Electronics I Homework I - Due on 10.10.2011 1) (a) The intrinsic carrier concentration in silicon is to be no larger than ni = 1012 cm3.

Determine the maximum allowable temperature. (b) Repeat part (a) for ni = 109 cm3. 2) Silicon is doped with 5 x 1016 arsenic atoms/cm3. (a) Is the material n- or p-type? (b) Calculate the electron and hole concentrations at T = 300K. (c) Repeat part (b) for T = 350K. 3) A drift current density of 120 A/cm2 is established in n-type silicon with an applied electric field of 18 V/cm. If the electron and hole mobilities are n = 1250 cm2/Vs and p = 450 cm2/Vs, respectively, determine the required doping concentration. 4) The hole concentration in silicon is given by p(x) = 104 + 1015 exp(x/Lp) x0

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The value of Lp is 10m. The hole diffusion coefficient is Dp = 15 cm2/s. Determine the hole diffusion current density at (a) x = 0, (b) x = 10m, and (c) x = 30m. The zero-bias capacitance of a silicon pn junction diode is Cjo = 0.02 pF and the built-in potential is Vbi = 0.80V. The diode is reverse biased through a 47-k resistor and a voltage source. (a) For t < 0, the applied voltage is 5 V and, at t = 0, the applied voltage drops to zero volts. Estimate the time it takes for the diode voltage to change from 5 V to 1.5 V. (As an approximation, use the average diode capacitance between the two voltage levels.) (b) Repeat part (a) for an input voltage change from 0 V to 5 V and a diode voltage change from 0 V to 3.5 V. (Use the average diode capacitance between these two voltage levels.) (a) The reverse-saturation current of a pn junction diode is IS = 1011 A. Determine the diode voltage to produce currents of (i) 10 A, 100 A, 1 mA, and (ii) 5 x 1012 A. (b) Repeat part (a) for IS = 1013 A and part (a) (ii) for 1014 A. The reverse-saturation current of a silicon pn junction diode at T = 300K is IS = 1012 A. Determine the temperature range over which IS varies from 0.5 x 1012 A to 50 x 1012 A. Consider the circuit shown in figure. Determine the diode current ID and diode voltage VD for (a) V = 0.6V and (b) V = 0.7 V.

9) Use a computer simulation to generate the ideal currentvoltage characteristics of a diode from a reverse-bias voltage of 5 V to a forward-bias current of 1 mA, for an IS parameter value of (a) 1015 A and (b) 1013 A. Use the default values for all other parameters. 10) Determine the small-signal diffusion resistance rd for a diode biased at (a) ID = 26 A, (b) ID = 260 A, and (c) ID = 2.6 mA.

11) Consider the Zener diode circuit shown in Figure P1.57. The Zener breakdown voltage is VZ = 5.6V at IZ = 0.1mA, and the incremental Zener resistance is rz = 10 . (a) Determine VO with no load (RL =). (b) Find the change in the output voltage if VPS changes by 1V. (c) Find VO if VPS = 10V and RL = 2 k .

12) The cut-in voltage of the diode shown in the circuit in figure is V = 0.7V. The diode is to remain biased on for a power supply voltage in the range 5 VPS 10V. The minimum diode current is to be ID(min) = 2 mA. The maximum power dissipated in the diode is to be no more than 10 mW. Determine appropriate values of R1 and R2

. 13) Design a diode circuit to produce the load line and Q-point shown in figure. Assume diode piecewise linear parameters of V = 0.7 V and rf = 0.