C

Drain Eciency (%) %) Gain 85C Gain 25C Gain -25C 32 34 36 38 40 42 44 46 48

14 Gain (dB)

50

13

40

12

30

11

20

10 Output Power (dBm)

10 32 34 36 38 40 42 44 46 48 Output Power (dBm)

Input Return Loss vs. Output Power (f = 2140MHz)

(Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 220mA) -6 -8 -10 IRL, Input Return Loss (dB) nput rn -12 -14
Gain (dB)

Small Signal Performance vs. Frequency, Pout = 30dBm

(Vd = 48V, Idq = 220mA) 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 Gain IRL Fixed tuned test circuit -13 -14 -15 -16 -18 -19 -20 -21 -22 -23 -24 -25 -26 -27 2120 2130 2140 Frequency (MHz) 2150 2160 2170
Input Return Loss (dB)

-17

-16 -18 -20 -22 -24 -26 -28 -30 32 34 36 38 40 Frequency (MHz) 42 44 46 48 IRL 85C IRL 25C IRL -25C

2110

Gain/IRL vs. Frequency Pout = 47 8dBm vs Frequency, 47.8dBm

(CW, Vd = 48V, Idq = 220mA) 17 16 15 14 13 12 ) Gain (dB) 11 10 9 8 7 6 5 4 2110 2120 2130 2140 Frequency (MHz) 2150 2160 Gain IRL Fixed tuned test circuit -5 -6 -7 -8 -9 -10 11 -11 -12 -13 -14 -15 -16 -17 18 -18 2170 Input Return Loss (dB) nput

Drain Eciency vs Frequency, Pout = 47.8dBm vs. Frequency 47 8dBm

(CW, Vd = 48V, Idq = 220mA) 66 Fixed tuned test circuit 64

Drain Eciency (%) ain

62

60

58

56 2110 2120 2130 2140 Frequency (MHz) 2150 2160 2170

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DS110317

RF3932
Typical Performance in standard 2.14GHz fixed tuned test fixture (T=25C, unless noted)
Gain/Eciency vs. Pout, f = 2140MHz
(CW, Vd = 48V, Idq = 220mA) 16 15 14 13
Gain (dB)

Gain/Eciency vs. Pout, f = 2140MHz

(Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 220mA)
80 70 60 50 40 30
Drain Eciency (%) ain

16 15 14 Gain (dB) 13 12 11 10 9 8 30 35 40 Pout, Output Power (dBm) 45 50 Gain Drain E

80 70 60 50 40 30 20 10 0 Drain Eciency (%)

100

12 11 10 9 8 30 35 40 Pout, Output Power (dBm) 45 50 Gain Drain E

20 10 0

IMD3 vs. Pout

(2-Tone 1MHz Sepera on, Vd = 48V, Idq varied, fc = 2140MHz) -15 IMD3, Intermodula on Distor on (dBc) termodula 18

Gain vs. Pout

(2-Tone 1MHz Sepera on, Vd = 48V, Idq varied, fc = 2140MHz)

-20 16 -25 110mA 165mA -30 220mA 275mA -35 330mA 12

Gain (dB)

110mA 14 165mA 220mA 275mA 330mA

-40 1 10 Pout, Output Power (W-PEP) 100

10 1 10 Pout, Output Power (W-PEP)

IMD vs. Output Power

(Vd = 48V, Idq = 220mA, f1 = 2139.5MHz, f2 = 2140.5MHz) -10 -IMD3 Intermodula on Distor on (IMD - dBc) ula -15 -20 -25 -30 -35 -40 -45 -50 -55 1 10 Pout, Output Power (W- PEP) 100 -IMD5 -IMD7 IMD3 IMD5 IMD7

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RF3932
Typical Performance in standard 900 MHz fixed tuned test fixture (T=25C, unless noted)

Small Signal Performance vs. Frequency, Pout = 30dBm

(Vd = 48V, Idq = 220mA) 23 22 21 20 Gain (dB) 19 18 17 16 15 14 880 890 900 Frequency (MHz) 910 920 Gain IRL Fixed tuned test circuit -3 -4 -5 Input Return Loss (dB) t -6 -7 -8 -9 -10 -11 -12
22 21 20 19 18 17
Gain (dB)

Gain/IRL vs. Frequency, Pout = 47.8dBm

(CW, Vd = 48V, Idq = 220mA) -10 -11 Fixed tuned test circuit -12 -13 13 -14 -15 -16 -17 -18 -19 -20 20 Gain IRL -21 -22 880 890 900 Frequency (MHz) 910 920
Input Return Loss (dB) turn

16 15 14 13 12 11 10

Drain Eciency vs. Frequency, Pout = 47.8dBm

(CW, Vd = 48V, Idq = 220mA) 73 71 69 67 Drain Eciency (%) )
Gain (dB) 26

Gain/Eciency vs. Pout, f = 900MHz

(CW, Vd = 48V, Idq = 220mA) 80 70 60 50 40 30 20 10 38 40 42 44 46 48 50 Pout, Output Power (dBm)

