VISHAY

TSOP321..
Vishay Semiconductors

IR Receiver Modules for Remote Control Systems

Description
The TSOP321.. - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the operation with short burst transmission codes and high data rates at a supply voltage of 3 V.

16672

Features
Photo detector and preamplifier in one package Internal filter for PCM frequency Improved shielding against electrical field disturbance TTL and CMOS compatibility Output active low Supply voltage range: 2.7 V to 5.5 V High immunity against ambient light

Mechanical Data
Pinning: 1 = OUT, 2 = VS, 3 = GND

Parts Table
Part Carrier Frequency 30 kHz 33 kHz 36 kHz 36.7 kHz 38 kHz 40 kHz 56 kHz TSOP32130 TSOP32133 TSOP32136 TSOP32137 TSOP32138 TSOP32140 TSOP32156

Special Features
Enhanced data rate of 4000 bit/s Operation with short bursts possible ( 6 cycles/burst)

Document Number 82229 Rev. 2, 05-Jun-03

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TSOP321..
Vishay Semiconductors Block Diagram Application Circuit
16835

VISHAY

2 30 k Input PIN AGC Band Pass Demodulator

VS

17170

1
OUT

Circuit

Transmitter TSOPxxxx with TSALxxxx

R1 = 100 VS C1 = 4.7 F VO +VS

OUT GND

C
GND

3 Control Circuit
GND R1 + C1 recommended to suppress power supply disturbances. The output voltage should not be hold continuously at a voltage below VO = 2.0 V by the external circuit.

Absolute Maximum Ratings

Tamb = 25 C, unless otherwise specified Parameter Supply Voltage Supply Current Output Voltage Output Current Junction Temperature Storage Temperature Range Operating Temperature Range Power Consumption Soldering Temperature (Tamb 85 C) t 10 s, 1 mm from case (Pin 2) (Pin 2) (Pin 1) (Pin 1) Test condition Symbol VS IS VO IO Tj Tstg Tamb Ptot Tsd Value - 0.3 to + 6.0 3 - 0.3 to (V S + 0.3) 10 100 - 25 to + 85 - 25 to + 85 30 260 Unit V mA V mA C C C mW C

Electrical and Optical Characteristics

Tamb = 25 C, unless otherwise specified Parameter Supply Current (Pin 2) Supply Voltage Transmission Distance Ev = 0, test signal see fig.1, IR diode TSAL6200, IF = 250 mA IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 Ev = 0 Ev = 40 klx, sunlight Test condition Symbol ISD ISH VS d 2.7 35 Min 0.7 Typ. 1.2 1.3 5.5 Max 1.5 Unit mA mA V m

Output Voltage Low (Pin 1) Irradiance (30-40 kHz)

VOSL Ee min 0.2

250 0.4

mV mW/m 2

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Document Number 82229 Rev. 2, 05-Jun-03

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Parameter Irradiance (56 kHz) Test condition VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 3 Angle of half transmission distance Symbol Ee min Min Typ. 0.3

TSOP321..
Vishay Semiconductors
Max 0.5 Unit mW/m 2

Irradiance (30-40 kHz)

Ee min

0.35

0.5

mW/m 2

Irradiance (56 kHz)

Ee min

0.45

0.6

mW/m 2

Irradiance Directivity

Ee max 1/2

30 45

W/m 2 deg

Typical Characteristics (Tamb = 25 C unless otherwise specified)

Ee Optical Test Signal (IR diode TSAL6200, IF=0.4 A, N=6 pulses, f=f0, T=10 ms) Ee Optical Test Signal

tpi *) T *) tpi w 6/fo is recommended for optimal function Output Signal VO VOH VOL td1 )
1) 2)

600 ms T = 60 ms Output Signal, ( see Fig.4 )

600 ms

94 8134

14337

VO VOH VOL

3/f0 < td < 9/f0 tpi 4/f0 < tpo < tpi + 6/f0 t

tpo2 )

Ton

Toff

Figure 1. Output Function

Figure 3. Output Function

Ton ,Toff Output Pulse Width ( ms )

0.35
t po Output Pulse Width ( ms )

1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.1 1.0 l = 950 nm, optical test signal, fig.3 Toff Ton

0.30 Output Pulse 0.25 0.20 0.15 0.10 0.05 0.00 0.1 l = 950 nm, optical test signal, fig.1 Input Burst Duration

1.0

16907

10.0 100.0 1000.010000.0 Ee Irradiance ( mW/m2 )

16910

10.0 100.0 1000.010000.0 Ee Irradiance ( mW/m2 )

