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MICROELECTRONICS CORP.
HSD965
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD965 is suited for use as AF output amplifier and flash unit.
TO-92
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature ...................................................................................... 150 C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25C) ................................................................................ 750 mW
Maximum Voltages and Currents (Ta=25C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCEO Collector to Emitter Voltage ...................................................................................... 20 V
VEBO Emitter to Base Voltage .............................................................................................. 7 V
IC Collector Current (Continuous) ......................................................................................... 5 A
IC Collector Current (Peak PT=10mS) .................................................................................. 8 A
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
20
7
230
150
-
Typ.
0.35
150
-
Max.
0.1
0.1
1
800
50
Unit
V
V
V
uA
uA
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=10V, IE=0
VEB=7V, IC=0
IC=3A, IB=100mA
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Classification Of hFE
Rank
Range
HSD965
Q
230-380
R
340-600
S
560-800
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
10000
VCE(sat) @ IC=30IB
o
125 C
HFE
1000
25 C
o
75 C
100
100
o
75 C
o
25 C
125 C
hFE @ VCE=2V
10
10
10
100
1000
10000
10
100
10000
100
Cob
Capacitance (pF)
1000
100
10
VCE=6V
10
1
0.1
10
100
10
100
1000
Power Derating
800
10000
700
1000
PT=1ms
PT=100ms
PT=1s
100
10
600
500
400
300
200
100
0
1
1
10
HSD965
100
50
100
150
200
Ambient Temperature-Ta ( C)
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
2
Marking:
H
SD
9 6 5
B
1
Rank
Date Code
Control Code
3
Style: Pin 1.Emitter 2.Collector 3.Base
H
I
E
F
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
1
2
3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5
*2
*2
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5
*2
*2
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
HSD965