Fixed tuned test circuit

24 22

65 63 61 59 57 55 880 890 900 Frequency (MHz) 910 920 E

20 18 16 14 12

Gain Drain E

IMD3 vs. Pout

Gain/Eciency vs. Pout, f = 900MHz
(Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 220mA) 26 24 22 Gain (dB) 20 18 16 14 12 38 40 42 44 46 48 50 Pout, Output Power (dBm) 80 70 60 Drain Eciency (%) ciency 50 40 30 20 10

(2-Tone 1MHz Sepera on, Vd = 48V, Idq varied, fc = 900MHz) -10 IMD3, Intermodula on Distor on (dBc) ntermodula -15 -20 -25 -30 -35 -40 -45 -50 110mA 165mA 220mA 275mA 330mA 1 10 Pout, Output Power (W-PEP) 100

Gain Drain E

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DS110317

Drain Eciency (%)

RF3932
Typical Performance in standard 900 GHz fixed tuned test fixture (T=25C, unless noted)
Gain vs. Pout
(2-Tone 1MHz Separa on, Vd = 48V, Idq varied, fc = 900MHz) 24 23 22 Gain (dB) 21 20 110mA 19 18 17 1 10 Pout, Output Power (W-PEP) 100 165mA 220mA 275mA 330mA
-10 -IMD3 Intermodula on Distor on (IMD - dBc) la -15 -20 -25 -30 -35 -40 -45 -50 -55 1 10 Pout, Output Power (W- PEP) 100 -IMD5 -IMD7 IMD3 IMD5 IMD7

IMD vs. Output Power

(Vd = 48V, Idq = 220mA, f1 = 899.5MHz, f2 = 900.5MHz)

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RF3932
Package Drawing
Package Style: Flanged Ceramic

All dimensions in mm. Pin 1 2 3 Function Gate Drain Source Description Gate - VG input Drain - VD RF Output Source - Ground Base

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RF3932
Bias Instruction for RF3932 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board.
1. 2. 3. 4. 5. Connect RF cables at RFin and RFout. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. Apply -8V to Vg. Apply 48V to Vd. Increase Vg until drain current reaches 220mA or desired bias point. 6. Turn on the RF input.

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RF3932
2.14GHz Evaluation Board Schematic

2.14GHz Evaluation Board Bill of Materials

Component
C1, C2, C10, C11 C3,C14 C4,C13 C6 C7 C8 C9 C12 C5 R1

Value
33pF 0.1F 4.7F 2.2pF 0.8pF 0.8pF 2.4pF 330F 100F 10

Manufacturer
ATC Murata Murata ATC ATC ATC ATC Panasonic Panasonic Panasonic

Part Number
ATC800A330JT GRM32NR72A104KA01L GRM55ER72A475KA01L ATC800A2R2BT ATC800A0R8BT ATC800A0R8BT ATC800A2R4BT EEU-FC2A331 ECE-V1HA101UP ERJ-8GEYJ100V

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RF3932
2.14GHz Evaluation Board Layout

Device Impedances
Frequency (MHz)
2110 2140 2170

Z Source ()
2.56 - j4.27 2.45 - j3.94 2.36 - j3.6

Z Load (
4.76 + j0.7 4.77 + j1.3 4.80 + j1.9

Note: Device impedances reported are the measured evaluation board impedances chosen for a trade-off of efficiency, peak power, and linearity performance across the entire frequency bandwidth.

DS110317

7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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RF3932
900 MHz Evaluation Board Schematic

900 MHz Evaluation Board Bill of Materials

Component
C1, C2, C10, C11 C3,C14 C4,C13 C6 C7 C8 C9 C12 C5 R1

Value
68pF 0.1F 4.7F 18pF 15pF 6.8pF 2.0pF 330F 100F 10

Manufacturer
ATC Murata Murata ATC ATC ATC ATC Panasonic Panasonic Panasonic

Part Number
ATC100B680JT GRM32NR72A104KA01L GRM55ER72A475KA01L ATC800A180JT ATC800A150JT ATC100B6R8CT ATC100B2R0CT EEU-FC2A331 ECE-V1HA101UP ERJ-8GEYJ100V

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RF3932
900MHz Evaluation Board Layout

Device Impedances
Frequency (MHz)
880 900 920

Z Source ()
1.16+j1.1 1.30+j1.5 1.60+j1.6

Z Load (
12.68+j6.5 13.30+j7.2 14.00+j7.9

Note: Device impedances reported are the measured evaluation board impedances chosen for a trade-off of efficiency, peak power, and linearity performance across the entire frequency bandwidth.

DS110317

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RF3932
RF3932 Source and Load Impedances*
Z Source D G S Z Load

Frequency (MHz)
450 750 900 1300 1700 1900 2100 2300 2500

Z Source ()
2.4+j6.8 1.5+j3.4 1.2+j2.0 0.8-j0.3 0.75-j2.0 0.73-j2.8 0.7-j3.6 0.7-j4.5 0.7-j5.5

Z Load (
14+j4.1 11.5+j5.2 10.3+j5.3 7.6+j4.6 5.8+j3.1 5.2+j2.3 4.7+j1.5 4.3+j0.6 4.0-j0.2

Impedances for optimized output power, VDS=48V, IDQ=220mA *Originating from ADS model

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DS110317

RF3932
Device Handling/Environmental Conditions GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS = CGD + CGS COSS = CGD + CDS CRSS = CGD DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance trade off. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device.

DS110317

7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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