Figure 2. Pulse Length and Sensitivity in Dark Ambient

Figure 4. Output Pulse Diagram

Document Number 82229 Rev. 2, 05-Jun-03

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TSOP321..
Vishay Semiconductors

VISHAY

E e min Threshold Irradiance ( mW/m 2 )

1.2
E e min / E e Rel. Responsivity

2.0 f(E) = f0 1.6 1.2 0.8 0.4 0.0 0.0 0.4 0.8 1.2 1.6 2.0 E Field Strength of Disturbance ( kV/m )

1.0 0.8 0.6 0.4 0.2 0.0 0.7 f = f0"5% Df ( 3dB ) = f0/7 0.9 1.1 f/f0 Relative Frequency 1.3

16926

94 8147

Figure 5. Frequency Dependence of Responsivity

Figure 8. Sensitivity vs. Electric Field Disturbances

Ee min Threshold Irradiance ( mW/m 2 )

4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.01 Ambient, l = 950 nm
Correlation with ambient light sources: 10W/m2^1.4klx (Std.illum.A,T=2855K) 10W/m2^8.2klx (Daylight,T=5900K)

1.0 0.9
Max. Envelope Duty Cycle

0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 f = 38 kHz, Ee = 2 mW/m2

0.10

1.00

10.00

100.00
16914

16911

E Ambient DC Irradiance (W/m2)

20 40 60 80 100 120 Burst Length ( number of cycles / burst )

Figure 6. Sensitivity in Bright Ambient

Figure 9. Max. Envelope Duty Cycle vs. Burstlength

Ee min Threshold Irradiance ( mW/m 2 )

Ee min Threshold Irradiance ( mW/m 2 )

2.0 f = fo f = 10 kHz 1.0

0.6 0.5 0.4 0.3 0.2 0.1 0.0 30 15 0 15 30 45 60 75 Tamb Ambient Temperature ( C ) Sensitivity in dark ambient

1.5

f = 1 kHz

0.5 f = 100 Hz 0.0 0.1 1.0 10.0 100.0 1000.0 DVsRMS AC Voltage on DC Supply Voltage (mV)

90

16912

16918

Figure 7. Sensitivity vs. Supply Voltage Disturbances

Figure 10. Sensitivity vs. Ambient Temperature

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Document Number 82229 Rev. 2, 05-Jun-03

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TSOP321..
Vishay Semiconductors

S ( l ) rel Relative Spectral Sensitivity

1.2 1.0 0.8 0.6 0.4 0.2 0.0 750

850

950

1050

1150

16919

l Wavelength ( nm )

Figure 11. Relative Spectral Sensitivity vs. Wavelength

10

20

30

40 1.0 0.9 0.8 0.7 50 60 70 80 0.6

96 12223p2

0.4 0.2 0 0.2 0.4 0.6 drel - Relative Transmission Distance

Figure 12. Directivity

1.0
E e min Sensitivity ( mW/m 2 )
17185

0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VS Supply Voltage ( V )

Figure 13. Sensitivity vs. Supply Voltage

Document Number 82229 Rev. 2, 05-Jun-03

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TSOP321..
Vishay Semiconductors Suitable Data Format
The circuit of the TSOP321.. is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. A bandpass filter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. The data signal should fulfill the following conditions: Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz). Burst length should be 6 cycles/burst or longer. After each burst which is between 6 cycles and 70 cycles a gap time of at least 10 cycles is necessary. For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the data stream. This gap time should have at least same length as the burst. Up to 2200 short bursts per second can be received continuously. Some examples for suitable data format are: NEC Code, Toshiba Micom Format, Sharp Code, RC5 Code, RC6 Code, RCMM Code, R-2000 Code, RECS-80 Code. When a disturbance signal is applied to the TSOP321.. it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occur. Some examples for such disturbance signals which are suppressed by the TSOP321.. are: DC light (e.g. from tungsten bulb or sunlight) Continuous signal at 38 kHz or at any other frequency Signals from fluorescent lamps with electronic ballast (an example of the signal modulation is in the figure below).

VISHAY

IR Signal

IR Signal from fluorescent lamp with low modulation

0
16920

10 Time ( ms )

15

20

Figure 14. IR Signal from Fluorescent Lamp with low Modulation

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Document Number 82229 Rev. 2, 05-Jun-03

VISHAY
Package Dimensions in mm

TSOP321..
Vishay Semiconductors

13655

Document Number 82229 Rev. 2, 05-Jun-03

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TSOP321..
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.

VISHAY

2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Document Number 82229 Rev. 2, 05-Jun-03